DE69215160D1 - Verfahren zur Herstellung eines abstimmbaren Halbleiterlasers - Google Patents
Verfahren zur Herstellung eines abstimmbaren HalbleiterlasersInfo
- Publication number
- DE69215160D1 DE69215160D1 DE69215160T DE69215160T DE69215160D1 DE 69215160 D1 DE69215160 D1 DE 69215160D1 DE 69215160 T DE69215160 T DE 69215160T DE 69215160 T DE69215160 T DE 69215160T DE 69215160 D1 DE69215160 D1 DE 69215160D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor laser
- tunable semiconductor
- tunable
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06203—Transistor-type lasers
- H01S5/06206—Controlling the frequency of the radiation, e.g. tunable twin-guide lasers [TTG]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/095—Laser devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/11—Metal-organic CVD, ruehrwein type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22476391 | 1991-08-09 | ||
JP2204092 | 1992-01-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69215160D1 true DE69215160D1 (de) | 1996-12-19 |
DE69215160T2 DE69215160T2 (de) | 1997-03-06 |
Family
ID=26359201
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69215160T Expired - Fee Related DE69215160T2 (de) | 1991-08-09 | 1992-08-07 | Verfahren zur Herstellung eines abstimmbaren Halbleiterlasers |
Country Status (4)
Country | Link |
---|---|
US (1) | US5284791A (de) |
EP (1) | EP0527615B1 (de) |
JP (1) | JP2943510B2 (de) |
DE (1) | DE69215160T2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5360763A (en) * | 1992-09-07 | 1994-11-01 | Nec Corporation | Method for fabricating an optical semiconductor device |
JPH06232099A (ja) | 1992-09-10 | 1994-08-19 | Mitsubishi Electric Corp | 半導体装置の製造方法,半導体装置の製造装置,半導体レーザの製造方法,量子細線構造の製造方法,及び結晶成長方法 |
GB2299894B (en) * | 1992-09-10 | 1997-01-22 | Mitsubishi Electric Corp | Method for producing a semiconductor laser device |
DE69407312T2 (de) * | 1993-01-07 | 1998-07-23 | Nec Corp | Integrierte optische Halbleiteranordnung und Herstellungsverfahren |
US5436193A (en) * | 1993-11-02 | 1995-07-25 | Xerox Corporation | Method of fabricating a stacked active region laser array |
JP2770722B2 (ja) * | 1993-11-11 | 1998-07-02 | 日本電気株式会社 | 波長可変半導体レーザの製造方法 |
JP3234086B2 (ja) * | 1994-01-18 | 2001-12-04 | キヤノン株式会社 | 光半導体デバイス及びその製造方法 |
KR0146714B1 (ko) * | 1994-08-08 | 1998-11-02 | 양승택 | 평면 매립형 레이저 다이오드의 제조방법 |
JP3374878B2 (ja) * | 1994-09-02 | 2003-02-10 | 三菱電機株式会社 | 半導体エッチング方法 |
US5847415A (en) * | 1995-03-31 | 1998-12-08 | Nec Corporation | Light emitting device having current blocking structure |
JPH1075009A (ja) * | 1996-08-30 | 1998-03-17 | Nec Corp | 光半導体装置とその製造方法 |
TW393785B (en) * | 1997-09-19 | 2000-06-11 | Siemens Ag | Method to produce many semiconductor-bodies |
US6122109A (en) * | 1998-04-16 | 2000-09-19 | The University Of New Mexico | Non-planar micro-optical structures |
JP3329764B2 (ja) * | 1999-05-13 | 2002-09-30 | 日本電気株式会社 | 半導体レーザー及び半導体光増幅器 |
US6459709B1 (en) * | 2001-01-31 | 2002-10-01 | Nova Crystals, Inc. | Wavelength-tunable semiconductor laser diode |
TWI236193B (en) * | 2004-02-18 | 2005-07-11 | Univ Nat Chiao Tung | Fast wavelength-tunable laser system using Fabry-Perot laser diode |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4213805A (en) * | 1973-05-28 | 1980-07-22 | Hitachi, Ltd. | Liquid phase epitaxy method of forming a filimentary laser device |
JPS5276890A (en) * | 1975-12-23 | 1977-06-28 | Agency Of Ind Science & Technol | Production of g#a#-a#a# hetero-junction semiconductor device |
JPH0646669B2 (ja) * | 1987-07-28 | 1994-06-15 | 日本電気株式会社 | 半導体レ−ザ及びその製造方法 |
KR900009229B1 (ko) * | 1988-04-28 | 1990-12-24 | 한국 과학기술원 | 선택적 에피택시법에 의한 표면 방출형 AlGaAs/GaAs 반도체 레이저 다이오드의 제조방법 |
DE58906978D1 (de) * | 1988-09-22 | 1994-03-24 | Siemens Ag | Abstimmbarer DFB-Laser. |
EP0383958B1 (de) * | 1989-02-15 | 1993-06-02 | Siemens Aktiengesellschaft | Abstimmbarer Halbleiterlaser |
US4940672A (en) * | 1989-03-17 | 1990-07-10 | Kopin Corporation | Method of making monolithic integrated III-V type laser devices and silicon devices on silicon |
US5084894A (en) * | 1989-06-20 | 1992-01-28 | Optical Measurement Technology Development Co., Ltd. | Optical semiconductor device |
US4949350A (en) * | 1989-07-17 | 1990-08-14 | Bell Communications Research, Inc. | Surface emitting semiconductor laser |
DE3934998A1 (de) * | 1989-10-20 | 1991-04-25 | Standard Elektrik Lorenz Ag | Elektrisch wellenlaengenabstimmbarer halbleiterlaser |
US5070510A (en) * | 1989-12-12 | 1991-12-03 | Sharp Kabushiki Kaisha | Semiconductor laser device |
JPH0750815B2 (ja) * | 1990-08-24 | 1995-05-31 | 日本電気株式会社 | 半導体光集積素子の製造方法 |
-
1992
- 1992-07-28 JP JP20073392A patent/JP2943510B2/ja not_active Expired - Fee Related
- 1992-08-06 US US07/926,240 patent/US5284791A/en not_active Expired - Fee Related
- 1992-08-07 EP EP92307256A patent/EP0527615B1/de not_active Expired - Lifetime
- 1992-08-07 DE DE69215160T patent/DE69215160T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0527615A1 (de) | 1993-02-17 |
EP0527615B1 (de) | 1996-11-13 |
DE69215160T2 (de) | 1997-03-06 |
JPH05251817A (ja) | 1993-09-28 |
US5284791A (en) | 1994-02-08 |
JP2943510B2 (ja) | 1999-08-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |