DE19882854T1 - Auf Silizium basierende Schichten gebildet aus Jodsilanvorstufe und Verfahren, um selbiges zu erreichen - Google Patents
Auf Silizium basierende Schichten gebildet aus Jodsilanvorstufe und Verfahren, um selbiges zu erreichenInfo
- Publication number
- DE19882854T1 DE19882854T1 DE19882854T DE19882854T DE19882854T1 DE 19882854 T1 DE19882854 T1 DE 19882854T1 DE 19882854 T DE19882854 T DE 19882854T DE 19882854 T DE19882854 T DE 19882854T DE 19882854 T1 DE19882854 T1 DE 19882854T1
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- achieve
- same
- layers formed
- based layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- IDIOJRGTRFRIJL-UHFFFAOYSA-N iodosilane Chemical compound I[SiH3] IDIOJRGTRFRIJL-UHFFFAOYSA-N 0.000 title 1
- 239000002243 precursor Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/025—Silicon compounds without C-silicon linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US6715997P | 1997-12-02 | 1997-12-02 | |
PCT/US1998/024708 WO1999028529A1 (en) | 1997-12-02 | 1998-11-20 | Silicon based films formed from iodosilane precursors and method of making the same |
Publications (1)
Publication Number | Publication Date |
---|---|
DE19882854T1 true DE19882854T1 (de) | 2001-05-17 |
Family
ID=22074100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19882854T Withdrawn DE19882854T1 (de) | 1997-12-02 | 1998-11-20 | Auf Silizium basierende Schichten gebildet aus Jodsilanvorstufe und Verfahren, um selbiges zu erreichen |
Country Status (6)
Country | Link |
---|---|
US (1) | US6586056B2 (de) |
JP (1) | JP2003522826A (de) |
KR (1) | KR20010032764A (de) |
AU (1) | AU1592899A (de) |
DE (1) | DE19882854T1 (de) |
WO (1) | WO1999028529A1 (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001223209A (ja) * | 2000-02-08 | 2001-08-17 | Seiko Epson Corp | 絶縁性,半導電性,および導電性薄膜の製造方法 |
US20010051215A1 (en) * | 2000-04-13 | 2001-12-13 | Gelest, Inc. | Methods for chemical vapor deposition of titanium-silicon-nitrogen films |
TW578214B (en) * | 2000-05-29 | 2004-03-01 | Tokyo Electron Ltd | Method of forming oxynitride film or the like and system for carrying out the same |
JP2002198368A (ja) | 2000-12-26 | 2002-07-12 | Nec Corp | 半導体装置の製造方法 |
JP2002294456A (ja) * | 2001-03-30 | 2002-10-09 | Oki Electric Ind Co Ltd | 膜の形成方法及びその方法を実施するためのcvd装置 |
DE10142267A1 (de) * | 2001-08-29 | 2003-03-27 | Infineon Technologies Ag | Verfahren zum Abscheiden von Siliziumnitrid |
US20030161949A1 (en) * | 2002-02-28 | 2003-08-28 | The Regents Of The University Of California | Vapor deposition of dihalodialklysilanes |
US20040159335A1 (en) * | 2002-05-17 | 2004-08-19 | P.C.T. Systems, Inc. | Method and apparatus for removing organic layers |
KR20050069986A (ko) * | 2002-08-18 | 2005-07-05 | 에비자 테크놀로지, 인크. | 실리콘 산화물 및 산질화물의 저온 증착 |
JP2004128195A (ja) * | 2002-10-02 | 2004-04-22 | Oki Electric Ind Co Ltd | 保護膜の製造方法 |
US20050070126A1 (en) * | 2003-04-21 | 2005-03-31 | Yoshihide Senzaki | System and method for forming multi-component dielectric films |
TW200506093A (en) * | 2003-04-21 | 2005-02-16 | Aviza Tech Inc | System and method for forming multi-component films |
JP4064912B2 (ja) * | 2003-11-27 | 2008-03-19 | 沖電気工業株式会社 | 膜の形成方法 |
US20050181633A1 (en) * | 2004-02-17 | 2005-08-18 | Hochberg Arthur K. | Precursors for depositing silicon-containing films and processes thereof |
US8182884B2 (en) * | 2005-02-28 | 2012-05-22 | GM Global Technology Operations LLC | Process for application of a hydrophilic coating to fuel cell bipolar plates |
WO2006110750A2 (en) * | 2005-04-07 | 2006-10-19 | Aviza Technology, Inc. | Multilayer, multicomponent high-k films and methods for depositing the same |
US7915735B2 (en) * | 2005-08-05 | 2011-03-29 | Micron Technology, Inc. | Selective metal deposition over dielectric layers |
CN101288195A (zh) * | 2005-08-12 | 2008-10-15 | 通用汽车环球科技运作公司 | 向燃料电池双极板施涂亲水涂层的方法 |
JP5193039B2 (ja) | 2005-08-12 | 2013-05-08 | ジーエム・グローバル・テクノロジー・オペレーションズ・インコーポレーテッド | 燃料電池バイポーラプレートのための親水性被覆、及びその製造方法 |
US8298628B2 (en) * | 2008-06-02 | 2012-10-30 | Air Products And Chemicals, Inc. | Low temperature deposition of silicon-containing films |
US8528224B2 (en) * | 2009-11-12 | 2013-09-10 | Novellus Systems, Inc. | Systems and methods for at least partially converting films to silicon oxide and/or improving film quality using ultraviolet curing in steam and densification of films using UV curing in ammonia |
US8912353B2 (en) | 2010-06-02 | 2014-12-16 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for depositing films comprising same |
WO2012060379A1 (ja) * | 2010-11-04 | 2012-05-10 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
US8771807B2 (en) | 2011-05-24 | 2014-07-08 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for making and using same |
US9564309B2 (en) * | 2013-03-14 | 2017-02-07 | Asm Ip Holding B.V. | Si precursors for deposition of SiN at low temperatures |
US9824881B2 (en) * | 2013-03-14 | 2017-11-21 | Asm Ip Holding B.V. | Si precursors for deposition of SiN at low temperatures |
US20140273531A1 (en) * | 2013-03-14 | 2014-09-18 | Asm Ip Holding B.V. | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES |
US10174424B2 (en) | 2013-04-25 | 2019-01-08 | Polyvalor, Limited Partnership | Methods for the photo-initiated chemical vapor deposition (PICVD) of coatings and coatings produced by these methods |
US9576790B2 (en) | 2013-10-16 | 2017-02-21 | Asm Ip Holding B.V. | Deposition of boron and carbon containing materials |
US9362109B2 (en) | 2013-10-16 | 2016-06-07 | Asm Ip Holding B.V. | Deposition of boron and carbon containing materials |
US9401273B2 (en) | 2013-12-11 | 2016-07-26 | Asm Ip Holding B.V. | Atomic layer deposition of silicon carbon nitride based materials |
US9576792B2 (en) | 2014-09-17 | 2017-02-21 | Asm Ip Holding B.V. | Deposition of SiN |
US9355837B2 (en) | 2014-09-25 | 2016-05-31 | Micron Technology, Inc. | Methods of forming and using materials containing silicon and nitrogen |
US11001599B2 (en) | 2015-03-23 | 2021-05-11 | Gelest Technologies, Inc. | N-alkyl substituted cyclic and oligomeric perhydridosilazanes, methods of preparation thereof, and silicon nitride films formed therefrom |
CN118007094A (zh) * | 2015-06-16 | 2024-05-10 | 弗萨姆材料美国有限责任公司 | 卤硅烷化合物和组合物以及用于使用其沉积含硅膜的方法 |
US9815858B2 (en) | 2015-06-16 | 2017-11-14 | Gelest Technologies, Inc. | Hydridosilapyrroles, hydridosilaazapyrroles, thiasilacyclopentanes, method for preparation thereof, and reaction products therefrom |
US10410857B2 (en) | 2015-08-24 | 2019-09-10 | Asm Ip Holding B.V. | Formation of SiN thin films |
RU2661320C1 (ru) * | 2017-04-26 | 2018-07-13 | Закрытое акционерное общество Научно-инженерный центр "ИНКОМСИСТЕМ" | Способ гидрофобизации субстрата |
US11056353B2 (en) | 2017-06-01 | 2021-07-06 | Asm Ip Holding B.V. | Method and structure for wet etch utilizing etch protection layer comprising boron and carbon |
US10580645B2 (en) | 2018-04-30 | 2020-03-03 | Asm Ip Holding B.V. | Plasma enhanced atomic layer deposition (PEALD) of SiN using silicon-hydrohalide precursors |
KR20220081905A (ko) | 2020-12-09 | 2022-06-16 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 증착용 실리콘 전구체 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL279257A (de) | 1962-06-04 | |||
US3652324A (en) * | 1968-08-15 | 1972-03-28 | Westinghouse Electric Corp | A METHOD OF VAPOR DEPOSITING A LAYER OF Si{11 N{11 {0 ON A SILICON BASE |
US4256514A (en) | 1978-11-03 | 1981-03-17 | International Business Machines Corporation | Method for forming a narrow dimensioned region on a body |
JPS5747706A (en) * | 1980-09-04 | 1982-03-18 | Toshio Hirai | Lump of silicon nitride containing ti and its manufacture |
JPS5772318A (en) | 1980-10-24 | 1982-05-06 | Seiko Epson Corp | Vapor growth method |
JPS5989407A (ja) | 1982-11-15 | 1984-05-23 | Mitsui Toatsu Chem Inc | アモルフアスシリコン膜の形成方法 |
JPS6043484A (ja) | 1983-08-19 | 1985-03-08 | Mitsui Toatsu Chem Inc | 広いバンドギヤツプを有するアモルフアスシリコン膜の形成方法 |
JPS6086275A (ja) | 1983-10-18 | 1985-05-15 | Seiko Epson Corp | シリコン酸化膜の製造方法 |
JPS6089575A (ja) | 1983-10-21 | 1985-05-20 | Seiko Epson Corp | シリコン窒化膜の製造方法 |
US4504521A (en) | 1984-03-22 | 1985-03-12 | Rca Corporation | LPCVD Deposition of tantalum silicide |
US4683147A (en) | 1984-04-16 | 1987-07-28 | Canon Kabushiki Kaisha | Method of forming deposition film |
US4702936A (en) | 1984-09-20 | 1987-10-27 | Applied Materials Japan, Inc. | Gas-phase growth process |
US5244698A (en) | 1985-02-21 | 1993-09-14 | Canon Kabushiki Kaisha | Process for forming deposited film |
US4696834A (en) * | 1986-02-28 | 1987-09-29 | Dow Corning Corporation | Silicon-containing coatings and a method for their preparation |
GB8628581D0 (en) * | 1986-11-28 | 1987-01-07 | Gen Electric Co Plc | Material deposition |
US4884123A (en) | 1987-02-19 | 1989-11-28 | Advanced Micro Devices, Inc. | Contact plug and interconnect employing a barrier lining and a backfilled conductor material |
JPH01247503A (ja) | 1988-03-30 | 1989-10-03 | Tdk Corp | 磁性粒子およびその製造方法 |
US5180690A (en) * | 1988-12-14 | 1993-01-19 | Energy Conversion Devices, Inc. | Method of forming a layer of doped crystalline semiconductor alloy material |
EP0417253A1 (de) * | 1989-04-04 | 1991-03-20 | Sri International | Niedrigtemperaturverfahren zur herstellung von material aus einem oder mehreren metallreagenzien und halogen enthaltendes reagens zur herstellung reaktiver zwischenprodukte |
US5149514A (en) | 1989-04-04 | 1992-09-22 | Sri International | Low temperature method of forming materials using one or more metal reactants and a halogen-containing reactant to form one or more reactive intermediates |
US5080933A (en) | 1990-09-04 | 1992-01-14 | Motorola, Inc. | Selective deposition of polycrystalline silicon |
US5728224A (en) | 1995-09-13 | 1998-03-17 | Tetra Laval Holdings & Finance S.A. | Apparatus and method for manufacturing a packaging material using gaseous phase atmospheric photo chemical vapor deposition to apply a barrier layer to a moving web substrate |
-
1998
- 1998-11-20 KR KR1020007006058A patent/KR20010032764A/ko not_active Application Discontinuation
- 1998-11-20 DE DE19882854T patent/DE19882854T1/de not_active Withdrawn
- 1998-11-20 JP JP2000523399A patent/JP2003522826A/ja active Pending
- 1998-11-20 AU AU15928/99A patent/AU1592899A/en not_active Abandoned
- 1998-11-20 WO PCT/US1998/024708 patent/WO1999028529A1/en not_active Application Discontinuation
-
2002
- 2002-02-19 US US10/079,746 patent/US6586056B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
AU1592899A (en) | 1999-06-16 |
KR20010032764A (ko) | 2001-04-25 |
US6586056B2 (en) | 2003-07-01 |
US20020119327A1 (en) | 2002-08-29 |
WO1999028529A1 (en) | 1999-06-10 |
JP2003522826A (ja) | 2003-07-29 |
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