DE69317728T2 - Schaltungsanordnung zum Steuern eines MOS-Feldeffekttransistors - Google Patents

Schaltungsanordnung zum Steuern eines MOS-Feldeffekttransistors

Info

Publication number
DE69317728T2
DE69317728T2 DE69317728T DE69317728T DE69317728T2 DE 69317728 T2 DE69317728 T2 DE 69317728T2 DE 69317728 T DE69317728 T DE 69317728T DE 69317728 T DE69317728 T DE 69317728T DE 69317728 T2 DE69317728 T2 DE 69317728T2
Authority
DE
Germany
Prior art keywords
controlling
effect transistor
circuit arrangement
mos field
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69317728T
Other languages
English (en)
Other versions
DE69317728D1 (de
Inventor
Erich Bayer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Deutschland GmbH
Original Assignee
Texas Instruments Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Deutschland GmbH filed Critical Texas Instruments Deutschland GmbH
Priority to DE69317728T priority Critical patent/DE69317728T2/de
Application granted granted Critical
Publication of DE69317728D1 publication Critical patent/DE69317728D1/de
Publication of DE69317728T2 publication Critical patent/DE69317728T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Electronic Switches (AREA)
DE69317728T 1992-11-03 1993-11-03 Schaltungsanordnung zum Steuern eines MOS-Feldeffekttransistors Expired - Lifetime DE69317728T2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE69317728T DE69317728T2 (de) 1992-11-03 1993-11-03 Schaltungsanordnung zum Steuern eines MOS-Feldeffekttransistors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4237125 1992-11-03
DE69317728T DE69317728T2 (de) 1992-11-03 1993-11-03 Schaltungsanordnung zum Steuern eines MOS-Feldeffekttransistors

Publications (2)

Publication Number Publication Date
DE69317728D1 DE69317728D1 (de) 1998-05-07
DE69317728T2 true DE69317728T2 (de) 1998-08-20

Family

ID=6472010

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69317728T Expired - Lifetime DE69317728T2 (de) 1992-11-03 1993-11-03 Schaltungsanordnung zum Steuern eines MOS-Feldeffekttransistors

Country Status (5)

Country Link
US (1) US5548240A (de)
EP (1) EP0596475B1 (de)
JP (1) JPH077404A (de)
KR (1) KR940012848A (de)
DE (1) DE69317728T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0745921B1 (de) * 1995-05-31 2002-11-27 STMicroelectronics S.r.l. Transistorstromgeneratorstufe für integrierte Analogschaltungen
DE19527736C1 (de) * 1995-07-28 1996-11-14 Texas Instruments Deutschland Schaltungsanordnung zur Ansteuerung eines dem Speisekreis einer elektrischen Last zugeordneten MOS-Feldeffekttransistors
US6127746A (en) * 1996-10-21 2000-10-03 International Rectifier Corp. Method of controlling the switching DI/DT and DV/DT of a MOS-gated power transistor
US6100738A (en) * 1998-12-22 2000-08-08 Philips Electronics North America Corporation High-speed current switch with complementary stages
JP2004072424A (ja) * 2002-08-06 2004-03-04 Denso Corp Ｍｏｓゲートトランジスタのゲート駆動回路
JP2004229203A (ja) 2003-01-27 2004-08-12 Ricoh Co Ltd 半導体集積回路および該半導体集積回路を用いた音響素子ドライブアンプ
US6952120B2 (en) * 2004-02-12 2005-10-04 Texas Instruments Incorporated Versatile system for controlling driver signal timing
US7733142B2 (en) 2005-02-25 2010-06-08 Nxp B.V. Edge rate control for 12C bus applications
TW200820609A (en) * 2006-03-31 2008-05-01 Nxp Bv Method and system for signal control
US7966438B2 (en) * 2007-09-27 2011-06-21 Honeywell International Inc. Two-wire communications bus system
US7936189B2 (en) * 2008-12-04 2011-05-03 Stmicroelectronics S.R.L. Driver circuit and method for reducing electromagnetic interference
US8602312B2 (en) * 2010-02-16 2013-12-10 Dynamics Inc. Systems and methods for drive circuits for dynamic magnetic stripe communications devices
JP5197658B2 (ja) * 2010-03-10 2013-05-15 株式会社東芝 駆動回路
US8514008B2 (en) * 2010-07-28 2013-08-20 Qualcomm, Incorporated RF isolation switch circuit
EP2693640B1 (de) * 2011-03-31 2017-09-13 Renesas Electronics Corporation Vorrichtung für serielle kommunikation
JP2013013044A (ja) * 2011-05-31 2013-01-17 Sanken Electric Co Ltd ゲートドライブ回路
EP2665172B1 (de) * 2012-05-18 2016-10-12 Silergy Corp. Sanft schaltender Schaltkreis
US8975929B2 (en) * 2013-06-20 2015-03-10 Stmicroelectronics International N.V. High voltage tolerant input buffer
US10520971B2 (en) * 2017-07-18 2019-12-31 Texas Instruments Incorporated Current sink with negative voltage tolerance

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0053709B1 (de) * 1980-12-04 1985-03-06 Siemens Aktiengesellschaft Schaltungsanordnung zum Ansteuern mindestens eines Leistungs-FET
US4481434A (en) * 1982-06-21 1984-11-06 Eaton Corporation Self regenerative fast gate turn-off FET
JPS6135616A (ja) * 1984-07-27 1986-02-20 Tdk Corp 電界効果トランジスタ駆動回路
NL8800234A (nl) * 1988-02-01 1989-09-01 Philips Nv Geintegreerde schakeling met logische circuits en ten minste een push-pull-trap.
DE4131783C1 (de) * 1991-09-24 1993-02-04 Siemens Ag, 8000 Muenchen, De
US5204562A (en) * 1991-11-29 1993-04-20 Motorola, Inc. Turn off delay reduction circuit and method
US5264736A (en) * 1992-04-28 1993-11-23 Raytheon Company High frequency resonant gate drive for a power MOSFET
US5321313A (en) * 1993-01-07 1994-06-14 Texas Instruments Incorporated Controlled power MOSFET switch-off circuit

Also Published As

Publication number Publication date
US5548240A (en) 1996-08-20
JPH077404A (ja) 1995-01-10
EP0596475A3 (de) 1994-11-23
EP0596475A2 (de) 1994-05-11
EP0596475B1 (de) 1998-04-01
KR940012848A (ko) 1994-06-24
DE69317728D1 (de) 1998-05-07

Similar Documents

Publication Publication Date Title
DE69317728D1 (de) Schaltungsanordnung zum Steuern eines MOS-Feldeffekttransistors
DE59301809D1 (de) Schaltungsanordnung zum ansteuern eines mos-feldeffekttransistors
DE69600911T2 (de) Isolierte Gate-Transistor-Ansteuerschaltung
DE69228278T2 (de) MOS-Feldeffekttransistor
DE69213702D1 (de) Feldeffekttransistor
DE69330542T2 (de) Halbleitertransistor
DE69325673D1 (de) Feldeffekttransistor
DE69321171D1 (de) Gate-Treiberschaltung für einen MOS-Leistungstransistor
DE69410067T2 (de) Transistorschaltung
DE69311921D1 (de) Anordnung zum Ein- und Ausschalten eines Leistungstransistors
EP0482726A3 (en) Heterojunction field-effect transistor
DE69317206T2 (de) Schaltungsanordnung zum kontrollierten Abschalten eines MOS-Feldeffekttransistors
DE69306494D1 (de) Transistorschaltung zum Halten des Maximal-/Minimalwertes eines Signales
EP0363670A3 (en) Mos field-effect transistor
ITTO940083A0 (it) Dispositivo di chiusura di uno scarico.
DE69332112T2 (de) Verbesserter biolarer Transistor
GB9127093D0 (en) Field-effect transistor
DE59107022D1 (de) Schaltungsanordnung zum Kompensieren des Steuerstromes eines Transistors.
DE69320464T2 (de) Schaltungsanordnung zur kontrolle der sättigung eines transistors.
DE69320156D1 (de) Verbesserte Anordnung für Transistorbauteil
DE69332443D1 (de) Steuervorrichtung für Halbleitervorrichtung mit doppeltem Gate
DE69429970T2 (de) Transistorschaltung
DE69417038D1 (de) Gerät zum öffnen von kartons
DE69415923D1 (de) Steuervorrichtung für Halbleitervorrichtung mit doppeltem Gate
EP0524347A3 (en) Control method for a field-effect transistor, its arrangement and its application

Legal Events

Date Code Title Description
8364 No opposition during term of opposition