DE69317728D1 - Schaltungsanordnung zum Steuern eines MOS-Feldeffekttransistors - Google Patents
Schaltungsanordnung zum Steuern eines MOS-FeldeffekttransistorsInfo
- Publication number
- DE69317728D1 DE69317728D1 DE69317728T DE69317728T DE69317728D1 DE 69317728 D1 DE69317728 D1 DE 69317728D1 DE 69317728 T DE69317728 T DE 69317728T DE 69317728 T DE69317728 T DE 69317728T DE 69317728 D1 DE69317728 D1 DE 69317728D1
- Authority
- DE
- Germany
- Prior art keywords
- controlling
- effect transistor
- circuit arrangement
- mos field
- mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Electronic Switches (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE69317728T DE69317728T2 (de) | 1992-11-03 | 1993-11-03 | Schaltungsanordnung zum Steuern eines MOS-Feldeffekttransistors |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4237125 | 1992-11-03 | ||
DE69317728T DE69317728T2 (de) | 1992-11-03 | 1993-11-03 | Schaltungsanordnung zum Steuern eines MOS-Feldeffekttransistors |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69317728D1 true DE69317728D1 (de) | 1998-05-07 |
DE69317728T2 DE69317728T2 (de) | 1998-08-20 |
Family
ID=6472010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69317728T Expired - Lifetime DE69317728T2 (de) | 1992-11-03 | 1993-11-03 | Schaltungsanordnung zum Steuern eines MOS-Feldeffekttransistors |
Country Status (5)
Country | Link |
---|---|
US (1) | US5548240A (de) |
EP (1) | EP0596475B1 (de) |
JP (1) | JPH077404A (de) |
KR (1) | KR940012848A (de) |
DE (1) | DE69317728T2 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69528967D1 (de) * | 1995-05-31 | 2003-01-09 | St Microelectronics Srl | Transistorstromgeneratorstufe für integrierte Analogschaltungen |
DE19527736C1 (de) * | 1995-07-28 | 1996-11-14 | Texas Instruments Deutschland | Schaltungsanordnung zur Ansteuerung eines dem Speisekreis einer elektrischen Last zugeordneten MOS-Feldeffekttransistors |
US6127746A (en) * | 1996-10-21 | 2000-10-03 | International Rectifier Corp. | Method of controlling the switching DI/DT and DV/DT of a MOS-gated power transistor |
US6100738A (en) * | 1998-12-22 | 2000-08-08 | Philips Electronics North America Corporation | High-speed current switch with complementary stages |
JP2004072424A (ja) * | 2002-08-06 | 2004-03-04 | Denso Corp | Mosゲートトランジスタのゲート駆動回路 |
JP2004229203A (ja) | 2003-01-27 | 2004-08-12 | Ricoh Co Ltd | 半導体集積回路および該半導体集積回路を用いた音響素子ドライブアンプ |
US6952120B2 (en) * | 2004-02-12 | 2005-10-04 | Texas Instruments Incorporated | Versatile system for controlling driver signal timing |
EP1856802B1 (de) | 2005-02-25 | 2009-07-15 | Nxp B.V. | Flankensteilheitssteuerung für i2c-bus-anwendungen |
TW200820609A (en) * | 2006-03-31 | 2008-05-01 | Nxp Bv | Method and system for signal control |
US7966438B2 (en) * | 2007-09-27 | 2011-06-21 | Honeywell International Inc. | Two-wire communications bus system |
US7936189B2 (en) * | 2008-12-04 | 2011-05-03 | Stmicroelectronics S.R.L. | Driver circuit and method for reducing electromagnetic interference |
CA2983911C (en) * | 2010-02-16 | 2020-04-21 | Dynamics Inc. | Systems and methods for drive circuits for dynamic magnetic stripe communications devices |
JP5197658B2 (ja) * | 2010-03-10 | 2013-05-15 | 株式会社東芝 | 駆動回路 |
US8514008B2 (en) * | 2010-07-28 | 2013-08-20 | Qualcomm, Incorporated | RF isolation switch circuit |
WO2012132215A1 (ja) * | 2011-03-31 | 2012-10-04 | ルネサスエレクトロニクス株式会社 | シリアル通信装置 |
JP2013013044A (ja) * | 2011-05-31 | 2013-01-17 | Sanken Electric Co Ltd | ゲートドライブ回路 |
EP2665172B1 (de) * | 2012-05-18 | 2016-10-12 | Silergy Corp. | Sanft schaltender Schaltkreis |
US8975929B2 (en) * | 2013-06-20 | 2015-03-10 | Stmicroelectronics International N.V. | High voltage tolerant input buffer |
US10520971B2 (en) * | 2017-07-18 | 2019-12-31 | Texas Instruments Incorporated | Current sink with negative voltage tolerance |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0053709B1 (de) * | 1980-12-04 | 1985-03-06 | Siemens Aktiengesellschaft | Schaltungsanordnung zum Ansteuern mindestens eines Leistungs-FET |
US4481434A (en) * | 1982-06-21 | 1984-11-06 | Eaton Corporation | Self regenerative fast gate turn-off FET |
JPS6135616A (ja) * | 1984-07-27 | 1986-02-20 | Tdk Corp | 電界効果トランジスタ駆動回路 |
NL8800234A (nl) * | 1988-02-01 | 1989-09-01 | Philips Nv | Geintegreerde schakeling met logische circuits en ten minste een push-pull-trap. |
DE4131783C1 (de) * | 1991-09-24 | 1993-02-04 | Siemens Ag, 8000 Muenchen, De | |
US5204562A (en) * | 1991-11-29 | 1993-04-20 | Motorola, Inc. | Turn off delay reduction circuit and method |
US5264736A (en) * | 1992-04-28 | 1993-11-23 | Raytheon Company | High frequency resonant gate drive for a power MOSFET |
US5321313A (en) * | 1993-01-07 | 1994-06-14 | Texas Instruments Incorporated | Controlled power MOSFET switch-off circuit |
-
1993
- 1993-11-02 JP JP5274654A patent/JPH077404A/ja active Pending
- 1993-11-03 DE DE69317728T patent/DE69317728T2/de not_active Expired - Lifetime
- 1993-11-03 EP EP93117823A patent/EP0596475B1/de not_active Expired - Lifetime
- 1993-11-03 KR KR1019930023182A patent/KR940012848A/ko not_active Application Discontinuation
-
1995
- 1995-03-01 US US08/397,013 patent/US5548240A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH077404A (ja) | 1995-01-10 |
EP0596475B1 (de) | 1998-04-01 |
KR940012848A (ko) | 1994-06-24 |
DE69317728T2 (de) | 1998-08-20 |
US5548240A (en) | 1996-08-20 |
EP0596475A3 (de) | 1994-11-23 |
EP0596475A2 (de) | 1994-05-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |