DE69323979T2 - Verfahren zur Herstellung einer Halbleitervorrichtung - Google Patents
Verfahren zur Herstellung einer HalbleitervorrichtungInfo
- Publication number
- DE69323979T2 DE69323979T2 DE69323979T DE69323979T DE69323979T2 DE 69323979 T2 DE69323979 T2 DE 69323979T2 DE 69323979 T DE69323979 T DE 69323979T DE 69323979 T DE69323979 T DE 69323979T DE 69323979 T2 DE69323979 T2 DE 69323979T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4347134A JP3024409B2 (ja) | 1992-12-25 | 1992-12-25 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69323979D1 DE69323979D1 (de) | 1999-04-22 |
DE69323979T2 true DE69323979T2 (de) | 1999-07-29 |
Family
ID=18388144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69323979T Expired - Fee Related DE69323979T2 (de) | 1992-12-25 | 1993-12-23 | Verfahren zur Herstellung einer Halbleitervorrichtung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5444001A (de) |
EP (1) | EP0604234B1 (de) |
JP (1) | JP3024409B2 (de) |
KR (1) | KR0136742B1 (de) |
DE (1) | DE69323979T2 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06104268A (ja) * | 1992-09-21 | 1994-04-15 | Mitsubishi Electric Corp | ゲッタリング効果を持たせた半導体基板およびその製造方法 |
JPH0786289A (ja) * | 1993-07-22 | 1995-03-31 | Toshiba Corp | 半導体シリコンウェハおよびその製造方法 |
JP4559397B2 (ja) * | 1994-09-29 | 2010-10-06 | 株式会社半導体エネルギー研究所 | 結晶性珪素膜の作製方法、及び薄膜トランジスタの作製方法 |
US5789284A (en) | 1994-09-29 | 1998-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating semiconductor thin film |
USRE43450E1 (en) | 1994-09-29 | 2012-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating semiconductor thin film |
US5789308A (en) * | 1995-06-06 | 1998-08-04 | Advanced Micro Devices, Inc. | Manufacturing method for wafer slice starting material to optimize extrinsic gettering during semiconductor fabrication |
JPH09120965A (ja) * | 1995-10-25 | 1997-05-06 | Toshiba Corp | 半導体装置の製造方法 |
US6331457B1 (en) * | 1997-01-24 | 2001-12-18 | Semiconductor Energy Laboratory., Ltd. Co. | Method for manufacturing a semiconductor thin film |
JPH1074770A (ja) * | 1996-08-01 | 1998-03-17 | Siemens Ag | ドープされたシリコン基板 |
JPH10209168A (ja) | 1997-01-24 | 1998-08-07 | Nec Corp | 半導体装置の製造方法 |
US6146980A (en) * | 1997-06-04 | 2000-11-14 | United Microelectronics Corp. | Method for manufacturing silicon substrate having gettering capability |
JP3830623B2 (ja) | 1997-07-14 | 2006-10-04 | 株式会社半導体エネルギー研究所 | 結晶性半導体膜の作製方法 |
JP3295346B2 (ja) | 1997-07-14 | 2002-06-24 | 株式会社半導体エネルギー研究所 | 結晶性珪素膜の作製方法及びそれを用いた薄膜トランジスタ |
JP3211747B2 (ja) | 1997-09-30 | 2001-09-25 | 日本電気株式会社 | 半導体装置の製造方法 |
GB2368464B (en) * | 1999-02-02 | 2002-10-16 | Nec Corp | Semiconductor device and fabrication process therefor |
JP2000294549A (ja) | 1999-02-02 | 2000-10-20 | Nec Corp | 半導体装置及びその製造方法 |
US6277194B1 (en) * | 1999-10-21 | 2001-08-21 | Applied Materials, Inc. | Method for in-situ cleaning of surfaces in a substrate processing chamber |
US6555487B1 (en) | 2000-08-31 | 2003-04-29 | Micron Technology, Inc. | Method of selective oxidation conditions for dielectric conditioning |
