DE68928847D1 - Fabrikationsverfahren für photonische, integrierte Schaltkreise - Google Patents

Fabrikationsverfahren für photonische, integrierte Schaltkreise

Info

Publication number
DE68928847D1
DE68928847D1 DE68928847T DE68928847T DE68928847D1 DE 68928847 D1 DE68928847 D1 DE 68928847D1 DE 68928847 T DE68928847 T DE 68928847T DE 68928847 T DE68928847 T DE 68928847T DE 68928847 D1 DE68928847 D1 DE 68928847D1
Authority
DE
Germany
Prior art keywords
photonic
manufacturing process
integrated circuits
circuits
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68928847T
Other languages
English (en)
Other versions
DE68928847T2 (de
Inventor
Thomas Lawson Koch
Uziel Koren
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE68928847D1 publication Critical patent/DE68928847D1/de
Application granted granted Critical
Publication of DE68928847T2 publication Critical patent/DE68928847T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/124—Geodesic lenses or integrated gratings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
DE68928847T 1988-08-26 1989-08-21 Fabrikationsverfahren für photonische, integrierte Schaltkreise Expired - Fee Related DE68928847T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/237,251 US5147825A (en) 1988-08-26 1988-08-26 Photonic-integrated-circuit fabrication process

Publications (2)

Publication Number Publication Date
DE68928847D1 true DE68928847D1 (de) 1998-12-10
DE68928847T2 DE68928847T2 (de) 1999-05-12

Family

ID=22892932

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68928847T Expired - Fee Related DE68928847T2 (de) 1988-08-26 1989-08-21 Fabrikationsverfahren für photonische, integrierte Schaltkreise

Country Status (7)

Country Link
US (2) US5147825A (de)
EP (2) EP0604407B1 (de)
JP (1) JPH0652820B2 (de)
KR (1) KR0142207B1 (de)
CA (1) CA1326391C (de)
DE (1) DE68928847T2 (de)
ES (1) ES2123703T3 (de)

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US5147825A (en) * 1988-08-26 1992-09-15 Bell Telephone Laboratories, Inc. Photonic-integrated-circuit fabrication process
FR2656432B1 (fr) * 1989-12-22 1992-03-20 Thomson Csf Procede de realisation d'un dispositif optoelectronique amplificateur, dispositif obtenu par ce procede et applications a des dispositifs optoelectroniques divers.
EP0454902A3 (en) * 1990-05-03 1992-03-18 Siemens Aktiengesellschaft Monolithically integrated circuit with dfb laser diode, optical switch and waveguide connections
US5206920A (en) * 1991-02-01 1993-04-27 Siemens Aktiengesellschaft Integrated optical arrangement for demultiplexing a plurality of different wavelength channels and the method of manufacture
JP3263949B2 (ja) * 1991-02-25 2002-03-11 日本電気株式会社 光集積回路の製造方法
US5621828A (en) * 1992-09-24 1997-04-15 Interuniversitair Micro-Elektronica Centrum Vzw Integrated tunable optical filter
BE1006207A3 (nl) * 1992-09-24 1994-06-07 Imec Inter Uni Micro Electr Geintegreerd afstembaar optisch filter.
US5523256A (en) * 1993-07-21 1996-06-04 Matsushita Electric Industrial Co., Ltd. Method for producing a semiconductor laser
JP3285426B2 (ja) * 1993-08-04 2002-05-27 株式会社日立製作所 半導体光集積素子及びその製造方法
JP2682421B2 (ja) * 1993-12-28 1997-11-26 日本電気株式会社 半導体光集積回路の製造方法
KR970009670B1 (en) * 1994-03-30 1997-06-17 Samsung Electronics Co Ltd Method of manufacture for semiconductor laserdiode
US5418183A (en) * 1994-09-19 1995-05-23 At&T Corp. Method for a reflective digitally tunable laser
EP0717482A1 (de) 1994-12-14 1996-06-19 AT&T Corp. Halbleiterinterferometer zur optischen Wellenlängenumwandlung
JP3675886B2 (ja) 1995-03-17 2005-07-27 株式会社半導体エネルギー研究所 薄膜半導体デバイスの作製方法
FR2736473B1 (fr) * 1995-07-06 1997-09-12 Boumedienne Mersali Dispositif laser a structure enterree pour circuit photonique integre et procede de fabrication
FR2743192B1 (fr) * 1995-12-28 1998-02-06 Alcatel Optronics Procede pour integrer un reseau de bragg localise dans un semi-conducteur
US6392256B1 (en) 1996-02-01 2002-05-21 Cielo Communications, Inc. Closely-spaced VCSEL and photodetector for applications requiring their independent operation
US6001664A (en) * 1996-02-01 1999-12-14 Cielo Communications, Inc. Method for making closely-spaced VCSEL and photodetector on a substrate
US6849866B2 (en) * 1996-10-16 2005-02-01 The University Of Connecticut High performance optoelectronic and electronic inversion channel quantum well devices suitable for monolithic integration
US5863809A (en) * 1997-03-28 1999-01-26 Lucent Technologies Inc. Manufacture of planar photonic integrated circuits
US6037644A (en) * 1997-09-12 2000-03-14 The Whitaker Corporation Semi-transparent monitor detector for surface emitting light emitting devices
US6275317B1 (en) 1998-03-10 2001-08-14 Agere Systems Optoelectronics Guardian Corp. Hybrid integration of a wavelength selectable laser source and optical amplifier/modulator
JP3298619B2 (ja) 1998-06-10 2002-07-02 日本電気株式会社 半導体レーザの製造方法
KR100424774B1 (ko) * 1998-07-22 2004-05-17 삼성전자주식회사 선택영역회절격자형성과선택영역성장을위한마스크및이를이용한반도체소자의제조방법
US6368890B1 (en) * 1999-05-05 2002-04-09 Mitel Semiconductor Ab Top contact VCSEL with monitor
US6782025B2 (en) * 2000-01-20 2004-08-24 Trumpf Photonics, Inc. High power distributed feedback ridge waveguide laser
US6829262B1 (en) * 2000-09-22 2004-12-07 Tri Quint Technology Holding Co. Aging in tunable semiconductor lasers
US6526193B1 (en) 2000-11-17 2003-02-25 National Research Council Of Canada Digital optical switch
JP2002164608A (ja) * 2000-11-27 2002-06-07 Mitsubishi Electric Corp 光半導体装置およびその製造方法
US7295783B2 (en) * 2001-10-09 2007-11-13 Infinera Corporation Digital optical network architecture
GB0124217D0 (en) * 2001-10-09 2001-11-28 Denselight Semiconductors Pte Two-section distributed bragg reflector laser
US7672546B2 (en) 2001-10-09 2010-03-02 Infinera Corporation Optical transport network having a plurality of monolithic photonic integrated circuit semiconductor chips
US20080044128A1 (en) * 2001-10-09 2008-02-21 Infinera Corporation TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TxPICs) AND OPTICAL TRANSPORT NETWORK SYSTEM EMPLOYING TxPICs
US7751658B2 (en) * 2001-10-09 2010-07-06 Infinera Corporation Monolithic transmitter photonic integrated circuit (TxPIC) having tunable modulated sources with feedback system for source power level or wavelength tuning
US20030099420A1 (en) * 2001-11-13 2003-05-29 Achintya Bhowmik Electro-optic modulator
US7006719B2 (en) * 2002-03-08 2006-02-28 Infinera Corporation In-wafer testing of integrated optical components in photonic integrated circuits (PICs)
US7747114B2 (en) * 2002-10-08 2010-06-29 Infinera Corporation Tilted combiners/decombiners and photonic integrated circuits (PICs) employing the same
US6841795B2 (en) * 2002-10-25 2005-01-11 The University Of Connecticut Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
KR100519921B1 (ko) * 2002-12-17 2005-10-10 한국전자통신연구원 초고주파 펄스 광원소자
US6974969B2 (en) 2003-01-13 2005-12-13 The University Of Connecticut P-type quantum-well-base bipolar transistor device employing interdigitated base and emitter formed with a capping layer
JP2004241697A (ja) * 2003-02-07 2004-08-26 Renesas Technology Corp 半導体ウェハの製造管理装置
US7333731B2 (en) * 2004-04-26 2008-02-19 The University Of Connecticut Multifunctional optoelectronic thyristor and integrated circuit and optical transceiver employing same
US7877016B2 (en) * 2004-10-28 2011-01-25 Infinera Corporation Photonic integrated circuit (PIC) transceivers for an optical line terminal (OLT) and an optical network unit (ONU) in passive optical networks (PONs)
KR100842277B1 (ko) * 2006-12-07 2008-06-30 한국전자통신연구원 반사형 반도체 광증폭기 및 수퍼 루미네센스 다이오드
CN101625440B (zh) * 2008-07-09 2010-12-08 中国科学院半导体研究所 借助保护层的取样光栅的制作方法
SE0950938A1 (sv) * 2009-12-04 2011-06-05 Ekklippan Ab Optisk kopplare
KR20120070836A (ko) * 2010-12-22 2012-07-02 한국전자통신연구원 다파장 광 발생 장치
US20120294320A1 (en) * 2011-03-18 2012-11-22 University College Cork, National University Of Ireland Tunable laser system and method
JP2012248812A (ja) * 2011-05-31 2012-12-13 Sumitomo Electric Ind Ltd 半導体光集積素子の製造方法
US9048618B2 (en) * 2013-03-12 2015-06-02 Finisar Corporation Short gain cavity distributed bragg reflector laser
JP5773552B2 (ja) * 2013-09-20 2015-09-02 沖電気工業株式会社 光素子の製造方法及び光素子
US10128635B2 (en) 2015-11-12 2018-11-13 BB Photonics Inc. Photonic integrated device with dielectric structure
JP7431250B2 (ja) * 2019-04-11 2024-02-14 アプライド マテリアルズ インコーポレイテッド マルチ深度光学デバイスのパターニング
CN113328339B (zh) * 2021-05-27 2022-11-25 华中科技大学 一种高功率分布反馈激光器
CN116387976B (zh) * 2023-06-05 2023-12-29 福建慧芯激光科技有限公司 一种具有内嵌式多阶光栅的边发射激光器的制备方法

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Also Published As

Publication number Publication date
CA1326391C (en) 1994-01-25
DE68928847T2 (de) 1999-05-12
KR900004023A (ko) 1990-03-27
EP0604407B1 (de) 1998-11-04
EP0356190A3 (de) 1991-03-20
EP0604407A2 (de) 1994-06-29
US5288659A (en) 1994-02-22
EP0356190A2 (de) 1990-02-28
EP0604407A3 (de) 1995-02-22
JPH0652820B2 (ja) 1994-07-06
ES2123703T3 (es) 1999-01-16
JPH02244691A (ja) 1990-09-28
KR0142207B1 (ko) 1998-08-17
US5147825A (en) 1992-09-15

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee