DE3481746D1 - Bipolartransistor mit heterouebergang zwischen basis und kollektor. - Google Patents

Bipolartransistor mit heterouebergang zwischen basis und kollektor.

Info

Publication number
DE3481746D1
DE3481746D1 DE8484302952T DE3481746T DE3481746D1 DE 3481746 D1 DE3481746 D1 DE 3481746D1 DE 8484302952 T DE8484302952 T DE 8484302952T DE 3481746 T DE3481746 T DE 3481746T DE 3481746 D1 DE3481746 D1 DE 3481746D1
Authority
DE
Germany
Prior art keywords
heterouition
collector
base
bipolar transistor
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484302952T
Other languages
English (en)
Inventor
Jiro Yoshida
Mamoru Kurata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3481746D1 publication Critical patent/DE3481746D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
DE8484302952T 1983-05-17 1984-05-02 Bipolartransistor mit heterouebergang zwischen basis und kollektor. Expired - Lifetime DE3481746D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8607183A JPS59211267A (ja) 1983-05-17 1983-05-17 ヘテロ接合バイポ−ラトランジスタ

Publications (1)

Publication Number Publication Date
DE3481746D1 true DE3481746D1 (de) 1990-04-26

Family

ID=13876469

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484302952T Expired - Lifetime DE3481746D1 (de) 1983-05-17 1984-05-02 Bipolartransistor mit heterouebergang zwischen basis und kollektor.

Country Status (3)

Country Link
EP (1) EP0134069B1 (de)
JP (1) JPS59211267A (de)
DE (1) DE3481746D1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2647824B2 (ja) * 1984-08-10 1997-08-27 三洋電機株式会社 半導体積層構造
GB2181299B (en) * 1985-09-30 1989-03-15 Gen Electric Plc Semiconductor devices
US4788579A (en) * 1985-09-30 1988-11-29 The General Electric Company Semiconductor superlattice
CA1299771C (en) * 1987-02-06 1992-04-28 Tadao Ishibashi Heterojunction bipolar transistor with collector buffer layer
EP0355464A3 (de) * 1988-08-15 1990-04-18 Motorola, Inc. Auf kritisch fehlorientiertem Substrat gebildeter Heterojunction-Bipolartransistor
JP2801624B2 (ja) * 1988-12-09 1998-09-21 株式会社東芝 ヘテロ接合バイポーラトランジスタ
US5162243A (en) * 1991-08-30 1992-11-10 Trw Inc. Method of producing high reliability heterojunction bipolar transistors
JP2731089B2 (ja) * 1991-10-02 1998-03-25 三菱電機株式会社 高速動作半導体装置およびその製造方法
DE102008044069B3 (de) 2008-11-26 2010-08-05 Airbus Deutschland Gmbh Formkörper zur Herstellung eines Faserverbundbauteils

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511329A (en) * 1978-07-08 1980-01-26 Shunpei Yamazaki Semiconductor device
JPS5511330A (en) * 1978-07-08 1980-01-26 Shunpei Yamazaki Semiconductor device having continuous junction
DE2847451C2 (de) * 1978-11-02 1986-06-12 Telefunken electronic GmbH, 7100 Heilbronn Halbleiterbauelement und Verfahren zum Herstellen
DE3380047D1 (en) * 1982-09-17 1989-07-13 France Etat Ballistic heterojunction bipolar transistor

Also Published As

Publication number Publication date
EP0134069B1 (de) 1990-03-21
EP0134069A2 (de) 1985-03-13
JPH0315353B2 (de) 1991-02-28
EP0134069A3 (en) 1986-12-30
JPS59211267A (ja) 1984-11-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee