DE3774325D1 - Translineare statische speicherzelle mit bipolarer und mos-einrichtung. - Google Patents

Translineare statische speicherzelle mit bipolarer und mos-einrichtung.

Info

Publication number
DE3774325D1
DE3774325D1 DE8787400869T DE3774325T DE3774325D1 DE 3774325 D1 DE3774325 D1 DE 3774325D1 DE 8787400869 T DE8787400869 T DE 8787400869T DE 3774325 T DE3774325 T DE 3774325T DE 3774325 D1 DE3774325 D1 DE 3774325D1
Authority
DE
Germany
Prior art keywords
translinear
bipolar
storage cell
mos device
static storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787400869T
Other languages
English (en)
Inventor
Raymond A Heald
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Application granted granted Critical
Publication of DE3774325D1 publication Critical patent/DE3774325D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
DE8787400869T 1986-04-17 1987-04-16 Translineare statische speicherzelle mit bipolarer und mos-einrichtung. Expired - Lifetime DE3774325D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/853,297 US4821235A (en) 1986-04-17 1986-04-17 Translinear static memory cell with bipolar and MOS devices

Publications (1)

Publication Number Publication Date
DE3774325D1 true DE3774325D1 (de) 1991-12-12

Family

ID=25315651

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787400869T Expired - Lifetime DE3774325D1 (de) 1986-04-17 1987-04-16 Translineare statische speicherzelle mit bipolarer und mos-einrichtung.

Country Status (6)

Country Link
US (1) US4821235A (de)
EP (1) EP0246125B1 (de)
JP (1) JPS62254463A (de)
KR (1) KR870010550A (de)
CA (1) CA1281133C (de)
DE (1) DE3774325D1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5060194A (en) * 1989-03-31 1991-10-22 Kabushiki Kaisha Toshiba Semiconductor memory device having a bicmos memory cell
JP2601903B2 (ja) * 1989-04-25 1997-04-23 株式会社東芝 半導体記憶装置
JP2501930B2 (ja) * 1990-02-26 1996-05-29 株式会社東芝 半導体集積回路
JP2596180B2 (ja) * 1990-05-28 1997-04-02 日本電気株式会社 半導体集積メモリ回路
TW260816B (de) * 1991-12-16 1995-10-21 Philips Nv
JP3551468B2 (ja) * 1994-05-06 2004-08-04 ソニー株式会社 Ｓｒａｍメモリセルの動作方法
US5670803A (en) * 1995-02-08 1997-09-23 International Business Machines Corporation Three-dimensional SRAM trench structure and fabrication method therefor
JP3400894B2 (ja) * 1995-07-14 2003-04-28 三菱電機株式会社 スタティック型半導体記憶装置
US5894549A (en) * 1997-12-12 1999-04-13 Scenix Semiconductor, Inc. System and method for fault detection in microcontroller program memory
US6301146B1 (en) 1999-12-23 2001-10-09 Michael Anthony Ang Static random access memory (RAM) systems and storage cell for same
US6728130B1 (en) * 2002-10-22 2004-04-27 Broadcom Corporation Very dense SRAM circuits
US7114270B2 (en) * 2003-01-24 2006-10-03 The Louis Berkman Company Plow mounting apparatus and method
US6920061B2 (en) * 2003-08-27 2005-07-19 International Business Machines Corporation Loadless NMOS four transistor dynamic dual Vt SRAM cell

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2460150C2 (de) * 1974-12-19 1984-07-12 Ibm Deutschland Gmbh, 7000 Stuttgart Monolitisch integrierbare Speicheranordnung
US4032902A (en) * 1975-10-30 1977-06-28 Fairchild Camera And Instrument Corporation An improved semiconductor memory cell circuit and structure
US4091461A (en) * 1976-02-09 1978-05-23 Rockwell International Corporation High-speed memory cell with dual purpose data bus
US4112511A (en) * 1977-09-13 1978-09-05 Signetics Corporation Four transistor static bipolar memory cell using merged transistors
US4276616A (en) * 1979-04-23 1981-06-30 Fairchild Camera & Instrument Corp. Merged bipolar/field-effect bistable memory cell
JPS5644194A (en) * 1979-09-19 1981-04-23 Toshiba Corp Memory device
JPS5724093A (en) * 1980-07-18 1982-02-08 Nec Corp Memory cell
US4455625A (en) * 1981-02-24 1984-06-19 International Business Machines Corporation Random access memory cell
JPS5837952A (ja) * 1981-08-28 1983-03-05 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US4442509A (en) * 1981-10-27 1984-04-10 Fairchild Camera & Instrument Corporation Bit line powered translinear memory cell
JPS5892254A (ja) * 1981-11-27 1983-06-01 Mitsubishi Electric Corp 半導体装置
US4543595A (en) * 1982-05-20 1985-09-24 Fairchild Camera And Instrument Corporation Bipolar memory cell
JPS60134461A (ja) * 1983-12-23 1985-07-17 Hitachi Ltd 半導体記憶装置
US4667311A (en) * 1984-02-07 1987-05-19 Visic, Inc. Dynamic ram with reduced substrate noise and equal access and cycle time

Also Published As

Publication number Publication date
CA1281133C (en) 1991-03-05
EP0246125B1 (de) 1991-11-06
EP0246125A3 (en) 1989-08-16
US4821235A (en) 1989-04-11
EP0246125A2 (de) 1987-11-19
KR870010550A (ko) 1987-11-30
JPS62254463A (ja) 1987-11-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition