DE69029271T2 - Schutzvorrichtung gegen elektrostatische Entladung für einen IC-Anschluss und deren integrierte Struktur - Google Patents
Schutzvorrichtung gegen elektrostatische Entladung für einen IC-Anschluss und deren integrierte StrukturInfo
- Publication number
- DE69029271T2 DE69029271T2 DE69029271T DE69029271T DE69029271T2 DE 69029271 T2 DE69029271 T2 DE 69029271T2 DE 69029271 T DE69029271 T DE 69029271T DE 69029271 T DE69029271 T DE 69029271T DE 69029271 T2 DE69029271 T2 DE 69029271T2
- Authority
- DE
- Germany
- Prior art keywords
- connection
- protective device
- electrostatic discharge
- integrated structure
- device against
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000001681 protective effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP90830611A EP0492032B1 (de) | 1990-12-21 | 1990-12-21 | Schutzvorrichtung gegen elektrostatische Entladung für einen IC-Anschluss und deren integrierte Struktur |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69029271D1 DE69029271D1 (de) | 1997-01-09 |
DE69029271T2 true DE69029271T2 (de) | 1997-04-17 |
Family
ID=8206044
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69029271T Expired - Fee Related DE69029271T2 (de) | 1990-12-21 | 1990-12-21 | Schutzvorrichtung gegen elektrostatische Entladung für einen IC-Anschluss und deren integrierte Struktur |
Country Status (4)
Country | Link |
---|---|
US (1) | US5223737A (de) |
EP (1) | EP0492032B1 (de) |
JP (1) | JPH0548007A (de) |
DE (1) | DE69029271T2 (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5235489A (en) * | 1991-06-28 | 1993-08-10 | Sgs-Thomson Microelectronics, Inc. | Integrated solution to high voltage load dump conditions |
JPH0522099A (ja) * | 1991-07-11 | 1993-01-29 | Nissan Motor Co Ltd | 半導体入力保護回路 |
US5384482A (en) * | 1992-05-18 | 1995-01-24 | Nec Corporation | Semiconductor integrated circuit device having input protective circuit |
US5477414A (en) * | 1993-05-03 | 1995-12-19 | Xilinx, Inc. | ESD protection circuit |
US5538907A (en) * | 1994-05-11 | 1996-07-23 | Lsi Logic Corporation | Method for forming a CMOS integrated circuit with electrostatic discharge protection |
US5493133A (en) * | 1994-06-30 | 1996-02-20 | Texas Instruments Incorporated | PNP punchthrough-assisted protection device for special applications in CMOS technologies |
US5500546A (en) * | 1994-09-16 | 1996-03-19 | Texas Instruments Incorporated | ESD protection circuits using Zener diodes |
EP0785576A3 (de) * | 1995-09-29 | 1998-10-07 | Texas Instruments Incorporated | Schaltung mit einem Schutzmittel |
US5850095A (en) * | 1996-09-24 | 1998-12-15 | Texas Instruments Incorporated | ESD protection circuit using zener diode and interdigitated NPN transistor |
JP3436462B2 (ja) * | 1996-11-01 | 2003-08-11 | 三菱電機株式会社 | 半導体装置 |
US5990520A (en) * | 1997-02-07 | 1999-11-23 | Digital Equipment Corporation | Method for fabricating a high performance vertical bipolar NPN or PNP transistor having low base resistance in a standard CMOS process |
JPH10270640A (ja) * | 1997-03-26 | 1998-10-09 | Mitsubishi Electric Corp | 半導体集積回路装置 |
SE512494C2 (sv) * | 1997-09-02 | 2000-03-27 | Ericsson Telefon Ab L M | Skyddskrets |
DE19743230C1 (de) | 1997-09-30 | 1999-04-15 | Siemens Ag | Integrierte Halbleiterschaltung mit Schutzstruktur zum Schutz vor elektrostatischer Entladung |
KR100374898B1 (ko) * | 1997-09-30 | 2003-03-06 | 인피니언 테크놀로지스 아게 | 정전기 방전에 대비한 보호 구조물을 가지는 반도체 집적회로 |
SE9704149D0 (sv) * | 1997-11-13 | 1997-11-13 | Abb Research Ltd | A semiconductor device of SiC and a transistor of SiC having an insulated gate |
JP3244057B2 (ja) | 1998-07-16 | 2002-01-07 | 日本電気株式会社 | 基準電圧源回路 |
JP3955396B2 (ja) * | 1998-09-17 | 2007-08-08 | 株式会社ルネサステクノロジ | 半導体サージ吸収素子 |
US6274909B1 (en) * | 1999-11-12 | 2001-08-14 | Etron Technology, Inc. | Guard ring structure with deep N well on ESD devices |
DE10028008A1 (de) * | 2000-06-06 | 2001-12-13 | Bosch Gmbh Robert | Schutzvorrichtung gegen elektrostatische Entladungen |
US6455919B1 (en) | 2001-03-19 | 2002-09-24 | International Business Machines Corporation | Internally ballasted silicon germanium transistor |
TW200305272A (en) * | 2002-03-29 | 2003-10-16 | Sanyo Electric Co | Semiconductor integrated circuit device |
US7196889B2 (en) * | 2002-11-15 | 2007-03-27 | Medtronic, Inc. | Zener triggered overvoltage protection device |
JP2004235199A (ja) * | 2003-01-28 | 2004-08-19 | Renesas Technology Corp | 半導体装置 |
JP4223375B2 (ja) * | 2003-11-14 | 2009-02-12 | 三菱電機株式会社 | 半導体装置 |
US7119401B2 (en) * | 2004-01-07 | 2006-10-10 | International Business Machines Corporation | Tunable semiconductor diodes |
JP2006080160A (ja) * | 2004-09-07 | 2006-03-23 | Toshiba Corp | 静電保護回路 |
US7042028B1 (en) * | 2005-03-14 | 2006-05-09 | System General Corp. | Electrostatic discharge device |
US20060250732A1 (en) * | 2005-05-06 | 2006-11-09 | Peachey Nathaniel M | Transient pulse, substrate-triggered biCMOS rail clamp for ESD abatement |
US7564665B2 (en) * | 2007-01-10 | 2009-07-21 | Standard Microsystems Corporation | Pad ESD spreading technique |
JP2013073993A (ja) * | 2011-09-27 | 2013-04-22 | Semiconductor Components Industries Llc | 半導体装置 |
JP2013073992A (ja) * | 2011-09-27 | 2013-04-22 | Semiconductor Components Industries Llc | 半導体装置 |
FR3059165B1 (fr) * | 2016-11-23 | 2019-01-25 | Continental Automotive France | Procede et dispositif de lecture de l'etat de variables de contact d'un vehicule automobile |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57136356A (en) * | 1981-02-17 | 1982-08-23 | Fujitsu Ltd | Semiconductor device |
GB2127214B (en) * | 1982-09-10 | 1986-02-05 | Standard Telephones Cables Ltd | Semiconductor protection device for integrated circuits |
JPS6281048A (ja) * | 1985-10-04 | 1987-04-14 | Toshiba Corp | 入力保護回路 |
GB2185621B (en) * | 1985-10-29 | 1988-12-14 | Plessey Co Plc | Protection structures |
US5077591A (en) * | 1986-09-30 | 1991-12-31 | Texas Instruments Incorporated | Electrostatic discharge protection for semiconductor input devices |
JPS6455017A (en) * | 1987-08-25 | 1989-03-02 | Mitsubishi Electric Corp | Protective circuit device for integrated circuit |
FR2624655B1 (fr) * | 1987-12-14 | 1990-05-11 | Sgs Thomson Microelectronics | Structure de protection d'un acces a un circuit integre |
-
1990
- 1990-12-21 EP EP90830611A patent/EP0492032B1/de not_active Expired - Lifetime
- 1990-12-21 DE DE69029271T patent/DE69029271T2/de not_active Expired - Fee Related
-
1991
- 1991-12-20 US US07/812,190 patent/US5223737A/en not_active Expired - Lifetime
- 1991-12-21 JP JP3355883A patent/JPH0548007A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0492032A1 (de) | 1992-07-01 |
DE69029271D1 (de) | 1997-01-09 |
JPH0548007A (ja) | 1993-02-26 |
US5223737A (en) | 1993-06-29 |
EP0492032B1 (de) | 1996-11-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69029271T2 (de) | Schutzvorrichtung gegen elektrostatische Entladung für einen IC-Anschluss und deren integrierte Struktur | |
DE69220159T2 (de) | Schutzstruktur gegen elektrostatische Entladungen | |
DE69226337D1 (de) | Schutzstruktur gegen elektrostatische Entladungen | |
DE69530222D1 (de) | Embolieelemente und gerät für ihre verabreichung | |
DE69531571D1 (de) | Verbesserungen in Bezug auf Halbleitervorrichtungen | |
DE69421248D1 (de) | Polierteil und Wafer-Poliervorrichtung | |
DE69504451T2 (de) | Schutz gegen elektrostatische Entladungen für integrierte Schaltungen | |
DE69210753T2 (de) | Auswahlvorrichtung für Zellen und dergleichen | |
DE69313718D1 (de) | Elektrostatisches Voltmeter mit integrierten Hochspannungs-Schaltungen | |
DE69622251D1 (de) | Elektrostatische Entladungsstruktur für eine Halbleiteranordnung | |
IT8619449A1 (it) | Struttura integrata di protezione da scariche elettrostatiche e dispositivo a semiconduttore incorporante la stessa | |
DE69214040D1 (de) | Gleichfeld-Gasentladungsanzeigeeinrichtung und diese verwendende Gasentladungsanzeigevorrichtung | |
DE69936677D1 (de) | Schutzstruktur für eine integrierte Schaltungshalbleiteranordnung gegen elektrostatische Entladungen | |
DE69527453D1 (de) | Schutzeinrichtung gegen Überspannungen in integrierten Schaltungen | |
DE69623509D1 (de) | Integriertes Halbleiterbauelement mit Schutzvorrichtung gegen elektrostatische Entladungen | |
ITMI951600A0 (it) | Circuito integrato con un gate di ossido e con un dispositivo di protezione al suo ingresso per la limitazione della tensione d'ingresso in particolare di sovratensioni elettrostatiche | |
DE69311753D1 (de) | Antriebsapparat und damit ausgestatteter XY-Antriebsapparat | |
DE69531121D1 (de) | Integrierte Halbleiteranordnung | |
DE69523964T2 (de) | Anlegevorrichtung für einen externen Harnkatheter und Harnkatheter der eine solche Anlegevorrichtung enthält | |
KR960012414A (ko) | 웨이퍼 검사장치 | |
DE9400927U1 (de) | Fixierset für einen Infusionsadapter sowie Deckpflaster für das Fixierset | |
DE9400903U1 (de) | Spannungsprüfungseinrichtung | |
DE69408552D1 (de) | Elektrostatische Entladungsschutzvorrichtung für integrierte MOS-Schaltungen | |
DE9408944U1 (de) | Sandaufwirbelungsvorrichtung für Sandstrahlgeräte | |
DE69425791D1 (de) | Fixiervorrichtung und damit versehenes Bilderzeugungsgerät |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |