DE69307983D1 - Vertikal isolierter, monolithischer Hochleistungsbipolartransistor mit Topkollektor - Google Patents

Vertikal isolierter, monolithischer Hochleistungsbipolartransistor mit Topkollektor

Info

Publication number
DE69307983D1
DE69307983D1 DE69307983T DE69307983T DE69307983D1 DE 69307983 D1 DE69307983 D1 DE 69307983D1 DE 69307983 T DE69307983 T DE 69307983T DE 69307983 T DE69307983 T DE 69307983T DE 69307983 D1 DE69307983 D1 DE 69307983D1
Authority
DE
Germany
Prior art keywords
bipolar transistor
top collector
monolithic high
performance bipolar
vertically isolated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69307983T
Other languages
English (en)
Other versions
DE69307983T2 (de
Inventor
Jim Benjamin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics Inc
Application granted granted Critical
Publication of DE69307983D1 publication Critical patent/DE69307983D1/de
Publication of DE69307983T2 publication Critical patent/DE69307983T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
DE69307983T 1992-09-03 1993-09-02 Vertikal isolierter, monolithischer Hochleistungsbipolartransistor mit Topkollektor Expired - Fee Related DE69307983T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US93999792A 1992-09-03 1992-09-03

Publications (2)

Publication Number Publication Date
DE69307983D1 true DE69307983D1 (de) 1997-03-20
DE69307983T2 DE69307983T2 (de) 1997-05-28

Family

ID=25474056

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69307983T Expired - Fee Related DE69307983T2 (de) 1992-09-03 1993-09-02 Vertikal isolierter, monolithischer Hochleistungsbipolartransistor mit Topkollektor

Country Status (4)

Country Link
US (1) US5455448A (de)
EP (1) EP0590804B1 (de)
JP (1) JPH06181216A (de)
DE (1) DE69307983T2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07161728A (ja) * 1993-12-10 1995-06-23 Mitsubishi Electric Corp 半導体装置およびその製造方法
GB2301706A (en) * 1995-06-01 1996-12-11 Plessey Semiconductors Ltd Intergrated inductor arrangement
JPH11501464A (ja) * 1995-12-28 1999-02-02 フィリップス エレクトロニクス ネロムーゼ フェンノートシャップ 埋込ベース金属導体を有するｓｏｉ上にマイクロ波バーチカルバイポーラトランジスタを製造する方法
EP0812470B1 (de) * 1995-12-28 2003-03-19 Koninklijke Philips Electronics N.V. Verfahren zur herstellung von einem selbstausrichtenden vertikalen bipolaren transistor auf einem soi
US5736787A (en) * 1996-07-11 1998-04-07 Larimer; William R. Transistor package structured to provide heat dissipation enabling use of silicon carbide transistors and other high power semiconductor devices
US5838545A (en) * 1996-10-17 1998-11-17 International Business Machines Corporation High performance, low cost multi-chip modle package
KR100503531B1 (ko) * 1996-11-05 2005-09-26 코닌클리케 필립스 일렉트로닉스 엔.브이. 반도체디바이스
SE509780C2 (sv) * 1997-07-04 1999-03-08 Ericsson Telefon Ab L M Bipolär effekttransistor och framställningsförfarande
US5955781A (en) * 1998-01-13 1999-09-21 International Business Machines Corporation Embedded thermal conductors for semiconductor chips
US6373100B1 (en) 1998-03-04 2002-04-16 Semiconductor Components Industries Llc Semiconductor device and method for fabricating the same
US6404065B1 (en) * 1998-07-31 2002-06-11 I-Xys Corporation Electrically isolated power semiconductor package
US6239472B1 (en) 1998-09-01 2001-05-29 Philips Electronics North America Corp. MOSFET structure having improved source/drain junction performance
US6414371B1 (en) * 2000-05-30 2002-07-02 International Business Machines Corporation Process and structure for 50+ gigahertz transistor
US6731002B2 (en) 2001-05-04 2004-05-04 Ixys Corporation High frequency power device with a plastic molded package and direct bonded substrate
US6727585B2 (en) 2001-05-04 2004-04-27 Ixys Corporation Power device with a plastic molded package and direct bonded substrate
WO2002091474A1 (en) * 2001-05-09 2002-11-14 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device and its manufacturing method
WO2003044863A1 (en) * 2001-11-20 2003-05-30 The Regents Of The University Of California Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications
JP4979573B2 (ja) * 2004-04-22 2012-07-18 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体構造
US7125785B2 (en) * 2004-06-14 2006-10-24 International Business Machines Corporation Mixed orientation and mixed material semiconductor-on-insulator wafer
US9059130B2 (en) * 2012-12-31 2015-06-16 International Business Machines Corporation Phase changing on-chip thermal heat sink

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202925C (de) * 1969-04-30 1900-01-01
GB1244759A (en) * 1968-12-11 1971-09-02 Associated Semiconductor Mft Improvements in and relating to methods of manufacturing semiconductor devices
US3768150A (en) * 1970-02-13 1973-10-30 B Sloan Integrated circuit process utilizing orientation dependent silicon etch
US3895392A (en) * 1973-04-05 1975-07-15 Signetics Corp Bipolar transistor structure having ion implanted region and method
US3868720A (en) * 1973-12-17 1975-02-25 Westinghouse Electric Corp High frequency bipolar transistor with integral thermally compensated degenerative feedback resistance
US4016643A (en) * 1974-10-29 1977-04-12 Raytheon Company Overlay metallization field effect transistor
US3986196A (en) * 1975-06-30 1976-10-12 Varian Associates Through-substrate source contact for microwave FET
US4161740A (en) * 1977-11-07 1979-07-17 Microwave Semiconductor Corp. High frequency power transistor having reduced interconnection inductance and thermal resistance
US4168507A (en) * 1977-11-21 1979-09-18 Motorola, Inc. Structure and technique for achieving reduced inductive effect of undesired components of common lead inductance in a semiconductive RF power package
JPS54151377A (en) * 1978-05-19 1979-11-28 Nec Corp Semiconductor integrated circuit
JPS5539677A (en) * 1978-09-14 1980-03-19 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device and its manufacturing
JPS55117270A (en) * 1979-03-01 1980-09-09 Nippon Telegr & Teleph Corp <Ntt> Junction breakdown type field programmable cell array semiconductor device
US4454646A (en) * 1981-08-27 1984-06-19 International Business Machines Corporation Isolation for high density integrated circuits
JPS6038889A (ja) * 1983-08-12 1985-02-28 Hitachi Ltd 半導体装置およびその製造方法
US4688069A (en) * 1984-03-22 1987-08-18 International Business Machines Corporation Isolation for high density integrated circuits
US4651410A (en) * 1984-12-18 1987-03-24 Semiconductor Division Thomson-Csf Components Corporation Method of fabricating regions of a bipolar microwave integratable transistor
US4812890A (en) * 1985-11-19 1989-03-14 Thompson-Csf Components Corporation Bipolar microwave integratable transistor
US4639760A (en) * 1986-01-21 1987-01-27 Motorola, Inc. High power RF transistor assembly
DE3632943A1 (de) * 1986-09-27 1988-03-31 Bosch Gmbh Robert Hochfrequenz-leistungs-transistor in bipolar-epitaxial-technik
US5187554A (en) * 1987-08-11 1993-02-16 Sony Corporation Bipolar transistor
JPH027529A (ja) * 1988-06-27 1990-01-11 Nec Corp バイポーラトランジスタ及びその製造方法
JPH07109831B2 (ja) * 1990-01-25 1995-11-22 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
JPH06181216A (ja) 1994-06-28
EP0590804B1 (de) 1997-02-05
DE69307983T2 (de) 1997-05-28
US5455448A (en) 1995-10-03
EP0590804A1 (de) 1994-04-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee