DE69403593T2 - Gerät und Verfahren zur Herstellung einer Halbleitervorrichtung - Google Patents

Gerät und Verfahren zur Herstellung einer Halbleitervorrichtung

Info

Publication number
DE69403593T2
DE69403593T2 DE69403593T DE69403593T DE69403593T2 DE 69403593 T2 DE69403593 T2 DE 69403593T2 DE 69403593 T DE69403593 T DE 69403593T DE 69403593 T DE69403593 T DE 69403593T DE 69403593 T2 DE69403593 T2 DE 69403593T2
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69403593T
Other languages
English (en)
Other versions
DE69403593D1 (de
Inventor
Hiroki Kawada
Kazue Takahashi
Manabu Edamura
Saburo Kanai
Naoyuki Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69403593D1 publication Critical patent/DE69403593D1/de
Publication of DE69403593T2 publication Critical patent/DE69403593T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
DE69403593T 1993-09-20 1994-08-16 Gerät und Verfahren zur Herstellung einer Halbleitervorrichtung Expired - Lifetime DE69403593T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23279393A JP3399040B2 (ja) 1993-09-20 1993-09-20 半導体製造装置及び半導体製造方法

Publications (2)

Publication Number Publication Date
DE69403593D1 DE69403593D1 (de) 1997-07-10
DE69403593T2 true DE69403593T2 (de) 1998-01-08

Family

ID=16944849

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69403593T Expired - Lifetime DE69403593T2 (de) 1993-09-20 1994-08-16 Gerät und Verfahren zur Herstellung einer Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US5536359A (de)
EP (1) EP0644574B1 (de)
JP (1) JP3399040B2 (de)
DE (1) DE69403593T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8158065B2 (en) 2008-09-30 2012-04-17 Advanced Micro Devices, Inc. In situ monitoring of metal contamination during microstructure processing

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3666820B2 (ja) * 1994-09-19 2005-06-29 株式会社大久保製作所 偏光板の貼り付け装置
US5733820A (en) * 1995-04-27 1998-03-31 Sharp Kabushiki Kaisha Dry etching method
US5985032A (en) * 1995-05-17 1999-11-16 Matsushita Electric Industrial Co., Ltd. Semiconductor manufacturing apparatus
US5707484A (en) * 1995-10-04 1998-01-13 Advaned Micro Devices, Inc. Method of accurate compositional analysis of dielectric films on semiconductors
US5742399A (en) * 1996-04-18 1998-04-21 American Air Liquide, Inc. Method for stabilizing the wavelength in a laser spectrometer system
US5818578A (en) * 1995-10-10 1998-10-06 American Air Liquide Inc. Polygonal planar multipass cell, system and apparatus including same, and method of use
US5963336A (en) * 1995-10-10 1999-10-05 American Air Liquide Inc. Chamber effluent monitoring system and semiconductor processing system comprising absorption spectroscopy measurement system, and methods of use
US5949537A (en) 1996-04-18 1999-09-07 American Air Liquide Inc. In-line cell for absorption spectroscopy
US5880850A (en) * 1996-04-18 1999-03-09 American Air Liquide Inc Method and system for sensitive detection of molecular species in a vacuum by harmonic detection spectroscopy
US5893046A (en) * 1996-06-24 1999-04-06 Taiwan Seimconductor Manufacturing Company, Ltd. Real time monitor of reacting chemicals in semiconductor manufacturing
US5846373A (en) * 1996-06-28 1998-12-08 Lam Research Corporation Method for monitoring process endpoints in a plasma chamber and a process monitoring arrangement in a plasma chamber
US5793042A (en) * 1996-09-30 1998-08-11 Quick; Nathaniel R. Infrared spectrophotometer accelerated corrosion-erosion analysis system
US5879574A (en) * 1996-11-13 1999-03-09 Applied Materials, Inc. Systems and methods for detecting end of chamber clean in a thermal (non-plasma) process
US5712702A (en) * 1996-12-06 1998-01-27 International Business Machines Corporation Method and apparatus for determining chamber cleaning end point
US5910011A (en) * 1997-05-12 1999-06-08 Applied Materials, Inc. Method and apparatus for monitoring processes using multiple parameters of a semiconductor wafer processing system
US6278809B1 (en) * 1997-05-30 2001-08-21 Ion Optics, Inc. Fiber optic reflectance apparatus for in situ characterization of thin films
US6406641B1 (en) 1997-06-17 2002-06-18 Luxtron Corporation Liquid etch endpoint detection and process metrology
US5882378A (en) * 1997-07-25 1999-03-16 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method to detect metal impurities in the semiconductor process gases
US6129807A (en) 1997-10-06 2000-10-10 Applied Materials, Inc. Apparatus for monitoring processing of a substrate
KR100475030B1 (ko) * 1998-03-06 2005-04-14 삼성전자주식회사 반도체장치제조용챔버를플라즈마를이용하여세정하는방법
US6134005A (en) * 1998-04-23 2000-10-17 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6157447A (en) * 1998-04-23 2000-12-05 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6269278B1 (en) 1998-04-23 2001-07-31 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6221679B1 (en) * 1998-04-23 2001-04-24 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6132577A (en) * 1998-04-23 2000-10-17 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6223755B1 (en) 1998-04-23 2001-05-01 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6077386A (en) * 1998-04-23 2000-06-20 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6390019B1 (en) 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
EP1125314A1 (de) 1998-07-10 2001-08-22 Applied Materials, Inc. Verbesserte endpunktbestimmung für einen substratfabrikationsprozess
US6190037B1 (en) 1999-02-19 2001-02-20 Applied Materials, Inc. Non-intrusive, on-the-fly (OTF) temperature measurement and monitoring system
DE19929615C1 (de) * 1999-06-28 2001-04-19 Fraunhofer Ges Forschung Vorrichtung und Verwendung der Vorrichtung zur Überwachung von absichtlichen oder unvermeidbaren Schichtabscheidungen
US6265231B1 (en) * 1999-09-30 2001-07-24 Lam Research Corporation Process control via valve position and rate of position change monitoring
US6632283B1 (en) 2000-04-25 2003-10-14 Advanced Micro Devices, Inc. System and method for illuminating a semiconductor processing system
US6572252B1 (en) 2000-04-25 2003-06-03 Advanced Micro Devices, Inc. System and method for illuminating a semiconductor processing system
JP3543947B2 (ja) * 2000-05-16 2004-07-21 株式会社日立製作所 リアクタ内堆積膜厚モニタ装置およびドライプロセス処理方法
US6381021B1 (en) 2000-06-22 2002-04-30 Applied Materials, Inc. Method and apparatus for measuring reflectivity of deposited films
US6442736B1 (en) 2000-10-03 2002-08-27 L'air Liquide Societe Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'expolitation Des Procedes Georges Claude Semiconductor processing system and method for controlling moisture level therein
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
EP1274113A1 (de) * 2001-07-03 2003-01-08 Infineon Technologies SC300 GmbH & Co. KG Vorrichtung und Verfahren zum Nachweis von Flockenbildung in einer Plasmakammer
WO2003010517A1 (en) * 2001-07-24 2003-02-06 Tokyo Electron Limited Method and apparatus for monitoring the condition of plasma equipment
US20030042227A1 (en) * 2001-08-29 2003-03-06 Tokyo Electron Limited Apparatus and method for tailoring an etch profile
US7214289B2 (en) * 2001-10-24 2007-05-08 Tokyo Electron Limited Method and apparatus for wall film monitoring
EP1318211B1 (de) * 2001-12-07 2008-08-27 Infineon Technologies SC300 GmbH & Co. KG Anordnung zur Überwachung der Dicke einer Schicht, die an der Innenseite einer Prozesskammer abgeschieden wird
US7175875B2 (en) * 2002-02-15 2007-02-13 Hitachi, Ltd. Method and apparatus for plasma processing
US6740196B2 (en) * 2002-02-21 2004-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. RTA chamber with in situ reflective index monitor
JP3982402B2 (ja) * 2002-02-28 2007-09-26 東京エレクトロン株式会社 処理装置及び処理方法
EP1517184A1 (de) 2003-09-18 2005-03-23 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
JP4467571B2 (ja) * 2003-09-19 2010-05-26 アプライド マテリアルズ インコーポレイテッド 無電解堆積のエンドポイントを検出するための装置および方法
US20050214445A1 (en) * 2004-03-29 2005-09-29 Tokyo Electron Limited Method and processing system for determining coating status of a ceramic substrate heater
US7393459B2 (en) * 2004-08-06 2008-07-01 Applied Materials, Inc. Method for automatic determination of substrates states in plasma processing chambers
US20060065622A1 (en) * 2004-09-27 2006-03-30 Floyd Philip D Method and system for xenon fluoride etching with enhanced efficiency
JP4554429B2 (ja) * 2005-05-09 2010-09-29 株式会社日立ハイテクノロジーズ プラズマ発光測定システム
JP4581918B2 (ja) * 2005-08-29 2010-11-17 パナソニック株式会社 プラズマ処理装置
US8139234B2 (en) * 2005-10-26 2012-03-20 Dube George Method and apparatus for measuring optical extinction in a thin film during its deposition
JP4878187B2 (ja) * 2006-03-20 2012-02-15 東京エレクトロン株式会社 基板処理装置、堆積物モニタ装置、及び堆積物モニタ方法
JP2008166062A (ja) * 2006-12-27 2008-07-17 Hitachi High-Technologies Corp 真空容器を持つ装置
KR20090125087A (ko) * 2007-02-20 2009-12-03 퀄컴 엠이엠스 테크놀로지스, 인크. 마이크로전자기계 시스템〔ｍｅｍｓ〕의 에칭장치 및 에칭 방법
US7630859B2 (en) * 2007-05-01 2009-12-08 Verity Instruments, Inc. Method and apparatus for reducing the effects of window clouding on a viewport window in a reactive environment
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
EP2165172B1 (de) * 2007-06-13 2017-04-19 OY Halton Group, Ltd. Vorrichtungen, systeme und verfahren zur erkennung von schmierfettablagerungen in kanälen
US7569488B2 (en) * 2007-06-22 2009-08-04 Qualcomm Mems Technologies, Inc. Methods of making a MEMS device by monitoring a process parameter
CN101755232A (zh) 2007-07-25 2010-06-23 高通Mems科技公司 微机电系统显示器装置及其制造方法
US8023191B2 (en) * 2008-05-07 2011-09-20 Qualcomm Mems Technologies, Inc. Printable static interferometric images
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
US8889534B1 (en) * 2013-05-29 2014-11-18 Tokyo Electron Limited Solid state source introduction of dopants and additives for a plasma doping process
CN113130280B (zh) * 2019-12-31 2024-03-12 中微半导体设备(上海)股份有限公司 光强度监测调节机构、调节方法及等离子体处理装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4328068A (en) * 1980-07-22 1982-05-04 Rca Corporation Method for end point detection in a plasma etching process
JPH0650725B2 (ja) * 1985-02-09 1994-06-29 キヤノン株式会社 堆積膜形成装置
JPH03276657A (ja) * 1990-03-26 1991-12-06 Fujitsu Ltd 汚染モニタリング装置
JPH0412251A (ja) * 1990-05-01 1992-01-16 Kokusai Electric Co Ltd 反応室の汚れ検出装置
JPH04136746A (ja) * 1990-09-28 1992-05-11 Toshiba Corp プラズマ分光器および薄膜形成装置
JPH04355916A (ja) * 1990-10-12 1992-12-09 Seiko Epson Corp ドライエッチング装置
JPH0526737A (ja) * 1991-07-19 1993-02-02 Nippon Steel Corp 溶融金属測温用熱電対保護管及びその溶損防止方法
JPH05259250A (ja) * 1992-03-16 1993-10-08 Hitachi Ltd プラズマ処理装置のプラズマモニタ装置
US5362969A (en) * 1993-04-23 1994-11-08 Luxtron Corporation Processing endpoint detecting technique and detector structure using multiple radiation sources or discrete detectors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8158065B2 (en) 2008-09-30 2012-04-17 Advanced Micro Devices, Inc. In situ monitoring of metal contamination during microstructure processing
DE102008049774B4 (de) * 2008-09-30 2017-07-27 Advanced Micro Devices, Inc. Prozessanlage und Verfahren zur prozessinternen Überwachung der Metallkontamination während der Bearbeitung von Mikrostrukturen

Also Published As

Publication number Publication date
EP0644574A1 (de) 1995-03-22
JPH0786254A (ja) 1995-03-31
DE69403593D1 (de) 1997-07-10
EP0644574B1 (de) 1997-06-04
US5536359A (en) 1996-07-16
JP3399040B2 (ja) 2003-04-21

Similar Documents

Publication Publication Date Title
DE69403593D1 (de) Gerät und Verfahren zur Herstellung einer Halbleitervorrichtung
DE69421592D1 (de) Verfahren zur Herstellung einer Halbleitervorrichtung
DE69317800T2 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE59610212D1 (de) Schaltungseinheit und Verfahren zur Herstellung einer Schaltungseinheit
DE69330980D1 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE69425643T2 (de) Reinigungsmittel für Halbleiter-Anordnung und Verfahren zur Herstellung einer Halbleiter-Anordnung
DE69228787D1 (de) Verfahren und Anlage zur Herstellung von Halbleitervorrichtungen
DE69232432D1 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE69503532T2 (de) Verfahren zur Herstellung einer Halbleitervorrichtung
DE69231803D1 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE69514201T2 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE69731614D1 (de) Netzübergreifende einrichtung und verfahren zur herstellung einer solchen einrichtung
DE69323979T2 (de) Verfahren zur Herstellung einer Halbleitervorrichtung
DE69434695D1 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE69424725D1 (de) Verfahren und Vorrichtung zur Herstellung einer Halbleiteranordnung
DE69229314T2 (de) Halbleiteranordnung und Verfahren zur Herstellung
DE69416808T2 (de) Verfahren zur Herstellung einer mehrschichtigen Halbleitervorrichtung
DE69326908D1 (de) Verfahren zur Herstellung einer Halbleiter-Anordnung
DE69227290T2 (de) Halbleiteranordnung und Verfahren zur Herstellung
DE69615642D1 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE69528683D1 (de) Halbleiterbauteil und Verfahren zur Herstellung desselben
DE69417933T2 (de) Verfahren und Vorrichtung zur Herstellung von Halbleitervorrichtungen
DE69422590T2 (de) Verfahren zur Herstellung einer Vorrichtung
DE69522413T2 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE69511992T2 (de) Halbleiteranordnung und Verfahren zur Herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition