FI119941B
(fi)
*
|
1999-10-15 |
2009-05-15 |
Asm Int |
Menetelmä nanolaminaattien valmistamiseksi
|
FI117944B
(fi)
*
|
1999-10-15 |
2007-04-30 |
Asm Int |
Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi
|
US6342277B1
(en)
*
|
1996-08-16 |
2002-01-29 |
Licensee For Microelectronics: Asm America, Inc. |
Sequential chemical vapor deposition
|
US6531193B2
(en)
|
1997-07-07 |
2003-03-11 |
The Penn State Research Foundation |
Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications
|
US7393561B2
(en)
*
|
1997-08-11 |
2008-07-01 |
Applied Materials, Inc. |
Method and apparatus for layer by layer deposition of thin films
|
US6841203B2
(en)
*
|
1997-12-24 |
2005-01-11 |
Tokyo Electron Limited |
Method of forming titanium film by CVD
|
US6974766B1
(en)
*
|
1998-10-01 |
2005-12-13 |
Applied Materials, Inc. |
In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
|
US6200893B1
(en)
*
|
1999-03-11 |
2001-03-13 |
Genus, Inc |
Radical-assisted sequential CVD
|
KR100273473B1
(ko)
*
|
1999-04-06 |
2000-11-15 |
이경수 |
박막 형성 방법
|
US7554829B2
(en)
|
1999-07-30 |
2009-06-30 |
Micron Technology, Inc. |
Transmission lines for CMOS integrated circuits
|
US6511539B1
(en)
|
1999-09-08 |
2003-01-28 |
Asm America, Inc. |
Apparatus and method for growth of a thin film
|
AU1208201A
(en)
|
1999-10-15 |
2001-04-30 |
Asm America, Inc. |
Method for depositing nanolaminate thin films on sensitive surfaces
|
FI118804B
(fi)
*
|
1999-12-03 |
2008-03-31 |
Asm Int |
Menetelmä oksidikalvojen kasvattamiseksi
|
US6319766B1
(en)
|
2000-02-22 |
2001-11-20 |
Applied Materials, Inc. |
Method of tantalum nitride deposition by tantalum oxide densification
|
DE60125338T2
(de)
|
2000-03-07 |
2007-07-05 |
Asm International N.V. |
Gradierte dünne schichten
|
US7419903B2
(en)
|
2000-03-07 |
2008-09-02 |
Asm International N.V. |
Thin films
|
FI117979B
(fi)
*
|
2000-04-14 |
2007-05-15 |
Asm Int |
Menetelmä oksidiohutkalvojen valmistamiseksi
|
US7494927B2
(en)
|
2000-05-15 |
2009-02-24 |
Asm International N.V. |
Method of growing electrical conductors
|
TW508658B
(en)
*
|
2000-05-15 |
2002-11-01 |
Asm Microchemistry Oy |
Process for producing integrated circuits
|
US7141278B2
(en)
*
|
2000-06-08 |
2006-11-28 |
Asm Genitech Korea Ltd. |
Thin film forming method
|
US20040224504A1
(en)
*
|
2000-06-23 |
2004-11-11 |
Gadgil Prasad N. |
Apparatus and method for plasma enhanced monolayer processing
|
US6620723B1
(en)
*
|
2000-06-27 |
2003-09-16 |
Applied Materials, Inc. |
Formation of boride barrier layers using chemisorption techniques
|
US7101795B1
(en)
*
|
2000-06-28 |
2006-09-05 |
Applied Materials, Inc. |
Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
|
US6551929B1
(en)
*
|
2000-06-28 |
2003-04-22 |
Applied Materials, Inc. |
Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
|
US7405158B2
(en)
*
|
2000-06-28 |
2008-07-29 |
Applied Materials, Inc. |
Methods for depositing tungsten layers employing atomic layer deposition techniques
|
US7964505B2
(en)
*
|
2005-01-19 |
2011-06-21 |
Applied Materials, Inc. |
Atomic layer deposition of tungsten materials
|
US7732327B2
(en)
|
2000-06-28 |
2010-06-08 |
Applied Materials, Inc. |
Vapor deposition of tungsten materials
|
US6936538B2
(en)
|
2001-07-16 |
2005-08-30 |
Applied Materials, Inc. |
Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
|
US20020036780A1
(en)
*
|
2000-09-27 |
2002-03-28 |
Hiroaki Nakamura |
Image processing apparatus
|
US7476420B2
(en)
*
|
2000-10-23 |
2009-01-13 |
Asm International N.V. |
Process for producing metal oxide films at low temperatures
|
TW548239B
(en)
*
|
2000-10-23 |
2003-08-21 |
Asm Microchemistry Oy |
Process for producing aluminium oxide films at low temperatures
|
US6355561B1
(en)
*
|
2000-11-21 |
2002-03-12 |
Micron Technology, Inc. |
ALD method to improve surface coverage
|
US6689220B1
(en)
*
|
2000-11-22 |
2004-02-10 |
Simplus Systems Corporation |
Plasma enhanced pulsed layer deposition
|
JP4333900B2
(ja)
|
2000-11-30 |
2009-09-16 |
エーエスエム インターナショナル エヌ.ヴェー. |
磁気メモリセル、磁気構造体及び磁気素子の製造方法、並びに磁気構造体用金属層の成長方法
|
WO2002045871A1
(en)
*
|
2000-12-06 |
2002-06-13 |
Angstron Systems, Inc. |
System and method for modulated ion-induced atomic layer deposition (mii-ald)
|
US6630201B2
(en)
*
|
2001-04-05 |
2003-10-07 |
Angstron Systems, Inc. |
Adsorption process for atomic layer deposition
|
US6800173B2
(en)
|
2000-12-15 |
2004-10-05 |
Novellus Systems, Inc. |
Variable gas conductance control for a process chamber
|
US6951804B2
(en)
*
|
2001-02-02 |
2005-10-04 |
Applied Materials, Inc. |
Formation of a tantalum-nitride layer
|
US9139906B2
(en)
*
|
2001-03-06 |
2015-09-22 |
Asm America, Inc. |
Doping with ALD technology
|
US7491634B2
(en)
*
|
2006-04-28 |
2009-02-17 |
Asm International N.V. |
Methods for forming roughened surfaces and applications thereof
|
US7563715B2
(en)
|
2005-12-05 |
2009-07-21 |
Asm International N.V. |
Method of producing thin films
|
FI109770B
(fi)
|
2001-03-16 |
2002-10-15 |
Asm Microchemistry Oy |
Menetelmä metallinitridiohutkalvojen valmistamiseksi
|
KR100853903B1
(ko)
*
|
2001-03-20 |
2008-08-25 |
맷슨 테크놀로지, 인크. |
비교적 높은 유전율을 갖는 코팅을 기판 상에 증착하는 방법
|
US20020144786A1
(en)
*
|
2001-04-05 |
2002-10-10 |
Angstron Systems, Inc. |
Substrate temperature control in an ALD reactor
|
US6596643B2
(en)
*
|
2001-05-07 |
2003-07-22 |
Applied Materials, Inc. |
CVD TiSiN barrier for copper integration
|
US6759081B2
(en)
|
2001-05-11 |
2004-07-06 |
Asm International, N.V. |
Method of depositing thin films for magnetic heads
|
EP1388178A2
(de)
|
2001-05-14 |
2004-02-11 |
CDT Oxford Limited |
Verfahren zur bildung einer metal oder silizium oder germanium und sauerstoff enthaltenden schicht auf einer oberfläche
|
US7037574B2
(en)
*
|
2001-05-23 |
2006-05-02 |
Veeco Instruments, Inc. |
Atomic layer deposition for fabricating thin films
|
KR100414156B1
(ko)
*
|
2001-05-29 |
2004-01-07 |
삼성전자주식회사 |
집적회로소자의 캐패시터 제조방법
|
US6849545B2
(en)
*
|
2001-06-20 |
2005-02-01 |
Applied Materials, Inc. |
System and method to form a composite film stack utilizing sequential deposition techniques
|
US6861334B2
(en)
*
|
2001-06-21 |
2005-03-01 |
Asm International, N.V. |
Method of fabricating trench isolation structures for integrated circuits using atomic layer deposition
|
US7211144B2
(en)
*
|
2001-07-13 |
2007-05-01 |
Applied Materials, Inc. |
Pulsed nucleation deposition of tungsten layers
|
US20070009658A1
(en)
*
|
2001-07-13 |
2007-01-11 |
Yoo Jong H |
Pulse nucleation enhanced nucleation technique for improved step coverage and better gap fill for WCVD process
|
JP2005518088A
(ja)
|
2001-07-16 |
2005-06-16 |
アプライド マテリアルズ インコーポレイテッド |
タングステン複合膜の形成
|
US20030198754A1
(en)
*
|
2001-07-16 |
2003-10-23 |
Ming Xi |
Aluminum oxide chamber and process
|
US9051641B2
(en)
|
2001-07-25 |
2015-06-09 |
Applied Materials, Inc. |
Cobalt deposition on barrier surfaces
|
US20090004850A1
(en)
|
2001-07-25 |
2009-01-01 |
Seshadri Ganguli |
Process for forming cobalt and cobalt silicide materials in tungsten contact applications
|
US20030029715A1
(en)
*
|
2001-07-25 |
2003-02-13 |
Applied Materials, Inc. |
An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
|
US8110489B2
(en)
*
|
2001-07-25 |
2012-02-07 |
Applied Materials, Inc. |
Process for forming cobalt-containing materials
|
US20080268635A1
(en)
*
|
2001-07-25 |
2008-10-30 |
Sang-Ho Yu |
Process for forming cobalt and cobalt silicide materials in copper contact applications
|
EP1421606A4
(de)
*
|
2001-08-06 |
2008-03-05 |
Genitech Co Ltd |
Geräte für die plasmaverstärkte atomische schichtablagerung (peald) und verfahren zur bildung eines dünnen leitfähigen films damit dafür
|
US6820570B2
(en)
*
|
2001-08-15 |
2004-11-23 |
Nobel Biocare Services Ag |
Atomic layer deposition reactor
|
US20030050000A1
(en)
*
|
2001-09-03 |
2003-03-13 |
Noritake Co., Limited |
Super-abrasive grinding wheel
|
US9708707B2
(en)
*
|
2001-09-10 |
2017-07-18 |
Asm International N.V. |
Nanolayer deposition using bias power treatment
|
US6718126B2
(en)
*
|
2001-09-14 |
2004-04-06 |
Applied Materials, Inc. |
Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
|
US20030059538A1
(en)
*
|
2001-09-26 |
2003-03-27 |
Applied Materials, Inc. |
Integration of barrier layer and seed layer
|
US7049226B2
(en)
*
|
2001-09-26 |
2006-05-23 |
Applied Materials, Inc. |
Integration of ALD tantalum nitride for copper metallization
|
US6936906B2
(en)
*
|
2001-09-26 |
2005-08-30 |
Applied Materials, Inc. |
Integration of barrier layer and seed layer
|
US6960537B2
(en)
|
2001-10-02 |
2005-11-01 |
Asm America, Inc. |
Incorporation of nitrogen into high k dielectric film
|
TW589684B
(en)
*
|
2001-10-10 |
2004-06-01 |
Applied Materials Inc |
Method for depositing refractory metal layers employing sequential deposition techniques
|
US6916398B2
(en)
*
|
2001-10-26 |
2005-07-12 |
Applied Materials, Inc. |
Gas delivery apparatus and method for atomic layer deposition
|
US7780785B2
(en)
|
2001-10-26 |
2010-08-24 |
Applied Materials, Inc. |
Gas delivery apparatus for atomic layer deposition
|
KR100760291B1
(ko)
*
|
2001-11-08 |
2007-09-19 |
에이에스엠지니텍코리아 주식회사 |
박막 형성 방법
|
KR100782529B1
(ko)
*
|
2001-11-08 |
2007-12-06 |
에이에스엠지니텍코리아 주식회사 |
증착 장치
|
US6821891B2
(en)
*
|
2001-11-16 |
2004-11-23 |
Applied Materials, Inc. |
Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors
|
US6773507B2
(en)
*
|
2001-12-06 |
2004-08-10 |
Applied Materials, Inc. |
Apparatus and method for fast-cycle atomic layer deposition
|
US7081271B2
(en)
*
|
2001-12-07 |
2006-07-25 |
Applied Materials, Inc. |
Cyclical deposition of refractory metal silicon nitride
|
US6900122B2
(en)
|
2001-12-20 |
2005-05-31 |
Micron Technology, Inc. |
Low-temperature grown high-quality ultra-thin praseodymium gate dielectrics
|
US6809026B2
(en)
|
2001-12-21 |
2004-10-26 |
Applied Materials, Inc. |
Selective deposition of a barrier layer on a metal film
|
US6939801B2
(en)
*
|
2001-12-21 |
2005-09-06 |
Applied Materials, Inc. |
Selective deposition of a barrier layer on a dielectric material
|
CN100349314C
(zh)
*
|
2002-01-03 |
2007-11-14 |
尼电源系统公司 |
其上具有共形导电层的多孔燃料电池电极结构
|
US6670071B2
(en)
*
|
2002-01-15 |
2003-12-30 |
Quallion Llc |
Electric storage battery construction and method of manufacture
|
US7091412B2
(en)
*
|
2002-03-04 |
2006-08-15 |
Nanoset, Llc |
Magnetically shielded assembly
|
US20040210289A1
(en)
*
|
2002-03-04 |
2004-10-21 |
Xingwu Wang |
Novel nanomagnetic particles
|
US7162302B2
(en)
*
|
2002-03-04 |
2007-01-09 |
Nanoset Llc |
Magnetically shielded assembly
|
US7175713B2
(en)
*
|
2002-01-25 |
2007-02-13 |
Applied Materials, Inc. |
Apparatus for cyclical deposition of thin films
|
US6998014B2
(en)
*
|
2002-01-26 |
2006-02-14 |
Applied Materials, Inc. |
Apparatus and method for plasma assisted deposition
|
US6911391B2
(en)
*
|
2002-01-26 |
2005-06-28 |
Applied Materials, Inc. |
Integration of titanium and titanium nitride layers
|
US6824816B2
(en)
*
|
2002-01-29 |
2004-11-30 |
Asm International N.V. |
Process for producing metal thin films by ALD
|
US6827978B2
(en)
*
|
2002-02-11 |
2004-12-07 |
Applied Materials, Inc. |
Deposition of tungsten films
|
JP4168676B2
(ja)
*
|
2002-02-15 |
2008-10-22 |
コニカミノルタホールディングス株式会社 |
製膜方法
|
US6833161B2
(en)
*
|
2002-02-26 |
2004-12-21 |
Applied Materials, Inc. |
Cyclical deposition of tungsten nitride for metal oxide gate electrode
|
US6972267B2
(en)
*
|
2002-03-04 |
2005-12-06 |
Applied Materials, Inc. |
Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
|
US7220312B2
(en)
*
|
2002-03-13 |
2007-05-22 |
Micron Technology, Inc. |
Methods for treating semiconductor substrates
|
US6825134B2
(en)
*
|
2002-03-26 |
2004-11-30 |
Applied Materials, Inc. |
Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow
|
US6800134B2
(en)
*
|
2002-03-26 |
2004-10-05 |
Micron Technology, Inc. |
Chemical vapor deposition methods and atomic layer deposition methods
|
EP1490529A1
(de)
*
|
2002-03-28 |
2004-12-29 |
President And Fellows Of Harvard College |
Dampfphasenabscheidung von sio2-nanolaminaten
|
US7439191B2
(en)
*
|
2002-04-05 |
2008-10-21 |
Applied Materials, Inc. |
Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
|
KR100479639B1
(ko)
*
|
2002-04-06 |
2005-03-30 |
재단법인서울대학교산학협력재단 |
다층 박막의 제조를 위한 화학 기상 증착 장치 및 이를 이용한 다층 박막 증착 방법
|
US6720027B2
(en)
*
|
2002-04-08 |
2004-04-13 |
Applied Materials, Inc. |
Cyclical deposition of a variable content titanium silicon nitride layer
|
US6846516B2
(en)
*
|
2002-04-08 |
2005-01-25 |
Applied Materials, Inc. |
Multiple precursor cyclical deposition system
|
US6875271B2
(en)
*
|
2002-04-09 |
2005-04-05 |
Applied Materials, Inc. |
Simultaneous cyclical deposition in different processing regions
|
US7279432B2
(en)
*
|
2002-04-16 |
2007-10-09 |
Applied Materials, Inc. |
System and method for forming an integrated barrier layer
|
US6932871B2
(en)
|
2002-04-16 |
2005-08-23 |
Applied Materials, Inc. |
Multi-station deposition apparatus and method
|
US20030235961A1
(en)
*
|
2002-04-17 |
2003-12-25 |
Applied Materials, Inc. |
Cyclical sequential deposition of multicomponent films
|
WO2003089682A1
(en)
*
|
2002-04-19 |
2003-10-30 |
Mattson Technology, Inc. |
System for depositing a film onto a substrate using a low vapor pressure gas precursor
|
US6861094B2
(en)
*
|
2002-04-25 |
2005-03-01 |
Micron Technology, Inc. |
Methods for forming thin layers of materials on micro-device workpieces
|
US7160577B2
(en)
|
2002-05-02 |
2007-01-09 |
Micron Technology, Inc. |
Methods for atomic-layer deposition of aluminum oxides in integrated circuits
|
US6979489B2
(en)
*
|
2002-05-15 |
2005-12-27 |
Rutgers, The State University Of New Jersey |
Zinc oxide nanotip and fabricating method thereof
|
US20030215570A1
(en)
*
|
2002-05-16 |
2003-11-20 |
Applied Materials, Inc. |
Deposition of silicon nitride
|
US20040086434A1
(en)
*
|
2002-11-04 |
2004-05-06 |
Gadgil Pradad N. |
Apparatus and method for treating objects with radicals generated from plasma
|
US20040129212A1
(en)
*
|
2002-05-20 |
2004-07-08 |
Gadgil Pradad N. |
Apparatus and method for delivery of reactive chemical precursors to the surface to be treated
|
US6838114B2
(en)
*
|
2002-05-24 |
2005-01-04 |
Micron Technology, Inc. |
Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
|
US20040009665A1
(en)
*
|
2002-06-04 |
2004-01-15 |
Applied Materials, Inc. |
Deposition of copper films
|
US7041335B2
(en)
*
|
2002-06-04 |
2006-05-09 |
Applied Materials, Inc. |
Titanium tantalum nitride silicide layer
|
US7205218B2
(en)
|
2002-06-05 |
2007-04-17 |
Micron Technology, Inc. |
Method including forming gate dielectrics having multiple lanthanide oxide layers
|
US7135421B2
(en)
|
2002-06-05 |
2006-11-14 |
Micron Technology, Inc. |
Atomic layer-deposited hafnium aluminum oxide
|
US20030232501A1
(en)
*
|
2002-06-14 |
2003-12-18 |
Kher Shreyas S. |
Surface pre-treatment for enhancement of nucleation of high dielectric constant materials
|
US6858547B2
(en)
*
|
2002-06-14 |
2005-02-22 |
Applied Materials, Inc. |
System and method for forming a gate dielectric
|
US7067439B2
(en)
*
|
2002-06-14 |
2006-06-27 |
Applied Materials, Inc. |
ALD metal oxide deposition process using direct oxidation
|
TWI278532B
(en)
*
|
2002-06-23 |
2007-04-11 |
Asml Us Inc |
Method for energy-assisted atomic layer deposition and removal
|
US7118783B2
(en)
*
|
2002-06-26 |
2006-10-10 |
Micron Technology, Inc. |
Methods and apparatus for vapor processing of micro-device workpieces
|
US6821347B2
(en)
*
|
2002-07-08 |
2004-11-23 |
Micron Technology, Inc. |
Apparatus and method for depositing materials onto microelectronic workpieces
|
US7221586B2
(en)
|
2002-07-08 |
2007-05-22 |
Micron Technology, Inc. |
Memory utilizing oxide nanolaminates
|
US6838125B2
(en)
*
|
2002-07-10 |
2005-01-04 |
Applied Materials, Inc. |
Method of film deposition using activated precursor gases
|
US20040009336A1
(en)
*
|
2002-07-11 |
2004-01-15 |
Applied Materials, Inc. |
Titanium silicon nitride (TISIN) barrier layer for copper diffusion
|
US20040013803A1
(en)
*
|
2002-07-16 |
2004-01-22 |
Applied Materials, Inc. |
Formation of titanium nitride films using a cyclical deposition process
|
US7186385B2
(en)
|
2002-07-17 |
2007-03-06 |
Applied Materials, Inc. |
Apparatus for providing gas to a processing chamber
|
US6955211B2
(en)
|
2002-07-17 |
2005-10-18 |
Applied Materials, Inc. |
Method and apparatus for gas temperature control in a semiconductor processing system
|
US7066194B2
(en)
*
|
2002-07-19 |
2006-06-27 |
Applied Materials, Inc. |
Valve design and configuration for fast delivery system
|
US6772072B2
(en)
*
|
2002-07-22 |
2004-08-03 |
Applied Materials, Inc. |
Method and apparatus for monitoring solid precursor delivery
|
KR100464855B1
(ko)
*
|
2002-07-26 |
2005-01-06 |
삼성전자주식회사 |
박막 형성 방법과, 이를 이용한 커패시터 형성 방법 및트랜지스터 형성 방법
|
US6915592B2
(en)
*
|
2002-07-29 |
2005-07-12 |
Applied Materials, Inc. |
Method and apparatus for generating gas to a processing chamber
|
US6921702B2
(en)
|
2002-07-30 |
2005-07-26 |
Micron Technology Inc. |
Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
|
US20050084610A1
(en)
*
|
2002-08-13 |
2005-04-21 |
Selitser Simon I. |
Atmospheric pressure molecular layer CVD
|
US6790791B2
(en)
|
2002-08-15 |
2004-09-14 |
Micron Technology, Inc. |
Lanthanide doped TiOx dielectric films
|
US6955725B2
(en)
*
|
2002-08-15 |
2005-10-18 |
Micron Technology, Inc. |
Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
|
US6927140B2
(en)
|
2002-08-21 |
2005-08-09 |
Intel Corporation |
Method for fabricating a bipolar transistor base
|
US20040036129A1
(en)
*
|
2002-08-22 |
2004-02-26 |
Micron Technology, Inc. |
Atomic layer deposition of CMOS gates with variable work functions
|
US6967154B2
(en)
*
|
2002-08-26 |
2005-11-22 |
Micron Technology, Inc. |
Enhanced atomic layer deposition
|
US6984592B2
(en)
*
|
2002-08-28 |
2006-01-10 |
Micron Technology, Inc. |
Systems and methods for forming metal-doped alumina
|
US7253122B2
(en)
*
|
2002-08-28 |
2007-08-07 |
Micron Technology, Inc. |
Systems and methods for forming metal oxides using metal diketonates and/or ketoimines
|
US7087481B2
(en)
*
|
2002-08-28 |
2006-08-08 |
Micron Technology, Inc. |
Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands
|
US7084078B2
(en)
|
2002-08-29 |
2006-08-01 |
Micron Technology, Inc. |
Atomic layer deposited lanthanide doped TiOx dielectric films
|
US6821563B2
(en)
|
2002-10-02 |
2004-11-23 |
Applied Materials, Inc. |
Gas distribution system for cyclical layer deposition
|
US20040065255A1
(en)
*
|
2002-10-02 |
2004-04-08 |
Applied Materials, Inc. |
Cyclical layer deposition system
|
US6770536B2
(en)
*
|
2002-10-03 |
2004-08-03 |
Agere Systems Inc. |
Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate
|
US6905737B2
(en)
*
|
2002-10-11 |
2005-06-14 |
Applied Materials, Inc. |
Method of delivering activated species for rapid cyclical deposition
|
WO2004035858A2
(en)
*
|
2002-10-15 |
2004-04-29 |
Rensselaer Polytechnic Institute |
Atomic layer deposition of noble metals
|
US7540920B2
(en)
*
|
2002-10-18 |
2009-06-02 |
Applied Materials, Inc. |
Silicon-containing layer deposition with silicon compounds
|
EP1420080A3
(de)
*
|
2002-11-14 |
2005-11-09 |
Applied Materials, Inc. |
Vorrichtung und Verfahren zu hybriden chemischen Abscheidungsverfahren
|
US7101813B2
(en)
|
2002-12-04 |
2006-09-05 |
Micron Technology Inc. |
Atomic layer deposited Zr-Sn-Ti-O films
|
US20040142558A1
(en)
*
|
2002-12-05 |
2004-07-22 |
Granneman Ernst H. A. |
Apparatus and method for atomic layer deposition on substrates
|
US7097886B2
(en)
*
|
2002-12-13 |
2006-08-29 |
Applied Materials, Inc. |
Deposition process for high aspect ratio trenches
|
US7244683B2
(en)
*
|
2003-01-07 |
2007-07-17 |
Applied Materials, Inc. |
Integration of ALD/CVD barriers with porous low k materials
|
US20040134427A1
(en)
*
|
2003-01-09 |
2004-07-15 |
Derderian Garo J. |
Deposition chamber surface enhancement and resulting deposition chambers
|
US6808748B2
(en)
*
|
2003-01-23 |
2004-10-26 |
Applied Materials, Inc. |
Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology
|
US6753248B1
(en)
|
2003-01-27 |
2004-06-22 |
Applied Materials, Inc. |
Post metal barrier/adhesion film
|
DE10303413B3
(de)
*
|
2003-01-29 |
2004-08-05 |
Infineon Technologies Ag |
Verfahren zur Herstellung eines Oxidkragens für einen Grabenkondensator
|
US6863725B2
(en)
*
|
2003-02-04 |
2005-03-08 |
Micron Technology, Inc. |
Method of forming a Ta2O5 comprising layer
|
US9121098B2
(en)
|
2003-02-04 |
2015-09-01 |
Asm International N.V. |
NanoLayer Deposition process for composite films
|
US7713592B2
(en)
*
|
2003-02-04 |
2010-05-11 |
Tegal Corporation |
Nanolayer deposition process
|
US7198820B2
(en)
*
|
2003-02-06 |
2007-04-03 |
Planar Systems, Inc. |
Deposition of carbon- and transition metal-containing thin films
|
JP4361747B2
(ja)
*
|
2003-03-04 |
2009-11-11 |
東京エレクトロン株式会社 |
薄膜の形成方法
|
US7192892B2
(en)
*
|
2003-03-04 |
2007-03-20 |
Micron Technology, Inc. |
Atomic layer deposited dielectric layers
|
US20040178175A1
(en)
*
|
2003-03-12 |
2004-09-16 |
Pellin Michael J. |
Atomic layer deposition for high temperature superconductor material synthesis
|
US6955986B2
(en)
|
2003-03-27 |
2005-10-18 |
Asm International N.V. |
Atomic layer deposition methods for forming a multi-layer adhesion-barrier layer for integrated circuits
|
JP4009550B2
(ja)
*
|
2003-03-27 |
2007-11-14 |
エルピーダメモリ株式会社 |
金属酸化膜の形成方法
|
US7135369B2
(en)
|
2003-03-31 |
2006-11-14 |
Micron Technology, Inc. |
Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9
|
US20040198069A1
(en)
*
|
2003-04-04 |
2004-10-07 |
Applied Materials, Inc. |
Method for hafnium nitride deposition
|
US20050244337A1
(en)
*
|
2003-04-08 |
2005-11-03 |
Xingwu Wang |
Medical device with a marker
|
US20050240100A1
(en)
*
|
2003-04-08 |
2005-10-27 |
Xingwu Wang |
MRI imageable medical device
|
US20050079132A1
(en)
*
|
2003-04-08 |
2005-04-14 |
Xingwu Wang |
Medical device with low magnetic susceptibility
|
US20050119725A1
(en)
*
|
2003-04-08 |
2005-06-02 |
Xingwu Wang |
Energetically controlled delivery of biologically active material from an implanted medical device
|
US20050149169A1
(en)
*
|
2003-04-08 |
2005-07-07 |
Xingwu Wang |
Implantable medical device
|
US20050261763A1
(en)
*
|
2003-04-08 |
2005-11-24 |
Xingwu Wang |
Medical device
|
US20050025797A1
(en)
*
|
2003-04-08 |
2005-02-03 |
Xingwu Wang |
Medical device with low magnetic susceptibility
|
US20050278020A1
(en)
*
|
2003-04-08 |
2005-12-15 |
Xingwu Wang |
Medical device
|
US20060102871A1
(en)
*
|
2003-04-08 |
2006-05-18 |
Xingwu Wang |
Novel composition
|
US20070010702A1
(en)
*
|
2003-04-08 |
2007-01-11 |
Xingwu Wang |
Medical device with low magnetic susceptibility
|
US20050155779A1
(en)
*
|
2003-04-08 |
2005-07-21 |
Xingwu Wang |
Coated substrate assembly
|
US20050149002A1
(en)
*
|
2003-04-08 |
2005-07-07 |
Xingwu Wang |
Markers for visualizing interventional medical devices
|
US20040254419A1
(en)
*
|
2003-04-08 |
2004-12-16 |
Xingwu Wang |
Therapeutic assembly
|
US7183186B2
(en)
|
2003-04-22 |
2007-02-27 |
Micro Technology, Inc. |
Atomic layer deposited ZrTiO4 films
|
KR101191222B1
(ko)
*
|
2003-04-23 |
2012-10-16 |
아익스트론 인코포레이티드 |
트랜지언트 강화 원자층 증착
|
US7335396B2
(en)
*
|
2003-04-24 |
2008-02-26 |
Micron Technology, Inc. |
Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
|
US20040211357A1
(en)
*
|
2003-04-24 |
2004-10-28 |
Gadgil Pradad N. |
Method of manufacturing a gap-filled structure of a semiconductor device
|
US7537662B2
(en)
*
|
2003-04-29 |
2009-05-26 |
Asm International N.V. |
Method and apparatus for depositing thin films on a surface
|
US7601223B2
(en)
*
|
2003-04-29 |
2009-10-13 |
Asm International N.V. |
Showerhead assembly and ALD methods
|
US7399357B2
(en)
*
|
2003-05-08 |
2008-07-15 |
Arthur Sherman |
Atomic layer deposition using multilayers
|
US6930060B2
(en)
*
|
2003-06-18 |
2005-08-16 |
International Business Machines Corporation |
Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectric
|
KR20060079144A
(ko)
*
|
2003-06-18 |
2006-07-05 |
어플라이드 머티어리얼스, 인코포레이티드 |
배리어 물질의 원자층 증착
|
US7192824B2
(en)
|
2003-06-24 |
2007-03-20 |
Micron Technology, Inc. |
Lanthanide oxide / hafnium oxide dielectric layers
|
US20100129548A1
(en)
*
|
2003-06-27 |
2010-05-27 |
Sundew Technologies, Llc |
Ald apparatus and method
|
US7638167B2
(en)
*
|
2004-06-04 |
2009-12-29 |
Applied Microstructures, Inc. |
Controlled deposition of silicon-containing coatings adhered by an oxide layer
|
US7662233B2
(en)
*
|
2003-06-27 |
2010-02-16 |
Ofer Sneh |
ALD apparatus and method
|
US9725805B2
(en)
*
|
2003-06-27 |
2017-08-08 |
Spts Technologies Limited |
Apparatus and method for controlled application of reactive vapors to produce thin films and coatings
|
US20050271893A1
(en)
*
|
2004-06-04 |
2005-12-08 |
Applied Microstructures, Inc. |
Controlled vapor deposition of multilayered coatings adhered by an oxide layer
|
US20040261703A1
(en)
*
|
2003-06-27 |
2004-12-30 |
Jeffrey D. Chinn |
Apparatus and method for controlled application of reactive vapors to produce thin films and coatings
|
CN1780935B
(zh)
*
|
2003-07-16 |
2010-05-05 |
柯尼卡美能达控股株式会社 |
薄膜制造方法以及具有由此薄膜制造方法形成的薄膜的基材
|
US7399388B2
(en)
*
|
2003-07-25 |
2008-07-15 |
Applied Materials, Inc. |
Sequential gas flow oxide deposition technique
|
US7067407B2
(en)
*
|
2003-08-04 |
2006-06-27 |
Asm International, N.V. |
Method of growing electrical conductors
|
US7230292B2
(en)
*
|
2003-08-05 |
2007-06-12 |
Micron Technology, Inc. |
Stud electrode and process for making same
|
WO2005015622A1
(ja)
*
|
2003-08-11 |
2005-02-17 |
Tokyo Electron Limited |
成膜方法
|
US7344755B2
(en)
*
|
2003-08-21 |
2008-03-18 |
Micron Technology, Inc. |
Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
|
US7235138B2
(en)
*
|
2003-08-21 |
2007-06-26 |
Micron Technology, Inc. |
Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
|
US7422635B2
(en)
*
|
2003-08-28 |
2008-09-09 |
Micron Technology, Inc. |
Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
|
US6903031B2
(en)
*
|
2003-09-03 |
2005-06-07 |
Applied Materials, Inc. |
In-situ-etch-assisted HDP deposition using SiF4 and hydrogen
|
US8361548B2
(en)
*
|
2003-09-05 |
2013-01-29 |
Yield Engineering Systems, Inc. |
Method for efficient coating of substrates including plasma cleaning and dehydration
|
US7056806B2
(en)
*
|
2003-09-17 |
2006-06-06 |
Micron Technology, Inc. |
Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
|
US7282239B2
(en)
*
|
2003-09-18 |
2007-10-16 |
Micron Technology, Inc. |
Systems and methods for depositing material onto microfeature workpieces in reaction chambers
|
US20050067103A1
(en)
*
|
2003-09-26 |
2005-03-31 |
Applied Materials, Inc. |
Interferometer endpoint monitoring device
|
US20050069641A1
(en)
*
|
2003-09-30 |
2005-03-31 |
Tokyo Electron Limited |
Method for depositing metal layers using sequential flow deposition
|
US6924223B2
(en)
*
|
2003-09-30 |
2005-08-02 |
Tokyo Electron Limited |
Method of forming a metal layer using an intermittent precursor gas flow process
|
US7323231B2
(en)
*
|
2003-10-09 |
2008-01-29 |
Micron Technology, Inc. |
Apparatus and methods for plasma vapor deposition processes
|
US7581511B2
(en)
*
|
2003-10-10 |
2009-09-01 |
Micron Technology, Inc. |
Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
|
US7166528B2
(en)
|
2003-10-10 |
2007-01-23 |
Applied Materials, Inc. |
Methods of selective deposition of heavily doped epitaxial SiGe
|
US7647886B2
(en)
|
2003-10-15 |
2010-01-19 |
Micron Technology, Inc. |
Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
|
US7071118B2
(en)
*
|
2003-11-12 |
2006-07-04 |
Veeco Instruments, Inc. |
Method and apparatus for fabricating a conformal thin film on a substrate
|
US20050109276A1
(en)
*
|
2003-11-25 |
2005-05-26 |
Applied Materials, Inc. |
Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber
|
US7258892B2
(en)
|
2003-12-10 |
2007-08-21 |
Micron Technology, Inc. |
Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
|
US20070027532A1
(en)
*
|
2003-12-22 |
2007-02-01 |
Xingwu Wang |
Medical device
|
EP1713722A1
(de)
*
|
2003-12-24 |
2006-10-25 |
Nanometrix Inc. |
Kontinuierliche herstellung von kohlenstoffnanoröhren
|
US7906393B2
(en)
|
2004-01-28 |
2011-03-15 |
Micron Technology, Inc. |
Methods for forming small-scale capacitor structures
|
US20050181535A1
(en)
*
|
2004-02-17 |
2005-08-18 |
Yun Sun J. |
Method of fabricating passivation layer for organic devices
|
US20050214458A1
(en)
*
|
2004-03-01 |
2005-09-29 |
Meiere Scott H |
Low zirconium hafnium halide compositions
|
US20060062910A1
(en)
*
|
2004-03-01 |
2006-03-23 |
Meiere Scott H |
Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof
|
TWI383063B
(zh)
*
|
2004-03-01 |
2013-01-21 |
Praxair Technology Inc |
低鋯之鹵化鉿組成物
|
US7087497B2
(en)
*
|
2004-03-04 |
2006-08-08 |
Applied Materials |
Low-thermal-budget gapfill process
|
US20050210455A1
(en)
*
|
2004-03-18 |
2005-09-22 |
International Business Machines Corporation |
Method for generating an executable workflow code from an unstructured cyclic process model
|
US20050208239A1
(en)
*
|
2004-03-18 |
2005-09-22 |
3M Innovative Properties Company |
Flexible article comprising pocket
|
US7405143B2
(en)
*
|
2004-03-25 |
2008-07-29 |
Asm International N.V. |
Method for fabricating a seed layer
|
US20050249873A1
(en)
*
|
2004-05-05 |
2005-11-10 |
Demetrius Sarigiannis |
Apparatuses and methods for producing chemically reactive vapors used in manufacturing microelectronic devices
|
US8133554B2
(en)
*
|
2004-05-06 |
2012-03-13 |
Micron Technology, Inc. |
Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
|
US20050252449A1
(en)
*
|
2004-05-12 |
2005-11-17 |
Nguyen Son T |
Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
|
US8323754B2
(en)
*
|
2004-05-21 |
2012-12-04 |
Applied Materials, Inc. |
Stabilization of high-k dielectric materials
|
US20060153995A1
(en)
*
|
2004-05-21 |
2006-07-13 |
Applied Materials, Inc. |
Method for fabricating a dielectric stack
|
US20060062917A1
(en)
*
|
2004-05-21 |
2006-03-23 |
Shankar Muthukrishnan |
Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane
|
US20060019033A1
(en)
*
|
2004-05-21 |
2006-01-26 |
Applied Materials, Inc. |
Plasma treatment of hafnium-containing materials
|
US8119210B2
(en)
|
2004-05-21 |
2012-02-21 |
Applied Materials, Inc. |
Formation of a silicon oxynitride layer on a high-k dielectric material
|
US7699932B2
(en)
*
|
2004-06-02 |
2010-04-20 |
Micron Technology, Inc. |
Reactors, systems and methods for depositing thin films onto microfeature workpieces
|
US7695775B2
(en)
*
|
2004-06-04 |
2010-04-13 |
Applied Microstructures, Inc. |
Controlled vapor deposition of biocompatible coatings over surface-treated substrates
|
US7879396B2
(en)
*
|
2004-06-04 |
2011-02-01 |
Applied Microstructures, Inc. |
High aspect ratio performance coatings for biological microfluidics
|
WO2005121397A2
(en)
*
|
2004-06-04 |
2005-12-22 |
Applied Microstructures, Inc. |
Controlled vapor deposition of multilayered coatings adhered by an oxide layer
|
CN101684550B
(zh)
|
2004-06-28 |
2012-04-11 |
剑桥纳米科技公司 |
设计为用于气相沉积系统中的阱
|
US20070286965A1
(en)
*
|
2006-06-08 |
2007-12-13 |
Martin Jay Seamons |
Methods for the reduction and elimination of particulate contamination with cvd of amorphous carbon
|
US20060019493A1
(en)
*
|
2004-07-15 |
2006-01-26 |
Li Wei M |
Methods of metallization for microelectronic devices utilizing metal oxide
|
US7241686B2
(en)
*
|
2004-07-20 |
2007-07-10 |
Applied Materials, Inc. |
Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
|
US20060019032A1
(en)
*
|
2004-07-23 |
2006-01-26 |
Yaxin Wang |
Low thermal budget silicon nitride formation for advance transistor fabrication
|
US7081421B2
(en)
|
2004-08-26 |
2006-07-25 |
Micron Technology, Inc. |
Lanthanide oxide dielectric layer
|
US8158488B2
(en)
*
|
2004-08-31 |
2012-04-17 |
Micron Technology, Inc. |
Method of increasing deposition rate of silicon dioxide on a catalyst
|
US7588988B2
(en)
|
2004-08-31 |
2009-09-15 |
Micron Technology, Inc. |
Method of forming apparatus having oxide films formed using atomic layer deposition
|
US7494939B2
(en)
|
2004-08-31 |
2009-02-24 |
Micron Technology, Inc. |
Methods for forming a lanthanum-metal oxide dielectric layer
|
US20060118758A1
(en)
*
|
2004-09-15 |
2006-06-08 |
Xingwu Wang |
Material to enable magnetic resonance imaging of implantable medical devices
|
US20060084283A1
(en)
*
|
2004-10-20 |
2006-04-20 |
Paranjpe Ajit P |
Low temperature sin deposition methods
|
US7106096B2
(en)
*
|
2004-11-11 |
2006-09-12 |
International Business Machines Corporation |
Circuit and method of controlling integrated circuit power consumption using phase change switches
|
US20060105114A1
(en)
*
|
2004-11-16 |
2006-05-18 |
White John M |
Multi-layer high quality gate dielectric for low-temperature poly-silicon TFTs
|
US7682940B2
(en)
|
2004-12-01 |
2010-03-23 |
Applied Materials, Inc. |
Use of Cl2 and/or HCl during silicon epitaxial film formation
|
US7312128B2
(en)
*
|
2004-12-01 |
2007-12-25 |
Applied Materials, Inc. |
Selective epitaxy process with alternating gas supply
|
US7560352B2
(en)
*
|
2004-12-01 |
2009-07-14 |
Applied Materials, Inc. |
Selective deposition
|
US7429402B2
(en)
*
|
2004-12-10 |
2008-09-30 |
Applied Materials, Inc. |
Ruthenium as an underlayer for tungsten film deposition
|
US7235501B2
(en)
|
2004-12-13 |
2007-06-26 |
Micron Technology, Inc. |
Lanthanum hafnium oxide dielectrics
|
US7560395B2
(en)
|
2005-01-05 |
2009-07-14 |
Micron Technology, Inc. |
Atomic layer deposited hafnium tantalum oxide dielectrics
|
US20060165873A1
(en)
*
|
2005-01-25 |
2006-07-27 |
Micron Technology, Inc. |
Plasma detection and associated systems and methods for controlling microfeature workpiece deposition processes
|
US7235492B2
(en)
|
2005-01-31 |
2007-06-26 |
Applied Materials, Inc. |
Low temperature etchant for treatment of silicon-containing surfaces
|
US7508648B2
(en)
|
2005-02-08 |
2009-03-24 |
Micron Technology, Inc. |
Atomic layer deposition of Dy doped HfO2 films as gate dielectrics
|
US20060177601A1
(en)
*
|
2005-02-10 |
2006-08-10 |
Hyung-Sang Park |
Method of forming a ruthenium thin film using a plasma enhanced atomic layer deposition apparatus and the method thereof
|
TW200633947A
(en)
*
|
2005-02-16 |
2006-10-01 |
Ngk Insulators Ltd |
Joined body and manufacturing method for the same
|
US7498247B2
(en)
|
2005-02-23 |
2009-03-03 |
Micron Technology, Inc. |
Atomic layer deposition of Hf3N4/HfO2 films as gate dielectrics
|
US8025922B2
(en)
*
|
2005-03-15 |
2011-09-27 |
Asm International N.V. |
Enhanced deposition of noble metals
|
US7608549B2
(en)
*
|
2005-03-15 |
2009-10-27 |
Asm America, Inc. |
Method of forming non-conformal layers
|
US7666773B2
(en)
|
2005-03-15 |
2010-02-23 |
Asm International N.V. |
Selective deposition of noble metal thin films
|
US20060216548A1
(en)
*
|
2005-03-22 |
2006-09-28 |
Ming Mao |
Nanolaminate thin films and method for forming the same using atomic layer deposition
|
CN100523287C
(zh)
*
|
2005-03-23 |
2009-08-05 |
东京毅力科创株式会社 |
成膜装置和成膜方法
|
US7687409B2
(en)
|
2005-03-29 |
2010-03-30 |
Micron Technology, Inc. |
Atomic layer deposited titanium silicon oxide films
|
CN100595974C
(zh)
*
|
2005-03-30 |
2010-03-24 |
松下电器产业株式会社 |
传输线
|
US20060237138A1
(en)
*
|
2005-04-26 |
2006-10-26 |
Micron Technology, Inc. |
Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes
|
US7662729B2
(en)
|
2005-04-28 |
2010-02-16 |
Micron Technology, Inc. |
Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
|
US7390756B2
(en)
*
|
2005-04-28 |
2008-06-24 |
Micron Technology, Inc. |
Atomic layer deposited zirconium silicon oxide films
|
KR20060124879A
(ko)
*
|
2005-05-26 |
2006-12-06 |
주성엔지니어링(주) |
박막 증착 방법
|
US7396415B2
(en)
*
|
2005-06-02 |
2008-07-08 |
Asm America, Inc. |
Apparatus and methods for isolating chemical vapor reactions at a substrate surface
|
US20060272577A1
(en)
*
|
2005-06-03 |
2006-12-07 |
Ming Mao |
Method and apparatus for decreasing deposition time of a thin film
|
JP4456533B2
(ja)
*
|
2005-06-14 |
2010-04-28 |
東京エレクトロン株式会社 |
シリコン酸化膜の形成方法、シリコン酸化膜の形成装置及びプログラム
|
US7648927B2
(en)
*
|
2005-06-21 |
2010-01-19 |
Applied Materials, Inc. |
Method for forming silicon-containing materials during a photoexcitation deposition process
|
US7651955B2
(en)
*
|
2005-06-21 |
2010-01-26 |
Applied Materials, Inc. |
Method for forming silicon-containing materials during a photoexcitation deposition process
|
US20060286774A1
(en)
*
|
2005-06-21 |
2006-12-21 |
Applied Materials. Inc. |
Method for forming silicon-containing materials during a photoexcitation deposition process
|
JP5040119B2
(ja)
*
|
2006-02-22 |
2012-10-03 |
東京エレクトロン株式会社 |
耐環境部材、半導体製造装置及び耐環境部材の製造方法
|
JP5028755B2
(ja)
*
|
2005-06-23 |
2012-09-19 |
東京エレクトロン株式会社 |
半導体処理装置の表面処理方法
|
US20070014919A1
(en)
*
|
2005-07-15 |
2007-01-18 |
Jani Hamalainen |
Atomic layer deposition of noble metal oxides
|
US20070020890A1
(en)
*
|
2005-07-19 |
2007-01-25 |
Applied Materials, Inc. |
Method and apparatus for semiconductor processing
|
US7927948B2
(en)
|
2005-07-20 |
2011-04-19 |
Micron Technology, Inc. |
Devices with nanocrystals and methods of formation
|
US7473637B2
(en)
|
2005-07-20 |
2009-01-06 |
Micron Technology, Inc. |
ALD formed titanium nitride films
|
JP4911345B2
(ja)
*
|
2005-07-25 |
2012-04-04 |
セイコーエプソン株式会社 |
パターニング方法、並びにこれを用いた電子装置の製造方法
|
WO2007024134A1
(en)
*
|
2005-08-26 |
2007-03-01 |
Fujifilm Manufacturing Europe B.V. |
Method and arrangement for generating and controlling a discharge plasma
|
US8110469B2
(en)
|
2005-08-30 |
2012-02-07 |
Micron Technology, Inc. |
Graded dielectric layers
|
US20070065578A1
(en)
*
|
2005-09-21 |
2007-03-22 |
Applied Materials, Inc. |
Treatment processes for a batch ALD reactor
|
US7547796B2
(en)
*
|
2005-09-29 |
2009-06-16 |
Praxair Technology, Inc. |
Organometallic compounds, processes for the preparation thereof and methods of use thereof
|
US20070082507A1
(en)
*
|
2005-10-06 |
2007-04-12 |
Applied Materials, Inc. |
Method and apparatus for the low temperature deposition of doped silicon nitride films
|
US8993055B2
(en)
|
2005-10-27 |
2015-03-31 |
Asm International N.V. |
Enhanced thin film deposition
|
US20070099422A1
(en)
*
|
2005-10-28 |
2007-05-03 |
Kapila Wijekoon |
Process for electroless copper deposition
|
WO2007142690A2
(en)
*
|
2005-11-04 |
2007-12-13 |
Applied Materials, Inc. |
Apparatus and process for plasma-enhanced atomic layer deposition
|
KR100660890B1
(ko)
*
|
2005-11-16 |
2006-12-26 |
삼성전자주식회사 |
Ald를 이용한 이산화실리콘막 형성 방법
|
US8357434B1
(en)
*
|
2005-12-13 |
2013-01-22 |
Lam Research Corporation |
Apparatus for the deposition of a conformal film on a substrate and methods therefor
|
US20070264427A1
(en)
*
|
2005-12-21 |
2007-11-15 |
Asm Japan K.K. |
Thin film formation by atomic layer growth and chemical vapor deposition
|
KR101379015B1
(ko)
|
2006-02-15 |
2014-03-28 |
한국에이에스엠지니텍 주식회사 |
플라즈마 원자층 증착법을 이용한 루테늄 막 증착 방법 및고밀도 루테늄 층
|
US7709402B2
(en)
*
|
2006-02-16 |
2010-05-04 |
Micron Technology, Inc. |
Conductive layers for hafnium silicon oxynitride films
|
US7964514B2
(en)
*
|
2006-03-02 |
2011-06-21 |
Applied Materials, Inc. |
Multiple nitrogen plasma treatments for thin SiON dielectrics
|
US7645710B2
(en)
|
2006-03-09 |
2010-01-12 |
Applied Materials, Inc. |
Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
|
US7837838B2
(en)
|
2006-03-09 |
2010-11-23 |
Applied Materials, Inc. |
Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
|
US7678710B2
(en)
|
2006-03-09 |
2010-03-16 |
Applied Materials, Inc. |
Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
|
KR101388817B1
(ko)
|
2006-03-14 |
2014-04-23 |
프랙스에어 테크놀로지, 인코포레이티드 |
증착 방법을 위한 온도 제어 콜드 트랩 및 그의 용도
|
US20070215036A1
(en)
*
|
2006-03-15 |
2007-09-20 |
Hyung-Sang Park |
Method and apparatus of time and space co-divided atomic layer deposition
|
US20070218702A1
(en)
*
|
2006-03-15 |
2007-09-20 |
Asm Japan K.K. |
Semiconductor-processing apparatus with rotating susceptor
|
US7959985B2
(en)
*
|
2006-03-20 |
2011-06-14 |
Tokyo Electron Limited |
Method of integrating PEALD Ta-containing films into Cu metallization
|
TW200805458A
(en)
*
|
2006-03-24 |
2008-01-16 |
Applied Materials Inc |
Carbon precursors for use during silicon epitaxial film formation
|
KR100708881B1
(ko)
*
|
2006-04-06 |
2007-04-18 |
서울시립대학교 산학협력단 |
실리콘 나노점 어레이 제조장치 및 그 제조방법과 이를이용한 다중 레벨 실리콘 비휘발성 메모리 제조방법
|
US7582161B2
(en)
*
|
2006-04-07 |
2009-09-01 |
Micron Technology, Inc. |
Atomic layer deposited titanium-doped indium oxide films
|
US7674337B2
(en)
*
|
2006-04-07 |
2010-03-09 |
Applied Materials, Inc. |
Gas manifolds for use during epitaxial film formation
|
US20070252299A1
(en)
*
|
2006-04-27 |
2007-11-01 |
Applied Materials, Inc. |
Synchronization of precursor pulsing and wafer rotation
|
US20070259111A1
(en)
*
|
2006-05-05 |
2007-11-08 |
Singh Kaushal K |
Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film
|
US7798096B2
(en)
*
|
2006-05-05 |
2010-09-21 |
Applied Materials, Inc. |
Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
|
US8323753B2
(en)
*
|
2006-05-30 |
2012-12-04 |
Fujifilm Manufacturing Europe B.V. |
Method for deposition using pulsed atmospheric pressure glow discharge
|
US20090324971A1
(en)
*
|
2006-06-16 |
2009-12-31 |
Fujifilm Manufacturing Europe B.V. |
Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma
|
US8318966B2
(en)
|
2006-06-23 |
2012-11-27 |
Praxair Technology, Inc. |
Organometallic compounds
|
US7501355B2
(en)
*
|
2006-06-29 |
2009-03-10 |
Applied Materials, Inc. |
Decreasing the etch rate of silicon nitride by carbon addition
|
WO2008005892A2
(en)
*
|
2006-06-30 |
2008-01-10 |
Applied Materials, Inc. |
Nanocrystal formation
|
US7956168B2
(en)
|
2006-07-06 |
2011-06-07 |
Praxair Technology, Inc. |
Organometallic compounds having sterically hindered amides
|
KR100791334B1
(ko)
*
|
2006-07-26 |
2008-01-07 |
삼성전자주식회사 |
원자층 증착법을 이용한 금속 산화막 형성 방법
|
US8187679B2
(en)
*
|
2006-07-29 |
2012-05-29 |
Lotus Applied Technology, Llc |
Radical-enhanced atomic layer deposition system and method
|
US8029620B2
(en)
*
|
2006-07-31 |
2011-10-04 |
Applied Materials, Inc. |
Methods of forming carbon-containing silicon epitaxial layers
|
DE112007001813T5
(de)
*
|
2006-07-31 |
2009-07-09 |
Applied Materials, Inc., Santa Clara |
Verfahren zum Steuern der Morphologie während der Bildung einer epitaktischen Schicht
|
US20080038486A1
(en)
*
|
2006-08-03 |
2008-02-14 |
Helmuth Treichel |
Radical Assisted Batch Film Deposition
|
US7959986B2
(en)
*
|
2006-08-09 |
2011-06-14 |
Praxair Technology, Inc. |
Organometallic compounds, processes for the preparation thereof and methods of use thereof
|
US7759747B2
(en)
*
|
2006-08-31 |
2010-07-20 |
Micron Technology, Inc. |
Tantalum aluminum oxynitride high-κ dielectric
|
US7435484B2
(en)
*
|
2006-09-01 |
2008-10-14 |
Asm Japan K.K. |
Ruthenium thin film-formed structure
|
KR20080027009A
(ko)
*
|
2006-09-22 |
2008-03-26 |
에이에스엠지니텍코리아 주식회사 |
원자층 증착 장치 및 그를 이용한 다층막 증착 방법
|
WO2008039845A2
(en)
|
2006-09-26 |
2008-04-03 |
Applied Materials, Inc. |
Fluorine plasma treatment of high-k gate stack for defect passivation
|
US7956207B2
(en)
*
|
2006-09-28 |
2011-06-07 |
Praxair Technology, Inc. |
Heteroleptic organometallic compounds
|
WO2008042981A2
(en)
*
|
2006-10-05 |
2008-04-10 |
Asm America, Inc. |
Ald of metal silicate films
|
US7521379B2
(en)
*
|
2006-10-09 |
2009-04-21 |
Applied Materials, Inc. |
Deposition and densification process for titanium nitride barrier layers
|
WO2008045423A1
(en)
*
|
2006-10-10 |
2008-04-17 |
Structured Materials Inc. |
Self assembled controlled luminescent transparent conductive photonic crystals for light emitting devices
|
US8268409B2
(en)
*
|
2006-10-25 |
2012-09-18 |
Asm America, Inc. |
Plasma-enhanced deposition of metal carbide films
|
US8092695B2
(en)
*
|
2006-10-30 |
2012-01-10 |
Applied Materials, Inc. |
Endpoint detection for photomask etching
|
US20080099436A1
(en)
*
|
2006-10-30 |
2008-05-01 |
Michael Grimbergen |
Endpoint detection for photomask etching
|
US7775508B2
(en)
*
|
2006-10-31 |
2010-08-17 |
Applied Materials, Inc. |
Ampoule for liquid draw and vapor draw with a continuous level sensor
|
US7611751B2
(en)
|
2006-11-01 |
2009-11-03 |
Asm America, Inc. |
Vapor deposition of metal carbide films
|
US20080124484A1
(en)
*
|
2006-11-08 |
2008-05-29 |
Asm Japan K.K. |
Method of forming ru film and metal wiring structure
|
US7897495B2
(en)
*
|
2006-12-12 |
2011-03-01 |
Applied Materials, Inc. |
Formation of epitaxial layer containing silicon and carbon
|
FR2909799A1
(fr)
*
|
2006-12-12 |
2008-06-13 |
Commissariat Energie Atomique |
Procede et fabrication d'elements de combustible nucleaire et contenant pour la mise en oeuvre d'un tel procede
|
US20080145536A1
(en)
*
|
2006-12-13 |
2008-06-19 |
Applied Materials, Inc. |
METHOD AND APPARATUS FOR LOW TEMPERATURE AND LOW K SiBN DEPOSITION
|
US7598170B2
(en)
*
|
2007-01-26 |
2009-10-06 |
Asm America, Inc. |
Plasma-enhanced ALD of tantalum nitride films
|
US7595270B2
(en)
*
|
2007-01-26 |
2009-09-29 |
Asm America, Inc. |
Passivated stoichiometric metal nitride films
|
US20080206987A1
(en)
*
|
2007-01-29 |
2008-08-28 |
Gelatos Avgerinos V |
Process for tungsten nitride deposition by a temperature controlled lid assembly
|
US9064960B2
(en)
*
|
2007-01-31 |
2015-06-23 |
Applied Materials, Inc. |
Selective epitaxy process control
|
US8043432B2
(en)
*
|
2007-02-12 |
2011-10-25 |
Tokyo Electron Limited |
Atomic layer deposition systems and methods
|
US8338307B2
(en)
*
|
2007-02-13 |
2012-12-25 |
Fujifilm Manufacturing Europe B.V. |
Substrate plasma treatment using magnetic mask device
|
US8025932B2
(en)
*
|
2007-02-21 |
2011-09-27 |
Colorado School Of Mines |
Self-limiting thin film synthesis achieved by pulsed plasma-enhanced chemical vapor deposition
|
US20080241387A1
(en)
*
|
2007-03-29 |
2008-10-02 |
Asm International N.V. |
Atomic layer deposition reactor
|
US20080241384A1
(en)
*
|
2007-04-02 |
2008-10-02 |
Asm Genitech Korea Ltd. |
Lateral flow deposition apparatus and method of depositing film by using the apparatus
|
US20080248648A1
(en)
*
|
2007-04-06 |
2008-10-09 |
Thompson David M |
Deposition precursors for semiconductor applications
|
US7713874B2
(en)
*
|
2007-05-02 |
2010-05-11 |
Asm America, Inc. |
Periodic plasma annealing in an ALD-type process
|
JP5364293B2
(ja)
*
|
2007-06-01 |
2013-12-11 |
株式会社半導体エネルギー研究所 |
表示装置の作製方法およびプラズマcvd装置
|
US7939932B2
(en)
*
|
2007-06-20 |
2011-05-10 |
Analog Devices, Inc. |
Packaged chip devices with atomic layer deposition protective films
|
US8017182B2
(en)
*
|
2007-06-21 |
2011-09-13 |
Asm International N.V. |
Method for depositing thin films by mixed pulsed CVD and ALD
|
US7638170B2
(en)
|
2007-06-21 |
2009-12-29 |
Asm International N.V. |
Low resistivity metal carbonitride thin film deposition by atomic layer deposition
|
US20090035946A1
(en)
*
|
2007-07-31 |
2009-02-05 |
Asm International N.V. |
In situ deposition of different metal-containing films using cyclopentadienyl metal precursors
|
US20090041952A1
(en)
*
|
2007-08-10 |
2009-02-12 |
Asm Genitech Korea Ltd. |
Method of depositing silicon oxide films
|
KR20090018290A
(ko)
*
|
2007-08-17 |
2009-02-20 |
에이에스엠지니텍코리아 주식회사 |
증착 장치
|
CN101790446B
(zh)
|
2007-08-27 |
2013-08-07 |
博里利斯技术有限公司 |
生产聚合物粒料的设备和方法
|
US20100255625A1
(en)
*
|
2007-09-07 |
2010-10-07 |
Fujifilm Manufacturing Europe B.V. |
Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma
|
US7678298B2
(en)
*
|
2007-09-25 |
2010-03-16 |
Applied Materials, Inc. |
Tantalum carbide nitride materials by vapor deposition processes
|
US7585762B2
(en)
*
|
2007-09-25 |
2009-09-08 |
Applied Materials, Inc. |
Vapor deposition processes for tantalum carbide nitride materials
|
US20090087550A1
(en)
*
|
2007-09-27 |
2009-04-02 |
Tokyo Electron Limited |
Sequential flow deposition of a tungsten silicide gate electrode film
|
US20090087339A1
(en)
*
|
2007-09-28 |
2009-04-02 |
Asm Japan K.K. |
METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR
|
US7824743B2
(en)
*
|
2007-09-28 |
2010-11-02 |
Applied Materials, Inc. |
Deposition processes for titanium nitride barrier and aluminum
|
US8080280B1
(en)
|
2007-10-16 |
2011-12-20 |
Sandia Corporation |
Nanostructure templating using low temperature atomic layer deposition
|
KR101544198B1
(ko)
|
2007-10-17 |
2015-08-12 |
한국에이에스엠지니텍 주식회사 |
루테늄 막 형성 방법
|
US8282735B2
(en)
*
|
2007-11-27 |
2012-10-09 |
Asm Genitech Korea Ltd. |
Atomic layer deposition apparatus
|
US7655564B2
(en)
*
|
2007-12-12 |
2010-02-02 |
Asm Japan, K.K. |
Method for forming Ta-Ru liner layer for Cu wiring
|
KR20090067505A
(ko)
*
|
2007-12-21 |
2009-06-25 |
에이에스엠지니텍코리아 주식회사 |
루테늄막 증착 방법
|
US7678715B2
(en)
|
2007-12-21 |
2010-03-16 |
Applied Materials, Inc. |
Low wet etch rate silicon nitride film
|
JP4935687B2
(ja)
*
|
2008-01-19 |
2012-05-23 |
東京エレクトロン株式会社 |
成膜方法及び成膜装置
|
US20090209777A1
(en)
*
|
2008-01-24 |
2009-08-20 |
Thompson David M |
Organometallic compounds, processes for the preparation thereof and methods of use thereof
|
US20090203928A1
(en)
*
|
2008-01-24 |
2009-08-13 |
Thompson David M |
Organometallic compounds, processes for the preparation thereof and methods of use thereof
|
US20090202740A1
(en)
*
|
2008-01-24 |
2009-08-13 |
Thompson David M |
Organometallic compounds, processes for the preparation thereof and methods of use thereof
|
US20090205538A1
(en)
*
|
2008-01-24 |
2009-08-20 |
Thompson David M |
Organometallic compounds, processes for the preparation thereof and methods of use thereof
|
US8702999B2
(en)
*
|
2008-02-01 |
2014-04-22 |
Fujifilm Manufacturing Europe B.V. |
Method and apparatus for plasma surface treatment of a moving substrate
|
ATE523067T1
(de)
*
|
2008-02-08 |
2011-09-15 |
Fujifilm Mfg Europe Bv |
Verfahren zur herstellung einer mehrschichtigen stapelstruktur mit verbesserter wvtr- grenzeigenschaft
|
US7799674B2
(en)
*
|
2008-02-19 |
2010-09-21 |
Asm Japan K.K. |
Ruthenium alloy film for copper interconnects
|
US20090214777A1
(en)
*
|
2008-02-22 |
2009-08-27 |
Demetrius Sarigiannis |
Multiple ampoule delivery systems
|
US8273178B2
(en)
*
|
2008-02-28 |
2012-09-25 |
Asm Genitech Korea Ltd. |
Thin film deposition apparatus and method of maintaining the same
|
FR2928662B1
(fr)
*
|
2008-03-11 |
2011-08-26 |
Arkema France |
Procede et systeme de depot d'un metal ou metalloide sur des nanotubes de carbone
|
JP2009231574A
(ja)
*
|
2008-03-24 |
2009-10-08 |
Sanken Electric Co Ltd |
SiC半導体素子とその製造方法並びにその製造装置
|
US8545936B2
(en)
|
2008-03-28 |
2013-10-01 |
Asm International N.V. |
Methods for forming carbon nanotubes
|
US7659158B2
(en)
|
2008-03-31 |
2010-02-09 |
Applied Materials, Inc. |
Atomic layer deposition processes for non-volatile memory devices
|
US20090255466A1
(en)
|
2008-04-11 |
2009-10-15 |
Peck John D |
Reagent dispensing apparatus and delivery method
|
US20090258143A1
(en)
|
2008-04-11 |
2009-10-15 |
Peck John D |
Reagent dispensing apparatus and delivery method
|
KR101540077B1
(ko)
|
2008-04-16 |
2015-07-28 |
에이에스엠 아메리카, 인코포레이티드 |
알루미늄 탄화수소 화합물들을 이용한 금속 카바이드 막들의 원자층 증착법
|
US8383525B2
(en)
*
|
2008-04-25 |
2013-02-26 |
Asm America, Inc. |
Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
|
US7666474B2
(en)
|
2008-05-07 |
2010-02-23 |
Asm America, Inc. |
Plasma-enhanced pulsed deposition of metal carbide films
|
KR101436564B1
(ko)
*
|
2008-05-07 |
2014-09-02 |
한국에이에스엠지니텍 주식회사 |
비정질 실리콘 박막 형성 방법
|
US8084104B2
(en)
*
|
2008-08-29 |
2011-12-27 |
Asm Japan K.K. |
Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
|
US20100062149A1
(en)
|
2008-09-08 |
2010-03-11 |
Applied Materials, Inc. |
Method for tuning a deposition rate during an atomic layer deposition process
|
US8491967B2
(en)
*
|
2008-09-08 |
2013-07-23 |
Applied Materials, Inc. |
In-situ chamber treatment and deposition process
|
US8133555B2
(en)
|
2008-10-14 |
2012-03-13 |
Asm Japan K.K. |
Method for forming metal film by ALD using beta-diketone metal complex
|
US8146896B2
(en)
*
|
2008-10-31 |
2012-04-03 |
Applied Materials, Inc. |
Chemical precursor ampoule for vapor deposition processes
|
US9328417B2
(en)
*
|
2008-11-01 |
2016-05-03 |
Ultratech, Inc. |
System and method for thin film deposition
|
US9175388B2
(en)
*
|
2008-11-01 |
2015-11-03 |
Ultratech, Inc. |
Reaction chamber with removable liner
|
WO2010056576A1
(en)
*
|
2008-11-11 |
2010-05-20 |
Praxair Technology, Inc. |
Reagent dispensing apparatuses and delivery methods
|
US10378106B2
(en)
|
2008-11-14 |
2019-08-13 |
Asm Ip Holding B.V. |
Method of forming insulation film by modified PEALD
|
KR20110100618A
(ko)
*
|
2008-12-05 |
2011-09-14 |
로터스 어플라이드 테크놀로지, 엘엘씨 |
향상된 장벽 층 특성을 갖는 얇은 막의 고속 증착
|
US9379011B2
(en)
|
2008-12-19 |
2016-06-28 |
Asm International N.V. |
Methods for depositing nickel films and for making nickel silicide and nickel germanide
|
US8557702B2
(en)
|
2009-02-02 |
2013-10-15 |
Asm America, Inc. |
Plasma-enhanced atomic layers deposition of conductive material over dielectric layers
|
CA2653581A1
(en)
*
|
2009-02-11 |
2010-08-11 |
Kenneth Scott Alexander Butcher |
Migration and plasma enhanced chemical vapour deposition
|
GB2467928A
(en)
*
|
2009-02-19 |
2010-08-25 |
Amit Kumar Roy |
Inorganic Fibre Coating by Atomic Layer Deposition
|
US9394608B2
(en)
|
2009-04-06 |
2016-07-19 |
Asm America, Inc. |
Semiconductor processing reactor and components thereof
|
US20100266765A1
(en)
*
|
2009-04-21 |
2010-10-21 |
White Carl L |
Method and apparatus for growing a thin film onto a substrate
|
US20110020546A1
(en)
*
|
2009-05-15 |
2011-01-27 |
Asm International N.V. |
Low Temperature ALD of Noble Metals
|
US8329569B2
(en)
*
|
2009-07-31 |
2012-12-11 |
Asm America, Inc. |
Deposition of ruthenium or ruthenium dioxide
|
US8802201B2
(en)
|
2009-08-14 |
2014-08-12 |
Asm America, Inc. |
Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
|
US8026157B2
(en)
*
|
2009-09-02 |
2011-09-27 |
Applied Materials, Inc. |
Gas mixing method realized by back diffusion in a PECVD system with showerhead
|
US8637123B2
(en)
*
|
2009-12-29 |
2014-01-28 |
Lotus Applied Technology, Llc |
Oxygen radical generation for radical-enhanced thin film deposition
|
US8241991B2
(en)
*
|
2010-03-05 |
2012-08-14 |
Asm Japan K.K. |
Method for forming interconnect structure having airgap
|
US9287113B2
(en)
|
2012-11-08 |
2016-03-15 |
Novellus Systems, Inc. |
Methods for depositing films on sensitive substrates
|
US8728956B2
(en)
|
2010-04-15 |
2014-05-20 |
Novellus Systems, Inc. |
Plasma activated conformal film deposition
|
US9997357B2
(en)
|
2010-04-15 |
2018-06-12 |
Lam Research Corporation |
Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
|
US9611544B2
(en)
|
2010-04-15 |
2017-04-04 |
Novellus Systems, Inc. |
Plasma activated conformal dielectric film deposition
|
US9076646B2
(en)
|
2010-04-15 |
2015-07-07 |
Lam Research Corporation |
Plasma enhanced atomic layer deposition with pulsed plasma exposure
|
US9257274B2
(en)
|
2010-04-15 |
2016-02-09 |
Lam Research Corporation |
Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
|
US8637411B2
(en)
|
2010-04-15 |
2014-01-28 |
Novellus Systems, Inc. |
Plasma activated conformal dielectric film deposition
|
US9390909B2
(en)
|
2013-11-07 |
2016-07-12 |
Novellus Systems, Inc. |
Soft landing nanolaminates for advanced patterning
|
US9892917B2
(en)
|
2010-04-15 |
2018-02-13 |
Lam Research Corporation |
Plasma assisted atomic layer deposition of multi-layer films for patterning applications
|
US9373500B2
(en)
|
2014-02-21 |
2016-06-21 |
Lam Research Corporation |
Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
|
US8956983B2
(en)
|
2010-04-15 |
2015-02-17 |
Novellus Systems, Inc. |
Conformal doping via plasma activated atomic layer deposition and conformal film deposition
|
TWI509695B
(zh)
|
2010-06-10 |
2015-11-21 |
Asm Int |
使膜選擇性沈積於基板上的方法
|
JP5541223B2
(ja)
*
|
2010-07-29 |
2014-07-09 |
東京エレクトロン株式会社 |
成膜方法及び成膜装置
|
US8524612B2
(en)
|
2010-09-23 |
2013-09-03 |
Novellus Systems, Inc. |
Plasma-activated deposition of conformal films
|
US9685320B2
(en)
|
2010-09-23 |
2017-06-20 |
Lam Research Corporation |
Methods for depositing silicon oxide
|
WO2012039833A2
(en)
*
|
2010-09-24 |
2012-03-29 |
Applied Materials, Inc. |
Low temperature silicon carbide deposition process
|
US8778204B2
(en)
|
2010-10-29 |
2014-07-15 |
Applied Materials, Inc. |
Methods for reducing photoresist interference when monitoring a target layer in a plasma process
|
US8143147B1
(en)
|
2011-02-10 |
2012-03-27 |
Intermolecular, Inc. |
Methods and systems for forming thin films
|
JP2012186375A
(ja)
*
|
2011-03-07 |
2012-09-27 |
Tokyo Electron Ltd |
プラズマ処理方法、膜形成方法、半導体デバイスの製造方法及びプラズマ処理装置
|
US8647993B2
(en)
|
2011-04-11 |
2014-02-11 |
Novellus Systems, Inc. |
Methods for UV-assisted conformal film deposition
|
US8871617B2
(en)
|
2011-04-22 |
2014-10-28 |
Asm Ip Holding B.V. |
Deposition and reduction of mixed metal oxide thin films
|
US9312155B2
(en)
|
2011-06-06 |
2016-04-12 |
Asm Japan K.K. |
High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
|
US9793148B2
(en)
|
2011-06-22 |
2017-10-17 |
Asm Japan K.K. |
Method for positioning wafers in multiple wafer transport
|
US10364496B2
(en)
|
2011-06-27 |
2019-07-30 |
Asm Ip Holding B.V. |
Dual section module having shared and unshared mass flow controllers
|
US10707082B2
(en)
*
|
2011-07-06 |
2020-07-07 |
Asm International N.V. |
Methods for depositing thin films comprising indium nitride by atomic layer deposition
|
US10854498B2
(en)
|
2011-07-15 |
2020-12-01 |
Asm Ip Holding B.V. |
Wafer-supporting device and method for producing same
|
US20130023129A1
(en)
|
2011-07-20 |
2013-01-24 |
Asm America, Inc. |
Pressure transmitter for a semiconductor processing environment
|
US20130022658A1
(en)
*
|
2011-07-23 |
2013-01-24 |
Synos Technology, Inc. |
Depositing material with antimicrobial properties on permeable substrate using atomic layer deposition
|
US8961804B2
(en)
|
2011-10-25 |
2015-02-24 |
Applied Materials, Inc. |
Etch rate detection for photomask etching
|
US9017481B1
(en)
|
2011-10-28 |
2015-04-28 |
Asm America, Inc. |
Process feed management for semiconductor substrate processing
|
US8808559B2
(en)
|
2011-11-22 |
2014-08-19 |
Applied Materials, Inc. |
Etch rate detection for reflective multi-material layers etching
|
US9112003B2
(en)
|
2011-12-09 |
2015-08-18 |
Asm International N.V. |
Selective formation of metallic films on metallic surfaces
|
US8900469B2
(en)
|
2011-12-19 |
2014-12-02 |
Applied Materials, Inc. |
Etch rate detection for anti-reflective coating layer and absorber layer etching
|
US8592328B2
(en)
|
2012-01-20 |
2013-11-26 |
Novellus Systems, Inc. |
Method for depositing a chlorine-free conformal sin film
|
US9238865B2
(en)
|
2012-02-06 |
2016-01-19 |
Asm Ip Holding B.V. |
Multiple vapor sources for vapor deposition
|
US8728955B2
(en)
|
2012-02-14 |
2014-05-20 |
Novellus Systems, Inc. |
Method of plasma activated deposition of a conformal film on a substrate surface
|
US8946830B2
(en)
|
2012-04-04 |
2015-02-03 |
Asm Ip Holdings B.V. |
Metal oxide protective layer for a semiconductor device
|
KR101881894B1
(ko)
*
|
2012-04-06 |
2018-07-26 |
삼성디스플레이 주식회사 |
박막 증착 장치 및 그것을 이용한 박막 증착 방법
|
US20130284203A1
(en)
*
|
2012-04-27 |
2013-10-31 |
Progressive Surface, Inc. |
Plasma spray apparatus integrating water cleaning
|
US10279365B2
(en)
|
2012-04-27 |
2019-05-07 |
Progressive Surface, Inc. |
Thermal spray method integrating selected removal of particulates
|
KR20140008751A
(ko)
*
|
2012-07-11 |
2014-01-22 |
김원구 |
알루미늄-실리콘 화합물의 증착방법 및 그 증착장치
|
US8784950B2
(en)
|
2012-07-16 |
2014-07-22 |
Asm Ip Holding B.V. |
Method for forming aluminum oxide film using Al compound containing alkyl group and alkoxy or alkylamine group
|
US9558931B2
(en)
|
2012-07-27 |
2017-01-31 |
Asm Ip Holding B.V. |
System and method for gas-phase sulfur passivation of a semiconductor surface
|
US8911826B2
(en)
*
|
2012-08-02 |
2014-12-16 |
Asm Ip Holding B.V. |
Method of parallel shift operation of multiple reactors
|
US9659799B2
(en)
|
2012-08-28 |
2017-05-23 |
Asm Ip Holding B.V. |
Systems and methods for dynamic semiconductor process scheduling
|
US9021985B2
(en)
|
2012-09-12 |
2015-05-05 |
Asm Ip Holdings B.V. |
Process gas management for an inductively-coupled plasma deposition reactor
|
US9324811B2
(en)
|
2012-09-26 |
2016-04-26 |
Asm Ip Holding B.V. |
Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
|
US9805939B2
(en)
|
2012-10-12 |
2017-10-31 |
Applied Materials, Inc. |
Dual endpoint detection for advanced phase shift and binary photomasks
|
US10714315B2
(en)
|
2012-10-12 |
2020-07-14 |
Asm Ip Holdings B.V. |
Semiconductor reaction chamber showerhead
|
KR102207992B1
(ko)
|
2012-10-23 |
2021-01-26 |
램 리써치 코포레이션 |
서브-포화된 원자층 증착 및 등각막 증착
|
US20140116336A1
(en)
*
|
2012-10-26 |
2014-05-01 |
Applied Materials, Inc. |
Substrate process chamber exhaust
|
SG2013083241A
(en)
|
2012-11-08 |
2014-06-27 |
Novellus Systems Inc |
Conformal film deposition for gapfill
|
US8778574B2
(en)
|
2012-11-30 |
2014-07-15 |
Applied Materials, Inc. |
Method for etching EUV material layers utilized to form a photomask
|
US9640416B2
(en)
|
2012-12-26 |
2017-05-02 |
Asm Ip Holding B.V. |
Single-and dual-chamber module-attachable wafer-handling chamber
|
US20140183051A1
(en)
*
|
2013-01-02 |
2014-07-03 |
International Business Machines Corporation |
Deposition of pure metals in 3d structures
|
US9018108B2
(en)
|
2013-01-25 |
2015-04-28 |
Applied Materials, Inc. |
Low shrinkage dielectric films
|
US20160376700A1
(en)
|
2013-02-01 |
2016-12-29 |
Asm Ip Holding B.V. |
System for treatment of deposition reactor
|
US9589770B2
(en)
|
2013-03-08 |
2017-03-07 |
Asm Ip Holding B.V. |
Method and systems for in-situ formation of intermediate reactive species
|
US9484191B2
(en)
|
2013-03-08 |
2016-11-01 |
Asm Ip Holding B.V. |
Pulsed remote plasma method and system
|
US9412602B2
(en)
|
2013-03-13 |
2016-08-09 |
Asm Ip Holding B.V. |
Deposition of smooth metal nitride films
|
US8841182B1
(en)
|
2013-03-14 |
2014-09-23 |
Asm Ip Holding B.V. |
Silane and borane treatments for titanium carbide films
|
US8846550B1
(en)
|
2013-03-14 |
2014-09-30 |
Asm Ip Holding B.V. |
Silane or borane treatment of metal thin films
|
WO2014204078A1
(ko)
*
|
2013-06-17 |
2014-12-24 |
주식회사 우리정도 |
관형 필터트랩을 갖는 고속 증착용 상온 화학증착장치 및 그 원격제어시스템과 그 증착방법
|
US8993054B2
(en)
|
2013-07-12 |
2015-03-31 |
Asm Ip Holding B.V. |
Method and system to reduce outgassing in a reaction chamber
|
US9018111B2
(en)
|
2013-07-22 |
2015-04-28 |
Asm Ip Holding B.V. |
Semiconductor reaction chamber with plasma capabilities
|
US9793115B2
(en)
|
2013-08-14 |
2017-10-17 |
Asm Ip Holding B.V. |
Structures and devices including germanium-tin films and methods of forming same
|
US9240412B2
(en)
|
2013-09-27 |
2016-01-19 |
Asm Ip Holding B.V. |
Semiconductor structure and device and methods of forming same using selective epitaxial process
|
US9556516B2
(en)
|
2013-10-09 |
2017-01-31 |
ASM IP Holding B.V |
Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
|
US10214817B2
(en)
|
2013-10-16 |
2019-02-26 |
The Board Of Trustees Of The University Of Illinois |
Multi-metal films, alternating film multilayers, formation methods and deposition system
|
US20150125628A1
(en)
*
|
2013-11-06 |
2015-05-07 |
Asm Ip Holding B.V. |
Method of depositing thin film
|
US10179947B2
(en)
|
2013-11-26 |
2019-01-15 |
Asm Ip Holding B.V. |
Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
|
TWI686499B
(zh)
|
2014-02-04 |
2020-03-01 |
荷蘭商Asm Ip控股公司 |
金屬、金屬氧化物與介電質的選擇性沉積
|
US9394609B2
(en)
|
2014-02-13 |
2016-07-19 |
Asm Ip Holding B.V. |
Atomic layer deposition of aluminum fluoride thin films
|
US9214334B2
(en)
|
2014-02-18 |
2015-12-15 |
Lam Research Corporation |
High growth rate process for conformal aluminum nitride
|
US10683571B2
(en)
|
2014-02-25 |
2020-06-16 |
Asm Ip Holding B.V. |
Gas supply manifold and method of supplying gases to chamber using same
|
US10167557B2
(en)
|
2014-03-18 |
2019-01-01 |
Asm Ip Holding B.V. |
Gas distribution system, reactor including the system, and methods of using the same
|
US9447498B2
(en)
|
2014-03-18 |
2016-09-20 |
Asm Ip Holding B.V. |
Method for performing uniform processing in gas system-sharing multiple reaction chambers
|
US11015245B2
(en)
|
2014-03-19 |
2021-05-25 |
Asm Ip Holding B.V. |
Gas-phase reactor and system having exhaust plenum and components thereof
|
KR20150109984A
(ko)
*
|
2014-03-21 |
2015-10-02 |
삼성전자주식회사 |
기체 차단 필름, 이를 포함하는 냉장고 및 기체 차단 필름의 제조방법
|
US10047435B2
(en)
|
2014-04-16 |
2018-08-14 |
Asm Ip Holding B.V. |
Dual selective deposition
|
US10643925B2
(en)
|
2014-04-17 |
2020-05-05 |
Asm Ip Holding B.V. |
Fluorine-containing conductive films
|
US9404587B2
(en)
|
2014-04-24 |
2016-08-02 |
ASM IP Holding B.V |
Lockout tagout for semiconductor vacuum valve
|
US10858737B2
(en)
|
2014-07-28 |
2020-12-08 |
Asm Ip Holding B.V. |
Showerhead assembly and components thereof
|
US9543180B2
(en)
|
2014-08-01 |
2017-01-10 |
Asm Ip Holding B.V. |
Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
|
US9478411B2
(en)
|
2014-08-20 |
2016-10-25 |
Lam Research Corporation |
Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS
|
US9478438B2
(en)
|
2014-08-20 |
2016-10-25 |
Lam Research Corporation |
Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
|
US9890456B2
(en)
|
2014-08-21 |
2018-02-13 |
Asm Ip Holding B.V. |
Method and system for in situ formation of gas-phase compounds
|
US9190266B1
(en)
|
2014-08-27 |
2015-11-17 |
The Regents Of The University Of California |
High capacitance density gate dielectrics for III-V semiconductor channels using a pre-disposition surface treatment involving plasma and TI precursor exposure
|
US9214333B1
(en)
|
2014-09-24 |
2015-12-15 |
Lam Research Corporation |
Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD
|
US10941490B2
(en)
|
2014-10-07 |
2021-03-09 |
Asm Ip Holding B.V. |
Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
|
US9657845B2
(en)
|
2014-10-07 |
2017-05-23 |
Asm Ip Holding B.V. |
Variable conductance gas distribution apparatus and method
|
US10002936B2
(en)
|
2014-10-23 |
2018-06-19 |
Asm Ip Holding B.V. |
Titanium aluminum and tantalum aluminum thin films
|
KR102300403B1
(ko)
|
2014-11-19 |
2021-09-09 |
에이에스엠 아이피 홀딩 비.브이. |
박막 증착 방법
|
US9564312B2
(en)
|
2014-11-24 |
2017-02-07 |
Lam Research Corporation |
Selective inhibition in atomic layer deposition of silicon-containing films
|
US9589790B2
(en)
|
2014-11-24 |
2017-03-07 |
Lam Research Corporation |
Method of depositing ammonia free and chlorine free conformal silicon nitride film
|
KR102263121B1
(ko)
|
2014-12-22 |
2021-06-09 |
에이에스엠 아이피 홀딩 비.브이. |
반도체 소자 및 그 제조 방법
|
US9478415B2
(en)
|
2015-02-13 |
2016-10-25 |
Asm Ip Holding B.V. |
Method for forming film having low resistance and shallow junction depth
|
US9490145B2
(en)
|
2015-02-23 |
2016-11-08 |
Asm Ip Holding B.V. |
Removal of surface passivation
|
US9646876B2
(en)
*
|
2015-02-27 |
2017-05-09 |
Applied Materials, Inc. |
Aluminum nitride barrier layer
|
US10529542B2
(en)
|
2015-03-11 |
2020-01-07 |
Asm Ip Holdings B.V. |
Cross-flow reactor and method
|
US10276355B2
(en)
|
2015-03-12 |
2019-04-30 |
Asm Ip Holding B.V. |
Multi-zone reactor, system including the reactor, and method of using the same
|
US10566187B2
(en)
|
2015-03-20 |
2020-02-18 |
Lam Research Corporation |
Ultrathin atomic layer deposition film accuracy thickness control
|
US9502238B2
(en)
|
2015-04-03 |
2016-11-22 |
Lam Research Corporation |
Deposition of conformal films by atomic layer deposition and atomic layer etch
|
US9941157B2
(en)
*
|
2015-06-26 |
2018-04-10 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Porogen bonded gap filling material in semiconductor manufacturing
|
US10458018B2
(en)
|
2015-06-26 |
2019-10-29 |
Asm Ip Holding B.V. |
Structures including metal carbide material, devices including the structures, and methods of forming same
|
US10600673B2
(en)
|
2015-07-07 |
2020-03-24 |
Asm Ip Holding B.V. |
Magnetic susceptor to baseplate seal
|
US10526701B2
(en)
|
2015-07-09 |
2020-01-07 |
Lam Research Corporation |
Multi-cycle ALD process for film uniformity and thickness profile modulation
|
US9899291B2
(en)
|
2015-07-13 |
2018-02-20 |
Asm Ip Holding B.V. |
Method for protecting layer by forming hydrocarbon-based extremely thin film
|
US10043661B2
(en)
|
2015-07-13 |
2018-08-07 |
Asm Ip Holding B.V. |
Method for protecting layer by forming hydrocarbon-based extremely thin film
|
US10083836B2
(en)
|
2015-07-24 |
2018-09-25 |
Asm Ip Holding B.V. |
Formation of boron-doped titanium metal films with high work function
|
US10428421B2
(en)
|
2015-08-03 |
2019-10-01 |
Asm Ip Holding B.V. |
Selective deposition on metal or metallic surfaces relative to dielectric surfaces
|
US10087525B2
(en)
|
2015-08-04 |
2018-10-02 |
Asm Ip Holding B.V. |
Variable gap hard stop design
|
US10121699B2
(en)
|
2015-08-05 |
2018-11-06 |
Asm Ip Holding B.V. |
Selective deposition of aluminum and nitrogen containing material
|
US10566185B2
(en)
|
2015-08-05 |
2020-02-18 |
Asm Ip Holding B.V. |
Selective deposition of aluminum and nitrogen containing material
|
US9647114B2
(en)
|
2015-08-14 |
2017-05-09 |
Asm Ip Holding B.V. |
Methods of forming highly p-type doped germanium tin films and structures and devices including the films
|
US9711345B2
(en)
|
2015-08-25 |
2017-07-18 |
Asm Ip Holding B.V. |
Method for forming aluminum nitride-based film by PEALD
|
US9601693B1
(en)
|
2015-09-24 |
2017-03-21 |
Lam Research Corporation |
Method for encapsulating a chalcogenide material
|
US9960072B2
(en)
|
2015-09-29 |
2018-05-01 |
Asm Ip Holding B.V. |
Variable adjustment for precise matching of multiple chamber cavity housings
|
US9607842B1
(en)
|
2015-10-02 |
2017-03-28 |
Asm Ip Holding B.V. |
Methods of forming metal silicides
|
US10343186B2
(en)
|
2015-10-09 |
2019-07-09 |
Asm Ip Holding B.V. |
Vapor phase deposition of organic films
|
US10695794B2
(en)
|
2015-10-09 |
2020-06-30 |
Asm Ip Holding B.V. |
Vapor phase deposition of organic films
|
US10814349B2
(en)
|
2015-10-09 |
2020-10-27 |
Asm Ip Holding B.V. |
Vapor phase deposition of organic films
|
US9909214B2
(en)
|
2015-10-15 |
2018-03-06 |
Asm Ip Holding B.V. |
Method for depositing dielectric film in trenches by PEALD
|
US9941425B2
(en)
|
2015-10-16 |
2018-04-10 |
Asm Ip Holdings B.V. |
Photoactive devices and materials
|
US10211308B2
(en)
|
2015-10-21 |
2019-02-19 |
Asm Ip Holding B.V. |
NbMC layers
|
US10322384B2
(en)
|
2015-11-09 |
2019-06-18 |
Asm Ip Holding B.V. |
Counter flow mixer for process chamber
|
US9455138B1
(en)
|
2015-11-10 |
2016-09-27 |
Asm Ip Holding B.V. |
Method for forming dielectric film in trenches by PEALD using H-containing gas
|
US9786492B2
(en)
|
2015-11-12 |
2017-10-10 |
Asm Ip Holding B.V. |
Formation of SiOCN thin films
|
US9786491B2
(en)
|
2015-11-12 |
2017-10-10 |
Asm Ip Holding B.V. |
Formation of SiOCN thin films
|
US10121655B2
(en)
|
2015-11-20 |
2018-11-06 |
Applied Materials, Inc. |
Lateral plasma/radical source
|
US9905420B2
(en)
|
2015-12-01 |
2018-02-27 |
Asm Ip Holding B.V. |
Methods of forming silicon germanium tin films and structures and devices including the films
|
US9607837B1
(en)
|
2015-12-21 |
2017-03-28 |
Asm Ip Holding B.V. |
Method for forming silicon oxide cap layer for solid state diffusion process
|
US9735024B2
(en)
|
2015-12-28 |
2017-08-15 |
Asm Ip Holding B.V. |
Method of atomic layer etching using functional group-containing fluorocarbon
|
US9627221B1
(en)
|
2015-12-28 |
2017-04-18 |
Asm Ip Holding B.V. |
Continuous process incorporating atomic layer etching
|
US11139308B2
(en)
|
2015-12-29 |
2021-10-05 |
Asm Ip Holding B.V. |
Atomic layer deposition of III-V compounds to form V-NAND devices
|
US10468251B2
(en)
|
2016-02-19 |
2019-11-05 |
Asm Ip Holding B.V. |
Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
|
US10529554B2
(en)
|
2016-02-19 |
2020-01-07 |
Asm Ip Holding B.V. |
Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
|
US9754779B1
(en)
|
2016-02-19 |
2017-09-05 |
Asm Ip Holding B.V. |
Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
|
US9981286B2
(en)
|
2016-03-08 |
2018-05-29 |
Asm Ip Holding B.V. |
Selective formation of metal silicides
|
US10501866B2
(en)
|
2016-03-09 |
2019-12-10 |
Asm Ip Holding B.V. |
Gas distribution apparatus for improved film uniformity in an epitaxial system
|
US10343920B2
(en)
|
2016-03-18 |
2019-07-09 |
Asm Ip Holding B.V. |
Aligned carbon nanotubes
|
US9892913B2
(en)
|
2016-03-24 |
2018-02-13 |
Asm Ip Holding B.V. |
Radial and thickness control via biased multi-port injection settings
|
US10551741B2
(en)
|
2016-04-18 |
2020-02-04 |
Asm Ip Holding B.V. |
Method of forming a directed self-assembled layer on a substrate
|
US10204782B2
(en)
|
2016-04-18 |
2019-02-12 |
Imec Vzw |
Combined anneal and selective deposition process
|
US10087522B2
(en)
|
2016-04-21 |
2018-10-02 |
Asm Ip Holding B.V. |
Deposition of metal borides
|
US10865475B2
(en)
|
2016-04-21 |
2020-12-15 |
Asm Ip Holding B.V. |
Deposition of metal borides and silicides
|
US10190213B2
(en)
|
2016-04-21 |
2019-01-29 |
Asm Ip Holding B.V. |
Deposition of metal borides
|
US10032628B2
(en)
|
2016-05-02 |
2018-07-24 |
Asm Ip Holding B.V. |
Source/drain performance through conformal solid state doping
|
US10367080B2
(en)
|
2016-05-02 |
2019-07-30 |
Asm Ip Holding B.V. |
Method of forming a germanium oxynitride film
|
US11081342B2
(en)
|
2016-05-05 |
2021-08-03 |
Asm Ip Holding B.V. |
Selective deposition using hydrophobic precursors
|
KR102378021B1
(ko)
|
2016-05-06 |
2022-03-23 |
에이에스엠 아이피 홀딩 비.브이. |
SiOC 박막의 형성
|
KR102592471B1
(ko)
|
2016-05-17 |
2023-10-20 |
에이에스엠 아이피 홀딩 비.브이. |
금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
|
US11453943B2
(en)
|
2016-05-25 |
2022-09-27 |
Asm Ip Holding B.V. |
Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
|
US10373820B2
(en)
|
2016-06-01 |
2019-08-06 |
Asm Ip Holding B.V. |
Deposition of organic films
|
US10453701B2
(en)
|
2016-06-01 |
2019-10-22 |
Asm Ip Holding B.V. |
Deposition of organic films
|
US9803277B1
(en)
|
2016-06-08 |
2017-10-31 |
Asm Ip Holding B.V. |
Reaction chamber passivation and selective deposition of metallic films
|
US10014212B2
(en)
|
2016-06-08 |
2018-07-03 |
Asm Ip Holding B.V. |
Selective deposition of metallic films
|
US10388509B2
(en)
|
2016-06-28 |
2019-08-20 |
Asm Ip Holding B.V. |
Formation of epitaxial layers via dislocation filtering
|
US9773643B1
(en)
|
2016-06-30 |
2017-09-26 |
Lam Research Corporation |
Apparatus and method for deposition and etch in gap fill
|
US10062563B2
(en)
|
2016-07-01 |
2018-08-28 |
Lam Research Corporation |
Selective atomic layer deposition with post-dose treatment
|
US9859151B1
(en)
|
2016-07-08 |
2018-01-02 |
Asm Ip Holding B.V. |
Selective film deposition method to form air gaps
|
US10612137B2
(en)
|
2016-07-08 |
2020-04-07 |
Asm Ip Holdings B.V. |
Organic reactants for atomic layer deposition
|
US9793135B1
(en)
|
2016-07-14 |
2017-10-17 |
ASM IP Holding B.V |
Method of cyclic dry etching using etchant film
|
US10714385B2
(en)
|
2016-07-19 |
2020-07-14 |
Asm Ip Holding B.V. |
Selective deposition of tungsten
|
KR102354490B1
(ko)
|
2016-07-27 |
2022-01-21 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 방법
|
KR102532607B1
(ko)
|
2016-07-28 |
2023-05-15 |
에이에스엠 아이피 홀딩 비.브이. |
기판 가공 장치 및 그 동작 방법
|
US10177025B2
(en)
|
2016-07-28 |
2019-01-08 |
Asm Ip Holding B.V. |
Method and apparatus for filling a gap
|
US9887082B1
(en)
|
2016-07-28 |
2018-02-06 |
Asm Ip Holding B.V. |
Method and apparatus for filling a gap
|
US9812320B1
(en)
|
2016-07-28 |
2017-11-07 |
Asm Ip Holding B.V. |
Method and apparatus for filling a gap
|
US10395919B2
(en)
|
2016-07-28 |
2019-08-27 |
Asm Ip Holding B.V. |
Method and apparatus for filling a gap
|
US10629435B2
(en)
|
2016-07-29 |
2020-04-21 |
Lam Research Corporation |
Doped ALD films for semiconductor patterning applications
|
US10074543B2
(en)
|
2016-08-31 |
2018-09-11 |
Lam Research Corporation |
High dry etch rate materials for semiconductor patterning applications
|
US10037884B2
(en)
|
2016-08-31 |
2018-07-31 |
Lam Research Corporation |
Selective atomic layer deposition for gapfill using sacrificial underlayer
|
US10090316B2
(en)
|
2016-09-01 |
2018-10-02 |
Asm Ip Holding B.V. |
3D stacked multilayer semiconductor memory using doped select transistor channel
|
US9865455B1
(en)
|
2016-09-07 |
2018-01-09 |
Lam Research Corporation |
Nitride film formed by plasma-enhanced and thermal atomic layer deposition process
|
US10410943B2
(en)
|
2016-10-13 |
2019-09-10 |
Asm Ip Holding B.V. |
Method for passivating a surface of a semiconductor and related systems
|
US10643826B2
(en)
|
2016-10-26 |
2020-05-05 |
Asm Ip Holdings B.V. |
Methods for thermally calibrating reaction chambers
|
US11532757B2
(en)
|
2016-10-27 |
2022-12-20 |
Asm Ip Holding B.V. |
Deposition of charge trapping layers
|
US10714350B2
(en)
|
2016-11-01 |
2020-07-14 |
ASM IP Holdings, B.V. |
Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
|
US10643904B2
(en)
|
2016-11-01 |
2020-05-05 |
Asm Ip Holdings B.V. |
Methods for forming a semiconductor device and related semiconductor device structures
|
US10229833B2
(en)
|
2016-11-01 |
2019-03-12 |
Asm Ip Holding B.V. |
Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
|
US10435790B2
(en)
|
2016-11-01 |
2019-10-08 |
Asm Ip Holding B.V. |
Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
|
US20180144973A1
(en)
*
|
2016-11-01 |
2018-05-24 |
Applied Materials, Inc. |
Electromigration Improvement Using Tungsten For Selective Cobalt Deposition On Copper Surfaces
|
FR3058162B1
(fr)
*
|
2016-11-02 |
2021-01-01 |
Commissariat Energie Atomique |
Procede de depot de films minces de chalcogenure
|
US10134757B2
(en)
|
2016-11-07 |
2018-11-20 |
Asm Ip Holding B.V. |
Method of processing a substrate and a device manufactured by using the method
|
US10832908B2
(en)
|
2016-11-11 |
2020-11-10 |
Lam Research Corporation |
Self-aligned multi-patterning process flow with ALD gapfill spacer mask
|
US10454029B2
(en)
|
2016-11-11 |
2019-10-22 |
Lam Research Corporation |
Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
|
US10134579B2
(en)
|
2016-11-14 |
2018-11-20 |
Lam Research Corporation |
Method for high modulus ALD SiO2 spacer
|
KR102546317B1
(ko)
|
2016-11-15 |
2023-06-21 |
에이에스엠 아이피 홀딩 비.브이. |
기체 공급 유닛 및 이를 포함하는 기판 처리 장치
|
US10340135B2
(en)
|
2016-11-28 |
2019-07-02 |
Asm Ip Holding B.V. |
Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
|
US11430656B2
(en)
|
2016-11-29 |
2022-08-30 |
Asm Ip Holding B.V. |
Deposition of oxide thin films
|
US10186420B2
(en)
|
2016-11-29 |
2019-01-22 |
Asm Ip Holding B.V. |
Formation of silicon-containing thin films
|
KR20180068582A
(ko)
|
2016-12-14 |
2018-06-22 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
US11447861B2
(en)
|
2016-12-15 |
2022-09-20 |
Asm Ip Holding B.V. |
Sequential infiltration synthesis apparatus and a method of forming a patterned structure
|
US9916980B1
(en)
|
2016-12-15 |
2018-03-13 |
Asm Ip Holding B.V. |
Method of forming a structure on a substrate
|
US11581186B2
(en)
|
2016-12-15 |
2023-02-14 |
Asm Ip Holding B.V. |
Sequential infiltration synthesis apparatus
|
KR20180070971A
(ko)
|
2016-12-19 |
2018-06-27 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
US10269558B2
(en)
|
2016-12-22 |
2019-04-23 |
Asm Ip Holding B.V. |
Method of forming a structure on a substrate
|
US10867788B2
(en)
|
2016-12-28 |
2020-12-15 |
Asm Ip Holding B.V. |
Method of forming a structure on a substrate
|
US11390950B2
(en)
|
2017-01-10 |
2022-07-19 |
Asm Ip Holding B.V. |
Reactor system and method to reduce residue buildup during a film deposition process
|
US10655221B2
(en)
|
2017-02-09 |
2020-05-19 |
Asm Ip Holding B.V. |
Method for depositing oxide film by thermal ALD and PEALD
|
JP7169072B2
(ja)
|
2017-02-14 |
2022-11-10 |
エーエスエム アイピー ホールディング ビー.ブイ. |
選択的パッシベーションおよび選択的堆積
|
US10468261B2
(en)
|
2017-02-15 |
2019-11-05 |
Asm Ip Holding B.V. |
Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
|
US10283353B2
(en)
|
2017-03-29 |
2019-05-07 |
Asm Ip Holding B.V. |
Method of reforming insulating film deposited on substrate with recess pattern
|
US10529563B2
(en)
|
2017-03-29 |
2020-01-07 |
Asm Ip Holdings B.V. |
Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
|
US10103040B1
(en)
|
2017-03-31 |
2018-10-16 |
Asm Ip Holding B.V. |
Apparatus and method for manufacturing a semiconductor device
|
USD830981S1
(en)
|
2017-04-07 |
2018-10-16 |
Asm Ip Holding B.V. |
Susceptor for semiconductor substrate processing apparatus
|
US10847529B2
(en)
|
2017-04-13 |
2020-11-24 |
Asm Ip Holding B.V. |
Substrate processing method and device manufactured by the same
|
KR102457289B1
(ko)
|
2017-04-25 |
2022-10-21 |
에이에스엠 아이피 홀딩 비.브이. |
박막 증착 방법 및 반도체 장치의 제조 방법
|
US10504901B2
(en)
|
2017-04-26 |
2019-12-10 |
Asm Ip Holding B.V. |
Substrate processing method and device manufactured using the same
|
US11501965B2
(en)
|
2017-05-05 |
2022-11-15 |
Asm Ip Holding B.V. |
Plasma enhanced deposition processes for controlled formation of metal oxide thin films
|
KR102627238B1
(ko)
|
2017-05-05 |
2024-01-19 |
에이에스엠 아이피 홀딩 비.브이. |
산소 함유 박막의 형성을 제어하기 위한 플라즈마 강화 증착 공정
|
US10892156B2
(en)
|
2017-05-08 |
2021-01-12 |
Asm Ip Holding B.V. |
Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
|
US10770286B2
(en)
|
2017-05-08 |
2020-09-08 |
Asm Ip Holdings B.V. |
Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
|
US10446393B2
(en)
|
2017-05-08 |
2019-10-15 |
Asm Ip Holding B.V. |
Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
|
CN110651064B
(zh)
|
2017-05-16 |
2022-08-16 |
Asm Ip 控股有限公司 |
电介质上氧化物的选择性peald
|
US10504742B2
(en)
|
2017-05-31 |
2019-12-10 |
Asm Ip Holding B.V. |
Method of atomic layer etching using hydrogen plasma
|
US10886123B2
(en)
|
2017-06-02 |
2021-01-05 |
Asm Ip Holding B.V. |
Methods for forming low temperature semiconductor layers and related semiconductor device structures
|
US12040200B2
(en)
|
2017-06-20 |
2024-07-16 |
Asm Ip Holding B.V. |
Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
|
US11306395B2
(en)
|
2017-06-28 |
2022-04-19 |
Asm Ip Holding B.V. |
Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
|
US10685834B2
(en)
|
2017-07-05 |
2020-06-16 |
Asm Ip Holdings B.V. |
Methods for forming a silicon germanium tin layer and related semiconductor device structures
|
US10900120B2
(en)
|
2017-07-14 |
2021-01-26 |
Asm Ip Holding B.V. |
Passivation against vapor deposition
|
KR20190009245A
(ko)
|
2017-07-18 |
2019-01-28 |
에이에스엠 아이피 홀딩 비.브이. |
반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
|
US11374112B2
(en)
|
2017-07-19 |
2022-06-28 |
Asm Ip Holding B.V. |
Method for depositing a group IV semiconductor and related semiconductor device structures
|
US10541333B2
(en)
|
2017-07-19 |
2020-01-21 |
Asm Ip Holding B.V. |
Method for depositing a group IV semiconductor and related semiconductor device structures
|
US11018002B2
(en)
|
2017-07-19 |
2021-05-25 |
Asm Ip Holding B.V. |
Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
|
US10312055B2
(en)
|
2017-07-26 |
2019-06-04 |
Asm Ip Holding B.V. |
Method of depositing film by PEALD using negative bias
|
US10590535B2
(en)
|
2017-07-26 |
2020-03-17 |
Asm Ip Holdings B.V. |
Chemical treatment, deposition and/or infiltration apparatus and method for using the same
|
US10605530B2
(en)
|
2017-07-26 |
2020-03-31 |
Asm Ip Holding B.V. |
Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
|
US10692741B2
(en)
|
2017-08-08 |
2020-06-23 |
Asm Ip Holdings B.V. |
Radiation shield
|
US10770336B2
(en)
|
2017-08-08 |
2020-09-08 |
Asm Ip Holding B.V. |
Substrate lift mechanism and reactor including same
|
US10249524B2
(en)
|
2017-08-09 |
2019-04-02 |
Asm Ip Holding B.V. |
Cassette holder assembly for a substrate cassette and holding member for use in such assembly
|
US11769682B2
(en)
|
2017-08-09 |
2023-09-26 |
Asm Ip Holding B.V. |
Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
|
US11139191B2
(en)
|
2017-08-09 |
2021-10-05 |
Asm Ip Holding B.V. |
Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
|
US10236177B1
(en)
|
2017-08-22 |
2019-03-19 |
ASM IP Holding B.V.. |
Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
|
USD900036S1
(en)
|
2017-08-24 |
2020-10-27 |
Asm Ip Holding B.V. |
Heater electrical connector and adapter
|
US11830730B2
(en)
|
2017-08-29 |
2023-11-28 |
Asm Ip Holding B.V. |
Layer forming method and apparatus
|
KR102491945B1
(ko)
|
2017-08-30 |
2023-01-26 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
US11056344B2
(en)
|
2017-08-30 |
2021-07-06 |
Asm Ip Holding B.V. |
Layer forming method
|
US11295980B2
(en)
|
2017-08-30 |
2022-04-05 |
Asm Ip Holding B.V. |
Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
|
KR102401446B1
(ko)
|
2017-08-31 |
2022-05-24 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
US10269559B2
(en)
|
2017-09-13 |
2019-04-23 |
Lam Research Corporation |
Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
|
US10607895B2
(en)
|
2017-09-18 |
2020-03-31 |
Asm Ip Holdings B.V. |
Method for forming a semiconductor device structure comprising a gate fill metal
|
KR102630301B1
(ko)
|
2017-09-21 |
2024-01-29 |
에이에스엠 아이피 홀딩 비.브이. |
침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
|
US10844484B2
(en)
|
2017-09-22 |
2020-11-24 |
Asm Ip Holding B.V. |
Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
|
US10658205B2
(en)
|
2017-09-28 |
2020-05-19 |
Asm Ip Holdings B.V. |
Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
|
US10403504B2
(en)
|
2017-10-05 |
2019-09-03 |
Asm Ip Holding B.V. |
Method for selectively depositing a metallic film on a substrate
|
US10319588B2
(en)
|
2017-10-10 |
2019-06-11 |
Asm Ip Holding B.V. |
Method for depositing a metal chalcogenide on a substrate by cyclical deposition
|
US10923344B2
(en)
|
2017-10-30 |
2021-02-16 |
Asm Ip Holding B.V. |
Methods for forming a semiconductor structure and related semiconductor structures
|
US10910262B2
(en)
|
2017-11-16 |
2021-02-02 |
Asm Ip Holding B.V. |
Method of selectively depositing a capping layer structure on a semiconductor device structure
|
KR102443047B1
(ko)
|
2017-11-16 |
2022-09-14 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치 방법 및 그에 의해 제조된 장치
|
US11022879B2
(en)
|
2017-11-24 |
2021-06-01 |
Asm Ip Holding B.V. |
Method of forming an enhanced unexposed photoresist layer
|
US11639811B2
(en)
|
2017-11-27 |
2023-05-02 |
Asm Ip Holding B.V. |
Apparatus including a clean mini environment
|
TWI779134B
(zh)
|
2017-11-27 |
2022-10-01 |
荷蘭商Asm智慧財產控股私人有限公司 |
用於儲存晶圓匣的儲存裝置及批爐總成
|
KR20190065962A
(ko)
|
2017-12-04 |
2019-06-12 |
에이에스엠 아이피 홀딩 비.브이. |
유전체와 금속 표면 상에 SiOC의 균일한 증착
|
US10290508B1
(en)
|
2017-12-05 |
2019-05-14 |
Asm Ip Holding B.V. |
Method for forming vertical spacers for spacer-defined patterning
|
US10872771B2
(en)
|
2018-01-16 |
2020-12-22 |
Asm Ip Holding B. V. |
Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
|
KR20200108016A
(ko)
|
2018-01-19 |
2020-09-16 |
에이에스엠 아이피 홀딩 비.브이. |
플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법
|
TW202325889A
(zh)
|
2018-01-19 |
2023-07-01 |
荷蘭商Asm 智慧財產控股公司 |
沈積方法
|
USD903477S1
(en)
|
2018-01-24 |
2020-12-01 |
Asm Ip Holdings B.V. |
Metal clamp
|
US11018047B2
(en)
|
2018-01-25 |
2021-05-25 |
Asm Ip Holding B.V. |
Hybrid lift pin
|
USD880437S1
(en)
|
2018-02-01 |
2020-04-07 |
Asm Ip Holding B.V. |
Gas supply plate for semiconductor manufacturing apparatus
|
US10535516B2
(en)
|
2018-02-01 |
2020-01-14 |
Asm Ip Holdings B.V. |
Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
|
US11081345B2
(en)
|
2018-02-06 |
2021-08-03 |
Asm Ip Holding B.V. |
Method of post-deposition treatment for silicon oxide film
|
CN111699278B
(zh)
|
2018-02-14 |
2023-05-16 |
Asm Ip私人控股有限公司 |
通过循环沉积工艺在衬底上沉积含钌膜的方法
|
US10896820B2
(en)
|
2018-02-14 |
2021-01-19 |
Asm Ip Holding B.V. |
Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
|
US10731249B2
(en)
|
2018-02-15 |
2020-08-04 |
Asm Ip Holding B.V. |
Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
|
KR102636427B1
(ko)
|
2018-02-20 |
2024-02-13 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 방법 및 장치
|
US10658181B2
(en)
|
2018-02-20 |
2020-05-19 |
Asm Ip Holding B.V. |
Method of spacer-defined direct patterning in semiconductor fabrication
|
US10975470B2
(en)
|
2018-02-23 |
2021-04-13 |
Asm Ip Holding B.V. |
Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
|
US11473195B2
(en)
|
2018-03-01 |
2022-10-18 |
Asm Ip Holding B.V. |
Semiconductor processing apparatus and a method for processing a substrate
|
CN112005343A
(zh)
|
2018-03-02 |
2020-11-27 |
朗姆研究公司 |
使用水解的选择性沉积
|
US11629406B2
(en)
|
2018-03-09 |
2023-04-18 |
Asm Ip Holding B.V. |
Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
|
US11114283B2
(en)
|
2018-03-16 |
2021-09-07 |
Asm Ip Holding B.V. |
Reactor, system including the reactor, and methods of manufacturing and using same
|
KR102646467B1
(ko)
|
2018-03-27 |
2024-03-11 |
에이에스엠 아이피 홀딩 비.브이. |
기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
|
US11088002B2
(en)
|
2018-03-29 |
2021-08-10 |
Asm Ip Holding B.V. |
Substrate rack and a substrate processing system and method
|
US11230766B2
(en)
|
2018-03-29 |
2022-01-25 |
Asm Ip Holding B.V. |
Substrate processing apparatus and method
|
US10510536B2
(en)
|
2018-03-29 |
2019-12-17 |
Asm Ip Holding B.V. |
Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
|
KR102501472B1
(ko)
|
2018-03-30 |
2023-02-20 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 방법
|
JP7146690B2
(ja)
|
2018-05-02 |
2022-10-04 |
エーエスエム アイピー ホールディング ビー.ブイ. |
堆積および除去を使用した選択的層形成
|
KR20190128558A
(ko)
|
2018-05-08 |
2019-11-18 |
에이에스엠 아이피 홀딩 비.브이. |
기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조
|
US12025484B2
(en)
|
2018-05-08 |
2024-07-02 |
Asm Ip Holding B.V. |
Thin film forming method
|
TWI816783B
(zh)
|
2018-05-11 |
2023-10-01 |
荷蘭商Asm 智慧財產控股公司 |
用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
|
KR102596988B1
(ko)
|
2018-05-28 |
2023-10-31 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 방법 및 그에 의해 제조된 장치
|
US11718913B2
(en)
|
2018-06-04 |
2023-08-08 |
Asm Ip Holding B.V. |
Gas distribution system and reactor system including same
|
US11270899B2
(en)
|
2018-06-04 |
2022-03-08 |
Asm Ip Holding B.V. |
Wafer handling chamber with moisture reduction
|
US11286562B2
(en)
|
2018-06-08 |
2022-03-29 |
Asm Ip Holding B.V. |
Gas-phase chemical reactor and method of using same
|
US10797133B2
(en)
|
2018-06-21 |
2020-10-06 |
Asm Ip Holding B.V. |
Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
|
KR102568797B1
(ko)
|
2018-06-21 |
2023-08-21 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 시스템
|
US11492703B2
(en)
|
2018-06-27 |
2022-11-08 |
Asm Ip Holding B.V. |
Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
|
CN112292477A
(zh)
|
2018-06-27 |
2021-01-29 |
Asm Ip私人控股有限公司 |
用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构
|
US10612136B2
(en)
|
2018-06-29 |
2020-04-07 |
ASM IP Holding, B.V. |
Temperature-controlled flange and reactor system including same
|
TWI751420B
(zh)
|
2018-06-29 |
2022-01-01 |
荷蘭商Asm知識產權私人控股有限公司 |
薄膜沉積方法
|
US10388513B1
(en)
|
2018-07-03 |
2019-08-20 |
Asm Ip Holding B.V. |
Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
|
US10755922B2
(en)
|
2018-07-03 |
2020-08-25 |
Asm Ip Holding B.V. |
Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
|
US10767789B2
(en)
|
2018-07-16 |
2020-09-08 |
Asm Ip Holding B.V. |
Diaphragm valves, valve components, and methods for forming valve components
|
US10483099B1
(en)
|
2018-07-26 |
2019-11-19 |
Asm Ip Holding B.V. |
Method for forming thermally stable organosilicon polymer film
|
JP7165529B2
(ja)
*
|
2018-07-27 |
2022-11-04 |
大陽日酸株式会社 |
フランジ締結構造及びこれを用いた気相成長装置
|
US11053591B2
(en)
|
2018-08-06 |
2021-07-06 |
Asm Ip Holding B.V. |
Multi-port gas injection system and reactor system including same
|
US10883175B2
(en)
|
2018-08-09 |
2021-01-05 |
Asm Ip Holding B.V. |
Vertical furnace for processing substrates and a liner for use therein
|
US10829852B2
(en)
|
2018-08-16 |
2020-11-10 |
Asm Ip Holding B.V. |
Gas distribution device for a wafer processing apparatus
|
US11430674B2
(en)
|
2018-08-22 |
2022-08-30 |
Asm Ip Holding B.V. |
Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
|
US11024523B2
(en)
|
2018-09-11 |
2021-06-01 |
Asm Ip Holding B.V. |
Substrate processing apparatus and method
|
KR20200030162A
(ko)
|
2018-09-11 |
2020-03-20 |
에이에스엠 아이피 홀딩 비.브이. |
박막 증착 방법
|
US11049751B2
(en)
|
2018-09-14 |
2021-06-29 |
Asm Ip Holding B.V. |
Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
|
CN110970344A
(zh)
|
2018-10-01 |
2020-04-07 |
Asm Ip控股有限公司 |
衬底保持设备、包含所述设备的系统及其使用方法
|
JP2020056104A
(ja)
|
2018-10-02 |
2020-04-09 |
エーエスエム アイピー ホールディング ビー.ブイ. |
選択的パッシベーションおよび選択的堆積
|
US11232963B2
(en)
|
2018-10-03 |
2022-01-25 |
Asm Ip Holding B.V. |
Substrate processing apparatus and method
|
KR102592699B1
(ko)
|
2018-10-08 |
2023-10-23 |
에이에스엠 아이피 홀딩 비.브이. |
기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
|
US10847365B2
(en)
|
2018-10-11 |
2020-11-24 |
Asm Ip Holding B.V. |
Method of forming conformal silicon carbide film by cyclic CVD
|
US10811256B2
(en)
|
2018-10-16 |
2020-10-20 |
Asm Ip Holding B.V. |
Method for etching a carbon-containing feature
|
KR102546322B1
(ko)
|
2018-10-19 |
2023-06-21 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치 및 기판 처리 방법
|
KR102605121B1
(ko)
|
2018-10-19 |
2023-11-23 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치 및 기판 처리 방법
|
USD948463S1
(en)
|
2018-10-24 |
2022-04-12 |
Asm Ip Holding B.V. |
Susceptor for semiconductor substrate supporting apparatus
|
US10381219B1
(en)
|
2018-10-25 |
2019-08-13 |
Asm Ip Holding B.V. |
Methods for forming a silicon nitride film
|
US11087997B2
(en)
|
2018-10-31 |
2021-08-10 |
Asm Ip Holding B.V. |
Substrate processing apparatus for processing substrates
|
US11769692B2
(en)
*
|
2018-10-31 |
2023-09-26 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
High breakdown voltage inter-metal dielectric layer
|
KR20200051105A
(ko)
|
2018-11-02 |
2020-05-13 |
에이에스엠 아이피 홀딩 비.브이. |
기판 지지 유닛 및 이를 포함하는 기판 처리 장치
|
US11572620B2
(en)
|
2018-11-06 |
2023-02-07 |
Asm Ip Holding B.V. |
Methods for selectively depositing an amorphous silicon film on a substrate
|
US11031242B2
(en)
|
2018-11-07 |
2021-06-08 |
Asm Ip Holding B.V. |
Methods for depositing a boron doped silicon germanium film
|
US10847366B2
(en)
|
2018-11-16 |
2020-11-24 |
Asm Ip Holding B.V. |
Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
|
US10818758B2
(en)
|
2018-11-16 |
2020-10-27 |
Asm Ip Holding B.V. |
Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
|
US10559458B1
(en)
|
2018-11-26 |
2020-02-11 |
Asm Ip Holding B.V. |
Method of forming oxynitride film
|
US12040199B2
(en)
|
2018-11-28 |
2024-07-16 |
Asm Ip Holding B.V. |
Substrate processing apparatus for processing substrates
|
US11217444B2
(en)
|
2018-11-30 |
2022-01-04 |
Asm Ip Holding B.V. |
Method for forming an ultraviolet radiation responsive metal oxide-containing film
|
KR102636428B1
(ko)
|
2018-12-04 |
2024-02-13 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치를 세정하는 방법
|
US11158513B2
(en)
|
2018-12-13 |
2021-10-26 |
Asm Ip Holding B.V. |
Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
|
TW202037745A
(zh)
|
2018-12-14 |
2020-10-16 |
荷蘭商Asm Ip私人控股有限公司 |
形成裝置結構之方法、其所形成之結構及施行其之系統
|
TW202405220A
(zh)
|
2019-01-17 |
2024-02-01 |
荷蘭商Asm Ip 私人控股有限公司 |
藉由循環沈積製程於基板上形成含過渡金屬膜之方法
|
KR20200091543A
(ko)
|
2019-01-22 |
2020-07-31 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
CN111524788B
(zh)
|
2019-02-01 |
2023-11-24 |
Asm Ip私人控股有限公司 |
氧化硅的拓扑选择性膜形成的方法
|
JP7509548B2
(ja)
|
2019-02-20 |
2024-07-02 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
基材表面内に形成された凹部を充填するための周期的堆積方法および装置
|
TWI838458B
(zh)
|
2019-02-20 |
2024-04-11 |
荷蘭商Asm Ip私人控股有限公司 |
用於3d nand應用中之插塞填充沉積之設備及方法
|
TW202044325A
(zh)
|
2019-02-20 |
2020-12-01 |
荷蘭商Asm Ip私人控股有限公司 |
填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備
|
KR102626263B1
(ko)
|
2019-02-20 |
2024-01-16 |
에이에스엠 아이피 홀딩 비.브이. |
처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
|
JP2020133004A
(ja)
|
2019-02-22 |
2020-08-31 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
基材を処理するための基材処理装置および方法
|
KR20200108242A
(ko)
|
2019-03-08 |
2020-09-17 |
에이에스엠 아이피 홀딩 비.브이. |
실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
|
KR20200108243A
(ko)
|
2019-03-08 |
2020-09-17 |
에이에스엠 아이피 홀딩 비.브이. |
SiOC 층을 포함한 구조체 및 이의 형성 방법
|
KR20200108248A
(ko)
|
2019-03-08 |
2020-09-17 |
에이에스엠 아이피 홀딩 비.브이. |
SiOCN 층을 포함한 구조체 및 이의 형성 방법
|
KR20200116033A
(ko)
|
2019-03-28 |
2020-10-08 |
에이에스엠 아이피 홀딩 비.브이. |
도어 개방기 및 이를 구비한 기판 처리 장치
|
KR20200116855A
(ko)
|
2019-04-01 |
2020-10-13 |
에이에스엠 아이피 홀딩 비.브이. |
반도체 소자를 제조하는 방법
|
US11965238B2
(en)
|
2019-04-12 |
2024-04-23 |
Asm Ip Holding B.V. |
Selective deposition of metal oxides on metal surfaces
|
US11447864B2
(en)
|
2019-04-19 |
2022-09-20 |
Asm Ip Holding B.V. |
Layer forming method and apparatus
|
KR20200125453A
(ko)
|
2019-04-24 |
2020-11-04 |
에이에스엠 아이피 홀딩 비.브이. |
기상 반응기 시스템 및 이를 사용하는 방법
|
US12040181B2
(en)
|
2019-05-01 |
2024-07-16 |
Lam Research Corporation |
Modulated atomic layer deposition
|
KR20200130118A
(ko)
|
2019-05-07 |
2020-11-18 |
에이에스엠 아이피 홀딩 비.브이. |
비정질 탄소 중합체 막을 개질하는 방법
|
KR20200130121A
(ko)
|
2019-05-07 |
2020-11-18 |
에이에스엠 아이피 홀딩 비.브이. |
딥 튜브가 있는 화학물질 공급원 용기
|
KR20200130652A
(ko)
|
2019-05-10 |
2020-11-19 |
에이에스엠 아이피 홀딩 비.브이. |
표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
|
JP2020188254A
(ja)
|
2019-05-16 |
2020-11-19 |
エーエスエム アイピー ホールディング ビー.ブイ. |
ウェハボートハンドリング装置、縦型バッチ炉および方法
|
JP2020188255A
(ja)
|
2019-05-16 |
2020-11-19 |
エーエスエム アイピー ホールディング ビー.ブイ. |
ウェハボートハンドリング装置、縦型バッチ炉および方法
|
USD947913S1
(en)
|
2019-05-17 |
2022-04-05 |
Asm Ip Holding B.V. |
Susceptor shaft
|
USD975665S1
(en)
|
2019-05-17 |
2023-01-17 |
Asm Ip Holding B.V. |
Susceptor shaft
|
USD935572S1
(en)
|
2019-05-24 |
2021-11-09 |
Asm Ip Holding B.V. |
Gas channel plate
|
USD922229S1
(en)
|
2019-06-05 |
2021-06-15 |
Asm Ip Holding B.V. |
Device for controlling a temperature of a gas supply unit
|
KR20200141002A
(ko)
|
2019-06-06 |
2020-12-17 |
에이에스엠 아이피 홀딩 비.브이. |
배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법
|
KR20200143254A
(ko)
|
2019-06-11 |
2020-12-23 |
에이에스엠 아이피 홀딩 비.브이. |
개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
|
USD944946S1
(en)
|
2019-06-14 |
2022-03-01 |
Asm Ip Holding B.V. |
Shower plate
|
USD931978S1
(en)
|
2019-06-27 |
2021-09-28 |
Asm Ip Holding B.V. |
Showerhead vacuum transport
|
KR20210005515A
(ko)
|
2019-07-03 |
2021-01-14 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
|
US11788190B2
(en)
|
2019-07-05 |
2023-10-17 |
Asm Ip Holding B.V. |
Liquid vaporizer
|
JP7499079B2
(ja)
|
2019-07-09 |
2024-06-13 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
同軸導波管を用いたプラズマ装置、基板処理方法
|
CN112216646A
(zh)
|
2019-07-10 |
2021-01-12 |
Asm Ip私人控股有限公司 |
基板支撑组件及包括其的基板处理装置
|
KR20210010307A
(ko)
|
2019-07-16 |
2021-01-27 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
KR20210010816A
(ko)
|
2019-07-17 |
2021-01-28 |
에이에스엠 아이피 홀딩 비.브이. |
라디칼 보조 점화 플라즈마 시스템 및 방법
|
KR20210010820A
(ko)
|
2019-07-17 |
2021-01-28 |
에이에스엠 아이피 홀딩 비.브이. |
실리콘 게르마늄 구조를 형성하는 방법
|
US11643724B2
(en)
|
2019-07-18 |
2023-05-09 |
Asm Ip Holding B.V. |
Method of forming structures using a neutral beam
|
TWI839544B
(zh)
|
2019-07-19 |
2024-04-21 |
荷蘭商Asm Ip私人控股有限公司 |
形成形貌受控的非晶碳聚合物膜之方法
|
TW202113936A
(zh)
|
2019-07-29 |
2021-04-01 |
荷蘭商Asm Ip私人控股有限公司 |
用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法
|
CN112309900A
(zh)
|
2019-07-30 |
2021-02-02 |
Asm Ip私人控股有限公司 |
基板处理设备
|
CN112309899A
(zh)
|
2019-07-30 |
2021-02-02 |
Asm Ip私人控股有限公司 |
基板处理设备
|
US11587815B2
(en)
|
2019-07-31 |
2023-02-21 |
Asm Ip Holding B.V. |
Vertical batch furnace assembly
|
US11587814B2
(en)
|
2019-07-31 |
2023-02-21 |
Asm Ip Holding B.V. |
Vertical batch furnace assembly
|
US11227782B2
(en)
|
2019-07-31 |
2022-01-18 |
Asm Ip Holding B.V. |
Vertical batch furnace assembly
|
KR20210018759A
(ko)
|
2019-08-05 |
2021-02-18 |
에이에스엠 아이피 홀딩 비.브이. |
화학물질 공급원 용기를 위한 액체 레벨 센서
|
USD965044S1
(en)
|
2019-08-19 |
2022-09-27 |
Asm Ip Holding B.V. |
Susceptor shaft
|
USD965524S1
(en)
|
2019-08-19 |
2022-10-04 |
Asm Ip Holding B.V. |
Susceptor support
|
JP2021031769A
(ja)
|
2019-08-21 |
2021-03-01 |
エーエスエム アイピー ホールディング ビー.ブイ. |
成膜原料混合ガス生成装置及び成膜装置
|
USD940837S1
(en)
|
2019-08-22 |
2022-01-11 |
Asm Ip Holding B.V. |
Electrode
|
USD930782S1
(en)
|
2019-08-22 |
2021-09-14 |
Asm Ip Holding B.V. |
Gas distributor
|
USD949319S1
(en)
|
2019-08-22 |
2022-04-19 |
Asm Ip Holding B.V. |
Exhaust duct
|
KR20210024423A
(ko)
|
2019-08-22 |
2021-03-05 |
에이에스엠 아이피 홀딩 비.브이. |
홀을 구비한 구조체를 형성하기 위한 방법
|
USD979506S1
(en)
|
2019-08-22 |
2023-02-28 |
Asm Ip Holding B.V. |
Insulator
|
KR20210024420A
(ko)
|
2019-08-23 |
2021-03-05 |
에이에스엠 아이피 홀딩 비.브이. |
비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
|
US11286558B2
(en)
|
2019-08-23 |
2022-03-29 |
Asm Ip Holding B.V. |
Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
|
KR20210029090A
(ko)
|
2019-09-04 |
2021-03-15 |
에이에스엠 아이피 홀딩 비.브이. |
희생 캡핑 층을 이용한 선택적 증착 방법
|
KR20210029663A
(ko)
|
2019-09-05 |
2021-03-16 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
US11946136B2
(en)
|
2019-09-20 |
2024-04-02 |
Asm Ip Holding B.V. |
Semiconductor processing device
|
US11562901B2
(en)
|
2019-09-25 |
2023-01-24 |
Asm Ip Holding B.V. |
Substrate processing method
|
CN112593212B
(zh)
|
2019-10-02 |
2023-12-22 |
Asm Ip私人控股有限公司 |
通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
|
CN112635282A
(zh)
|
2019-10-08 |
2021-04-09 |
Asm Ip私人控股有限公司 |
具有连接板的基板处理装置、基板处理方法
|
KR20210042810A
(ko)
|
2019-10-08 |
2021-04-20 |
에이에스엠 아이피 홀딩 비.브이. |
활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
|
KR20210043460A
(ko)
|
2019-10-10 |
2021-04-21 |
에이에스엠 아이피 홀딩 비.브이. |
포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
|
US12009241B2
(en)
|
2019-10-14 |
2024-06-11 |
Asm Ip Holding B.V. |
Vertical batch furnace assembly with detector to detect cassette
|
TWI834919B
(zh)
|
2019-10-16 |
2024-03-11 |
荷蘭商Asm Ip私人控股有限公司 |
氧化矽之拓撲選擇性膜形成之方法
|
US11637014B2
(en)
|
2019-10-17 |
2023-04-25 |
Asm Ip Holding B.V. |
Methods for selective deposition of doped semiconductor material
|
KR20210047808A
(ko)
|
2019-10-21 |
2021-04-30 |
에이에스엠 아이피 홀딩 비.브이. |
막을 선택적으로 에칭하기 위한 장치 및 방법
|
KR20210050453A
(ko)
|
2019-10-25 |
2021-05-07 |
에이에스엠 아이피 홀딩 비.브이. |
기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
|
US11646205B2
(en)
|
2019-10-29 |
2023-05-09 |
Asm Ip Holding B.V. |
Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
|
US11139163B2
(en)
|
2019-10-31 |
2021-10-05 |
Asm Ip Holding B.V. |
Selective deposition of SiOC thin films
|
KR20210054983A
(ko)
|
2019-11-05 |
2021-05-14 |
에이에스엠 아이피 홀딩 비.브이. |
도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
|
US11501968B2
(en)
|
2019-11-15 |
2022-11-15 |
Asm Ip Holding B.V. |
Method for providing a semiconductor device with silicon filled gaps
|
KR20210062561A
(ko)
|
2019-11-20 |
2021-05-31 |
에이에스엠 아이피 홀딩 비.브이. |
기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
|
KR20210065848A
(ko)
|
2019-11-26 |
2021-06-04 |
에이에스엠 아이피 홀딩 비.브이. |
제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
|
CN112951697A
(zh)
|
2019-11-26 |
2021-06-11 |
Asm Ip私人控股有限公司 |
基板处理设备
|
CN112885692A
(zh)
|
2019-11-29 |
2021-06-01 |
Asm Ip私人控股有限公司 |
基板处理设备
|
CN112885693A
(zh)
|
2019-11-29 |
2021-06-01 |
Asm Ip私人控股有限公司 |
基板处理设备
|
JP2021090042A
(ja)
|
2019-12-02 |
2021-06-10 |
エーエスエム アイピー ホールディング ビー.ブイ. |
基板処理装置、基板処理方法
|
KR20210070898A
(ko)
|
2019-12-04 |
2021-06-15 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
TW202125596A
(zh)
|
2019-12-17 |
2021-07-01 |
荷蘭商Asm Ip私人控股有限公司 |
形成氮化釩層之方法以及包括該氮化釩層之結構
|
KR20210080214A
(ko)
|
2019-12-19 |
2021-06-30 |
에이에스엠 아이피 홀딩 비.브이. |
기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
|
TW202142733A
(zh)
|
2020-01-06 |
2021-11-16 |
荷蘭商Asm Ip私人控股有限公司 |
反應器系統、抬升銷、及處理方法
|
TW202140135A
(zh)
|
2020-01-06 |
2021-11-01 |
荷蘭商Asm Ip私人控股有限公司 |
氣體供應總成以及閥板總成
|
US11993847B2
(en)
|
2020-01-08 |
2024-05-28 |
Asm Ip Holding B.V. |
Injector
|
KR102675856B1
(ko)
|
2020-01-20 |
2024-06-17 |
에이에스엠 아이피 홀딩 비.브이. |
박막 형성 방법 및 박막 표면 개질 방법
|
TW202130846A
(zh)
|
2020-02-03 |
2021-08-16 |
荷蘭商Asm Ip私人控股有限公司 |
形成包括釩或銦層的結構之方法
|
KR20210100010A
(ko)
|
2020-02-04 |
2021-08-13 |
에이에스엠 아이피 홀딩 비.브이. |
대형 물품의 투과율 측정을 위한 방법 및 장치
|
US11776846B2
(en)
|
2020-02-07 |
2023-10-03 |
Asm Ip Holding B.V. |
Methods for depositing gap filling fluids and related systems and devices
|
TW202146715A
(zh)
|
2020-02-17 |
2021-12-16 |
荷蘭商Asm Ip私人控股有限公司 |
用於生長磷摻雜矽層之方法及其系統
|
TW202203344A
(zh)
|
2020-02-28 |
2022-01-16 |
荷蘭商Asm Ip控股公司 |
專用於零件清潔的系統
|
KR20210116240A
(ko)
|
2020-03-11 |
2021-09-27 |
에이에스엠 아이피 홀딩 비.브이. |
조절성 접합부를 갖는 기판 핸들링 장치
|
KR20210116249A
(ko)
|
2020-03-11 |
2021-09-27 |
에이에스엠 아이피 홀딩 비.브이. |
록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
|
CN113394086A
(zh)
|
2020-03-12 |
2021-09-14 |
Asm Ip私人控股有限公司 |
用于制造具有目标拓扑轮廓的层结构的方法
|
TW202140833A
(zh)
|
2020-03-30 |
2021-11-01 |
荷蘭商Asm Ip私人控股有限公司 |
相對於金屬表面在介電表面上之氧化矽的選擇性沉積
|
TW202140832A
(zh)
|
2020-03-30 |
2021-11-01 |
荷蘭商Asm Ip私人控股有限公司 |
氧化矽在金屬表面上之選擇性沉積
|
TW202204658A
(zh)
|
2020-03-30 |
2022-02-01 |
荷蘭商Asm Ip私人控股有限公司 |
在兩不同表面上同時選擇性沉積兩不同材料
|
KR20210124042A
(ko)
|
2020-04-02 |
2021-10-14 |
에이에스엠 아이피 홀딩 비.브이. |
박막 형성 방법
|
TW202146689A
(zh)
|
2020-04-03 |
2021-12-16 |
荷蘭商Asm Ip控股公司 |
阻障層形成方法及半導體裝置的製造方法
|
TW202145344A
(zh)
|
2020-04-08 |
2021-12-01 |
荷蘭商Asm Ip私人控股有限公司 |
用於選擇性蝕刻氧化矽膜之設備及方法
|
US11821078B2
(en)
|
2020-04-15 |
2023-11-21 |
Asm Ip Holding B.V. |
Method for forming precoat film and method for forming silicon-containing film
|
US11996289B2
(en)
|
2020-04-16 |
2024-05-28 |
Asm Ip Holding B.V. |
Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
|
TW202140831A
(zh)
|
2020-04-24 |
2021-11-01 |
荷蘭商Asm Ip私人控股有限公司 |
形成含氮化釩層及包含該層的結構之方法
|
KR20210132600A
(ko)
|
2020-04-24 |
2021-11-04 |
에이에스엠 아이피 홀딩 비.브이. |
바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
|
KR20210132605A
(ko)
|
2020-04-24 |
2021-11-04 |
에이에스엠 아이피 홀딩 비.브이. |
냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리
|
KR20210134226A
(ko)
|
2020-04-29 |
2021-11-09 |
에이에스엠 아이피 홀딩 비.브이. |
고체 소스 전구체 용기
|
KR20210134869A
(ko)
|
2020-05-01 |
2021-11-11 |
에이에스엠 아이피 홀딩 비.브이. |
Foup 핸들러를 이용한 foup의 빠른 교환
|
KR20210141379A
(ko)
|
2020-05-13 |
2021-11-23 |
에이에스엠 아이피 홀딩 비.브이. |
반응기 시스템용 레이저 정렬 고정구
|
TW202147383A
(zh)
|
2020-05-19 |
2021-12-16 |
荷蘭商Asm Ip私人控股有限公司 |
基材處理設備
|
KR20210145078A
(ko)
|
2020-05-21 |
2021-12-01 |
에이에스엠 아이피 홀딩 비.브이. |
다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
|
TW202200837A
(zh)
|
2020-05-22 |
2022-01-01 |
荷蘭商Asm Ip私人控股有限公司 |
用於在基材上形成薄膜之反應系統
|
TW202201602A
(zh)
|
2020-05-29 |
2022-01-01 |
荷蘭商Asm Ip私人控股有限公司 |
基板處理方法
|
TW202218133A
(zh)
|
2020-06-24 |
2022-05-01 |
荷蘭商Asm Ip私人控股有限公司 |
形成含矽層之方法
|
TW202217953A
(zh)
|
2020-06-30 |
2022-05-01 |
荷蘭商Asm Ip私人控股有限公司 |
基板處理方法
|
TW202202649A
(zh)
|
2020-07-08 |
2022-01-16 |
荷蘭商Asm Ip私人控股有限公司 |
基板處理方法
|
KR20220010438A
(ko)
|
2020-07-17 |
2022-01-25 |
에이에스엠 아이피 홀딩 비.브이. |
포토리소그래피에 사용하기 위한 구조체 및 방법
|
TW202204662A
(zh)
|
2020-07-20 |
2022-02-01 |
荷蘭商Asm Ip私人控股有限公司 |
用於沉積鉬層之方法及系統
|
US12040177B2
(en)
|
2020-08-18 |
2024-07-16 |
Asm Ip Holding B.V. |
Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
|
US11725280B2
(en)
|
2020-08-26 |
2023-08-15 |
Asm Ip Holding B.V. |
Method for forming metal silicon oxide and metal silicon oxynitride layers
|
USD990534S1
(en)
|
2020-09-11 |
2023-06-27 |
Asm Ip Holding B.V. |
Weighted lift pin
|
USD1012873S1
(en)
|
2020-09-24 |
2024-01-30 |
Asm Ip Holding B.V. |
Electrode for semiconductor processing apparatus
|
US12009224B2
(en)
|
2020-09-29 |
2024-06-11 |
Asm Ip Holding B.V. |
Apparatus and method for etching metal nitrides
|
TW202229613A
(zh)
|
2020-10-14 |
2022-08-01 |
荷蘭商Asm Ip私人控股有限公司 |
於階梯式結構上沉積材料的方法
|
KR20220053482A
(ko)
|
2020-10-22 |
2022-04-29 |
에이에스엠 아이피 홀딩 비.브이. |
바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
|
TW202223136A
(zh)
|
2020-10-28 |
2022-06-16 |
荷蘭商Asm Ip私人控股有限公司 |
用於在基板上形成層之方法、及半導體處理系統
|
TW202235649A
(zh)
|
2020-11-24 |
2022-09-16 |
荷蘭商Asm Ip私人控股有限公司 |
填充間隙之方法與相關之系統及裝置
|
TW202235675A
(zh)
|
2020-11-30 |
2022-09-16 |
荷蘭商Asm Ip私人控股有限公司 |
注入器、及基板處理設備
|
CN114639631A
(zh)
|
2020-12-16 |
2022-06-17 |
Asm Ip私人控股有限公司 |
跳动和摆动测量固定装置
|
TW202231903A
(zh)
|
2020-12-22 |
2022-08-16 |
荷蘭商Asm Ip私人控股有限公司 |
過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
|
USD1023959S1
(en)
|
2021-05-11 |
2024-04-23 |
Asm Ip Holding B.V. |
Electrode for substrate processing apparatus
|
USD980814S1
(en)
|
2021-05-11 |
2023-03-14 |
Asm Ip Holding B.V. |
Gas distributor for substrate processing apparatus
|
USD980813S1
(en)
|
2021-05-11 |
2023-03-14 |
Asm Ip Holding B.V. |
Gas flow control plate for substrate processing apparatus
|
USD981973S1
(en)
|
2021-05-11 |
2023-03-28 |
Asm Ip Holding B.V. |
Reactor wall for substrate processing apparatus
|
USD990441S1
(en)
|
2021-09-07 |
2023-06-27 |
Asm Ip Holding B.V. |
Gas flow control plate
|
JP2023075832A
(ja)
*
|
2021-11-19 |
2023-05-31 |
東京エレクトロン株式会社 |
窒化膜の成膜方法及びプラズマ処理装置
|
DE102022108150B3
(de)
|
2022-04-05 |
2023-04-27 |
Technische Universität Ilmenau |
Verfahren und Reaktorkonfiguration zur Herstellung von Oxid- oder Oxinitridschichten
|