ES2194091T3 - Circuito de control de un transistor de potencia para un regulador de voltaje. - Google Patents

Circuito de control de un transistor de potencia para un regulador de voltaje.

Info

Publication number
ES2194091T3
ES2194091T3 ES96830610T ES96830610T ES2194091T3 ES 2194091 T3 ES2194091 T3 ES 2194091T3 ES 96830610 T ES96830610 T ES 96830610T ES 96830610 T ES96830610 T ES 96830610T ES 2194091 T3 ES2194091 T3 ES 2194091T3
Authority
ES
Spain
Prior art keywords
power transistor
control circuit
voltage regulator
low
feedback
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES96830610T
Other languages
English (en)
Inventor
Andrea Milanesi
Vanni Poletto
Alberto Poma
Marco Morelli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Marelli Europe SpA
Original Assignee
STMicroelectronics SRL
Magneti Marelli Powertrain SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, Magneti Marelli Powertrain SpA filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of ES2194091T3 publication Critical patent/ES2194091T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Amplifiers (AREA)

Abstract

LA PRESENTE INVENCION SE REFIERE A UN CIRCUITO REGULADOR DE TENSION QUE TIENE UNA BAJA CAIDA DE TENSION Y UTILIZA UN TRANSISTOR DE POTENCIA DMOS (PT) CONTROLADO POR UNA BOMBA DE CARGA (CP). COMPRENDE DOS CICLOS DE REALIMENTACION: UN PRIMER CICLO DE REALIMENTACION DE ALTA GANANCIA Y PRECISION PERO BAJA VELOCIDAD DE RESPUESTA, Y UN SEGUNDO BUCLE QUE TIENE UNA BANDA DE PASO ANCHA Y UNA RAPIDA VELOCIDAD DE RESPUESTA, PERO BAJA GANANCIA.
ES96830610T 1996-12-05 1996-12-05 Circuito de control de un transistor de potencia para un regulador de voltaje. Expired - Lifetime ES2194091T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP96830610A EP0846996B1 (en) 1996-12-05 1996-12-05 Power transistor control circuit for a voltage regulator

Publications (1)

Publication Number Publication Date
ES2194091T3 true ES2194091T3 (es) 2003-11-16

Family

ID=8226070

Family Applications (1)

Application Number Title Priority Date Filing Date
ES96830610T Expired - Lifetime ES2194091T3 (es) 1996-12-05 1996-12-05 Circuito de control de un transistor de potencia para un regulador de voltaje.

Country Status (4)

Country Link
US (1) US6040736A (es)
EP (1) EP0846996B1 (es)
DE (1) DE69626991T2 (es)
ES (1) ES2194091T3 (es)

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JP3712083B2 (ja) * 1995-11-28 2005-11-02 株式会社ルネサステクノロジ 内部電源電位供給回路及び半導体装置
DE19832309C1 (de) * 1998-07-17 1999-10-14 Siemens Ag Integrierte Schaltung mit einem Spannungsregler
EP1061428B1 (en) * 1999-06-16 2005-08-31 STMicroelectronics S.r.l. BiCMOS/CMOS low drop voltage regulator
US6169444B1 (en) * 1999-07-15 2001-01-02 Maxim Integrated Products, Inc. Pulse frequency operation of regulated charge pumps
US6411069B1 (en) * 1999-08-31 2002-06-25 Advanced Micro Devices, Inc. Continuous capacitor divider sampled regulation scheme
US6300749B1 (en) * 2000-05-02 2001-10-09 Stmicroelectronics S.R.L. Linear voltage regulator with zero mobile compensation
DE10149907A1 (de) * 2001-07-27 2003-03-13 Infineon Technologies Ag Spannungsregler mit Frequenzgangkorrektur
EP1421456B1 (de) 2001-07-27 2012-04-11 Infineon Technologies AG Spannungsregler mit frequenzgangkorrektur
US6806690B2 (en) * 2001-12-18 2004-10-19 Texas Instruments Incorporated Ultra-low quiescent current low dropout (LDO) voltage regulator with dynamic bias and bandwidth
US7119606B2 (en) * 2003-07-10 2006-10-10 Qualcomm, Incorporated Low-power, low-area power headswitch
EP1501001A1 (en) * 2003-07-22 2005-01-26 STMicroelectronics Limited Bias Circuitry
DE10336090A1 (de) * 2003-08-06 2005-03-10 Infineon Technologies Ag Ladungspumpenregelkreis
JP4108695B2 (ja) * 2005-07-15 2008-06-25 三菱電機株式会社 車載電子制御装置
DE102005051084A1 (de) 2005-10-25 2007-04-26 Infineon Technologies Ag Schaltungsanordnung zur Spannungsregelung
US7145318B1 (en) * 2005-11-21 2006-12-05 Atmel Corporation Negative voltage regulator
US20080136384A1 (en) * 2006-12-06 2008-06-12 Texas Instruments, Incorporated Capacitor-free linear voltage regulator for integrated controller area network transceivers
DE102007025323A1 (de) * 2007-05-31 2008-12-11 Infineon Technologies Ag Verfahren zur Regelung einer Ausgangsspannung und Spannungsregler
US8278893B2 (en) 2008-07-16 2012-10-02 Infineon Technologies Ag System including an offset voltage adjusted to compensate for variations in a transistor
US7821328B2 (en) * 2008-12-18 2010-10-26 Texas Instruments Incorporated Dynamic charge pump system for front end protection circuit
US8970190B2 (en) * 2011-03-10 2015-03-03 Microchip Technology Incorporated Using low voltage regulator to supply power to a source-biased power domain
US8901989B2 (en) * 2012-07-26 2014-12-02 Qualcomm Incorporated Adaptive gate drive circuit with temperature compensation
US9312824B2 (en) * 2014-01-14 2016-04-12 Intel Deutschland Gmbh Low noise low-dropout regulator
US9819260B2 (en) * 2015-01-15 2017-11-14 Nxp B.V. Integrated circuit charge pump with failure protection
US9588531B2 (en) * 2015-05-16 2017-03-07 Nxp Usa, Inc. Voltage regulator with extended minimum to maximum load current ratio
US9600007B2 (en) * 2015-07-28 2017-03-21 National Taipei University Of Technology Low dropout regulator with wide input voltage range
US20170033793A1 (en) * 2015-07-31 2017-02-02 Texas Instruments Incorporated Millivolt power harvesting fet controller
US10128833B2 (en) 2015-07-31 2018-11-13 Texas Instruments Incorporated Millivolt power harvesting FET controller
IT201700007428A1 (it) 2017-01-24 2018-07-24 St Microelectronics Srl Circuito a pompa di carica, dispositivo e procedimento corrispondenti
JP7091113B2 (ja) * 2018-03-30 2022-06-27 ラピスセミコンダクタ株式会社 半導体装置、および半導体装置の制御方法
US11394380B2 (en) * 2019-08-09 2022-07-19 Texas Instruments Incorporated Gate drivers and auto-zero comparators
US11489441B2 (en) * 2020-06-02 2022-11-01 Texas Instruments Incorporated Reference voltage generation circuits and related methods

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JPS55135780A (en) * 1979-04-10 1980-10-22 Citizen Watch Co Ltd Electronic watch
US4803612A (en) * 1988-06-08 1989-02-07 National Semiconductor Corporation Clock ripple reduction in a linear low dropout C/DMOS regulator
FR2642240B1 (fr) * 1989-01-23 1994-07-29 Sgs Thomson Microelectronics Circuit a transistor mos de puissance commande par un dispositif a deux pompes de charge symetriques
JP2689708B2 (ja) * 1990-09-18 1997-12-10 日本モトローラ株式会社 バイアス電流制御回路
IT1251011B (it) * 1991-02-18 1995-04-28 Sgs Thomson Microelectronics Dispositivo di controllo di corrente particolarmente per circuiti di potenza in tecnologia mos
US5191278A (en) * 1991-10-23 1993-03-02 International Business Machines Corporation High bandwidth low dropout linear regulator
US5365118A (en) * 1992-06-04 1994-11-15 Linear Technology Corp. Circuit for driving two power mosfets in a half-bridge configuration
EP0574646B1 (en) * 1992-06-16 1997-12-29 STMicroelectronics S.r.l. A circuit for controlling the maximum current in a power-MOS transistor used for driving a load connected to ground
US5412309A (en) * 1993-02-22 1995-05-02 National Semiconductor Corporation Current amplifiers
US5559423A (en) * 1994-03-31 1996-09-24 Norhtern Telecom Limited Voltage regulator including a linear transconductance amplifier
US5552697A (en) * 1995-01-20 1996-09-03 Linfinity Microelectronics Low voltage dropout circuit with compensating capacitance circuitry
US5721485A (en) * 1996-01-04 1998-02-24 Ibm Corporation High performance on-chip voltage regulator designs
JP3709246B2 (ja) * 1996-08-27 2005-10-26 株式会社日立製作所 半導体集積回路

Also Published As

Publication number Publication date
DE69626991T2 (de) 2004-05-19
EP0846996B1 (en) 2003-03-26
EP0846996A1 (en) 1998-06-10
US6040736A (en) 2000-03-21
DE69626991D1 (de) 2003-04-30

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