IT8722290A0 - Dispositivo integrato per schermare l'iniezione di cariche nel substrato. - Google Patents

Dispositivo integrato per schermare l'iniezione di cariche nel substrato.

Info

Publication number
IT8722290A0
IT8722290A0 IT8722290A IT2229087A IT8722290A0 IT 8722290 A0 IT8722290 A0 IT 8722290A0 IT 8722290 A IT8722290 A IT 8722290A IT 2229087 A IT2229087 A IT 2229087A IT 8722290 A0 IT8722290 A0 IT 8722290A0
Authority
IT
Italy
Prior art keywords
charges
shield
injection
substrate
integrated device
Prior art date
Application number
IT8722290A
Other languages
English (en)
Other versions
IT1231894B (it
Inventor
Franco Bertotti
Paolo Ferrari
Maria Teresa Gatti
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT8722290A priority Critical patent/IT1231894B/it
Publication of IT8722290A0 publication Critical patent/IT8722290A0/it
Priority to FR888813123A priority patent/FR2622053B1/fr
Priority to JP63256884A priority patent/JP2681498B2/ja
Priority to US07/256,008 priority patent/US5021860A/en
Priority to DE3834841A priority patent/DE3834841C2/de
Application granted granted Critical
Publication of IT1231894B publication Critical patent/IT1231894B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT8722290A 1987-10-15 1987-10-15 Dispositivo integrato per schermare l'iniezione di cariche nel substrato. IT1231894B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT8722290A IT1231894B (it) 1987-10-15 1987-10-15 Dispositivo integrato per schermare l'iniezione di cariche nel substrato.
FR888813123A FR2622053B1 (fr) 1987-10-15 1988-10-06 Dispositif integre de protection contre l'injection de charges dans le substrat
JP63256884A JP2681498B2 (ja) 1987-10-15 1988-10-11 電荷のサブストレートへの注入を遮へいするための集積装置
US07/256,008 US5021860A (en) 1987-10-15 1988-10-11 Integrated device for shielding the injection of charges into the substrate
DE3834841A DE3834841C2 (de) 1987-10-15 1988-10-13 Integrierte Anordnung in einem Substrat zur Vermeidung parasitärer Substrateffekte

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8722290A IT1231894B (it) 1987-10-15 1987-10-15 Dispositivo integrato per schermare l'iniezione di cariche nel substrato.

Publications (2)

Publication Number Publication Date
IT8722290A0 true IT8722290A0 (it) 1987-10-15
IT1231894B IT1231894B (it) 1992-01-15

Family

ID=11194242

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8722290A IT1231894B (it) 1987-10-15 1987-10-15 Dispositivo integrato per schermare l'iniezione di cariche nel substrato.

Country Status (5)

