DE3779144D1 - Silizium enthaltende schichten und verfahren zu ihrer herstellung. - Google Patents

Silizium enthaltende schichten und verfahren zu ihrer herstellung.

Info

Publication number
DE3779144D1
DE3779144D1 DE8787102831T DE3779144T DE3779144D1 DE 3779144 D1 DE3779144 D1 DE 3779144D1 DE 8787102831 T DE8787102831 T DE 8787102831T DE 3779144 T DE3779144 T DE 3779144T DE 3779144 D1 DE3779144 D1 DE 3779144D1
Authority
DE
Germany
Prior art keywords
production
containing silicon
layers containing
layers
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787102831T
Other languages
English (en)
Inventor
Sudarsanan Varaprath
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Application granted granted Critical
Publication of DE3779144D1 publication Critical patent/DE3779144D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/903—Catalyst aided deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
DE8787102831T 1986-02-28 1987-02-27 Silizium enthaltende schichten und verfahren zu ihrer herstellung. Expired - Fee Related DE3779144D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/835,029 US4696834A (en) 1986-02-28 1986-02-28 Silicon-containing coatings and a method for their preparation

Publications (1)

Publication Number Publication Date
DE3779144D1 true DE3779144D1 (de) 1992-06-25

Family

ID=25268396

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787102831T Expired - Fee Related DE3779144D1 (de) 1986-02-28 1987-02-27 Silizium enthaltende schichten und verfahren zu ihrer herstellung.

Country Status (5)

Country Link
US (1) US4696834A (de)
EP (1) EP0234593B1 (de)
JP (1) JPS62249415A (de)
CA (1) CA1303915C (de)
DE (1) DE3779144D1 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5135607A (en) * 1986-04-11 1992-08-04 Canon Kabushiki Kaisha Process for forming deposited film
EP0264722A3 (de) * 1986-10-09 1989-07-12 Mitsubishi Materials Corporation Verfahren zur Herstellung von amorphem Silizium
US4826733A (en) * 1986-12-03 1989-05-02 Dow Corning Corporation Sin-containing coatings for electronic devices
US4753856A (en) * 1987-01-02 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from silicate esters and metal oxides
US4869929A (en) * 1987-11-10 1989-09-26 Air Products And Chemicals, Inc. Process for preparing sic protective films on metallic or metal impregnated substrates
US5057375A (en) * 1988-04-15 1991-10-15 Gordon Roy G Titanium silicide-coated glass windows
US5167986A (en) * 1988-04-15 1992-12-01 Gordon Roy G Titanium silicide-coated glass windows
US4877651A (en) * 1988-05-31 1989-10-31 Olin Corporation Process for thermally depositing silicon nitride and silicon dioxide films onto a substrate
US4877641A (en) * 1988-05-31 1989-10-31 Olin Corporation Process for plasma depositing silicon nitride and silicon dioxide films onto a substrate
DE3923390A1 (de) * 1988-07-14 1990-01-25 Canon Kk Vorrichtung zur bildung eines grossflaechigen aufgedampften films unter verwendung von wenigstens zwei getrennt gebildeten aktivierten gasen
US4957777A (en) * 1988-07-28 1990-09-18 Massachusetts Institute Of Technology Very low pressure chemical vapor deposition process for deposition of titanium silicide films
JPH0645893B2 (ja) * 1989-02-17 1994-06-15 科学技術庁長官官房会計課長 薄膜の形成方法
US6056870A (en) * 1994-08-25 2000-05-02 Reed; Larry E. Method of promoting the decomposition of silicon compounds in a process for depositing silicon upon a metal surface
TW347369B (en) * 1996-12-17 1998-12-11 Asahi Glass Co Ltd Organic substrate provided with a light absorptive antireflection film and process for production
DE19882854T1 (de) * 1997-12-02 2001-05-17 Gelest Inc Auf Silizium basierende Schichten gebildet aus Jodsilanvorstufe und Verfahren, um selbiges zu erreichen
US5952046A (en) * 1998-01-21 1999-09-14 Advanced Technology Materials, Inc. Method for liquid delivery chemical vapor deposition of carbide films on substrates
US6169031B1 (en) * 1999-05-28 2001-01-02 National Science Council Chemical vapor deposition for titanium metal thin film
WO2001078123A1 (en) * 2000-04-11 2001-10-18 Genitech Co., Ltd. Method of forming metal interconnects
US20010051215A1 (en) * 2000-04-13 2001-12-13 Gelest, Inc. Methods for chemical vapor deposition of titanium-silicon-nitrogen films
WO2001079584A1 (en) * 2000-04-13 2001-10-25 Gelest, Inc. Methods for chemical vapor deposition of titanium-silicon-nitrogen films
US20050255245A1 (en) * 2004-01-13 2005-11-17 Fanton Mark A Method and apparatus for the chemical vapor deposition of materials
US8053038B2 (en) * 2007-09-18 2011-11-08 Atomic Energy Council-Institute Of Nuclear Energy Research Method for making titanium-based compound film of poly silicon solar cell
US8993460B2 (en) * 2013-01-10 2015-03-31 Novellus Systems, Inc. Apparatuses and methods for depositing SiC/SiCN films via cross-metathesis reactions with organometallic co-reactants
US9564309B2 (en) 2013-03-14 2017-02-07 Asm Ip Holding B.V. Si precursors for deposition of SiN at low temperatures
US9824881B2 (en) * 2013-03-14 2017-11-21 Asm Ip Holding B.V. Si precursors for deposition of SiN at low temperatures
US9543140B2 (en) 2013-10-16 2017-01-10 Asm Ip Holding B.V. Deposition of boron and carbon containing materials
US9576790B2 (en) 2013-10-16 2017-02-21 Asm Ip Holding B.V. Deposition of boron and carbon containing materials
US9401273B2 (en) 2013-12-11 2016-07-26 Asm Ip Holding B.V. Atomic layer deposition of silicon carbon nitride based materials
US9576792B2 (en) 2014-09-17 2017-02-21 Asm Ip Holding B.V. Deposition of SiN
JP6503543B2 (ja) * 2015-05-08 2019-04-24 国立研究開発法人産業技術総合研究所 遷移金属シリサイド膜、その製造方法及び製造装置並びに半導体装置
US10410857B2 (en) 2015-08-24 2019-09-10 Asm Ip Holding B.V. Formation of SiN thin films
EA201892749A1 (ru) 2016-06-20 2019-07-31 Отрис Текнолоджиз Пти Лтд Нанесение покрытия на порошкообразные основы
US11056353B2 (en) 2017-06-01 2021-07-06 Asm Ip Holding B.V. Method and structure for wet etch utilizing etch protection layer comprising boron and carbon
US10580645B2 (en) 2018-04-30 2020-03-03 Asm Ip Holding B.V. Plasma enhanced atomic layer deposition (PEALD) of SiN using silicon-hydrohalide precursors
WO2021089842A1 (de) * 2019-11-07 2021-05-14 Oerlikon Surface Solutions Ag, Pfäffikon Verfahren zur herstellung einer beschichtung
KR20220081905A (ko) 2020-12-09 2022-06-16 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 증착용 실리콘 전구체

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2606811A (en) * 1947-10-10 1952-08-12 Union Carbide & Carbon Corp Hydrogenation of silicon compounds
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4079071A (en) * 1977-03-28 1978-03-14 Union Carbide Corporation Synthesis of hydrosilanes from methylchloropolysilanes
GB2028289B (en) * 1978-08-18 1982-09-02 Schumacher Co J C Producing silicon
US4391846A (en) * 1979-04-05 1983-07-05 The United States Of America As Represented By The United States Department Of Energy Method of preparing high-temperature-stable thin-film resistors
US4374182A (en) * 1980-07-07 1983-02-15 Dow Corning Corporation Preparation of silicon metal through polymer degradation
JPS5749133A (en) * 1980-09-09 1982-03-20 Matsushita Electric Ind Co Ltd Resetting unit for current breaker
US4459163A (en) * 1981-03-11 1984-07-10 Chronar Corporation Amorphous semiconductor method
CA1187622A (en) * 1981-03-11 1985-05-21 Zoltan J. Kiss Semiconductor device having a body of amorphous silicon
DE3310828A1 (de) * 1983-03-24 1984-09-27 Bayer Ag, 5090 Leverkusen Verfahren zur herstellung von silicium
DE3429899A1 (de) * 1983-08-16 1985-03-07 Canon K.K., Tokio/Tokyo Verfahren zur bildung eines abscheidungsfilms
DE3413064A1 (de) * 1984-04-06 1985-10-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von metallsilizidschichten durch abscheidung aus der gasphase bei vermindertem druck und deren verwendung
US4619038A (en) * 1985-08-15 1986-10-28 Motorola, Inc. Selective titanium silicide formation

Also Published As

Publication number Publication date
EP0234593B1 (de) 1992-05-20
US4696834A (en) 1987-09-29
CA1303915C (en) 1992-06-23
EP0234593A3 (en) 1988-08-31
EP0234593A2 (de) 1987-09-02
JPS62249415A (ja) 1987-10-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee