FR2689683B1 - Dispositif semiconducteur a transistors complementaires. - Google Patents

Dispositif semiconducteur a transistors complementaires.

Info

Publication number
FR2689683B1
FR2689683B1 FR9204216A FR9204216A FR2689683B1 FR 2689683 B1 FR2689683 B1 FR 2689683B1 FR 9204216 A FR9204216 A FR 9204216A FR 9204216 A FR9204216 A FR 9204216A FR 2689683 B1 FR2689683 B1 FR 2689683B1
Authority
FR
France
Prior art keywords
semiconductor device
complementary transistors
transistors
complementary
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9204216A
Other languages
English (en)
Other versions
FR2689683A1 (fr
Inventor
Ernesto Perea (Thomson-Csf Scpi)
Daniel Delagebeaudeuf (Thomson-Csf Scpi)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thomson Composants Microondes
Original Assignee
Thomson Composants Microondes
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Composants Microondes filed Critical Thomson Composants Microondes
Priority to FR9204216A priority Critical patent/FR2689683B1/fr
Priority to CA002092895A priority patent/CA2092895A1/fr
Priority to EP93400893A priority patent/EP0565435A1/fr
Priority to JP5101835A priority patent/JPH0661441A/ja
Priority to US08/043,553 priority patent/US5367183A/en
Publication of FR2689683A1 publication Critical patent/FR2689683A1/fr
Application granted granted Critical
Publication of FR2689683B1 publication Critical patent/FR2689683B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H01L29/365—Planar doping, e.g. atomic-plane doping, delta-doping
FR9204216A 1992-04-07 1992-04-07 Dispositif semiconducteur a transistors complementaires. Expired - Fee Related FR2689683B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR9204216A FR2689683B1 (fr) 1992-04-07 1992-04-07 Dispositif semiconducteur a transistors complementaires.
CA002092895A CA2092895A1 (fr) 1992-04-07 1993-03-29 Dispositif semiconducteur a transistors complementaires
EP93400893A EP0565435A1 (fr) 1992-04-07 1993-04-06 Dispositif semiconducteur à transistors complémentaires
JP5101835A JPH0661441A (ja) 1992-04-07 1993-04-06 コンプリメンタリのトランジスタを有する半導体ディバイス
US08/043,553 US5367183A (en) 1992-04-07 1993-04-07 Semiconductor device with complementary transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9204216A FR2689683B1 (fr) 1992-04-07 1992-04-07 Dispositif semiconducteur a transistors complementaires.

Publications (2)

Publication Number Publication Date
FR2689683A1 FR2689683A1 (fr) 1993-10-08
FR2689683B1 true FR2689683B1 (fr) 1994-05-20

Family

ID=9428567

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9204216A Expired - Fee Related FR2689683B1 (fr) 1992-04-07 1992-04-07 Dispositif semiconducteur a transistors complementaires.

Country Status (5)

Country Link
US (1) US5367183A (fr)
EP (1) EP0565435A1 (fr)
JP (1) JPH0661441A (fr)
CA (1) CA2092895A1 (fr)
FR (1) FR2689683B1 (fr)

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US5852316A (en) * 1994-08-31 1998-12-22 Motorola, Inc. Complementary heterojunction amplifier
JP3751398B2 (ja) * 1997-03-13 2006-03-01 富士通株式会社 化合物半導体装置
JP3107031B2 (ja) * 1998-03-06 2000-11-06 日本電気株式会社 電界効果トランジスタ
CN1147935C (zh) * 2000-12-18 2004-04-28 黄敞 互补偶载场效应晶体管及其片上系统
JP2010056250A (ja) * 2008-08-27 2010-03-11 Nec Electronics Corp 半導体装置及び半導体装置の製造方法
JP5629714B2 (ja) 2012-03-19 2014-11-26 トヨタ自動車株式会社 半導体装置
KR101922123B1 (ko) 2012-09-28 2018-11-26 삼성전자주식회사 반도체소자 및 그 제조방법
US9236444B2 (en) * 2013-05-03 2016-01-12 Samsung Electronics Co., Ltd. Methods of fabricating quantum well field effect transistors having multiple delta doped layers
JP2017533574A (ja) 2014-09-18 2017-11-09 インテル・コーポレーション シリコンｃｍｏｓ互換性半導体装置における欠陥伝播制御のための傾斜側壁カット面を有するウルツ鉱ヘテロエピタキシャル構造物
EP3198649A4 (fr) 2014-09-25 2018-05-16 Intel Corporation Structures de dispositif d'épitaxie iii-n sur des structures mesa de silicium autoportants
EP3221886A4 (fr) * 2014-11-18 2018-07-11 Intel Corporation Circuits cmos utilisant des transistors au nitrure de gallium à canal n et à canal p
KR102423219B1 (ko) 2014-12-18 2022-07-20 인텔 코포레이션 N-채널 갈륨 질화물 트랜지스터들
KR102346591B1 (ko) 2015-05-19 2022-01-04 인텔 코포레이션 융기된 도핑 결정성 구조체들을 가진 반도체 디바이스들
WO2016209283A1 (fr) 2015-06-26 2016-12-29 Intel Corporation Structures hétéroépitaxiales à matériau d'interface de substrat stable à haute température
CN109414241A (zh) * 2016-03-10 2019-03-01 艾皮乔尼克控股有限公司 用在超敏传声器中的微电子传感器
WO2019066953A1 (fr) 2017-09-29 2019-04-04 Intel Corporation Dispositifs à nitrure du groupe iii (iii-n) à résistance de contact réduite et leurs procédés de fabrication
CN113035934B (zh) * 2021-03-12 2022-07-05 浙江集迈科微电子有限公司 GaN基HEMT器件及其制备方法

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FR2284987A1 (fr) * 1974-09-10 1976-04-09 Thomson Csf Structure semi-conductrice particuliere de diode a injection thermoionique a faible bruit
FR2379169A1 (fr) * 1977-01-28 1978-08-25 Thomson Csf Diode a avalanche constituee par une hetero-jonction et oscillateur en mode dit " a temps de transit " comportant une telle diode
FR2399740A1 (fr) * 1977-08-02 1979-03-02 Thomson Csf Diode a avalanche a hetero-jonction, et oscillateur en mode dit " a temps de transit " utilisant une telle diode
FR2465318A1 (fr) * 1979-09-10 1981-03-20 Thomson Csf Transistor a effet de champ a frequence de coupure elevee
FR2529413A1 (fr) * 1982-06-29 1983-12-30 Thomson Csf Bascule logique, fonctionnant du continu a 10 ghz, et diviseur de frequence comportant cette bascule
US4583105A (en) * 1982-12-30 1986-04-15 International Business Machines Corporation Double heterojunction FET with ohmic semiconductor gate and controllable low threshold voltage
US5060234A (en) * 1984-11-19 1991-10-22 Max-Planck Gesellschaft Zur Forderung Der Wissenschaften Injection laser with at least one pair of monoatomic layers of doping atoms
US5216260A (en) * 1984-11-19 1993-06-01 Max-Planck Gesellschaft Zur Foerderung Der Wissenschaften E.V. Optically bistable semiconductor device with pairs of monoatomic layers separated by intrinsic layers
JPS61276269A (ja) * 1985-05-30 1986-12-06 Fujitsu Ltd ヘテロ接合型電界効果トランジスタ
US4729000A (en) * 1985-06-21 1988-03-01 Honeywell Inc. Low power AlGaAs/GaAs complementary FETs incorporating InGaAs n-channel gates
JPH0695532B2 (ja) * 1985-10-16 1994-11-24 富士通株式会社 半導体装置
US4780748A (en) * 1986-06-06 1988-10-25 American Telephone & Telegraph Company, At&T Bell Laboratories Field-effect transistor having a delta-doped ohmic contact
FR2608318B1 (fr) * 1986-12-16 1989-06-16 Thomson Semiconducteurs Dispositif semi-conducteur a faible bruit en hyperfrequence, monte dans un boitier
FR2619250B1 (fr) * 1987-08-05 1990-05-11 Thomson Hybrides Microondes Transistor hyperfrequence a double heterojonction
EP0312237A3 (fr) * 1987-10-13 1989-10-25 AT&T Corp. Enrichissement de la charge d'interface dans une hétérostructure à dopage delta
US4830980A (en) * 1988-04-22 1989-05-16 Hughes Aircraft Company Making complementary integrated p-MODFET and n-MODFET
US5130766A (en) * 1988-08-04 1992-07-14 Fujitsu Limited Quantum interference type semiconductor device
US4994868A (en) * 1988-12-06 1991-02-19 Itt Corporation Heterojunction confined channel FET
US5068756A (en) * 1989-02-16 1991-11-26 Texas Instruments Incorporated Integrated circuit composed of group III-V compound field effect and bipolar semiconductors
US5031012A (en) * 1989-04-21 1991-07-09 At&T Bell Laboratories Devices having asymmetric delta-doping
FR2648643B1 (fr) * 1989-06-20 1991-08-30 Thomson Composants Microondes Circuit d'interface entre deux circuits numeriques de natures differentes
FR2648971B1 (fr) * 1989-06-23 1991-09-06 Thomson Composants Microondes Circuit d'interface de sortie entre deux circuits numeriques de natures differentes
JP2817995B2 (ja) * 1990-03-15 1998-10-30 富士通株式会社 ▲ｉｉｉ▼―▲ｖ▼族化合物半導体ヘテロ構造基板および▲ｉｉｉ▼―▲ｖ▼族化合物ヘテロ構造半導体装置
US5093695A (en) * 1990-05-18 1992-03-03 At&T Bell Laboratories Controllable semiconductor modulator having interleaved contacts
US5223724A (en) * 1990-07-31 1993-06-29 At & T Bell Laboratories Multiple channel high electron mobility transistor
GB2248966A (en) * 1990-10-19 1992-04-22 Philips Electronic Associated Field effect semiconductor devices
US5151758A (en) * 1991-02-20 1992-09-29 Comsat Planar-doped valley field effect transistor (PDVFET)

Also Published As

Publication number Publication date
US5367183A (en) 1994-11-22
JPH0661441A (ja) 1994-03-04
EP0565435A1 (fr) 1993-10-13
CA2092895A1 (fr) 1993-10-08
FR2689683A1 (fr) 1993-10-08

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