KR920015453A - 스위칭 반도체장치의 제조방법 - Google Patents

스위칭 반도체장치의 제조방법 Download PDF

Info

Publication number
KR920015453A
KR920015453A KR1019920000551A KR920000551A KR920015453A KR 920015453 A KR920015453 A KR 920015453A KR 1019920000551 A KR1019920000551 A KR 1019920000551A KR 920000551 A KR920000551 A KR 920000551A KR 920015453 A KR920015453 A KR 920015453A
Authority
KR
South Korea
Prior art keywords
manufacturing
semiconductor device
switching semiconductor
impurity layer
conductive impurity
Prior art date
Application number
KR1019920000551A
Other languages
English (en)
Other versions
KR950001170B1 (ko
Inventor
아키히코 오사와
요시로 바바
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR920015453A publication Critical patent/KR920015453A/ko
Application granted granted Critical
Publication of KR950001170B1 publication Critical patent/KR950001170B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thyristors (AREA)
  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)

Abstract

내용 없음

Description

스위칭 반도체장치의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 따른 스위칭 반도체장치의 제조방법을 나타낸 도면. 제2도는 본 발명에 의해 얻어지는 스위칭 반도체장치의 단면도. 제3도는 프로톤(proton) 조사(照射)에 의한 캐리어농도와 깊이의 관계를 나타낸 그래프. 제4도는 프로톤 도우즈량과 캐리어농도의 관계를 나타낸 그래프.

Claims (4)

  1. 반도체 기판(1)상에 도전성 불순물층(8)을 에피택설 성장시키는 제1공정과, 사기 도전성 불순물층(8)내에 반도전형 반도체층(4)을 성장시키는 제2공정, 상기 도전성 불순물층(8)상에 필드보호막(5)을 매개로 하여 전극(6)을 부가하는 제3공정및, 하전입자를 조사함으로써 상기 반도체기판(1)과 상기 도전성 불순물층(8)과의 경계영역에 고(高)캐리어농도 영역(9)을 형성시키는 제4공정으로 구성된 것을 특징으로 하는 스위칭 반도체장치의 제조방법.
  2. 제1항에 있어서, 상기 하전압자로서 프로톤을 사용하는 것을 특징으로 하는 스위칭 반도체장치의 제조방법.
  3. 제1항에 있어서, 상기 하전입자로서 중수소이온 및 헬륨이온의 군(群)중에서 하나를 사용하는 것을 특징으로 하는 스위칭반도체장치의 제조방법.
  4. 제1항 내지 제3항중 어느 한항에 있어서, 상기 하전입자의 조사량이 1×1011개/㎠ 이상인 것을 특징으로 하는 스위칭 반도체장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019920000551A 1991-01-28 1992-01-16 스위칭 반도체장치의 제조방법 KR950001170B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-008725 1991-01-28
JP3008725A JPH04252078A (ja) 1991-01-28 1991-01-28 スイッチング半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR920015453A true KR920015453A (ko) 1992-08-26
KR950001170B1 KR950001170B1 (ko) 1995-02-11

Family

ID=11700932

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920000551A KR950001170B1 (ko) 1991-01-28 1992-01-16 스위칭 반도체장치의 제조방법

Country Status (3)

Country Link
EP (1) EP0497290A3 (ko)
JP (1) JPH04252078A (ko)
KR (1) KR950001170B1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1030375A4 (en) * 1998-09-10 2001-07-04 Mitsubishi Electric Corp SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
DE10243758A1 (de) * 2002-09-20 2004-04-01 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Verfahren zur Herstellung einer vergrabenen Stoppzone in einem Halbleiterbauelement und Halbleiterbauelement mit einer vergrabenen Stoppzone
JP5104314B2 (ja) 2005-11-14 2012-12-19 富士電機株式会社 半導体装置およびその製造方法
JP5374883B2 (ja) 2008-02-08 2013-12-25 富士電機株式会社 半導体装置およびその製造方法
CN109300994B (zh) * 2018-09-27 2023-05-30 上海维安半导体有限公司 一种伪负阻型低残压tvs器件及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS518869A (ja) * 1974-07-09 1976-01-24 Mitsubishi Electric Corp Handotaiepitakisharuehano seizohoho
JPS5329662A (en) * 1976-08-31 1978-03-20 Mitsubishi Electric Corp Production of semiconductor device
DE3117202A1 (de) * 1981-04-30 1982-11-18 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zum einstellen der lebensdauer der minoritaetsladungstraeger in halbleiterschaltern mit protonenstrahlen
US4762802A (en) * 1984-11-09 1988-08-09 American Telephone And Telegraph Company At&T, Bell Laboratories Method for preventing latchup in CMOS devices
JPH078099B2 (ja) * 1986-07-28 1995-01-30 日本電信電話株式会社 ケ−ブル外被接続部の機械強度保持構造
JPH05102161A (ja) * 1991-07-15 1993-04-23 Toshiba Corp 半導体装置の製造方法とその半導体装置

Also Published As

Publication number Publication date
JPH04252078A (ja) 1992-09-08
EP0497290A2 (en) 1992-08-05
KR950001170B1 (ko) 1995-02-11
EP0497290A3 (en) 1995-11-29

Similar Documents

Publication Publication Date Title
KR920020598A (ko) 반도체 장치 및 그 제조방법
KR950012775A (ko) 좁은 밴드갭 특성을 갖는 탄소 도프 접합 실리콘 반도체 디바이스 및 그 형성 방법
JPS5623771A (en) Semiconductor memory
KR930005257A (ko) 박막 전계효과 소자 및 그의 제조방법
JPS5515229A (en) Semiconductor photograph device
KR970702574A (ko) 반도체장치 및 그 제조방법
KR890008988A (ko) 전하저지층을 갖는 반도체 기억장치 및 그 제조방법
KR890003028A (ko) 고저항 다결정 실리콘의 제조방법
KR930005259A (ko) 반도체 장치 및 그 제조 방법
KR910008841A (ko) 과전압 보호 기능부 반도체 장치 및 이의 제조방법
KR920015453A (ko) 스위칭 반도체장치의 제조방법
KR890017793A (ko) 반도체 장치
JPS56150862A (en) Semiconductor device
JPS5588372A (en) Lateral type transistor
JPS52108777A (en) Field-effect transistor for schottky barrier layer
KR860001489A (ko) 반도체장치
JPS54114081A (en) Semiconductor integrated circuit device
KR870006637A (ko) 반도체소자의 제조방법
KR920702052A (ko) 반도체 광방출 디바이스
KR920015604A (ko) 반도체장치의 소자격리방법
JPS5269585A (en) Semiconductor device
KR920013756A (ko) 화합물반도체소자 및 그 제조방법
KR920007220A (ko) 박막트랜지스터의 제조방법
JPS5493980A (en) Field-effect semicoductor device
JPS6476770A (en) Insulated-gate bipolar transistor

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20030130

Year of fee payment: 9

LAPS Lapse due to unpaid annual fee