KR900004023A - 광 집적 회로 제조방법과 이에 따른 표면에칭 방법 - Google Patents

광 집적 회로 제조방법과 이에 따른 표면에칭 방법

Info

Publication number
KR900004023A
KR900004023A KR1019890011972A KR890011972A KR900004023A KR 900004023 A KR900004023 A KR 900004023A KR 1019890011972 A KR1019890011972 A KR 1019890011972A KR 890011972 A KR890011972 A KR 890011972A KR 900004023 A KR900004023 A KR 900004023A
Authority
KR
South Korea
Prior art keywords
integrated circuit
circuit manufacturing
optical integrated
surface etching
etching method
Prior art date
Application number
KR1019890011972A
Other languages
English (en)
Other versions
KR0142207B1 (ko
Inventor
로슨 코크 토마스
코렌 우질
Original Assignee
에이 티 앤드 티 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이 티 앤드 티 코포레이션 filed Critical 에이 티 앤드 티 코포레이션
Publication of KR900004023A publication Critical patent/KR900004023A/ko
Application granted granted Critical
Publication of KR0142207B1 publication Critical patent/KR0142207B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/124—Geodesic lenses or integrated gratings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
KR1019890011972A 1988-08-26 1989-08-23 광 집적 회로 제조방법과 이에 따른 표면에칭 방법 KR0142207B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/237,251 US5147825A (en) 1988-08-26 1988-08-26 Photonic-integrated-circuit fabrication process
US237251 1988-08-26

Publications (2)

Publication Number Publication Date
KR900004023A true KR900004023A (ko) 1990-03-27
KR0142207B1 KR0142207B1 (ko) 1998-08-17

Family

ID=22892932

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890011972A KR0142207B1 (ko) 1988-08-26 1989-08-23 광 집적 회로 제조방법과 이에 따른 표면에칭 방법

Country Status (7)

Country Link
US (2) US5147825A (ko)
EP (2) EP0356190A3 (ko)
JP (1) JPH0652820B2 (ko)
KR (1) KR0142207B1 (ko)
CA (1) CA1326391C (ko)
DE (1) DE68928847T2 (ko)
ES (1) ES2123703T3 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100329681B1 (ko) * 1993-08-04 2002-08-14 가부시끼가이샤 히다치 세이사꾸쇼 반도체광집적회로및그제조방법

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US5147825A (en) * 1988-08-26 1992-09-15 Bell Telephone Laboratories, Inc. Photonic-integrated-circuit fabrication process
FR2656432B1 (fr) * 1989-12-22 1992-03-20 Thomson Csf Procede de realisation d'un dispositif optoelectronique amplificateur, dispositif obtenu par ce procede et applications a des dispositifs optoelectroniques divers.
EP0454902A3 (en) * 1990-05-03 1992-03-18 Siemens Aktiengesellschaft Monolithically integrated circuit with dfb laser diode, optical switch and waveguide connections
US5206920A (en) * 1991-02-01 1993-04-27 Siemens Aktiengesellschaft Integrated optical arrangement for demultiplexing a plurality of different wavelength channels and the method of manufacture
JP3263949B2 (ja) * 1991-02-25 2002-03-11 日本電気株式会社 光集積回路の製造方法
BE1006207A3 (nl) * 1992-09-24 1994-06-07 Imec Inter Uni Micro Electr Geintegreerd afstembaar optisch filter.
US5621828A (en) * 1992-09-24 1997-04-15 Interuniversitair Micro-Elektronica Centrum Vzw Integrated tunable optical filter
US5523256A (en) * 1993-07-21 1996-06-04 Matsushita Electric Industrial Co., Ltd. Method for producing a semiconductor laser
JP2682421B2 (ja) * 1993-12-28 1997-11-26 日本電気株式会社 半導体光集積回路の製造方法
KR970009670B1 (en) * 1994-03-30 1997-06-17 Samsung Electronics Co Ltd Method of manufacture for semiconductor laserdiode
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FR2736473B1 (fr) * 1995-07-06 1997-09-12 Boumedienne Mersali Dispositif laser a structure enterree pour circuit photonique integre et procede de fabrication
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KR100424774B1 (ko) * 1998-07-22 2004-05-17 삼성전자주식회사 선택영역회절격자형성과선택영역성장을위한마스크및이를이용한반도체소자의제조방법
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US7283694B2 (en) * 2001-10-09 2007-10-16 Infinera Corporation Transmitter photonic integrated circuits (TxPIC) and optical transport networks employing TxPICs
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US20080044128A1 (en) * 2001-10-09 2008-02-21 Infinera Corporation TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TxPICs) AND OPTICAL TRANSPORT NETWORK SYSTEM EMPLOYING TxPICs
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CN101625440B (zh) * 2008-07-09 2010-12-08 中国科学院半导体研究所 借助保护层的取样光栅的制作方法
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US9048618B2 (en) * 2013-03-12 2015-06-02 Finisar Corporation Short gain cavity distributed bragg reflector laser
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100329681B1 (ko) * 1993-08-04 2002-08-14 가부시끼가이샤 히다치 세이사꾸쇼 반도체광집적회로및그제조방법

Also Published As

Publication number Publication date
KR0142207B1 (ko) 1998-08-17
EP0356190A3 (en) 1991-03-20
CA1326391C (en) 1994-01-25
ES2123703T3 (es) 1999-01-16
DE68928847D1 (de) 1998-12-10
US5147825A (en) 1992-09-15
US5288659A (en) 1994-02-22
EP0604407B1 (en) 1998-11-04
EP0356190A2 (en) 1990-02-28
DE68928847T2 (de) 1999-05-12
EP0604407A2 (en) 1994-06-29
JPH02244691A (ja) 1990-09-28
EP0604407A3 (en) 1995-02-22
JPH0652820B2 (ja) 1994-07-06

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