DE69416993D1 - Verfahren zur Herstellung einer Halbleitervorrichtung - Google Patents

Verfahren zur Herstellung einer Halbleitervorrichtung

Info

Publication number
DE69416993D1
DE69416993D1 DE69416993T DE69416993T DE69416993D1 DE 69416993 D1 DE69416993 D1 DE 69416993D1 DE 69416993 T DE69416993 T DE 69416993T DE 69416993 T DE69416993 T DE 69416993T DE 69416993 D1 DE69416993 D1 DE 69416993D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69416993T
Other languages
English (en)
Other versions
DE69416993T2 (de
Inventor
Masaru Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69416993D1 publication Critical patent/DE69416993D1/de
Publication of DE69416993T2 publication Critical patent/DE69416993T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69416993T 1993-12-10 1994-12-08 Verfahren zur Herstellung einer Halbleitervorrichtung Expired - Fee Related DE69416993T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31018893 1993-12-10
JP6301847A JPH07221174A (ja) 1993-12-10 1994-12-06 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69416993D1 true DE69416993D1 (de) 1999-04-15
DE69416993T2 DE69416993T2 (de) 1999-08-26

Family

ID=26562900

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69416993T Expired - Fee Related DE69416993T2 (de) 1993-12-10 1994-12-08 Verfahren zur Herstellung einer Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US5663094A (de)
EP (1) EP0662714B1 (de)
JP (1) JPH07221174A (de)
DE (1) DE69416993T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW318261B (de) * 1995-09-21 1997-10-21 Handotai Energy Kenkyusho Kk
JP4179483B2 (ja) 1996-02-13 2008-11-12 株式会社半導体エネルギー研究所 表示装置の作製方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5325384A (en) * 1976-08-20 1978-03-09 Sony Corp Forming method of conductive patte rn
JPS58219768A (ja) * 1982-06-14 1983-12-21 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US4694317A (en) * 1984-10-22 1987-09-15 Fuji Photo Film Co., Ltd. Solid state imaging device and process for fabricating the same
NL194140C (nl) * 1989-02-21 2001-07-03 Canon Kk Halfgeleiderinrichting met matrixbedradingssectie en foto-elektrische omzetfunctie.
DE69125210T2 (de) * 1990-05-31 1997-08-07 Canon Kk Verfahren zur Herstellung einer Halbleitervorrichtung mit einer Verdrahtungsstruktur hoher Dichte
JPH0448516A (ja) * 1990-06-14 1992-02-18 Fujitsu Ltd 透明電極の形成方法
US5242858A (en) * 1990-09-07 1993-09-07 Canon Kabushiki Kaisha Process for preparing semiconductor device by use of a flattening agent and diffusion
US5124280A (en) * 1991-01-31 1992-06-23 Sgs-Thomson Microelectronics, Inc. Local interconnect for integrated circuits
US5304775A (en) * 1991-06-06 1994-04-19 Mitsubishi Denki Kabushiki Kaisha Method of etching a wafer having high anisotropy with a plasma gas containing halogens and in inert element
JP3166221B2 (ja) * 1991-07-23 2001-05-14 日本電気株式会社 半導体装置及びその製造方法
JP3063338B2 (ja) * 1991-11-30 2000-07-12 日本電気株式会社 半導体装置およびその製造方法
JPH05243579A (ja) * 1992-02-28 1993-09-21 Canon Inc 半導体装置
EP0558055B1 (de) * 1992-02-28 2000-11-02 Canon Kabushiki Kaisha Halbleitervorrichtung mit einer ITO-Schicht
JP2814445B2 (ja) * 1992-09-16 1998-10-22 インターナショナル・ビジネス・マシーンズ・コーポレイション 選択的な金の低温化学蒸着

Also Published As

Publication number Publication date
US5663094A (en) 1997-09-02
EP0662714B1 (de) 1999-03-10
DE69416993T2 (de) 1999-08-26
JPH07221174A (ja) 1995-08-18
EP0662714A1 (de) 1995-07-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee