DE69528967D1 - Transistorstromgeneratorstufe für integrierte Analogschaltungen - Google Patents

Transistorstromgeneratorstufe für integrierte Analogschaltungen

Info

Publication number
DE69528967D1
DE69528967D1 DE69528967T DE69528967T DE69528967D1 DE 69528967 D1 DE69528967 D1 DE 69528967D1 DE 69528967 T DE69528967 T DE 69528967T DE 69528967 T DE69528967 T DE 69528967T DE 69528967 D1 DE69528967 D1 DE 69528967D1
Authority
DE
Germany
Prior art keywords
current generator
analog circuits
transistor current
integrated analog
generator stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69528967T
Other languages
English (en)
Inventor
Melchiorre Bruccoltri
Gaetano Cosentino
Marco Demicheli
Giuseppe Patti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
STMicroelectronics SRL
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69528967D1 publication Critical patent/DE69528967D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/265—Current mirrors using bipolar transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)
DE69528967T 1995-05-31 1995-05-31 Transistorstromgeneratorstufe für integrierte Analogschaltungen Expired - Lifetime DE69528967D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP95830226A EP0745921B1 (de) 1995-05-31 1995-05-31 Transistorstromgeneratorstufe für integrierte Analogschaltungen

Publications (1)

Publication Number Publication Date
DE69528967D1 true DE69528967D1 (de) 2003-01-09

Family

ID=8221935

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69528967T Expired - Lifetime DE69528967D1 (de) 1995-05-31 1995-05-31 Transistorstromgeneratorstufe für integrierte Analogschaltungen

Country Status (4)

Country Link
US (1) US5805015A (de)
EP (1) EP0745921B1 (de)
JP (1) JPH09284063A (de)
DE (1) DE69528967D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10011670A1 (de) * 2000-03-10 2001-09-20 Infineon Technologies Ag Schaltungsanordnung, insbesondere Bias-Schaltung
US6753734B2 (en) 2001-06-06 2004-06-22 Anadigics, Inc. Multi-mode amplifier bias circuit
US6842075B2 (en) * 2001-06-06 2005-01-11 Anadigics, Inc. Gain block with stable internal bias from low-voltage power supply
US6794928B2 (en) * 2002-12-27 2004-09-21 Samhop Microelectronics Corp. Low voltage constant current source
US6956428B1 (en) * 2004-03-02 2005-10-18 Marvell International Ltd. Base current compensation for a bipolar transistor current mirror circuit
US7746590B2 (en) * 2004-10-06 2010-06-29 Agere Systems Inc. Current mirrors having fast turn-on time
CN102435799B (zh) * 2011-04-15 2014-01-22 北京博电新力电气股份有限公司 一种精密大电流的发生装置
CN104748864B (zh) * 2015-03-31 2017-10-13 中国科学院上海技术物理研究所 一种逐元暗电流抑制的cmos红外探测器读出电路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4525682A (en) * 1984-02-07 1985-06-25 Zenith Electronics Corporation Biased current mirror having minimum switching delay
JPH06100938B2 (ja) * 1984-02-08 1994-12-12 ローム株式会社 充放電クランプ回路
US5134320A (en) * 1991-03-07 1992-07-28 Hughes Aircraft Company High efficiency FET driver with energy recovery
US5227714A (en) * 1991-10-07 1993-07-13 Brooktree Corporation Voltage regulator
JPH077404A (ja) * 1992-11-03 1995-01-10 Texas Instr Deutschland Gmbh トランジスタ駆動回路配置
US5408174A (en) * 1993-06-25 1995-04-18 At&T Corp. Switched capacitor current reference
JPH07191769A (ja) * 1993-12-27 1995-07-28 Toshiba Corp 基準電流発生回路

Also Published As

Publication number Publication date
JPH09284063A (ja) 1997-10-31
EP0745921B1 (de) 2002-11-27
US5805015A (en) 1998-09-08
EP0745921A1 (de) 1996-12-04

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Legal Events

Date Code Title Description
8332 No legal effect for de