DE69218611D1 - Verfahren zur herstellung eines halbleiter-beschleunigungsmessers - Google Patents

Verfahren zur herstellung eines halbleiter-beschleunigungsmessers

Info

Publication number
DE69218611D1
DE69218611D1 DE69218611T DE69218611T DE69218611D1 DE 69218611 D1 DE69218611 D1 DE 69218611D1 DE 69218611 T DE69218611 T DE 69218611T DE 69218611 T DE69218611 T DE 69218611T DE 69218611 D1 DE69218611 D1 DE 69218611D1
Authority
DE
Germany
Prior art keywords
producing
semiconductor accelerometer
accelerometer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69218611T
Other languages
English (en)
Other versions
DE69218611T2 (de
Inventor
Bruce Beitman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harris Corp
Original Assignee
Harris Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harris Corp filed Critical Harris Corp
Publication of DE69218611D1 publication Critical patent/DE69218611D1/de
Application granted granted Critical
Publication of DE69218611T2 publication Critical patent/DE69218611T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0015—Cantilevers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0104—Chemical-mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/0136—Controlling etch progression by doping limited material regions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/019—Bonding or gluing multiple substrate layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
DE69218611T 1991-06-12 1992-06-12 Verfahren zur herstellung eines halbleiter-beschleunigungsmessers Expired - Fee Related DE69218611T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US71381591A 1991-06-12 1991-06-12
PCT/US1992/005109 WO1992022820A2 (en) 1991-06-12 1992-06-12 Semiconductor accelerometer and method of its manufacture

Publications (2)

Publication Number Publication Date
DE69218611D1 true DE69218611D1 (de) 1997-04-30
DE69218611T2 DE69218611T2 (de) 1997-07-03

Family

ID=24867655

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69218611T Expired - Fee Related DE69218611T2 (de) 1991-06-12 1992-06-12 Verfahren zur herstellung eines halbleiter-beschleunigungsmessers

Country Status (5)

Country Link
US (2) US5429993A (de)
EP (1) EP0606220B1 (de)
JP (1) JP3352457B2 (de)
DE (1) DE69218611T2 (de)
WO (1) WO1992022820A2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2700065B1 (fr) * 1992-12-28 1995-02-10 Commissariat Energie Atomique Procédé de fabrication d'accéléromètres utilisant la technologie silicium sur isolant.
DE4315012B4 (de) * 1993-05-06 2007-01-11 Robert Bosch Gmbh Verfahren zur Herstellung von Sensoren und Sensor
US5616514A (en) * 1993-06-03 1997-04-01 Robert Bosch Gmbh Method of fabricating a micromechanical sensor
DE19509868A1 (de) * 1995-03-17 1996-09-19 Siemens Ag Mikromechanisches Halbleiterbauelement
US5736430A (en) * 1995-06-07 1998-04-07 Ssi Technologies, Inc. Transducer having a silicon diaphragm and method for forming same
DE19536250A1 (de) * 1995-09-28 1997-04-03 Siemens Ag Mikroelektronischer, integrierter Sensor und Verfahren zur Herstellung des Sensors
US5721162A (en) * 1995-11-03 1998-02-24 Delco Electronics Corporation All-silicon monolithic motion sensor with integrated conditioning circuit
DE69632950T2 (de) * 1996-07-31 2005-08-25 Stmicroelectronics S.R.L., Agrate Brianza Integrierte Mikrostrukturen aus Halbleitermaterial und ein Verfahren zu deren Herstellung
US6472244B1 (en) 1996-07-31 2002-10-29 Sgs-Thomson Microelectronics S.R.L. Manufacturing method and integrated microstructures of semiconductor material and integrated piezoresistive pressure sensor having a diaphragm of polycrystalline semiconductor material
US5923952A (en) * 1997-07-18 1999-07-13 Kavlico Corporation Fusion-bond electrical feed-through
EP0915513A1 (de) * 1997-10-23 1999-05-12 STMicroelectronics S.r.l. Integrierte Spule mit hohem Gütefaktor und deren Herstellungsverfahren
US5982608A (en) * 1998-01-13 1999-11-09 Stmicroelectronics, Inc. Semiconductor variable capacitor
US6129282A (en) * 1998-07-20 2000-10-10 Psc Scanning, Inc. Rugged scanning subsystem for data reading
GB9819821D0 (en) * 1998-09-12 1998-11-04 Secr Defence Improvements relating to micro-machining
DE19847455A1 (de) * 1998-10-15 2000-04-27 Bosch Gmbh Robert Verfahren zur Bearbeitung von Silizium mittels Ätzprozessen
AU2032300A (en) 1998-11-25 2000-06-19 Ball Semiconductor Inc. Miniature spherical semiconductor transducer
US6232150B1 (en) 1998-12-03 2001-05-15 The Regents Of The University Of Michigan Process for making microstructures and microstructures made thereby
KR100316774B1 (ko) * 1999-01-15 2001-12-12 이형도 마이크로 관성 센서의 제작 방법
US6324904B1 (en) 1999-08-19 2001-12-04 Ball Semiconductor, Inc. Miniature pump-through sensor modules
DE10063991B4 (de) * 2000-12-21 2005-06-02 Infineon Technologies Ag Verfahren zur Herstellung von mikromechanischen Bauelementen
US6448103B1 (en) * 2001-05-30 2002-09-10 Stmicroelectronics, Inc. Method for making an accurate miniature semiconductor resonator
SG99386A1 (en) * 2002-01-29 2003-10-27 Sensfab Pte Ltd Method of manufacturing an accelerometer
US7127949B2 (en) * 2003-07-08 2006-10-31 National University Of Singapore Contact pressure sensor and method for manufacturing the same
SG114631A1 (en) * 2003-10-10 2005-09-28 Sony Corp A mems accelerometer
US20090306924A1 (en) * 2008-06-10 2009-12-10 Datalogic Scanning, Inc. Automatic calibration system for scanner-scale or other scale system
DE102008044371B4 (de) * 2008-12-05 2016-10-27 Robert Bosch Gmbh Verfahren zur Herstellung einer Sensoranordnung
CN107892268B (zh) * 2017-11-13 2023-07-14 苏州敏芯微电子技术股份有限公司 压力传感器及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4699006A (en) * 1984-03-19 1987-10-13 The Charles Stark Draper Laboratory, Inc. Vibratory digital integrating accelerometer
US4922756A (en) * 1988-06-20 1990-05-08 Triton Technologies, Inc. Micro-machined accelerometer
GB2198611B (en) * 1986-12-13 1990-04-04 Spectrol Reliance Ltd Method of forming a sealed diaphragm on a substrate
JP2701845B2 (ja) * 1987-08-21 1998-01-21 株式会社東海理化電機製作所 シリコン薄膜の製造方法
JPH02251142A (ja) * 1989-03-24 1990-10-08 Fujikura Ltd 半導体装置の製造方法
JPH0669519A (ja) * 1992-08-18 1994-03-11 Mitsubishi Electric Corp 半導体圧力センサ

Also Published As

Publication number Publication date
WO1992022820A2 (en) 1992-12-23
US5429993A (en) 1995-07-04
JPH07501421A (ja) 1995-02-09
EP0606220B1 (de) 1997-03-26
WO1992022820A3 (en) 1994-08-18
US5656512A (en) 1997-08-12
JP3352457B2 (ja) 2002-12-03
EP0606220A1 (de) 1994-07-20
DE69218611T2 (de) 1997-07-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE RUFF, WILHELM, BEIER, DAUSTER & PARTNER, 70173 STUTTGART

8339 Ceased/non-payment of the annual fee