KR900007103A - 반도체 집적회로와 그 제조방법 - Google Patents

반도체 집적회로와 그 제조방법

Info

Publication number
KR900007103A
KR900007103A KR1019890014558A KR890014558A KR900007103A KR 900007103 A KR900007103 A KR 900007103A KR 1019890014558 A KR1019890014558 A KR 1019890014558A KR 890014558 A KR890014558 A KR 890014558A KR 900007103 A KR900007103 A KR 900007103A
Authority
KR
South Korea
Prior art keywords
manufacturing
integrated circuit
semiconductor integrated
semiconductor
circuit
Prior art date
Application number
KR1019890014558A
Other languages
English (en)
Other versions
KR940002834B1 (ko
Inventor
히로시 모모세
Original Assignee
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바
Publication of KR900007103A publication Critical patent/KR900007103A/ko
Application granted granted Critical
Publication of KR940002834B1 publication Critical patent/KR940002834B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
KR1019890014558A 1988-10-11 1989-10-11 반도체 집적회로와 그 제조방법 KR940002834B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63255213A JPH02101747A (ja) 1988-10-11 1988-10-11 半導体集積回路とその製造方法
JP88-255213 1988-10-11

Publications (2)

Publication Number Publication Date
KR900007103A true KR900007103A (ko) 1990-05-09
KR940002834B1 KR940002834B1 (ko) 1994-04-04

Family

ID=17275591

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890014558A KR940002834B1 (ko) 1988-10-11 1989-10-11 반도체 집적회로와 그 제조방법

Country Status (3)

Country Link
US (1) US5031020A (ko)
JP (1) JPH02101747A (ko)
KR (1) KR940002834B1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5104817A (en) * 1990-03-20 1992-04-14 Texas Instruments Incorporated Method of forming bipolar transistor with integral base emitter load resistor
KR970000425B1 (ko) * 1990-09-20 1997-01-09 이해욱 BiCMOS형 전계효과 트랜지스터 및 그의 제조방법
JPH05129554A (ja) * 1991-07-01 1993-05-25 Toshiba Corp ダイナミツク型半導体記憶装置
DE4220788A1 (de) * 1992-06-25 1994-01-20 Inst Halbleiterphysik Gmbh Halbleiteranordnung und damit aufgebaute Logikgrundschaltung
US5340754A (en) * 1992-09-02 1994-08-23 Motorla, Inc. Method for forming a transistor having a dynamic connection between a substrate and a channel region
US5441903A (en) * 1993-12-03 1995-08-15 Texas Instruments Incorporated BiCMOS process for supporting merged devices
US6489952B1 (en) * 1998-11-17 2002-12-03 Semiconductor Energy Laboratory Co., Ltd. Active matrix type semiconductor display device
KR102371917B1 (ko) * 2021-07-13 2022-03-08 유한회사 숲이엔지 배전 선로와 태양광 발전 선로용 전선 가공장치 및 이를 이용하여 가공된 가공 선로

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226181A (en) * 1975-08-22 1977-02-26 Nippon Telegr & Teleph Corp <Ntt> Semi-conductor integrated circuit unit
JPS59161059A (ja) * 1983-03-03 1984-09-11 Nec Corp 半導体装置
JPS6046064A (ja) * 1983-08-24 1985-03-12 Nec Corp 半導体装置
JPH0612818B2 (ja) * 1984-05-18 1994-02-16 松下電器産業株式会社 半導体装置
DE3650186T2 (de) * 1985-01-30 1995-05-24 Toshiba Kawasaki Kk Halbleiteranordnung und Verfahren zu deren Herstellung.
JPH0793383B2 (ja) * 1985-11-15 1995-10-09 株式会社日立製作所 半導体装置
US4868135A (en) * 1988-12-21 1989-09-19 International Business Machines Corporation Method for manufacturing a Bi-CMOS device

Also Published As

Publication number Publication date
JPH02101747A (ja) 1990-04-13
KR940002834B1 (ko) 1994-04-04
US5031020A (en) 1991-07-09

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