Country Link
US (1) US5021860A (it)
JP (1) JP2681498B2 (it)
DE (1) DE3834841C2 (it)
FR (1) FR2622053B1 (it)
IT (1) IT1231894B (it)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2655196B1 (fr) * 1989-11-29 1992-04-10 Sgs Thomson Microelectronics Circuit d'isolation dynamique de circuits integres.
JPH05102175A (ja) * 1991-10-07 1993-04-23 Sharp Corp 半導体装置の製造方法
US5408122A (en) * 1993-12-01 1995-04-18 Eastman Kodak Company Vertical structure to minimize settling times for solid state light detectors
US5514901A (en) * 1994-05-17 1996-05-07 Allegro Microsystems, Inc. Epitaxial island with adjacent asymmetrical structure to reduce collection of injected current from the island into other islands
US5545917A (en) * 1994-05-17 1996-08-13 Allegro Microsystems, Inc. Separate protective transistor
US5475340A (en) * 1994-05-23 1995-12-12 Delco Electronics Corporation Active biasing circuit for an epitaxial region in a fault-tolerant, vertical pnp output transistor
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
JP3513610B2 (ja) * 1996-04-19 2004-03-31 株式会社ルネサステクノロジ 半導体装置
JP3513609B2 (ja) * 1996-04-19 2004-03-31 株式会社ルネサステクノロジ 半導体装置
EP0813247B1 (en) * 1996-05-10 2003-08-13 Allegro Microsystems Inc. A separate protective transistor to reduce injected current from one PN-junction-isolated island to another
US5777352A (en) * 1996-09-19 1998-07-07 Eastman Kodak Company Photodetector structure
WO2003005449A1 (en) * 2001-07-03 2003-01-16 Tripath Technology, Inc. Substrate connection in an integrated power circuit
US6787858B2 (en) * 2002-10-16 2004-09-07 Freescale Semiconductor, Inc. Carrier injection protection structure
US6815780B1 (en) * 2003-04-15 2004-11-09 Motorola, Inc. Semiconductor component with substrate injection protection structure
EP1508918A1 (en) * 2003-08-22 2005-02-23 Freescale Semiconductor, Inc. Semiconductor power device
DE10350162B4 (de) * 2003-10-28 2011-07-28 Infineon Technologies AG, 81669 Halbleiterbauteil
FR2884050B1 (fr) * 2005-04-01 2007-07-20 St Microelectronics Sa Circuit integre comprenant un substrat et une resistance
DE102006013203B3 (de) * 2006-03-22 2008-01-10 Infineon Technologies Ag Integrierte Halbleiteranordnung mit Rückstromkomplex zur Verringerung eines Substratstroms und Verfahren zu deren Herstellung
US7898783B2 (en) * 2006-08-10 2011-03-01 Texas Instruments Incorporated Methods and apparatus to reduce substrate voltage bounces and spike voltages in switching amplifiers
US7411271B1 (en) * 2007-01-19 2008-08-12 Episil Technologies Inc. Complementary metal-oxide-semiconductor field effect transistor
US7538396B2 (en) * 2007-01-19 2009-05-26 Episil Technologies Inc. Semiconductor device and complementary metal-oxide-semiconductor field effect transistor
US7514754B2 (en) * 2007-01-19 2009-04-07 Episil Technologies Inc. Complementary metal-oxide-semiconductor transistor for avoiding a latch-up problem
KR101418396B1 (ko) * 2007-11-19 2014-07-10 페어차일드코리아반도체 주식회사 전력 반도체 소자
US9184097B2 (en) * 2009-03-12 2015-11-10 System General Corporation Semiconductor devices and formation methods thereof
WO2013179078A1 (en) 2012-05-30 2013-12-05 Freescale Semiconductor, Inc. A packaged semiconductor device, a semiconductor device and a method of manufacturing a packaged semiconductor device
FR3083919A1 (fr) * 2018-07-13 2020-01-17 Stmicroelectronics (Rousset) Sas Puce electronique protegee

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3890634A (en) * 1970-10-23 1975-06-17 Philips Corp Transistor circuit
US3931634A (en) * 1973-06-14 1976-01-06 Rca Corporation Junction-isolated monolithic integrated circuit device with means for preventing parasitic transistor action
JPS5153483A (it) * 1974-11-06 1976-05-11 Hitachi Ltd
US4233618A (en) * 1978-07-31 1980-11-11 Sprague Electric Company Integrated circuit with power transistor
JPS5599740A (en) * 1979-01-25 1980-07-30 Toko Inc Semiconductor device
FR2492165A1 (fr) * 1980-05-14 1982-04-16 Thomson Csf Dispositif de protection contre les courants de fuite dans des circuits integres
US4496849A (en) * 1982-02-22 1985-01-29 General Motors Corporation Power transistor protection from substrate injection
DE3507181A1 (de) * 1985-03-01 1986-09-04 IC - Haus GmbH, 6501 Bodenheim Schaltungsanordnung zur vermeidung parasitaerer substrat-effekte in integrierten schaltkreisen
IT1197279B (it) * 1986-09-25 1988-11-30 Sgs Microelettronica Spa Dispositivo integrato per schermare l'iniezione di cariche nel substrato, in particolare in circuiti di pilotaggio di carichi induttivi e/o capacitivi

Also Published As

Publication number Publication date
DE3834841A1 (de) 1989-05-24
FR2622053B1 (fr) 1992-02-07
DE3834841C2 (de) 1999-03-18
FR2622053A1 (fr) 1989-04-21
JPH01134960A (ja) 1989-05-26
US5021860A (en) 1991-06-04
JP2681498B2 (ja) 1997-11-26
IT1231894B (it) 1992-01-15

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971030