IT1205094B - Dispositivo a semiconduttore a strato epitassiale sottile comprendente un transistore bipolare planare di tipo pnp verticale con strato sepolto a drogaggio differenziato - Google Patents
Dispositivo a semiconduttore a strato epitassiale sottile comprendente un transistore bipolare planare di tipo pnp verticale con strato sepolto a drogaggio differenziatoInfo
- Publication number
- IT1205094B IT1205094B IT21038/87A IT2103887A IT1205094B IT 1205094 B IT1205094 B IT 1205094B IT 21038/87 A IT21038/87 A IT 21038/87A IT 2103887 A IT2103887 A IT 2103887A IT 1205094 B IT1205094 B IT 1205094B
- Authority
- IT
- Italy
- Prior art keywords
- planar
- drawage
- burded
- differentiated
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT21038/87A IT1205094B (it) | 1987-06-25 | 1987-06-25 | Dispositivo a semiconduttore a strato epitassiale sottile comprendente un transistore bipolare planare di tipo pnp verticale con strato sepolto a drogaggio differenziato |
| EP88305573A EP0296771A3 (en) | 1987-06-25 | 1988-06-17 | Semiconductor device with a buried layer, and method of manufacture |
| JP63156044A JPS6431464A (en) | 1987-06-25 | 1988-06-25 | Semiconductor device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT21038/87A IT1205094B (it) | 1987-06-25 | 1987-06-25 | Dispositivo a semiconduttore a strato epitassiale sottile comprendente un transistore bipolare planare di tipo pnp verticale con strato sepolto a drogaggio differenziato |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8721038A0 IT8721038A0 (it) | 1987-06-25 |
| IT1205094B true IT1205094B (it) | 1989-03-10 |
Family
ID=11175773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT21038/87A IT1205094B (it) | 1987-06-25 | 1987-06-25 | Dispositivo a semiconduttore a strato epitassiale sottile comprendente un transistore bipolare planare di tipo pnp verticale con strato sepolto a drogaggio differenziato |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0296771A3 (it) |
| JP (1) | JPS6431464A (it) |
| IT (1) | IT1205094B (it) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BR0313730A (pt) | 2002-08-13 | 2005-07-12 | Kennametal Widia Gmbh & Co Kg | Ferramenta em forma de disco ou de régua |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1439481A1 (de) * | 1964-12-01 | 1968-11-21 | Siemens Ag | Transistor |
| US4151540A (en) * | 1977-12-08 | 1979-04-24 | Fairchild Camera And Instrument Corporation | High beta, high frequency transistor structure |
| US4337475A (en) * | 1979-06-15 | 1982-06-29 | Gold Star Semiconductor, Ltd. | High power transistor with highly doped buried base layer |
| FR2480503A1 (fr) * | 1980-04-14 | 1981-10-16 | Silicium Semiconducteur Ssc | Transistor de commutation pour forte puissance |
| JPS6272163A (ja) * | 1985-09-26 | 1987-04-02 | Toshiba Corp | 半導体装置 |
-
1987
- 1987-06-25 IT IT21038/87A patent/IT1205094B/it active
-
1988
- 1988-06-17 EP EP88305573A patent/EP0296771A3/en not_active Withdrawn
- 1988-06-25 JP JP63156044A patent/JPS6431464A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6431464A (en) | 1989-02-01 |
| EP0296771A2 (en) | 1988-12-28 |
| EP0296771A3 (en) | 1989-11-08 |
| IT8721038A0 (it) | 1987-06-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3588011D1 (de) | Halbleiteranordnung mit epitaxialem Material. | |
| KR870004526A (ko) | 실리콘 온 인슐레이터 구조를 갖는 반도체 장치 | |
| DE3751972D1 (de) | Bipolarer Transistor | |
| DE3675565D1 (de) | Substratstruktur fuer halbleiteranordnung. | |
| DE3362975D1 (en) | Semiconductor device of the heterojunction transistor type | |
| DE3889610D1 (de) | Halbleiteranordnung mit einem Trench-Bipolartransistor. | |
| DE69319360T2 (de) | Heteroübergang-Bipolartransistor mit Siliziumkarbid | |
| KR890700270A (ko) | 헤테로 접합 바이폴라 트랜지스터 | |
| KR880008455A (ko) | 쌍극성 트랜지스터를 구성하는 반도체장치 | |
| IT8620056A1 (it) | Dispositivo per il trasferimento contemporaneo ribaltamento di articoli | |
| NL193883B (nl) | Geïntegreerde halfgeleiderinrichting. | |
| IT210478Z2 (it) | Dispositivo di distanziamento regolabile per l appoggio di elementi su un substrato | |
| KR880002275A (ko) | 종형 mos 반도체장치 | |
| IT1220185B (it) | Sistema antisaturazione per transistore pnp verticale a collettore isolato e struttura integrata di quest'ultimo | |
| KR880701017A (ko) | 반도체 장치 | |
| IT1205094B (it) | Dispositivo a semiconduttore a strato epitassiale sottile comprendente un transistore bipolare planare di tipo pnp verticale con strato sepolto a drogaggio differenziato | |
| IT1130652B (it) | Procedimento per produrre silicio con proprieta' di semiconduttore | |
| GB8531451D0 (en) | Bipolar semiconductor device | |
| IT1058177B (it) | Circuito semiconduttore integrato comprendente un transistor verticale a base epitassiale | |
| IT1218471B (it) | Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato | |
| FR2582151B1 (fr) | Dispositif a semiconducteur du type transistor bipolaire | |
| DE3855093D1 (de) | Bipolarhalbleiteranordnung | |
| IT8522913A0 (it) | Dispositivo per minimizzare le capacita' parassite di giunzione di un transistor pnp verticale a collettore isolato. | |
| EP0251927A3 (en) | Bipolar transistor with polysilicon stringer base contact | |
| DE3679437D1 (de) | Duennfilm-transistor mit polykristallinem silizium. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970628 |