JP2006190896A (ja) * | 2005-01-07 | 2006-07-20 | Renesas Technology Corp | エピタキシャルシリコンウエハとその製造方法および半導体装置とその製造方法 |
JP5063867B2 (ja) * | 2005-04-21 | 2012-10-31 | 株式会社Sumco | Soi基板の製造方法 |
JP2007220825A (ja) * | 2006-02-15 | 2007-08-30 | Sumco Corp | シリコンウェーハの製造方法 |
US7737004B2 (en) * | 2006-07-03 | 2010-06-15 | Semiconductor Components Industries Llc | Multilayer gettering structure for semiconductor device and method |
DE102009051009A1 (de) | 2009-10-28 | 2011-05-05 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe aus einkristallinem Silizium |
WO2012088710A1 (zh) * | 2010-12-27 | 2012-07-05 | 上海新傲科技股份有限公司 | 采用吸杂工艺制备带有绝缘埋层的半导体衬底的方法 |
JP7047688B2 (ja) * | 2018-09-19 | 2022-04-05 | 三菱マテリアル株式会社 | 多結晶シリコンロッドの製造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4053335A (en) * | 1976-04-02 | 1977-10-11 | International Business Machines Corporation | Method of gettering using backside polycrystalline silicon |
US4144099A (en) * | 1977-10-31 | 1979-03-13 | International Business Machines Corporation | High performance silicon wafer and fabrication process |
JPS5680139A (en) * | 1979-12-05 | 1981-07-01 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
JPS5848936A (ja) * | 1981-09-10 | 1983-03-23 | Fujitsu Ltd | 半導体装置の製造方法 |
US4608096A (en) * | 1983-04-04 | 1986-08-26 | Monsanto Company | Gettering |
JPS61135128A (ja) * | 1984-12-06 | 1986-06-23 | Toshiba Corp | 半導体装置の製造方法 |
JPS61159741A (ja) * | 1984-12-31 | 1986-07-19 | Sony Corp | 半導体装置の製造方法 |
JPS61214555A (ja) * | 1985-03-20 | 1986-09-24 | Hitachi Ltd | 半導体装置 |
JPS6226826A (ja) * | 1985-07-26 | 1987-02-04 | Nec Corp | 半導体装置の製造方法 |
JPS62208638A (ja) * | 1986-03-07 | 1987-09-12 | Toshiba Corp | 半導体装置の製造方法 |
DE3910185C2 (de) * | 1988-03-30 | 1998-09-24 | Nippon Steel Corp | Siliziumplättchen mit hervorragendem Gettervermögen und Verfahren zu dessen Herstellung |
JPH0648686B2 (ja) * | 1988-03-30 | 1994-06-22 | 新日本製鐵株式会社 | ゲッタリング能力の優れたシリコンウェーハおよびその製造方法 |
US5189508A (en) * | 1988-03-30 | 1993-02-23 | Nippon Steel Corporation | Silicon wafer excelling in gettering ability and method for production thereof |
JPH01298726A (ja) * | 1988-05-27 | 1989-12-01 | Hitachi Ltd | 半導体ウエハの製造方法およびその半導体ウエハを用いた半導体装置 |
JPH03154346A (ja) * | 1989-11-13 | 1991-07-02 | Fujitsu Ltd | ゲッタリング方法 |
JPH0472735A (ja) * | 1990-07-13 | 1992-03-06 | Mitsubishi Materials Corp | 半導体ウエーハのゲッタリング方法 |
-
1992
- 1992-12-25 JP JP4347134A patent/JP3024409B2/ja not_active Expired - Lifetime
-
1993
- 1993-12-23 DE DE69323979T patent/DE69323979T2/de not_active Expired - Fee Related
- 1993-12-23 US US08/172,248 patent/US5444001A/en not_active Expired - Fee Related
- 1993-12-23 EP EP93310507A patent/EP0604234B1/de not_active Expired - Lifetime
- 1993-12-24 KR KR1019930030165A patent/KR0136742B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR0136742B1 (ko) | 1998-04-29 |
EP0604234B1 (de) | 1999-03-17 |
EP0604234A3 (de) | 1995-01-11 |
DE69323979D1 (de) | 1999-04-22 |
EP0604234A2 (de) | 1994-06-29 |
US5444001A (en) | 1995-08-22 |
JPH06196490A (ja) | 1994-07-15 |
JP3024409B2 (ja) | 2000-03-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |