DE3774325D1 - Translineare statische speicherzelle mit bipolarer und mos-einrichtung. - Google Patents
Translineare statische speicherzelle mit bipolarer und mos-einrichtung.Info
- Publication number
- DE3774325D1 DE3774325D1 DE8787400869T DE3774325T DE3774325D1 DE 3774325 D1 DE3774325 D1 DE 3774325D1 DE 8787400869 T DE8787400869 T DE 8787400869T DE 3774325 T DE3774325 T DE 3774325T DE 3774325 D1 DE3774325 D1 DE 3774325D1
- Authority
- DE
- Germany
- Prior art keywords
- translinear
- bipolar
- storage cell
- mos device
- static storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/853,297 US4821235A (en) | 1986-04-17 | 1986-04-17 | Translinear static memory cell with bipolar and MOS devices |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3774325D1 true DE3774325D1 (de) | 1991-12-12 |
Family
ID=25315651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787400869T Expired - Lifetime DE3774325D1 (de) | 1986-04-17 | 1987-04-16 | Translineare statische speicherzelle mit bipolarer und mos-einrichtung. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4821235A (de) |
EP (1) | EP0246125B1 (de) |
JP (1) | JPS62254463A (de) |
KR (1) | KR870010550A (de) |
CA (1) | CA1281133C (de) |
DE (1) | DE3774325D1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5060194A (en) * | 1989-03-31 | 1991-10-22 | Kabushiki Kaisha Toshiba | Semiconductor memory device having a bicmos memory cell |
JP2601903B2 (ja) * | 1989-04-25 | 1997-04-23 | 株式会社東芝 | 半導体記憶装置 |
JP2501930B2 (ja) * | 1990-02-26 | 1996-05-29 | 株式会社東芝 | 半導体集積回路 |
JP2596180B2 (ja) * | 1990-05-28 | 1997-04-02 | 日本電気株式会社 | 半導体集積メモリ回路 |
TW260816B (de) * | 1991-12-16 | 1995-10-21 | Philips Nv | |
JP3551468B2 (ja) * | 1994-05-06 | 2004-08-04 | ソニー株式会社 | Sramメモリセルの動作方法 |
US5670803A (en) * | 1995-02-08 | 1997-09-23 | International Business Machines Corporation | Three-dimensional SRAM trench structure and fabrication method therefor |
JP3400894B2 (ja) * | 1995-07-14 | 2003-04-28 | 三菱電機株式会社 | スタティック型半導体記憶装置 |
US5894549A (en) * | 1997-12-12 | 1999-04-13 | Scenix Semiconductor, Inc. | System and method for fault detection in microcontroller program memory |
US6301146B1 (en) | 1999-12-23 | 2001-10-09 | Michael Anthony Ang | Static random access memory (RAM) systems and storage cell for same |
US6728130B1 (en) * | 2002-10-22 | 2004-04-27 | Broadcom Corporation | Very dense SRAM circuits |
US7114270B2 (en) * | 2003-01-24 | 2006-10-03 | The Louis Berkman Company | Plow mounting apparatus and method |
US6920061B2 (en) * | 2003-08-27 | 2005-07-19 | International Business Machines Corporation | Loadless NMOS four transistor dynamic dual Vt SRAM cell |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2460150C2 (de) * | 1974-12-19 | 1984-07-12 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolitisch integrierbare Speicheranordnung |
US4032902A (en) * | 1975-10-30 | 1977-06-28 | Fairchild Camera And Instrument Corporation | An improved semiconductor memory cell circuit and structure |
US4091461A (en) * | 1976-02-09 | 1978-05-23 | Rockwell International Corporation | High-speed memory cell with dual purpose data bus |
US4112511A (en) * | 1977-09-13 | 1978-09-05 | Signetics Corporation | Four transistor static bipolar memory cell using merged transistors |
US4276616A (en) * | 1979-04-23 | 1981-06-30 | Fairchild Camera & Instrument Corp. | Merged bipolar/field-effect bistable memory cell |
JPS5644194A (en) * | 1979-09-19 | 1981-04-23 | Toshiba Corp | Memory device |
JPS5724093A (en) * | 1980-07-18 | 1982-02-08 | Nec Corp | Memory cell |
US4455625A (en) * | 1981-02-24 | 1984-06-19 | International Business Machines Corporation | Random access memory cell |
JPS5837952A (ja) * | 1981-08-28 | 1983-03-05 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
US4442509A (en) * | 1981-10-27 | 1984-04-10 | Fairchild Camera & Instrument Corporation | Bit line powered translinear memory cell |
JPS5892254A (ja) * | 1981-11-27 | 1983-06-01 | Mitsubishi Electric Corp | 半導体装置 |
US4543595A (en) * | 1982-05-20 | 1985-09-24 | Fairchild Camera And Instrument Corporation | Bipolar memory cell |
JPS60134461A (ja) * | 1983-12-23 | 1985-07-17 | Hitachi Ltd | 半導体記憶装置 |
US4667311A (en) * | 1984-02-07 | 1987-05-19 | Visic, Inc. | Dynamic ram with reduced substrate noise and equal access and cycle time |
-
1986
- 1986-04-17 US US06/853,297 patent/US4821235A/en not_active Expired - Lifetime
-
1987
- 1987-04-02 KR KR870003138A patent/KR870010550A/ko not_active Application Discontinuation
- 1987-04-16 DE DE8787400869T patent/DE3774325D1/de not_active Expired - Lifetime
- 1987-04-16 EP EP87400869A patent/EP0246125B1/de not_active Expired - Lifetime
- 1987-04-16 JP JP62092114A patent/JPS62254463A/ja active Pending
- 1987-04-16 CA CA000534919A patent/CA1281133C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CA1281133C (en) | 1991-03-05 |
EP0246125B1 (de) | 1991-11-06 |
EP0246125A3 (en) | 1989-08-16 |
US4821235A (en) | 1989-04-11 |
EP0246125A2 (de) | 1987-11-19 |
KR870010550A (ko) | 1987-11-30 |
JPS62254463A (ja) | 1987-11-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |