JP5036569B2 - 炭化珪素半導体装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 114
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 84
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 83
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 230000006798 recombination Effects 0.000 claims description 117
- 238000005215 recombination Methods 0.000 claims description 109
- 239000012535 impurity Substances 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 21
- 229910052723 transition metal Inorganic materials 0.000 claims description 10
- 150000003624 transition metals Chemical class 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052720 vanadium Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 229910052706 scandium Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 98
- 150000002500 ions Chemical class 0.000 description 7
- 238000002109 crystal growth method Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 239000011651 chromium Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 239000010955 niobium Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7806—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本実施の形態では、第1の導電型をn型、第2の導電型をp型であるものとして説明する。図1は、本実施の形態に係る炭化珪素半導体装置を示す断面図である。図1に示すように、本実施の形態に係る炭化珪素半導体装置は、第1の半導体層であるドリフト層2と、第2の半導体層であるベース領域3と、第3の半導体層である中濃度p型(第2の導電型)領域6と、再結合領域7とを備える。
本実施の形態では、第1の導電型をn型、第2の導電型をp型であるものとして説明する。図5に、本実施の形態に係る炭化珪素半導体装置の断面図を示す。図5に示すように、本実施の形態に係る炭化珪素半導体装置は、第1の半導体層であるドリフト層2と、第2の半導体層であるガードリング領域15と、第3の半導体層である中濃度p型(第2の導電型)領域6と、再結合領域7とを備える。以下、本実施の形態に係る半導体装置の構成のうち、実施の形態1と同一の構成については、同一の符号を付すものとし、新たに説明しない構成については、実施の形態1と同じであるものとする。
本実施の形態では、第1の導電型をn型、第2の導電型をp型であるものとして説明する。図6に、本実施の形態に係る炭化珪素半導体装置の断面図を示す。図6に示すように、本実施の形態に係る炭化珪素半導体装置は、第1の半導体層であるドリフト層2と、第2の半導体層であるガードリング領域15およびp型(第2の導電型)領域20と、第3の半導体層である中濃度p型(第2の導電型)領域6,21と、再結合領域7とを備える。以下、本実施の形態に係る半導体装置の構成のうち、実施の形態1と同一の構成については、同一の符号を付すものとし、新たに説明しない構成については、実施の形態2と同じであるものとする。
Claims (10)
- 炭化珪素基板上に形成され、積層欠陥を有し第1の導電型を有する炭化珪素の第1の半導体層と、
前記第1の半導体層に接して形成され、積層欠陥を有し第2の導電型を有する炭化珪素の第2の半導体層と、
前記第1の半導体層、および/または、前記第2の半導体層に形成され、再結合中心が導入された再結合領域と、
前記第1の半導体層、および/または、前記第2の半導体層に形成され、当該半導体層よりも不純物濃度が高い第3の半導体層とを備え、
前記再結合領域は、
前記第1の半導体層と前記第2の半導体層との接合界面であるPN界面のうち、順方向通電開始直後に電流が前記第2の半導体層から前記第3の半導体層を介して前記第1の半導体層へ進む経路上にのみ形成された、
炭化珪素半導体装置。 - 前記第3の半導体層は、前記再結合領域に隣接して形成された、
請求項1に記載の炭化珪素半導体装置。 - 前記第3の半導体層は、前記再結合領域に重ねて形成された、
請求項1に記載の炭化珪素半導体装置。 - 前記第3の半導体層の不純物濃度が1×1019cm−3以上である、
請求項2または請求項3に記載の炭化珪素半導体装置。 - 前記第3の半導体層の厚みが、0.1〜0.5μmである、
請求項2乃至請求項4のいずれかに記載の炭化珪素半導体装置。 - 前記再結合領域は、
遷移金属を含んでなる、
請求項1乃至請求項5のいずれかに記載の炭化珪素半導体装置。 - 前記遷移金属は、
Sc,Ti,V,Cr,Y,Zr,Nb,Mo,Hf,Ta,Wの少なくとも一つを含む、
請求項6に記載の炭化珪素半導体装置。 - 前記再結合領域の前記遷移金属の濃度は、1×1017cm−3以上である、
請求項6または請求項7に記載の炭化珪素半導体装置。 - 前記再結合領域の厚さは、0.1μm以上である、
請求項6乃至請求項8のいずれかに記載の炭化珪素半導体装置。 - (a)炭化珪素基板上に、積層欠陥を有し第1の導電型を有する炭化珪素の第1の半導体層を形成する工程と、
(b)前記第1の半導体層に接して、積層欠陥を有し第2の導電型を有する炭化珪素の第2の半導体層を形成する工程と、
(c)前記第1の半導体層、および/または、前記第2の半導体層に、再結合中心が導入された再結合領域を形成する工程と、
(d)前記第1の半導体層、および/または、前記第2の半導体層に、当該半導体層よりも不純物濃度が高い第3の半導体層を形成する工程とを備え、
前記工程(c)における前記再結合領域は、
前記第1の半導体層と前記第2の半導体層との接合界面であるPN界面のうち、順方向通電開始直後に電流が前記第2の半導体層から前記第3の半導体層を介して前記第1の半導体層へ進む経路上にのみ形成された、
炭化珪素半導体装置の製造方法。
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WO2012105609A1 (ja) | 2011-02-02 | 2012-08-09 | ローム株式会社 | 半導体装置 |
JP6145165B2 (ja) | 2013-06-17 | 2017-06-07 | 株式会社日立製作所 | 半導体装置 |
JP6183080B2 (ja) * | 2013-09-09 | 2017-08-23 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
US9287377B2 (en) | 2014-08-04 | 2016-03-15 | Infineon Technologies Ag | Semiconductor device and manufacturing method |
JP6402773B2 (ja) | 2014-09-08 | 2018-10-10 | 富士電機株式会社 | 半導体装置及びその製造方法 |
JP6988175B2 (ja) | 2017-06-09 | 2022-01-05 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
JP6862381B2 (ja) * | 2018-03-02 | 2021-04-21 | 株式会社東芝 | 半導体装置 |
JP7090530B2 (ja) * | 2018-11-15 | 2022-06-24 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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US7221010B2 (en) * | 2002-12-20 | 2007-05-22 | Cree, Inc. | Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors |
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