JP5541223B2 - 成膜方法及び成膜装置 - Google Patents
成膜方法及び成膜装置 Download PDFInfo
- Publication number
- JP5541223B2 JP5541223B2 JP2011105146A JP2011105146A JP5541223B2 JP 5541223 B2 JP5541223 B2 JP 5541223B2 JP 2011105146 A JP2011105146 A JP 2011105146A JP 2011105146 A JP2011105146 A JP 2011105146A JP 5541223 B2 JP5541223 B2 JP 5541223B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- gas
- valve
- film forming
- forming method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Description
シリコン酸化膜よりなる薄膜と、この下地の金属含有膜との界面に存在することになる金属酸化膜の厚さをコントロールして、この厚さを抑制することができる。この結果、上記金属酸化膜の膜厚を抑制して電気的特性の低下を防止することが可能になると共に、形状不良の発生も防止することができる。
次に、先に説明した本発明方法を実施したので、その評価結果について説明する。図4はホールド期間と1サイクル当たりの成膜レートとの関係を示すグラフ、図5は1サイクル当たりの成膜レートと金属含有膜表面と金属酸化膜の膜厚との関係を示すグラフである。ここで評価した時の吸着工程の時間T1は変化させ、反応工程の時間T2は1〜30secの間で固定し、原料ガスの開閉弁62Bの開状態の所定の期間t1は1〜30secの間で固定した。そして、上述のように、吸着工程の時間T1を変化させることによって、吸着工程において原料ガスの開閉弁62Bが閉じられている時間、すなわちホールド期間h(=T1−t1)を変化させた。
22 処理容器
24 内筒
26 外筒
34 ウエハボート(保持手段)
36 蓋部
52 加熱手段
54 原料ガス供給系
56 反応ガス供給系
58 パージガス供給系
60,64 ガスノズル
62,66,70 ガス通路
62B,66B 開閉弁
78 真空排気系
84 装置制御部
100 金属含有膜
102 金属酸化膜
104 薄膜(SiO2 )
W 半導体ウエハ(被処理体)
Claims (14)
- 被処理体を収容することができる処理容器と、
開閉弁を有して前記処理容器内へ原料ガスを供給することができる原料ガス供給系と、
開閉弁を有して前記処理容器内へ反応ガスを供給することができる反応ガス供給系と、
開閉弁を有して前記処理容器内の雰囲気を真空引きすることができる真空排気系とを備えた成膜装置を用いて表面に自然に形成された金属酸化膜を有する金属含有膜が形成された前記被処理体にシリコン酸化膜よりなる薄膜を形成する成膜方法において、
前記真空排気系の前記開閉弁を閉じた状態で前記原料ガス供給系の前記開閉弁を最初の所定の期間は開状態にして前記原料ガスを一時的に供給した後に直ちに閉状態にして該閉状態を所定のホールド期間だけ維持して前記原料ガスを前記被処理体の表面に吸着させる吸着工程と、
前記反応ガス供給系の前記開閉弁を開状態にして前記反応ガスを前記処理容器内へ供給して前記反応ガスを前記原料ガスと反応させて薄膜を形成する反応工程とを、間に間欠期間を挟んで交互に複数回繰り返すようにすると共に前記ホールド期間の長さを調整することにより前記金属含有膜と前記薄膜との界面に形成されている前記金属酸化膜の厚さをコントロールするようにしたことを特徴とする成膜方法。 - 前記間欠期間には、前記真空排気系の前記開閉弁を開いた状態で前記処理容器内の雰囲気を排気する排気工程を行うようにしたことを特徴とする請求項1記載の成膜方法。
- 前記排気工程では、前記処理容器内へ不活性ガスを供給した状態で真空引きすることを特徴とする請求項2記載の成膜方法。
- 前記排気工程では、前記処理容器内への全てのガスの供給を停止した状態で真空引きすることを特徴とする請求項2記載の成膜方法。
- 前記ホールド期間の長さは、前記金属酸化膜が自然に形成されている時の初期の膜厚以下となるような長さであることを特徴とする請求項1乃至4のいずれか一項に記載の成膜方法。
- 前記吸着工程と前記反応工程とを複数回繰り返す際の1回のサイクルにおける成膜レートは1.1Å/cycle以上であることを特徴とする請求項1乃至5のいずれか一項に記載の成膜方法。
- 前記原料ガスは、アミノシラン系有機ソースよりなることを特徴とする請求項1乃至6のいずれか一項に記載の成膜方法。
- 前記アミノシラン系有機ソースは3DMASであり、前記吸着工程と前記反応工程のプロセス温度は550℃以上であることを特徴とする請求項7記載の成膜方法。
- 前記アミノシラン系有機ソースはDIPASであり、前記吸着工程と前記反応工程のプロセス温度は450℃以下であることを特徴とする請求項7記載の成膜方法。
- 前記金属含有膜は、タングステン膜、タングステン窒化膜、チタン膜、チタン窒化膜、タンタル膜、タンタル窒化膜よりなる群から選択される1の膜であることを特徴とする請求項1乃至9のいずれか一項に記載の成膜方法。
- 前記原料ガスは、液体の原料を気化器にて気化することにより形成されることを特徴とする請求項1乃至10のいずれか一項に記載の成膜方法。
- 前記気化器は、前記液体の原料の温度と圧力で決まる蒸気圧により発生量が制御される原料タンクを兼用する気化器であることを特徴とする請求項11記載の成膜方法。
- 前記反応ガスは、O3 、O2 、N2 O、NOよりなる群から選択される1以上のガスよりなることを特徴とする請求項1乃至12のいずれか一項に記載の成膜方法。
- 被処理体を収容することができる処理容器と、
前記被処理体を保持する保持手段と、
前記被処理体を加熱する加熱手段と、
開閉弁を有して前記処理容器内へ原料ガスを供給することができる原料ガス供給系と、
開閉弁を有して前記処理容器内へ反応ガスを供給することができる反応ガス供給系と、
開閉弁を有して前記処理容器内の雰囲気を真空引きすることができる真空排気系と、
請求項1乃至13のいずれか一項に記載の成膜方法を実行するように装置全体を制御する装置制御部と、
を備えたことを特徴とする成膜装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011105146A JP5541223B2 (ja) | 2010-07-29 | 2011-05-10 | 成膜方法及び成膜装置 |
TW100126004A TWI524424B (zh) | 2010-07-29 | 2011-07-22 | 膜沉積方法及膜沉積裝置 |
US13/189,648 US8658247B2 (en) | 2010-07-29 | 2011-07-25 | Film deposition method |
KR1020110074510A KR101434345B1 (ko) | 2010-07-29 | 2011-07-27 | 성막 방법 및 성막 장치 |
CN201110217038.0A CN102345111B (zh) | 2010-07-29 | 2011-07-29 | 成膜方法和成膜装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010170758 | 2010-07-29 | ||
JP2010170758 | 2010-07-29 | ||
JP2011105146A JP5541223B2 (ja) | 2010-07-29 | 2011-05-10 | 成膜方法及び成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012049506A JP2012049506A (ja) | 2012-03-08 |
JP5541223B2 true JP5541223B2 (ja) | 2014-07-09 |
Family
ID=45903990
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011105146A Active JP5541223B2 (ja) | 2010-07-29 | 2011-05-10 | 成膜方法及び成膜装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8658247B2 (ja) |
JP (1) | JP5541223B2 (ja) |
KR (1) | KR101434345B1 (ja) |
TW (1) | TWI524424B (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5869923B2 (ja) * | 2012-03-09 | 2016-02-24 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
JP2014017296A (ja) * | 2012-07-06 | 2014-01-30 | Tokyo Electron Ltd | 成膜方法 |
JP6196833B2 (ja) * | 2012-09-26 | 2017-09-13 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
JP6346022B2 (ja) * | 2013-07-31 | 2018-06-20 | 京セラ株式会社 | 薄膜形成方法および太陽電池素子の製造方法 |
KR101494274B1 (ko) * | 2013-11-08 | 2015-02-17 | 주식회사 유진테크 | 사이클릭 박막 증착 방법 및 반도체 제조 방법, 그리고 비휘발성 메모리 셀 |
US9396930B2 (en) * | 2013-12-27 | 2016-07-19 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
JP6211941B2 (ja) * | 2014-01-28 | 2017-10-11 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
JP5852151B2 (ja) | 2014-02-12 | 2016-02-03 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
JP5855691B2 (ja) | 2014-02-25 | 2016-02-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
JP6270575B2 (ja) * | 2014-03-24 | 2018-01-31 | 株式会社日立国際電気 | 反応管、基板処理装置及び半導体装置の製造方法 |
JP6529348B2 (ja) | 2015-06-05 | 2019-06-12 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
JP2020178020A (ja) * | 2019-04-17 | 2020-10-29 | 国立大学法人山形大学 | 薄膜堆積方法及び装置 |
CN112420486A (zh) * | 2019-08-22 | 2021-02-26 | 长鑫存储技术有限公司 | 半导体薄膜的形成方法 |
JP7330091B2 (ja) * | 2019-12-24 | 2023-08-21 | 東京エレクトロン株式会社 | 成膜方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI118158B (sv) * | 1999-10-15 | 2007-07-31 | Asm Int | Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess |
JP4236707B2 (ja) | 1995-09-14 | 2009-03-11 | 日産自動車株式会社 | 化学的気相成長法及び化学的気相成長装置 |
US6342277B1 (en) * | 1996-08-16 | 2002-01-29 | Licensee For Microelectronics: Asm America, Inc. | Sequential chemical vapor deposition |
US6828218B2 (en) * | 2001-05-31 | 2004-12-07 | Samsung Electronics Co., Ltd. | Method of forming a thin film using atomic layer deposition |
US20030059535A1 (en) * | 2001-09-25 | 2003-03-27 | Lee Luo | Cycling deposition of low temperature films in a cold wall single wafer process chamber |
JP3947126B2 (ja) * | 2002-04-11 | 2007-07-18 | 株式会社日立国際電気 | 半導体製造装置 |
KR100468729B1 (ko) * | 2002-04-25 | 2005-01-29 | 삼성전자주식회사 | Hcd 소스를 이용하여 실리콘 산화막을 원자층 증착하는방법 |
JP2004006551A (ja) * | 2002-06-03 | 2004-01-08 | Hitachi Kokusai Electric Inc | 基板処理装置および基板処理方法 |
US7713592B2 (en) * | 2003-02-04 | 2010-05-11 | Tegal Corporation | Nanolayer deposition process |
US20050103264A1 (en) * | 2003-11-13 | 2005-05-19 | Frank Jansen | Atomic layer deposition process and apparatus |
JP4595702B2 (ja) | 2004-07-15 | 2010-12-08 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体 |
US20060125030A1 (en) * | 2004-12-13 | 2006-06-15 | Micron Technology, Inc. | Hybrid ALD-CVD of PrxOy/ZrO2 films as gate dielectrics |
JP2006245089A (ja) * | 2005-03-01 | 2006-09-14 | Mitsui Eng & Shipbuild Co Ltd | 薄膜形成方法 |
JP4711733B2 (ja) * | 2005-05-12 | 2011-06-29 | 株式会社Adeka | 酸化珪素系薄膜の製造方法 |
KR101100428B1 (ko) * | 2005-09-23 | 2011-12-30 | 삼성전자주식회사 | SRO(Silicon Rich Oxide) 및 이를적용한 반도체 소자의 제조방법 |
JP4836761B2 (ja) * | 2006-11-29 | 2011-12-14 | 株式会社日立国際電気 | 半導体デバイスの製造方法 |
US20080207007A1 (en) * | 2007-02-27 | 2008-08-28 | Air Products And Chemicals, Inc. | Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films |
US20090056877A1 (en) * | 2007-08-31 | 2009-03-05 | Tokyo Electron Limited | Plasma processing apparatus |
JP5306691B2 (ja) * | 2008-04-01 | 2013-10-02 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
JP4861391B2 (ja) * | 2008-11-25 | 2012-01-25 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
JP5223804B2 (ja) * | 2009-07-22 | 2013-06-26 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
US8293658B2 (en) * | 2010-02-17 | 2012-10-23 | Asm America, Inc. | Reactive site deactivation against vapor deposition |
-
2011
- 2011-05-10 JP JP2011105146A patent/JP5541223B2/ja active Active
- 2011-07-22 TW TW100126004A patent/TWI524424B/zh not_active IP Right Cessation
- 2011-07-25 US US13/189,648 patent/US8658247B2/en active Active
- 2011-07-27 KR KR1020110074510A patent/KR101434345B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
TWI524424B (zh) | 2016-03-01 |
US20120190215A1 (en) | 2012-07-26 |
KR20120024384A (ko) | 2012-03-14 |
KR101434345B1 (ko) | 2014-08-26 |
JP2012049506A (ja) | 2012-03-08 |
TW201209921A (en) | 2012-03-01 |
US8658247B2 (en) | 2014-02-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5541223B2 (ja) | 成膜方法及び成膜装置 | |
JP5223804B2 (ja) | 成膜方法及び成膜装置 | |
JP6538582B2 (ja) | 基板処理装置、半導体装置の製造方法およびプログラム | |
KR101521466B1 (ko) | 가스 공급 장치, 열처리 장치, 가스 공급 방법 및 열처리 방법 | |
US8431494B2 (en) | Film formation method and film formation apparatus | |
JP4961381B2 (ja) | 基板処理装置、基板処理方法及び半導体装置の製造方法 | |
JP4595702B2 (ja) | 成膜方法、成膜装置及び記憶媒体 | |
JP5774822B2 (ja) | 半導体デバイスの製造方法及び基板処理装置 | |
JP5661262B2 (ja) | 成膜方法および成膜装置 | |
JP4694209B2 (ja) | 基板処理装置及び半導体装置の製造方法 | |
WO2020016914A1 (ja) | 半導体装置の製造方法、基板処理装置及びプログラム | |
TW202144606A (zh) | 半導體裝置之製造方法、程式及基板處理裝置 | |
JP6994483B2 (ja) | 半導体装置の製造方法、プログラム、及び基板処理装置 | |
JP5649894B2 (ja) | Ge−Sb−Te膜の成膜方法 | |
TWI788683B (zh) | 基板處理裝置、基板支撐具、半導體裝置的製造方法及程式 | |
CN102345111B (zh) | 成膜方法和成膜装置 | |
JP5457287B2 (ja) | 基板処理装置、基板処理方法及び半導体デバイスの製造方法 | |
JP7079340B2 (ja) | 半導体装置の製造方法、基板処理装置、及びプログラム | |
JP5204809B2 (ja) | 基板処理装置、基板処理方法及び半導体デバイスの製造方法 | |
WO2020188654A1 (ja) | 半導体装置の製造方法、基板処理装置およびプログラム | |
CN117758231A (zh) | 衬底处理方法、半导体器件的制造方法、衬底处理装置及记录介质 | |
CN117716062A (zh) | 半导体装置的制造方法、基板处理装置、程序以及涂布方法 | |
JP2005303153A (ja) | 基板処理装置及び半導体デバイスの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130402 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130718 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130806 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130920 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140408 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140421 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5541223 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |