KR890013782A - 광전자집적회로 및 그 제조방법 - Google Patents

광전자집적회로 및 그 제조방법

Info

Publication number
KR890013782A
KR890013782A KR1019890002426A KR890002426A KR890013782A KR 890013782 A KR890013782 A KR 890013782A KR 1019890002426 A KR1019890002426 A KR 1019890002426A KR 890002426 A KR890002426 A KR 890002426A KR 890013782 A KR890013782 A KR 890013782A
Authority
KR
South Korea
Prior art keywords
manufacturing
integrated circuit
optoelectronic integrated
optoelectronic
circuit
Prior art date
Application number
KR1019890002426A
Other languages
English (en)
Other versions
KR920003445B1 (ko
Inventor
고로우 사사키
Original Assignee
스미도모덴기고오교오 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63046901A external-priority patent/JPH0644614B2/ja
Priority claimed from JP63046902A external-priority patent/JPH0644615B2/ja
Application filed by 스미도모덴기고오교오 가부시기가이샤 filed Critical 스미도모덴기고오교오 가부시기가이샤
Publication of KR890013782A publication Critical patent/KR890013782A/ko
Application granted granted Critical
Publication of KR920003445B1 publication Critical patent/KR920003445B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/119—Phosphides of gallium or indium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
KR1019890002426A 1988-02-29 1989-02-28 광전자집적회로 및 그 제조방법 KR920003445B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP63046901A JPH0644614B2 (ja) 1988-02-29 1988-02-29 光電子集積回路の製造方法
JP63-046901 1988-02-29
JP63046902A JPH0644615B2 (ja) 1988-02-29 1988-02-29 光電子集積回路の製造方法
JP63-046902 1988-02-29

Publications (2)

Publication Number Publication Date
KR890013782A true KR890013782A (ko) 1989-09-26
KR920003445B1 KR920003445B1 (ko) 1992-05-01

Family

ID=26387051

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890002426A KR920003445B1 (ko) 1988-02-29 1989-02-28 광전자집적회로 및 그 제조방법

Country Status (5)

Country Link
US (1) US4996163A (ko)
EP (1) EP0331103B1 (ko)
KR (1) KR920003445B1 (ko)
CA (1) CA1301897C (ko)
DE (1) DE68918306T2 (ko)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0392480B1 (en) * 1989-04-12 1997-03-12 Sumitomo Electric Industries, Ltd. Method of manufacturing a semiconductor integrated circuit device
JPH03236276A (ja) * 1990-02-14 1991-10-22 Ricoh Co Ltd 光機能素子
US5187110A (en) * 1990-10-05 1993-02-16 Allied-Signal Inc. Field effect transistor-bipolar transistor darlington pair
JPH04184973A (ja) * 1990-11-19 1992-07-01 Mitsubishi Electric Corp 長波長光送信ｏｅｉｃ
JP3086748B2 (ja) * 1991-07-26 2000-09-11 株式会社東芝 高電子移動度トランジスタ
KR970003902B1 (ko) * 1992-03-17 1997-03-22 가부시키가이샤 도시바 화합물반도체 집적회로 및 그 제조방법
JPH06163829A (ja) * 1992-07-31 1994-06-10 Texas Instr Inc <Ti> 集積回路とその製法
DE69502770T2 (de) * 1994-05-12 1999-02-04 Hitachi Europ Ltd Integrierte optoelektronische Schaltung
US5589404A (en) * 1994-08-01 1996-12-31 Lucent Technologies Inc. Monolithically integrated VLSI optoelectronic circuits and a method of fabricating the same
DE69522075T2 (de) 1994-11-02 2002-01-03 Trw Inc Verfahren zum Herstellen von multifunktionellen, monolithisch-integrierten Schaltungsanordnungen
US5535231A (en) * 1994-11-08 1996-07-09 Samsung Electronics Co., Ltd. Optoelectronic circuit including heterojunction bipolar transistor laser and photodetector
US5848088A (en) * 1995-07-11 1998-12-08 Seiko Epson Corporation Surface emission type semiconductor for laser with optical detector, method of manufacturing thereof, and sensor using the same
US5621227A (en) * 1995-07-18 1997-04-15 Discovery Semiconductors, Inc. Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy
US6037602A (en) * 1998-02-13 2000-03-14 C.P. Clare Corporation Photovoltaic generator circuit and method of making same
US6228673B1 (en) * 1999-05-13 2001-05-08 Hughes Electronics Corporation Method of fabricating a surface coupled InGaAs photodetector
JP2002033507A (ja) * 2000-07-18 2002-01-31 Nippon Sheet Glass Co Ltd 受光素子および光分波器
US6580139B1 (en) 2000-07-20 2003-06-17 Emcore Corporation Monolithically integrated sensing device and method of manufacture
JP2005129696A (ja) * 2003-10-23 2005-05-19 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
CN111969001A (zh) * 2019-05-20 2020-11-20 刁鸿浩 GaN基的单件集成的无机LED显示器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4352116A (en) * 1978-07-21 1982-09-28 California Institute Of Technology Solid state electro-optical devices on a semi-insulating substrate
JPS5670681A (en) * 1979-11-14 1981-06-12 Hitachi Ltd Semiconductor luminous element
JPS5844769A (ja) * 1981-09-10 1983-03-15 Fujitsu Ltd 半導体装置
JPS5951585A (ja) * 1982-09-17 1984-03-26 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US4608696A (en) * 1983-06-08 1986-08-26 Trw Inc. Integrated laser and field effect transistor
GB2145279B (en) * 1983-08-18 1987-10-21 Standard Telephones Cables Ltd Photodetector integrated circuit
JPS60193393A (ja) * 1984-03-15 1985-10-01 Matsushita Electric Ind Co Ltd 光集積回路装置
US4719498A (en) * 1984-05-18 1988-01-12 Fujitsu Limited Optoelectronic integrated circuit
US4551394A (en) * 1984-11-26 1985-11-05 Honeywell Inc. Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs
GB2168528B (en) * 1984-12-15 1988-07-13 Stc Plc Photo detector integrated circuit
DE3579453D1 (de) * 1985-04-23 1990-10-04 Agfa Gevaert Nv Monolithische integration von lichtemittierenden elementen und steuerelektronik.
JPS61270883A (ja) * 1985-05-25 1986-12-01 Fujitsu Ltd 光半導体装置
FR2595007B1 (fr) * 1986-02-25 1988-05-13 Thomson Csf Tete de detection optique realisee en optique integree et procede de realisation
JPS6356955A (ja) * 1986-08-27 1988-03-11 Fujitsu Ltd 光・電子集積回路装置
CA1274900A (en) * 1987-01-05 1990-10-02 Nec Corporation Field-effect transistor and the same associated with an optical semiconductor device

Also Published As

Publication number Publication date
DE68918306D1 (de) 1994-10-27
DE68918306T2 (de) 1995-05-18
KR920003445B1 (ko) 1992-05-01
CA1301897C (en) 1992-05-26
EP0331103A2 (en) 1989-09-06
EP0331103B1 (en) 1994-09-21
US4996163A (en) 1991-02-26
EP0331103A3 (en) 1990-12-27

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A201 Request for examination
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