DE69600911T2 - Isolierte Gate-Transistor-Ansteuerschaltung - Google Patents

Isolierte Gate-Transistor-Ansteuerschaltung

Info

Publication number
DE69600911T2
DE69600911T2 DE69600911T DE69600911T DE69600911T2 DE 69600911 T2 DE69600911 T2 DE 69600911T2 DE 69600911 T DE69600911 T DE 69600911T DE 69600911 T DE69600911 T DE 69600911T DE 69600911 T2 DE69600911 T2 DE 69600911T2
Authority
DE
Germany
Prior art keywords
drive circuit
gate transistor
isolated gate
transistor drive
isolated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69600911T
Other languages
English (en)
Other versions
DE69600911D1 (de
Inventor
Satoru Chikai
Haruyoshi Mori
Tomohiro Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69600911D1 publication Critical patent/DE69600911D1/de
Publication of DE69600911T2 publication Critical patent/DE69600911T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/0406Modifications for accelerating switching in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036Means reducing energy consumption
DE69600911T 1995-08-25 1996-08-21 Isolierte Gate-Transistor-Ansteuerschaltung Expired - Fee Related DE69600911T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21719195A JP3373704B2 (ja) 1995-08-25 1995-08-25 絶縁ゲートトランジスタ駆動回路

Publications (2)

Publication Number Publication Date
DE69600911D1 DE69600911D1 (de) 1998-12-10
DE69600911T2 true DE69600911T2 (de) 1999-05-12

Family

ID=16700290

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69600911T Expired - Fee Related DE69600911T2 (de) 1995-08-25 1996-08-21 Isolierte Gate-Transistor-Ansteuerschaltung

Country Status (5)

Country Link
US (1) US5808504A (de)
EP (1) EP0762652B1 (de)
JP (1) JP3373704B2 (de)
KR (1) KR100218220B1 (de)
DE (1) DE69600911T2 (de)

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3421507B2 (ja) * 1996-07-05 2003-06-30 三菱電機株式会社 半導体素子の駆動回路
DE19633367A1 (de) * 1996-08-19 1998-03-26 Siemens Ag Ansteuerschaltung für ein Feldeffekt gesteuertes Halbleiterbauelement
JP3560432B2 (ja) * 1996-12-18 2004-09-02 株式会社日立製作所 Mosトランジスタの駆動装置
JP3462032B2 (ja) * 1997-03-04 2003-11-05 株式会社東芝 電力変換装置
DE19717715C2 (de) * 1997-04-18 2001-10-04 Daimler Chrysler Ag Verfahren zum Ansteuern eines feldgesteuerten Leistungshalbleiterschalters
JPH1155936A (ja) * 1997-07-29 1999-02-26 Mitsubishi Electric Corp 絶縁ゲートトランジスタの駆動回路
US6094087A (en) * 1997-07-30 2000-07-25 Lucent Technologies Inc. Gate drive circuit for isolated gate devices and method of operation thereof
US5963072A (en) * 1997-12-12 1999-10-05 Automotive Systems Laboratory, Inc. Discrete programmable one-shot timed pulse circuit
JP3447949B2 (ja) * 1998-03-31 2003-09-16 株式会社東芝 絶縁ゲート型半導体素子のゲート駆動回路、電力変換装置
JP3650264B2 (ja) * 1998-05-11 2005-05-18 三菱電機株式会社 半導体素子の駆動回路
JP3743168B2 (ja) * 1998-07-15 2006-02-08 株式会社明電舎 スイッチング制御回路
FI105509B (fi) * 1998-08-12 2000-08-31 Abb Industry Oy Ohjainpiiri
SE516083C2 (sv) * 1998-08-12 2001-11-12 Bombardier Transp Gmbh Anordning för styrning av spännings-laddningsstyrda krafthalvledarelement
DE19849097A1 (de) * 1998-10-24 2000-04-27 Abb Daimler Benz Transp Verfahren zur Schaltzustandsüberwachung eines IGBT und Vorrichtung zur Durchführung des Verfahrens
KR100433799B1 (ko) 1998-12-03 2004-06-04 가부시키가이샤 히타치세이사쿠쇼 전압구동형 스위칭 소자의 게이트 구동회로
KR100423717B1 (ko) 2000-02-25 2004-03-18 미쓰비시덴키 가부시키가이샤 파워모듈
EP1299950B1 (de) * 2000-07-13 2008-05-21 CT-Concept Technologie AG Verfahren und vorrichtung zur zustandsabhängigen regelung des transienten verhaltens von leistungshalbleiterschaltern
JP4846106B2 (ja) * 2001-02-16 2011-12-28 三菱電機株式会社 電界効果型半導体装置及びその製造方法
JP3812353B2 (ja) * 2001-03-19 2006-08-23 株式会社日立製作所 半導体電力変換装置
US6621321B2 (en) * 2001-06-20 2003-09-16 Analog Devices, Inc. Circuit for conditioning output waveform
US7061195B2 (en) * 2002-07-25 2006-06-13 International Rectifier Corporation Global closed loop control system with dv/dt control and EMI/switching loss reduction
JP4044861B2 (ja) * 2003-04-03 2008-02-06 三菱電機株式会社 電力変換装置およびその電力変換装置を備える電力変換システム装置
CN100429863C (zh) * 2003-11-06 2008-10-29 陈亚宁 单端变换器中绝缘栅功率管的隔离驱动电路
DE602004009524T2 (de) * 2004-01-22 2008-07-31 Stmicroelectronics S.R.L., Agrate Brianza Dynamische Steuerung eines Leistungstransistors bei Hochspannungsanwendungen
ATE487277T1 (de) * 2005-04-22 2010-11-15 Ebm Papst Mulfingen Gmbh & Co Schaltungsanordnung zur ansteuerung eines elektrischen leistungsschalters auf hohem spannungspotenzial
JP2007228447A (ja) * 2006-02-27 2007-09-06 Hitachi Ltd スイッチング素子のゲート駆動回路
JP2007288094A (ja) * 2006-04-20 2007-11-01 Fuji Electric Device Technology Co Ltd Igbtとそれを駆動するゲート駆動回路
JP5057713B2 (ja) * 2006-07-03 2012-10-24 株式会社東芝 スイッチング素子駆動回路
JP4830829B2 (ja) * 2006-12-06 2011-12-07 株式会社デンソー 絶縁ゲートトランジスタの駆動回路
DE102007049789B4 (de) * 2007-10-17 2010-04-22 Continental Automotive Gmbh Schaltungsanordnung
US8299820B2 (en) * 2008-09-30 2012-10-30 Infineon Technologies Austria Ag Circuit including a resistor arrangement for actuation of a transistor
US8829946B2 (en) 2008-09-30 2014-09-09 Infineon Technologies Austria Ag Circuit for driving a transistor dependent on a measurement signal
WO2011033733A1 (ja) 2009-09-15 2011-03-24 三菱電機株式会社 ゲート駆動回路
JP5377756B2 (ja) * 2010-04-14 2013-12-25 本田技研工業株式会社 短絡保護方法
KR20130011812A (ko) 2011-07-22 2013-01-30 엘에스산전 주식회사 Igbt 구동 방법
US8963377B2 (en) 2012-01-09 2015-02-24 Eagle Harbor Technologies Inc. Efficient IGBT switching
JP5549685B2 (ja) 2012-01-10 2014-07-16 株式会社デンソー スイッチング素子の駆動装置
JP5541295B2 (ja) 2012-01-12 2014-07-09 株式会社デンソー スイッチング素子の駆動回路
JP5712986B2 (ja) * 2012-08-28 2015-05-07 株式会社デンソー 駆動対象スイッチング素子の駆動回路
CN103684378B (zh) * 2012-08-29 2017-05-24 英飞凌科技奥地利有限公司 用于驱动晶体管的电路
GB2508129B (en) * 2012-09-19 2020-02-26 Nidec Control Techniques Ltd Semiconductor device driving unit
US20140168829A1 (en) * 2012-12-18 2014-06-19 Eaton Corporation Gate Drive Circuits that Control Electromagnetic Interference and Switching Losses and Related Methods
CN103905019B (zh) * 2012-12-31 2017-12-12 比亚迪股份有限公司 一种igbt模块门极驱动电阻等效调节电路
US9655221B2 (en) 2013-08-19 2017-05-16 Eagle Harbor Technologies, Inc. High frequency, repetitive, compact toroid-generation for radiation production
US10892140B2 (en) 2018-07-27 2021-01-12 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US10978955B2 (en) 2014-02-28 2021-04-13 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US10020800B2 (en) 2013-11-14 2018-07-10 Eagle Harbor Technologies, Inc. High voltage nanosecond pulser with variable pulse width and pulse repetition frequency
EP4210223A1 (de) 2013-11-14 2023-07-12 Eagle Harbor Technologies, Inc. Hochspannungs-nanosekunden-impulsgeber
US11539352B2 (en) 2013-11-14 2022-12-27 Eagle Harbor Technologies, Inc. Transformer resonant converter
JP2015122676A (ja) * 2013-12-25 2015-07-02 ボッシュ株式会社 駆動回路
US10790816B2 (en) 2014-01-27 2020-09-29 Eagle Harbor Technologies, Inc. Solid-state replacement for tube-based modulators
WO2015131199A1 (en) 2014-02-28 2015-09-03 Eagle Harbor Technologies, Inc. Galvanically isolated output variable pulse generator disclosure
US10483089B2 (en) 2014-02-28 2019-11-19 Eagle Harbor Technologies, Inc. High voltage resistive output stage circuit
DK2942870T3 (en) * 2014-05-09 2018-10-22 Abb Schweiz Ag Device and method for a power semiconductor contact
US10491095B2 (en) 2014-10-06 2019-11-26 Ford Global Technologies, Llc Dynamic IGBT gate drive for vehicle traction inverters
JP6478789B2 (ja) * 2015-04-27 2019-03-06 ルネサスエレクトロニクス株式会社 半導体装置、電力制御用半導体装置、車載用電子制御ユニット及びそれを備えた車両
US11542927B2 (en) 2015-05-04 2023-01-03 Eagle Harbor Technologies, Inc. Low pressure dielectric barrier discharge plasma thruster
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
US10903047B2 (en) 2018-07-27 2021-01-26 Eagle Harbor Technologies, Inc. Precise plasma control system
US11430635B2 (en) 2018-07-27 2022-08-30 Eagle Harbor Technologies, Inc. Precise plasma control system
JP6961944B2 (ja) * 2017-01-18 2021-11-05 富士電機株式会社 パワー半導体モジュール
EP4266579A3 (de) 2017-02-07 2023-12-27 Eagle Harbor Technologies, Inc. Transformator-resonanzwandler
CN106991221B (zh) * 2017-03-24 2020-04-24 清华大学 一种基于igbt器件瞬态物理过程的分段折线建模方法
JP6902167B2 (ja) 2017-08-25 2021-07-14 イーグル ハーバー テクノロジーズ, インク.Eagle Harbor Technologies, Inc. ナノ秒パルスを使用する任意波形の発生
CN107835002B (zh) * 2017-09-20 2024-03-12 同方威视技术股份有限公司 固态脉冲调制器中的保护电路、振荡补偿电路和供电电路
JP6919592B2 (ja) * 2018-02-09 2021-08-18 トヨタ自動車株式会社 スイッチング回路
US11222767B2 (en) 2018-07-27 2022-01-11 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US10607814B2 (en) 2018-08-10 2020-03-31 Eagle Harbor Technologies, Inc. High voltage switch with isolated power
US11302518B2 (en) 2018-07-27 2022-04-12 Eagle Harbor Technologies, Inc. Efficient energy recovery in a nanosecond pulser circuit
US11532457B2 (en) 2018-07-27 2022-12-20 Eagle Harbor Technologies, Inc. Precise plasma control system
CN112805920A (zh) 2018-08-10 2021-05-14 鹰港科技有限公司 用于rf等离子体反应器的等离子体鞘控制
TW202308306A (zh) 2019-01-08 2023-02-16 美商鷹港科技股份有限公司 產生高壓脈波之方法
CN112640277A (zh) * 2019-01-10 2021-04-09 富士电机株式会社 栅极驱动装置、开关装置
TWI778449B (zh) 2019-11-15 2022-09-21 美商鷹港科技股份有限公司 高電壓脈衝電路
US11527383B2 (en) 2019-12-24 2022-12-13 Eagle Harbor Technologies, Inc. Nanosecond pulser RF isolation for plasma systems
CN117356021A (zh) * 2021-06-01 2024-01-05 三菱电机株式会社 电力用半导体元件的驱动调整电路、功率模块以及电力变换装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58164323A (ja) * 1982-03-25 1983-09-29 Nissan Motor Co Ltd 半導体スイツチ回路
JPS58178632A (ja) * 1982-04-13 1983-10-19 Nissan Motor Co Ltd スイツチ回路
CN1004184B (zh) * 1985-05-15 1989-05-10 东芝株式会社 导电率调制型mos场效应管的过电流保护电路
JPS6395728A (ja) * 1986-10-13 1988-04-26 Fuji Electric Co Ltd Igbtの過電流保護回路
FR2630276B1 (fr) * 1988-04-14 1992-07-03 Bendix Electronics Sa Circuit de commande d'une charge inductive
US5055721A (en) * 1989-04-13 1991-10-08 Mitsubishi Denki Kabushiki Kaisha Drive circuit for igbt device
US5061863A (en) * 1989-05-16 1991-10-29 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Transistor provided with a current detecting function
JPH04167813A (ja) * 1990-10-31 1992-06-15 Fujitsu Ltd 半導体集積回路装置
US5173848A (en) * 1991-09-06 1992-12-22 Roof Richard W Motor controller with bi-modal turnoff circuits
JP2956319B2 (ja) * 1991-11-07 1999-10-04 富士電機株式会社 電圧駆動形スイッチング素子の逆バイアス制御回路
US5500619A (en) * 1992-03-18 1996-03-19 Fuji Electric Co., Ltd. Semiconductor device
FR2693853B1 (fr) * 1992-07-16 1994-10-21 Sgs Thomson Microelectronics Circuit de protection d'un composant de puissance contre des surtensions directes.
JPH0624393U (ja) * 1992-08-28 1994-03-29 東洋電機製造株式会社 Igbtインバータ回路
JP2837054B2 (ja) * 1992-09-04 1998-12-14 三菱電機株式会社 絶縁ゲート型半導体装置
JP3084982B2 (ja) * 1992-11-25 2000-09-04 富士電機株式会社 半導体装置
EP0631390B1 (de) * 1993-06-22 1999-09-01 Philips Electronics Uk Limited Halbleiter-Leistungsschaltung
GB2279524A (en) * 1993-06-22 1995-01-04 Philips Electronics Uk Ltd Gate control circuit for power MOSFET
JPH07147726A (ja) * 1993-11-26 1995-06-06 Fuji Electric Co Ltd 半導体装置の過電圧制限回路
JP3193827B2 (ja) * 1994-04-28 2001-07-30 三菱電機株式会社 半導体パワーモジュールおよび電力変換装置

Also Published As

Publication number Publication date
JP3373704B2 (ja) 2003-02-04
DE69600911D1 (de) 1998-12-10
US5808504A (en) 1998-09-15
KR970013607A (ko) 1997-03-29
EP0762652A1 (de) 1997-03-12
EP0762652B1 (de) 1998-11-04
KR100218220B1 (ko) 1999-09-01
JPH0965644A (ja) 1997-03-07

Similar Documents

Publication Publication Date Title
DE69600911D1 (de) Isolierte Gate-Transistor-Ansteuerschaltung
DE69637366D1 (de) Halbleiteranordnung mit isoliertem Gate
DE69408605T2 (de) SOI-Transistor
DE69213702D1 (de) Feldeffekttransistor
DE19983773T1 (de) Transistor mit eingekerbtem Gate
DE69410067T2 (de) Transistorschaltung
DE69528203D1 (de) Transistor
DE69428649D1 (de) LSI-Toranordnung
DE9405483U1 (de) Sektionaltor
NO976070L (no) Felteffekttransistor
DE59500137D1 (de) Sektionaltor
DE29604095U1 (de) Sektionaltor
DE69429970T2 (de) Transistorschaltung
DE69517662D1 (de) Feldeffekt-Transistor
DE69615536T2 (de) Mos transistor
DE69318686D1 (de) Komplementärer Feldeffekt-Transistor
DE29515496U1 (de) Drehflügeltor
DE29519459U1 (de) Flachschieberorgan
ATA101396A (de) Tor
DE9421755U1 (de) Selektionaltor
DE69311093D1 (de) Feldeffekttransistor
DE29503474U1 (de) Sektionaltor
DE29506412U1 (de) Sektionaltor
DE9314651U1 (de) Sectionaltor
DE29515497U1 (de) Tor

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee