IT1251011B - Dispositivo di controllo di corrente particolarmente per circuiti di potenza in tecnologia mos - Google Patents
Dispositivo di controllo di corrente particolarmente per circuiti di potenza in tecnologia mosInfo
- Publication number
- IT1251011B IT1251011B ITMI910408A ITMI910408A IT1251011B IT 1251011 B IT1251011 B IT 1251011B IT MI910408 A ITMI910408 A IT MI910408A IT MI910408 A ITMI910408 A IT MI910408A IT 1251011 B IT1251011 B IT 1251011B
- Authority
- IT
- Italy
- Prior art keywords
- voltage
- control device
- power circuits
- current control
- terminal connected
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Dc-Dc Converters (AREA)
- Electronic Switches (AREA)
- Control Of Electrical Variables (AREA)
Abstract
Dispositivo di controllo di corrente particolarmente per circuiti di potenza in tecnologia MOS, il quale comprende un transistore MOS che presenta il morsetto di source collegato ad un morsetto di un carico dissipativo, il morsetto di gate collegato ad un circuito pompa, che riceve in ingresso una tensione di alimentazione ed una tensione oscillante ad onda quadra, ed il morsetto di drain collegato ad un'alimentazione. Il dispositivo comprende inoltre un amplificatore differenziale, che ha come ingressi una tensione ed una tensione di riferimento generata da un generatore di tensione di riferimento. Il dispositivo comprende un circuito di controllo, che ha come ingressi una tensione di errore generata dall'amplificatore differenziale ed una corrente di regolazione proveniente, mediante un collegamento elettrico, dal morsetto di gate del transistore MOS. Il circuito di controllo emette segnali di controllo per la regolazione della tensione di alimentazione e della tensione oscillante ad onda quadra del circuito pompa.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI910408A IT1251011B (it) | 1991-02-18 | 1991-02-18 | Dispositivo di controllo di corrente particolarmente per circuiti di potenza in tecnologia mos |
DE69220690T DE69220690T2 (de) | 1991-02-18 | 1992-02-10 | Stromregelungseinrichtung, insbesondere für Leistungsschaltungen in MOS-Technologie |
EP92102150A EP0499921B1 (en) | 1991-02-18 | 1992-02-10 | Current control device, particularly for power circuits in MOS technology |
US07/835,654 US5172018A (en) | 1991-02-18 | 1992-02-13 | Current control device particularly for power circuits in mos technology |
JP4030770A JPH04337813A (ja) | 1991-02-18 | 1992-02-18 | Mos技術における電源回路に特定的な電流制御装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI910408A IT1251011B (it) | 1991-02-18 | 1991-02-18 | Dispositivo di controllo di corrente particolarmente per circuiti di potenza in tecnologia mos |
Publications (3)
Publication Number | Publication Date |
---|---|
ITMI910408A0 ITMI910408A0 (it) | 1991-02-18 |
ITMI910408A1 ITMI910408A1 (it) | 1992-08-18 |
IT1251011B true IT1251011B (it) | 1995-04-28 |
Family
ID=11358616
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI910408A IT1251011B (it) | 1991-02-18 | 1991-02-18 | Dispositivo di controllo di corrente particolarmente per circuiti di potenza in tecnologia mos |
Country Status (5)
Country | Link |
---|---|
US (1) | US5172018A (it) |
EP (1) | EP0499921B1 (it) |
JP (1) | JPH04337813A (it) |
DE (1) | DE69220690T2 (it) |
IT (1) | IT1251011B (it) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1248607B (it) * | 1991-05-21 | 1995-01-19 | Cons Ric Microelettronica | Circuito di pilotaggio di un transistore di potenza con una corrente di base funzione predeterminata di quella di collettore |
JPH05215791A (ja) * | 1992-02-06 | 1993-08-24 | Rohm Co Ltd | 電圧低下検出回路 |
JPH07505014A (ja) * | 1992-03-10 | 1995-06-01 | アナログ・ディバイセス・インコーポレーテッド | トランジスタの飽和を制御する回路構造 |
US5500619A (en) * | 1992-03-18 | 1996-03-19 | Fuji Electric Co., Ltd. | Semiconductor device |
JP3111424B2 (ja) * | 1992-09-01 | 2000-11-20 | 株式会社鷹山 | 信号統合処理回路 |
DE59307905D1 (de) * | 1993-03-24 | 1998-02-05 | Siemens Ag | Schaltungsanordnung zum Schutz eines ein- und auschaltbaren Leistungshalbleiterschalters vor Überspannungen |
US6288602B1 (en) * | 1993-06-25 | 2001-09-11 | International Business Machines Corporation | CMOS on-chip precision voltage reference scheme |
US6476667B1 (en) * | 1993-10-29 | 2002-11-05 | Texas Instruments Incorporated | Adjustable current limiting/sensing circuitry and method |
DE69428884T2 (de) * | 1994-03-22 | 2002-06-20 | Stmicroelectronics S.R.L., Agrate Brianza | Überlastschutzschaltkreis für MOS-Leistungstreiber |
KR0145758B1 (ko) * | 1994-08-24 | 1998-08-01 | 김주용 | 반도체 소자의 전압 조정 회로 |
EP0782235B1 (en) * | 1995-12-29 | 2001-11-14 | STMicroelectronics S.r.l. | Protection method for power transistors, and corresponding circuit |
JPH1014099A (ja) * | 1996-06-21 | 1998-01-16 | Nec Corp | 過電流検出回路 |
US5815028A (en) * | 1996-09-16 | 1998-09-29 | Analog Devices, Inc. | Method and apparatus for frequency controlled bias current |
ES2194091T3 (es) * | 1996-12-05 | 2003-11-16 | St Microelectronics Srl | Circuito de control de un transistor de potencia para un regulador de voltaje. |
US5973547A (en) * | 1997-06-27 | 1999-10-26 | Sun Microsystems, Inc | Self-biasing, offset-nulling power supply monitor circuit |
DE19830356C1 (de) * | 1998-07-07 | 1999-11-11 | Siemens Ag | Verfahren zum Abgleichen eines Widerstands in einer integrierten Schaltung und Vorrichtung zur Durchführung dieses Verfahrens |
AU2001236572A1 (en) | 2000-01-27 | 2001-08-07 | Primarion, Inc. | Microelectronic current regulator |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4527074A (en) * | 1982-10-07 | 1985-07-02 | Ncr Corporation | High voltage pass circuit |
EP0201878A3 (de) * | 1985-05-10 | 1987-04-15 | Siemens Aktiengesellschaft | Schaltungsanordnung mit einem p-schaltenden n-Kanal MOS-Transistor |
US4736121A (en) * | 1985-09-10 | 1988-04-05 | Sos Microelettronica S.p.A. | Charge pump circuit for driving N-channel MOS transistors |
US4785207A (en) * | 1987-01-21 | 1988-11-15 | Hughes Aircraft Company | Leakage regulator circuit for a field effect transistor |
GB2207315B (en) * | 1987-06-08 | 1991-08-07 | Philips Electronic Associated | High voltage semiconductor with integrated low voltage circuitry |
US4808839A (en) * | 1988-04-04 | 1989-02-28 | Motorola, Inc. | Power field effect transistor driver circuit for protection from overvoltages |
FR2642240B1 (fr) * | 1989-01-23 | 1994-07-29 | Sgs Thomson Microelectronics | Circuit a transistor mos de puissance commande par un dispositif a deux pompes de charge symetriques |
-
1991
- 1991-02-18 IT ITMI910408A patent/IT1251011B/it active IP Right Grant
-
1992
- 1992-02-10 DE DE69220690T patent/DE69220690T2/de not_active Expired - Fee Related
- 1992-02-10 EP EP92102150A patent/EP0499921B1/en not_active Expired - Lifetime
- 1992-02-13 US US07/835,654 patent/US5172018A/en not_active Expired - Lifetime
- 1992-02-18 JP JP4030770A patent/JPH04337813A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US5172018A (en) | 1992-12-15 |
EP0499921A3 (it) | 1994-03-30 |
DE69220690D1 (de) | 1997-08-14 |
ITMI910408A0 (it) | 1991-02-18 |
ITMI910408A1 (it) | 1992-08-18 |
DE69220690T2 (de) | 1998-01-02 |
EP0499921B1 (en) | 1997-07-09 |
JPH04337813A (ja) | 1992-11-25 |
EP0499921A2 (en) | 1992-08-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970227 |