DE69942293D1 - Schaltkreis für Referenz-Spannungsversorgung - Google Patents
Schaltkreis für Referenz-SpannungsversorgungInfo
- Publication number
- DE69942293D1 DE69942293D1 DE69942293T DE69942293T DE69942293D1 DE 69942293 D1 DE69942293 D1 DE 69942293D1 DE 69942293 T DE69942293 T DE 69942293T DE 69942293 T DE69942293 T DE 69942293T DE 69942293 D1 DE69942293 D1 DE 69942293D1
- Authority
- DE
- Germany
- Prior art keywords
- circuit
- reference voltage
- voltage supply
- supply
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Control Of Voltage And Current In General (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20184198A JP3244057B2 (ja) | 1998-07-16 | 1998-07-16 | 基準電圧源回路 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69942293D1 true DE69942293D1 (de) | 2010-06-10 |
Family
ID=16447790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69942293T Expired - Lifetime DE69942293D1 (de) | 1998-07-16 | 1999-07-14 | Schaltkreis für Referenz-Spannungsversorgung |
Country Status (4)
Country | Link |
---|---|
US (2) | US6313515B1 (de) |
EP (1) | EP0973200B1 (de) |
JP (1) | JP3244057B2 (de) |
DE (1) | DE69942293D1 (de) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19964214C2 (de) * | 1999-09-07 | 2002-01-17 | Infineon Technologies Ag | Verfahren zur Herstellung einer Driftzone eines Kompensationsbauelements |
US6784029B1 (en) * | 2002-04-12 | 2004-08-31 | National Semiconductor Corporation | Bi-directional ESD protection structure for BiCMOS technology |
JP4732726B2 (ja) * | 2003-09-09 | 2011-07-27 | セイコーインスツル株式会社 | 半導体装置の製造方法 |
US7494313B2 (en) * | 2003-11-21 | 2009-02-24 | Miller Industries Towing Equipment Inc. | Wheel lift that may be rapidly disassembled and converted |
KR100939291B1 (ko) | 2005-02-24 | 2010-01-28 | 후지쯔 가부시끼가이샤 | 기준 전압 발생 회로 |
KR100756317B1 (ko) * | 2006-02-06 | 2007-09-06 | 삼성전자주식회사 | 딥 엔웰 씨모스 공정으로 구현한 수직형 바이폴라 정션트랜지스터를 이용한 전압 기준 회로 및 전류 기준 회로 |
FR2918504B1 (fr) * | 2007-07-06 | 2009-11-27 | St Microelectronics Sa | Resistance integree diffusee |
JP5330899B2 (ja) * | 2009-05-25 | 2013-10-30 | 株式会社東芝 | 半導体装置及びその製造方法 |
CN101635298B (zh) * | 2009-06-10 | 2014-12-31 | 北京中星微电子有限公司 | 平面工艺的三维集成电路 |
US9520486B2 (en) | 2009-11-04 | 2016-12-13 | Analog Devices, Inc. | Electrostatic protection device |
DE102010007771B4 (de) * | 2010-02-12 | 2011-09-22 | Texas Instruments Deutschland Gmbh | Elektronische Vorrichtung und Verfahren zum Erzeugen einer krümmungskompensierten Bandabstandsreferenzspannung |
US8368116B2 (en) * | 2010-06-09 | 2013-02-05 | Analog Devices, Inc. | Apparatus and method for protecting electronic circuits |
US8432651B2 (en) | 2010-06-09 | 2013-04-30 | Analog Devices, Inc. | Apparatus and method for electronic systems reliability |
US8665571B2 (en) | 2011-05-18 | 2014-03-04 | Analog Devices, Inc. | Apparatus and method for integrated circuit protection |
US10199482B2 (en) | 2010-11-29 | 2019-02-05 | Analog Devices, Inc. | Apparatus for electrostatic discharge protection |
US8466489B2 (en) | 2011-02-04 | 2013-06-18 | Analog Devices, Inc. | Apparatus and method for transient electrical overstress protection |
US8592860B2 (en) | 2011-02-11 | 2013-11-26 | Analog Devices, Inc. | Apparatus and method for protection of electronic circuits operating under high stress conditions |
US8680620B2 (en) | 2011-08-04 | 2014-03-25 | Analog Devices, Inc. | Bi-directional blocking voltage protection devices and methods of forming the same |
US8947841B2 (en) | 2012-02-13 | 2015-02-03 | Analog Devices, Inc. | Protection systems for integrated circuits and methods of forming the same |
US8829570B2 (en) | 2012-03-09 | 2014-09-09 | Analog Devices, Inc. | Switching device for heterojunction integrated circuits and methods of forming the same |
US8946822B2 (en) | 2012-03-19 | 2015-02-03 | Analog Devices, Inc. | Apparatus and method for protection of precision mixed-signal electronic circuits |
US8610251B1 (en) | 2012-06-01 | 2013-12-17 | Analog Devices, Inc. | Low voltage protection devices for precision transceivers and methods of forming the same |
US8637899B2 (en) | 2012-06-08 | 2014-01-28 | Analog Devices, Inc. | Method and apparatus for protection and high voltage isolation of low voltage communication interface terminals |
US8796729B2 (en) | 2012-11-20 | 2014-08-05 | Analog Devices, Inc. | Junction-isolated blocking voltage devices with integrated protection structures and methods of forming the same |
US9123540B2 (en) | 2013-01-30 | 2015-09-01 | Analog Devices, Inc. | Apparatus for high speed signal processing interface |
US9006781B2 (en) | 2012-12-19 | 2015-04-14 | Analog Devices, Inc. | Devices for monolithic data conversion interface protection and methods of forming the same |
US8860080B2 (en) | 2012-12-19 | 2014-10-14 | Analog Devices, Inc. | Interface protection device with integrated supply clamp and method of forming the same |
US9275991B2 (en) | 2013-02-13 | 2016-03-01 | Analog Devices, Inc. | Apparatus for transceiver signal isolation and voltage clamp |
US9147677B2 (en) | 2013-05-16 | 2015-09-29 | Analog Devices Global | Dual-tub junction-isolated voltage clamp devices for protecting low voltage circuitry connected between high voltage interface pins and methods of forming the same |
US9171832B2 (en) | 2013-05-24 | 2015-10-27 | Analog Devices, Inc. | Analog switch with high bipolar blocking voltage in low voltage CMOS process |
JP6083421B2 (ja) * | 2014-08-28 | 2017-02-22 | 株式会社村田製作所 | バンドギャップ基準電圧回路 |
US9484739B2 (en) | 2014-09-25 | 2016-11-01 | Analog Devices Global | Overvoltage protection device and method |
US9478608B2 (en) | 2014-11-18 | 2016-10-25 | Analog Devices, Inc. | Apparatus and methods for transceiver interface overvoltage clamping |
US10068894B2 (en) | 2015-01-12 | 2018-09-04 | Analog Devices, Inc. | Low leakage bidirectional clamps and methods of forming the same |
US10181719B2 (en) | 2015-03-16 | 2019-01-15 | Analog Devices Global | Overvoltage blocking protection device |
US9673187B2 (en) | 2015-04-07 | 2017-06-06 | Analog Devices, Inc. | High speed interface protection apparatus |
EP3091418B1 (de) | 2015-05-08 | 2023-04-19 | STMicroelectronics S.r.l. | Schaltungsanordnung zur erzeugung eines referenzspannungsbandabstands |
US9831233B2 (en) | 2016-04-29 | 2017-11-28 | Analog Devices Global | Apparatuses for communication systems transceiver interfaces |
US10734806B2 (en) | 2016-07-21 | 2020-08-04 | Analog Devices, Inc. | High voltage clamps with transient activation and activation release control |
US10249609B2 (en) | 2017-08-10 | 2019-04-02 | Analog Devices, Inc. | Apparatuses for communication systems transceiver interfaces |
US10700056B2 (en) | 2018-09-07 | 2020-06-30 | Analog Devices, Inc. | Apparatus for automotive and communication systems transceiver interfaces |
US11387648B2 (en) | 2019-01-10 | 2022-07-12 | Analog Devices International Unlimited Company | Electrical overstress protection with low leakage current for high voltage tolerant high speed interfaces |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA997481A (en) * | 1972-12-29 | 1976-09-21 | International Business Machines Corporation | Dc testing of integrated circuits and a novel integrated circuit structure to facilitate such testing |
US3816762A (en) * | 1973-01-02 | 1974-06-11 | Fairchild Camera Instr Co | Noise suppression circuit |
US3829709A (en) * | 1973-08-31 | 1974-08-13 | Micro Components Corp | Supply reversal protecton circuit |
JPS6048765B2 (ja) * | 1977-12-19 | 1985-10-29 | 日本電気株式会社 | 定電圧半導体集積回路 |
US4295088A (en) * | 1978-12-11 | 1981-10-13 | Rca Corporation | Temperature-sensitive voltage divider |
DE3273527D1 (en) * | 1981-05-27 | 1986-11-06 | Nec Corp | Semiconductor device having two resistors |
US4898837A (en) * | 1987-11-19 | 1990-02-06 | Sanyo Electric Co., Ltd. | Method of fabricating a semiconductor integrated circuit |
US4943945A (en) | 1989-06-13 | 1990-07-24 | International Business Machines Corporation | Reference voltage generator for precharging bit lines of a transistor memory |
JPH0475371A (ja) * | 1990-07-18 | 1992-03-10 | Matsushita Electric Ind Co Ltd | 半導体集積回路 |
DE69029271T2 (de) * | 1990-12-21 | 1997-04-17 | Sgs Thomson Microelectronics | Schutzvorrichtung gegen elektrostatische Entladung für einen IC-Anschluss und deren integrierte Struktur |
KR0175319B1 (ko) | 1991-03-27 | 1999-04-01 | 김광호 | 정전압 회로 |
DE4111103A1 (de) * | 1991-04-05 | 1992-10-08 | Siemens Ag | Cmos-bandabstands-referenzschaltung |
JPH0659751A (ja) | 1992-08-13 | 1994-03-04 | Matsushita Electric Works Ltd | バンドギャップ基準電圧調整回路 |
US5315230A (en) | 1992-09-03 | 1994-05-24 | United Memories, Inc. | Temperature compensated voltage reference for low and wide voltage ranges |
JP3104587B2 (ja) * | 1995-10-05 | 2000-10-30 | 日本電気株式会社 | 半導体装置の製造方法 |
US5679593A (en) * | 1996-02-01 | 1997-10-21 | Micron Technology, Inc. | Method of fabricating a high resistance integrated circuit resistor |
-
1998
- 1998-07-16 JP JP20184198A patent/JP3244057B2/ja not_active Expired - Fee Related
-
1999
- 1999-07-14 US US09/352,593 patent/US6313515B1/en not_active Expired - Lifetime
- 1999-07-14 DE DE69942293T patent/DE69942293D1/de not_active Expired - Lifetime
- 1999-07-14 EP EP99113804A patent/EP0973200B1/de not_active Expired - Lifetime
-
2001
- 2001-06-13 US US09/878,972 patent/US6511889B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0973200A1 (de) | 2000-01-19 |
US20010040254A1 (en) | 2001-11-15 |
EP0973200B1 (de) | 2010-04-28 |
US6313515B1 (en) | 2001-11-06 |
JP3244057B2 (ja) | 2002-01-07 |
JP2000035827A (ja) | 2000-02-02 |
US6511889B2 (en) | 2003-01-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69942293D1 (de) | Schaltkreis für Referenz-Spannungsversorgung | |
DE69801980T2 (de) | Abtast- und halteschaltung für schaltnetzteil | |
DE69736529D1 (de) | Halbleiteranordnung für hochspannung | |
DE69912328D1 (de) | Fassung für integrierte Schaltkreise | |
DE69919045D1 (de) | Spannungserhöhungsschaltung für Speicheranordnung | |
FR2774529B1 (fr) | Circuit de generation de tension | |
DE69822930D1 (de) | Versorgungsschaltung für einen Elektizitätszähler | |
DE59900215D1 (de) | Referenzspannung-Erzeugungsschaltung | |
DE10085350T1 (de) | Bezugsspannungsverteilung für Multilast-I/O-Systeme | |
DE69929497D1 (de) | Spannungsversorgungsschaltung | |
DE59813694D1 (de) | Spannungsregelschaltung | |
DE69900882D1 (de) | Konstantstromversorgungsschaltung für verbindbare Modulelemente | |
DE60012868D1 (de) | Schaltungsplatte für Hochspannungseinsatz | |
DE69822118D1 (de) | Offset-korrekturschaltung für kodiervorrichtung | |
DE69800343D1 (de) | Beglaubigungsverfahren für integrierte Schaltung | |
DE69738616D1 (de) | Schaltanordnung für hochspannungsfreileitungen | |
DE69521593D1 (de) | Speisespannung-Auswahlschaltung für Spannungsregler | |
DE69739864D1 (de) | Verbesserte Spannungserhöhungsschaltung für Speicheranordnungen | |
DE59914352D1 (de) | Referenzspannungsschaltung | |
DE69427025D1 (de) | Doppelquellenspannungsversorgungsschaltung | |
DE69802654T2 (de) | Vorspannungsschaltung für Spannungsreferenzschaltung | |
DE29822508U1 (de) | Prüfgerät für Spannungsversorgungsnetze | |
DE29817464U1 (de) | Anschlußset für ein elektrisches Gerät | |
DE60123925D1 (de) | Stromreferenzschaltung für niedrige Versorgungsspannungen | |
DE69612878T2 (de) | Stromversorgungsschaltung für mikrofon |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
R082 | Change of representative |
Ref document number: 973200 Country of ref document: EP Representative=s name: SPLANEMANN PATENT- UND RECHTSANWAELTE PARTNERS, DE |
|
R081 | Change of applicant/patentee |
Ref document number: 973200 Country of ref document: EP Owner name: RENESAS ELECTRONICS CORPORATION, JP Free format text: FORMER OWNER: NEC ELECTRONICS CORP., KAWASAKI, JP Effective date: 20120828 |
|
R082 | Change of representative |
Ref document number: 973200 Country of ref document: EP Representative=s name: SPLANEMANN PATENT- UND RECHTSANWAELTE PARTNERS, DE Effective date: 20120828 |