FR2379169A1 - Diode a avalanche constituee par une hetero-jonction et oscillateur en mode dit " a temps de transit " comportant une telle diode - Google Patents
Diode a avalanche constituee par une hetero-jonction et oscillateur en mode dit " a temps de transit " comportant une telle diodeInfo
- Publication number
- FR2379169A1 FR2379169A1 FR7702454A FR7702454A FR2379169A1 FR 2379169 A1 FR2379169 A1 FR 2379169A1 FR 7702454 A FR7702454 A FR 7702454A FR 7702454 A FR7702454 A FR 7702454A FR 2379169 A1 FR2379169 A1 FR 2379169A1
- Authority
- FR
- France
- Prior art keywords
- diode
- avalanche
- junction
- transit time
- hetero
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910017214 AsGa Inorganic materials 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
L'invention concerne une diode à avalanche destinée à fonctionner en mode << à temps de transit >> (mode IMPATT de la terminologie anglo-saxonne). Pour améliorer le rendement, on cherche à avoir une zone d'avalanche limitée à une région de faible épaisseur par rapport à l'épaisseur totale de la jonction semi-conductrice. La diode selon l'invention est une jonction Ge/AsGa, le germanium monocristallin étant dopé P et l'arséniure de gallium monocristallin étant dopé N. Entre les concentrations de dopants K1 (Ge) et K 2 (AsGa) on doit avoir la relation : K2 > 6,3.10**-6 (K1 )** 1,3 (K1 et K2 : At/cm**3) pour que l'avalanche (zone L A ) n'ait lieur que dans le germanium. Application à la génération d'hyperfréquences.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7702454A FR2379169A1 (fr) | 1977-01-28 | 1977-01-28 | Diode a avalanche constituee par une hetero-jonction et oscillateur en mode dit " a temps de transit " comportant une telle diode |
US05/871,881 US4176366A (en) | 1977-01-28 | 1978-01-24 | Avalanche transit time diode with heterojunction structure |
GB3068/78A GB1579991A (en) | 1977-01-28 | 1978-01-25 | Avalanche transit time diode with heterojunction structure |
JP821378A JPS5396685A (en) | 1977-01-28 | 1978-01-27 | Electron avalanche transit time diode |
DE19782803612 DE2803612A1 (de) | 1977-01-28 | 1978-01-27 | Lawinen-laufzeit-diode und damit ausgestatteter oszillator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7702454A FR2379169A1 (fr) | 1977-01-28 | 1977-01-28 | Diode a avalanche constituee par une hetero-jonction et oscillateur en mode dit " a temps de transit " comportant une telle diode |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2379169A1 true FR2379169A1 (fr) | 1978-08-25 |
FR2379169B1 FR2379169B1 (fr) | 1982-01-08 |
Family
ID=9186032
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7702454A Granted FR2379169A1 (fr) | 1977-01-28 | 1977-01-28 | Diode a avalanche constituee par une hetero-jonction et oscillateur en mode dit " a temps de transit " comportant une telle diode |
Country Status (5)
Country | Link |
---|---|
US (1) | US4176366A (fr) |
JP (1) | JPS5396685A (fr) |
DE (1) | DE2803612A1 (fr) |
FR (1) | FR2379169A1 (fr) |
GB (1) | GB1579991A (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4353081A (en) * | 1980-01-29 | 1982-10-05 | Bell Telephone Laboratories, Incorporated | Graded bandgap rectifying semiconductor devices |
DE3725214A1 (de) * | 1986-09-27 | 1988-03-31 | Licentia Gmbh | Impatt-diode |
US5168328A (en) * | 1990-07-03 | 1992-12-01 | Litton Systems, Inc. | Heterojunction impatt diode |
FR2689683B1 (fr) * | 1992-04-07 | 1994-05-20 | Thomson Composants Microondes | Dispositif semiconducteur a transistors complementaires. |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3466512A (en) * | 1967-05-29 | 1969-09-09 | Bell Telephone Labor Inc | Impact avalanche transit time diodes with heterojunction structure |
AU7731575A (en) * | 1974-01-18 | 1976-07-15 | Nat Patent Dev Corp | Heterojunction devices |
-
1977
- 1977-01-28 FR FR7702454A patent/FR2379169A1/fr active Granted
-
1978
- 1978-01-24 US US05/871,881 patent/US4176366A/en not_active Expired - Lifetime
- 1978-01-25 GB GB3068/78A patent/GB1579991A/en not_active Expired
- 1978-01-27 DE DE19782803612 patent/DE2803612A1/de not_active Withdrawn
- 1978-01-27 JP JP821378A patent/JPS5396685A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US4176366A (en) | 1979-11-27 |
GB1579991A (en) | 1980-11-26 |
DE2803612A1 (de) | 1978-08-03 |
FR2379169B1 (fr) | 1982-01-08 |
JPS5396685A (en) | 1978-08-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |