JP7146690B2 - 堆積および除去を使用した選択的層形成 - Google Patents
堆積および除去を使用した選択的層形成 Download PDFInfo
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- JP7146690B2 JP7146690B2 JP2019086534A JP2019086534A JP7146690B2 JP 7146690 B2 JP7146690 B2 JP 7146690B2 JP 2019086534 A JP2019086534 A JP 2019086534A JP 2019086534 A JP2019086534 A JP 2019086534A JP 7146690 B2 JP7146690 B2 JP 7146690B2
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Description
選択性は、[(第一の表面上の堆積)-(第二の表面上の堆積)]/(第一の表面上の堆積)によって計算される百分率として示されることができる。堆積は様々な手段のいずれでも測定されうる。一部の実施形態において、堆積は堆積した材料の測定された厚さとして示されてもよい。一部の実施形態において、堆積は堆積した材料の測定量として示されてもよい。
一部の実施形態によると、誘電体膜は、酸素ベースのALDプロセスで基材の第一の表面上に堆積される。一部の実施形態において、堆積された誘電体膜は、例えば酸化ケイ素(例えば、SiO2)、またはPEALDプロセスで成長させうるその他の金属酸化物であってもよい。一部の実施形態において、堆積された誘電体膜はSiO2、TiO2、ZrO2、HfO2、Nb2O5、Ta2O5、WO3、NiOおよびその組み合わせを含むことができる。基材の第二の表面は、パッシベーション層によって覆われてもよい。一部の実施形態において、パッシベーション層は有機層である。有機パッシベーション層は、ポリイミドまたはポリアミドなどのポリマーであってもよい。
Claims (29)
- パターン付き基材の第一の表面上に誘電材料を選択的に形成するための原子層堆積(ALD)プロセスであって、
第一の表面および第二の表面を備える基材を提供することであって、前記第二の表面がその上にパッシベーション層を含む、提供することと、
前記基材を第一の前駆体と、酸素を含む第二の反応物質とに交互にかつ連続的に接触させることを含む少なくとも一つの堆積サイクルを実施することとを含み、
前記第二の反応物質が前記第一の前駆体と反応して前記第一の表面上に誘電材料を形成し、
前記パッシベーション層が、各堆積サイクル中に前記第二の反応物質によってアッシングされる、方法。 - 前記第一の表面が誘電体表面である、請求項1に記載の方法。
- 前記誘電体表面が酸化ケイ素を含む、請求項2に記載の方法。
- 前記第一の表面がlow-k材料を含む、請求項1に記載の方法。
- 前記第二の表面が金属表面である、請求項1に記載の方法。
- 前記金属表面がCo、CuまたはWのうちの少なくとも一つを含む、請求項5に記載の方法。
- 前記誘電材料が酸化物である、請求項1に記載の方法。
- 前記酸化物が酸化ケイ素である、請求項7に記載の方法。
- 前記酸化物が金属酸化物である、請求項7に記載の方法。
- 前記第一の前駆体が、金属前駆体、ケイ素前駆体、またはそれらの混合物を含む、請求項1に記載の方法。
- 前記第一の前駆体がアルキルアミノシランである、請求項1に記載の方法。
- 前記パッシベーション層が有機材料を含む、請求項1に記載の方法。
- 前記パッシベーション層が第一の堆積サイクルの開始前に、前記第一の表面と相対的に前記第二の表面上に選択的に堆積される、請求項1に記載の方法。
- 前記堆積サイクルが複数回繰り返されて、前記第一の表面上に所望の厚さの酸化物膜を形成する、請求項1に記載の方法。
- 各堆積サイクルの開始と終了の間の前記パッシベーション層への追加的パッシベーション層の選択的堆積をさらに含む、請求項14に記載の方法。
- 前記原子層堆積プロセスがプラズマ増強原子層堆積(PEALD)プロセスである、請求項1に記載のプロセス。
- 前記少なくとも一つの堆積サイクルが、前記第一の前駆体と接触する前に前記基材を前記第二の反応物質と接触させることで始まる、請求項1に記載の方法。
- 前記少なくとも一つの堆積サイクルが、前記基材を各サイクルにおいて少なくとも一つの追加的反応物質と接触させることをさらに含む、請求項1に記載の方法。
- 前記基材を前記第二の反応物質と接触させることが、前記第二の反応物質をプラズマで起動することをさらに含む、請求項1に記載の方法。
- 前記誘電材料が、前記パッシベーション層と相対的に前記第一の表面上に選択的に形成される、請求項1に記載の方法。
- 前記誘電材料が前記パッシベーション層上に形成され、前記誘電材料が前記パッシベーション層の前記アッシングで前記パッシベーション層から除去され、それによって前記第一の表面上に前記誘電材料を選択的に形成する、請求項1に記載の方法。
- パターン付き基材の表面上に材料を選択的に形成するための周期的堆積プロセスであって、
第一の表面および第二の表面を備える基材を提供することであって、前記第二の表面がその上にパッシベーション層を含み、かつ前記パッシベーション層が有機層を含む、提供することと、
前記基材を第一の前駆体と第二の反応物質とに交互にかつ連続的に接触させることを含む少なくとも一つの堆積サイクルを実施することであって、前記第二の反応物質が酸素を含む、実施することとを含み、
前記第二の反応物質が前記第一の前駆体と反応して前記第一の表面上に前記材料を形成し、かつ
前記パッシベーション層が、各堆積サイクル中に前記第二の反応物質によってエッチングされ、かつエッチングがアッシングを含む、
周期的堆積プロセス。 - 前記プロセスが原子層堆積(ALD)を含む、請求項22に記載の周期的堆積プロセス。
- 前記プロセスがプラズマ増強ALD(PEALD)を含む、請求項23に記載の周期的堆積プロセス。
- 前記第二の反応物質が、さらにプラズマを含む、請求項22に記載の周期的堆積プロセス。
- 前記パッシベーション層がポリマーを含む、請求項22に記載の周期的堆積プロセス。
- 前記パッシベーション層の前記エッチングによって前記第二の表面が露出される前に堆積が停止される、請求項22に記載の周期的堆積プロセス。
- 前記堆積を停止後、および前記堆積を継続する前に、前記第二の表面上に追加的なパッシベーション層をさらに堆積させることをさらに含む、請求項27に記載の周期的堆積プロセス。
- パターン付き基材の第一の誘電体表面上に酸化物材料を選択的に形成するためのプラズマ増強原子層堆積(PEALD)プロセスであって、
第一の誘電体表面および第二の金属性表面を備える基材を提供することであって、前記第二の金属性表面がその上に有機パッシベーション層を含む、提供することと、
前記基材を第一の前駆体と、酸素およびプラズマを含む第二の反応物質とに交互にかつ連続的に接触させることを含む少なくとも一つの堆積サイクルを実施することとを含み、
前記第二の反応物質が前記第一の前駆体と反応して前記第一の誘電体表面上に酸化物材料を形成し、
前記有機パッシベーション層が、各堆積サイクル中に前記第二の反応物質によってアッシングされる、方法。
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Also Published As
Publication number | Publication date |
---|---|
US10872765B2 (en) | 2020-12-22 |
US20230016537A1 (en) | 2023-01-19 |
TW202307245A (zh) | 2023-02-16 |
US20190341245A1 (en) | 2019-11-07 |
TWI783909B (zh) | 2022-11-11 |
CN110444476B (zh) | 2022-04-19 |
CN114678271A (zh) | 2022-06-28 |
TW201947054A (zh) | 2019-12-16 |
KR102521375B1 (ko) | 2023-04-14 |
KR20190127578A (ko) | 2019-11-13 |
JP7240549B2 (ja) | 2023-03-15 |
TWI773897B (zh) | 2022-08-11 |
US11804373B2 (en) | 2023-10-31 |
JP2022177198A (ja) | 2022-11-30 |
US11501966B2 (en) | 2022-11-15 |
US20210118669A1 (en) | 2021-04-22 |
KR20230051653A (ko) | 2023-04-18 |
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