DE69324630D1 - Dotierungsverfahren, Halbleiterbauelement und Verfahren zu seiner Herstellung - Google Patents
Dotierungsverfahren, Halbleiterbauelement und Verfahren zu seiner HerstellungInfo
- Publication number
- DE69324630D1 DE69324630D1 DE69324630T DE69324630T DE69324630D1 DE 69324630 D1 DE69324630 D1 DE 69324630D1 DE 69324630 T DE69324630 T DE 69324630T DE 69324630 T DE69324630 T DE 69324630T DE 69324630 D1 DE69324630 D1 DE 69324630D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- semiconductor device
- doping
- doping process
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8122—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/034—Diffusion of boron or silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/962—Quantum dots and lines
Applications Claiming Priority (15)
Application Number | Priority Date | Filing Date | Title |
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JP17942292 | 1992-06-13 | ||
JP17942192 | 1992-06-13 | ||
JP17942392 | 1992-06-13 | ||
JP18326092 | 1992-06-16 | ||
JP18619692 | 1992-06-18 | ||
JP18637592 | 1992-06-19 | ||
JP18637692 | 1992-06-19 | ||
JP31274492 | 1992-10-27 | ||
JP31624892 | 1992-10-30 | ||
JP31055992 | 1992-11-19 | ||
JP34547392 | 1992-11-30 | ||
JP361293 | 1993-01-12 | ||
JP530793 | 1993-01-14 | ||
JP695093 | 1993-01-19 | ||
JP5405393 | 1993-03-15 |
Publications (2)
Publication Number | Publication Date |
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DE69324630D1 true DE69324630D1 (de) | 1999-06-02 |
DE69324630T2 DE69324630T2 (de) | 1999-10-21 |
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DE69324630T Expired - Fee Related DE69324630T2 (de) | 1992-06-13 | 1993-06-10 | Dotierungsverfahren, Halbleiterbauelement und Verfahren zu seiner Herstellung |
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US (2) | US5350709A (de) |
EP (1) | EP0574827B1 (de) |
DE (1) | DE69324630T2 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
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KR950034830A (ko) * | 1994-04-29 | 1995-12-28 | 빈센트 비. 인그라시아 | 전계 효과 트랜지스터 및 이 트랜지스터의 제조 방법 |
US5512518A (en) * | 1994-06-06 | 1996-04-30 | Motorola, Inc. | Method of manufacture of multilayer dielectric on a III-V substrate |
US5888890A (en) * | 1994-08-12 | 1999-03-30 | Lg Semicon Co., Ltd. | Method of manufacturing field effect transistor |
US5817580A (en) * | 1996-02-08 | 1998-10-06 | Micron Technology, Inc. | Method of etching silicon dioxide |
US5981934A (en) * | 1996-09-12 | 1999-11-09 | Canon Kabushiki Kaisha | Photovoltaic element having a transparent conductive layer with specified fractal dimension and fractal property |
TW354411B (en) * | 1996-09-27 | 1999-03-11 | Sanyo Electric Co | Semiconductor device and its manufacturing process |
KR100488830B1 (ko) * | 1997-01-23 | 2005-09-12 | 스미토모덴키고교가부시키가이샤 | Ii-vi족화합물반도체의열처리방법 |
JP3272259B2 (ja) * | 1997-03-25 | 2002-04-08 | 株式会社東芝 | 半導体装置 |
JP3501284B2 (ja) * | 2001-03-30 | 2004-03-02 | 富士通カンタムデバイス株式会社 | 半導体装置の製造方法 |
JP2004103656A (ja) * | 2002-09-05 | 2004-04-02 | Sony Corp | 半導体装置及び半導体装置の製造方法 |
US7030469B2 (en) * | 2003-09-25 | 2006-04-18 | Freescale Semiconductor, Inc. | Method of forming a semiconductor package and structure thereof |
US20060175631A1 (en) * | 2005-02-04 | 2006-08-10 | Raytheon Company | Monolithic integrated circuit having enhanced breakdown voltage |
KR101980197B1 (ko) * | 2012-09-04 | 2019-05-20 | 삼성전자주식회사 | 고전자 이동도 트랜지스터 및 그 제조방법 |
US8900985B2 (en) * | 2012-10-15 | 2014-12-02 | Infineon Technologies Austria Ag | Self-doped ohmic contacts for compound semiconductor devices |
CN103077891B (zh) * | 2013-01-21 | 2015-07-01 | 中国电子科技集团公司第五十八研究所 | 基于超级结的氮化镓hemt器件及制备方法 |
US20150112623A1 (en) * | 2013-10-22 | 2015-04-23 | United Microelectronics Corp. | Structure for measuring doping region resistance and method of measuring critical dimension of spacer |
US9620607B2 (en) * | 2014-12-04 | 2017-04-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gate all around device structure and Fin field effect transistor (FinFET) device structure |
EP3193364B1 (de) * | 2016-01-18 | 2020-10-21 | Nexperia B.V. | Integriertes widerstandselement und entsprechendes herstellungsverfahren |
JP2019145616A (ja) | 2018-02-19 | 2019-08-29 | 株式会社東芝 | 半導体装置 |
CN113421826B (zh) * | 2021-06-18 | 2024-02-09 | 南京大学 | 二维层状材料的原子级精度无损逐层刻蚀方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3733527A (en) * | 1970-07-22 | 1973-05-15 | Hitachi Ltd | Semiconductor device and method for making the same |
US3907616A (en) * | 1972-11-15 | 1975-09-23 | Texas Instruments Inc | Method of forming doped dielectric layers utilizing reactive plasma deposition |
JPH0727873B2 (ja) * | 1987-11-04 | 1995-03-29 | 三菱電機株式会社 | 化合物半導体へのSi拡散方法 |
US4824798A (en) * | 1987-11-05 | 1989-04-25 | Xerox Corporation | Method of introducing impurity species into a semiconductor structure from a deposited source |
JPH02111019A (ja) * | 1988-10-20 | 1990-04-24 | Sanyo Electric Co Ltd | 熱処理方法 |
US4924285A (en) * | 1988-10-25 | 1990-05-08 | The United States Of America As Represented By The Secretary Of The Navy | Monolithic multichannel detector amplifier arrays and circuit channels |
JPH03188632A (ja) * | 1989-12-18 | 1991-08-16 | Murata Mfg Co Ltd | 半導体装置 |
EP0444465A2 (de) * | 1990-03-02 | 1991-09-04 | International Business Machines Corporation | Kontrollierte Siliziumdotierung von III-V-Verbindungen durch thermische Oxidation einer Silizium-Abdeckschicht |
US5188978A (en) * | 1990-03-02 | 1993-02-23 | International Business Machines Corporation | Controlled silicon doping of III-V compounds by thermal oxidation of silicon capping layer |
US5126281A (en) * | 1990-09-11 | 1992-06-30 | Hewlett-Packard Company | Diffusion using a solid state source |
US5283445A (en) * | 1991-11-29 | 1994-02-01 | Fujitsu Limited | Quantum semiconductor device employing quantum boxes for enabling compact size and high-speed operation |
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1993
- 1993-06-10 EP EP93109321A patent/EP0574827B1/de not_active Expired - Lifetime
- 1993-06-10 DE DE69324630T patent/DE69324630T2/de not_active Expired - Fee Related
- 1993-06-10 US US08/075,232 patent/US5350709A/en not_active Expired - Fee Related
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1994
- 1994-03-30 US US08/220,542 patent/US5557141A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5350709A (en) | 1994-09-27 |
EP0574827B1 (de) | 1999-04-28 |
US5557141A (en) | 1996-09-17 |
EP0574827A1 (de) | 1993-12-22 |
DE69324630T2 (de) | 1999-10-21 |
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