DE69315811T2 - Verfahren zur Herstellung einer optoelektrischen Halbleitervorrichtung - Google Patents

Verfahren zur Herstellung einer optoelektrischen Halbleitervorrichtung

Info

Publication number
DE69315811T2
DE69315811T2 DE69315811T DE69315811T DE69315811T2 DE 69315811 T2 DE69315811 T2 DE 69315811T2 DE 69315811 T DE69315811 T DE 69315811T DE 69315811 T DE69315811 T DE 69315811T DE 69315811 T2 DE69315811 T2 DE 69315811T2
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
optoelectric semiconductor
optoelectric
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69315811T
Other languages
English (en)
Other versions
DE69315811D1 (de
Inventor
Johannes Jordanus Maria Binsma
Johannes M Van Der Heijden
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Viavi Solutions Inc
Original Assignee
Koninklijke Philips Electronics NV
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69315811D1 publication Critical patent/DE69315811D1/de
Publication of DE69315811T2 publication Critical patent/DE69315811T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices
DE69315811T 1992-12-16 1993-12-09 Verfahren zur Herstellung einer optoelektrischen Halbleitervorrichtung Expired - Fee Related DE69315811T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92203945 1992-12-16

Publications (2)

Publication Number Publication Date
DE69315811D1 DE69315811D1 (de) 1998-01-29
DE69315811T2 true DE69315811T2 (de) 1998-06-10

Family

ID=8211142

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69315811T Expired - Fee Related DE69315811T2 (de) 1992-12-16 1993-12-09 Verfahren zur Herstellung einer optoelektrischen Halbleitervorrichtung

Country Status (3)

Country Link
US (1) US5472907A (de)
JP (1) JPH06216473A (de)
DE (1) DE69315811T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5790728A (en) * 1996-06-28 1998-08-04 Motorola, Inc. Optical coupling component and method of making the same
FR2768232B1 (fr) * 1997-09-11 1999-10-15 Alsthom Cge Alcatel Procede de fabrication d'un composant optique integre comprenant un guide d'onde epais couple a un guide d'onde mince
US6680495B2 (en) 2000-08-04 2004-01-20 Amberwave Systems Corporation Silicon wafer with embedded optoelectronic material for monolithic OEIC
US20030017421A1 (en) * 2001-07-18 2003-01-23 Miri Park Holographic grating fabrication using mirror with surface curvature
GB0126642D0 (en) * 2001-11-06 2002-01-02 Denselight Semiconductors Pte Design of current blocking structure to improve semiconductor laser performance
KR100616540B1 (ko) * 2004-03-31 2006-08-29 삼성전기주식회사 2파장 반도체 레이저 소자 및 그 제조방법
JP4899755B2 (ja) * 2006-09-28 2012-03-21 住友電気工業株式会社 半導体光素子を作製する方法
TWI364118B (en) * 2007-06-29 2012-05-11 Huga Optotech Inc Semiconductor structure combination for epitaxy of semiconductor optoelectronic device and manufactur thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6077486A (ja) * 1983-10-05 1985-05-02 Matsushita Electric Ind Co Ltd 半導体レ−ザ素子の製造方法
JPS62194691A (ja) * 1986-02-21 1987-08-27 Kokusai Denshin Denwa Co Ltd <Kdd> 光導波路領域を有する半導体光集積装置の製造方法
EP0411145A4 (en) * 1989-02-02 1991-07-24 Fujitsu Limited Integrated optical semiconductor device and method of producing the same
US4922500A (en) * 1989-04-21 1990-05-01 Bell Communications Research, Inc. Cross-coupled quantum-well stripe laser array

Also Published As

Publication number Publication date
US5472907A (en) 1995-12-05
DE69315811D1 (de) 1998-01-29
JPH06216473A (ja) 1994-08-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: UNIPHASE OPTO HOLDINGS INC., SAN JOSE, CALIF., US

8328 Change in the person/name/address of the agent

Free format text: E. TERGAU UND KOLLEGEN, 90482 NUERNBERG

8327 Change in the person/name/address of the patent owner

Owner name: JDS UNIPHASE CORP., SAN JOSE, CALIF., US

8328 Change in the person/name/address of the agent

Representative=s name: KEHL & ETTMAYR, PATENTANWAELTE, 81679 MUENCHEN

8339 Ceased/non-payment of the annual fee