DE69023541T2 - Kontaktstruktur für integrierte Halbleiterschaltung. - Google Patents

Kontaktstruktur für integrierte Halbleiterschaltung.

Info

Publication number
DE69023541T2
DE69023541T2 DE69023541T DE69023541T DE69023541T2 DE 69023541 T2 DE69023541 T2 DE 69023541T2 DE 69023541 T DE69023541 T DE 69023541T DE 69023541 T DE69023541 T DE 69023541T DE 69023541 T2 DE69023541 T2 DE 69023541T2
Authority
DE
Germany
Prior art keywords
integrated circuit
semiconductor integrated
contact structure
contact
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69023541T
Other languages
English (en)
Other versions
DE69023541D1 (de
Inventor
Syd Robert Wilson
James A Sellers
Robert J Mattox
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE69023541D1 publication Critical patent/DE69023541D1/de
Application granted granted Critical
Publication of DE69023541T2 publication Critical patent/DE69023541T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/7688—Filling of holes, grooves or trenches, e.g. vias, with conductive material by deposition over sacrificial masking layer, e.g. lift-off
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/97—Specified etch stop material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69023541T 1989-05-09 1990-05-09 Kontaktstruktur für integrierte Halbleiterschaltung. Expired - Fee Related DE69023541T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/350,665 US4943539A (en) 1989-05-09 1989-05-09 Process for making a multilayer metallization structure

Publications (2)

Publication Number Publication Date
DE69023541D1 DE69023541D1 (de) 1995-12-21
DE69023541T2 true DE69023541T2 (de) 1996-05-30

Family

ID=23377682

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69023541T Expired - Fee Related DE69023541T2 (de) 1989-05-09 1990-05-09 Kontaktstruktur für integrierte Halbleiterschaltung.

Country Status (4)

Country Link
US (1) US4943539A (de)
EP (1) EP0397462B1 (de)
JP (1) JPH02308552A (de)
DE (1) DE69023541T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015205028A1 (de) * 2014-12-19 2016-06-23 Volkswagen Aktiengesellschaft Elektrische Maschine und Kontaktanordnung dafür

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DE3727142C2 (de) * 1987-08-14 1994-02-24 Kernforschungsz Karlsruhe Verfahren zur Herstellung von Mikrosensoren mit integrierter Signalverarbeitung
JPH03190232A (ja) * 1989-12-20 1991-08-20 Fujitsu Ltd 半導体装置の製造方法
US5286674A (en) * 1992-03-02 1994-02-15 Motorola, Inc. Method for forming a via structure and semiconductor device having the same
US5817574A (en) * 1993-12-29 1998-10-06 Intel Corporation Method of forming a high surface area interconnection structure
JPH08511659A (ja) * 1994-04-07 1996-12-03 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 半導体本体表面に多層配線構造が設けられた半導体装置の製造方法
US5451543A (en) * 1994-04-25 1995-09-19 Motorola, Inc. Straight sidewall profile contact opening to underlying interconnect and method for making the same
US5696030A (en) * 1994-09-30 1997-12-09 International Business Machines Corporation Integrated circuit contacts having improved electromigration characteristics and fabrication methods therefor
KR0138308B1 (ko) 1994-12-14 1998-06-01 김광호 층간접촉구조 및 그 방법
JPH08306774A (ja) * 1995-05-01 1996-11-22 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
US5897374A (en) * 1995-05-22 1999-04-27 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical via/contact with undercut dielectric
US5702981A (en) * 1995-09-29 1997-12-30 Maniar; Papu D. Method for forming a via in a semiconductor device
KR100214467B1 (ko) * 1995-12-29 1999-08-02 구본준 반도체소자의 배선구조 형성방법
US5661083A (en) * 1996-01-30 1997-08-26 Integrated Device Technology, Inc. Method for via formation with reduced contact resistance
JP3961044B2 (ja) * 1996-05-14 2007-08-15 シャープ株式会社 電子回路装置
US5912188A (en) * 1997-08-04 1999-06-15 Advanced Micro Devices, Inc. Method of forming a contact hole in an interlevel dielectric layer using dual etch stops
US5935766A (en) * 1997-08-07 1999-08-10 Advanced Micro Devices, Inc. Method of forming a conductive plug in an interlevel dielectric
KR100269328B1 (ko) * 1997-12-31 2000-10-16 윤종용 원자층 증착 공정을 이용하는 도전층 형성방법
US6576547B2 (en) 1998-03-05 2003-06-10 Micron Technology, Inc. Residue-free contact openings and methods for fabricating same
KR100524905B1 (ko) * 1998-07-14 2005-12-21 삼성전자주식회사 앵커 형상의 비아 콘택 형성방법
US6177802B1 (en) 1998-08-10 2001-01-23 Advanced Micro Devices, Inc. System and method for detecting defects in an interlayer dielectric of a semiconductor device using the hall-effect
US6023327A (en) * 1998-08-10 2000-02-08 Advanced Micro Devices, Inc. System and method for detecting defects in an interlayer dielectric of a semiconductor device
US6319822B1 (en) * 1998-10-01 2001-11-20 Taiwan Semiconductor Manufacturing Company Process for forming an integrated contact or via
CA2281047A1 (en) * 1998-10-14 2000-04-14 Premark Rwp Holdings, Inc. Solid surface veneer foam core profile top and methods for making and using same
JP2001127151A (ja) * 1999-10-26 2001-05-11 Fujitsu Ltd 半導体装置およびその製造方法
CN100401488C (zh) 2001-03-23 2008-07-09 Nxp股份有限公司 具有小回路高度的接线连接的片状模块
DE10140468B4 (de) * 2001-08-17 2006-01-05 Infineon Technologies Ag Verfahren zur Erzeugung von Kontaktlöchern auf einer Metallisierungsstruktur
US7417259B2 (en) * 2002-08-29 2008-08-26 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting elements
DE10257681B4 (de) * 2002-12-10 2008-11-13 Infineon Technologies Ag Verfahren zum Herstellen einer integrierten Schaltungsanordnung, die eine Metallnitridschicht enthält, und integrierte Schaltungsanordnung
US6969909B2 (en) * 2002-12-20 2005-11-29 Vlt, Inc. Flip chip FET device
US7038917B2 (en) * 2002-12-27 2006-05-02 Vlt, Inc. Low loss, high density array interconnection
KR100571673B1 (ko) * 2003-08-22 2006-04-17 동부아남반도체 주식회사 반도체 소자의 비아 홀 형성 방법
DE102004029519A1 (de) * 2004-06-18 2006-01-12 Infineon Technologies Ag Verfahren zum Herstellen einer Schicht-Anordnung
US7485966B2 (en) * 2005-04-11 2009-02-03 Via Technologies, Inc. Via connection structure with a compensative area on the reference plane
DE102006035645B4 (de) * 2006-07-31 2012-03-08 Advanced Micro Devices, Inc. Verfahren zum Ausbilden einer elektrisch leitfähigen Leitung in einem integrierten Schaltkreis
JP4510796B2 (ja) * 2006-11-22 2010-07-28 株式会社アルバック 磁気記憶媒体の製造方法
JP2009032794A (ja) * 2007-07-25 2009-02-12 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US8242006B2 (en) 2007-12-21 2012-08-14 General Electric Company Smooth electrode and method of fabricating same
US10854505B2 (en) 2016-03-24 2020-12-01 Taiwan Semiconductor Manufacturing Company, Ltd. Removing polymer through treatment
US10381448B2 (en) * 2016-05-26 2019-08-13 Tokyo Electron Limited Wrap-around contact integration scheme
US11232977B2 (en) * 2020-02-11 2022-01-25 International Business Machines Corporation Stepped top via for via resistance reduction
CN114256136B (zh) * 2020-09-22 2024-03-26 长鑫存储技术有限公司 接触窗结构、金属插塞及其形成方法、半导体结构

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JPS5768035A (en) * 1980-10-15 1982-04-26 Toshiba Corp Manufacture of semiconductor device
US4507852A (en) * 1983-09-12 1985-04-02 Rockwell International Corporation Method for making a reliable ohmic contact between two layers of integrated circuit metallizations
JPS60136337A (ja) * 1983-12-22 1985-07-19 モノリシツク・メモリ−ズ・インコ−ポレイテツド ２重層処理においてヒロツク抑制層を形成する方法及びその構造物
JPH0642482B2 (ja) * 1984-11-15 1994-06-01 株式会社東芝 半導体装置の製造方法
JPS61166075A (ja) * 1985-01-17 1986-07-26 Mitsubishi Electric Corp 半導体装置およびその製造方法
FR2583573B1 (fr) * 1985-06-18 1988-04-08 Thomson Csf Procede de realisation d'un dispositif semi-conducteur a plusieurs niveaux de grille.
US4767724A (en) * 1986-03-27 1988-08-30 General Electric Company Unframed via interconnection with dielectric etch stop
US4786962A (en) * 1986-06-06 1988-11-22 Hewlett-Packard Company Process for fabricating multilevel metal integrated circuits and structures produced thereby
JPH0691090B2 (ja) * 1986-10-31 1994-11-14 富士通株式会社 半導体装置の製造方法
FR2610142B1 (fr) * 1987-01-23 1989-05-26 Lami Philippe Procede de formation de trous de passage metallises de hauteurs inegales
US4826785A (en) * 1987-01-27 1989-05-02 Inmos Corporation Metallic fuse with optically absorptive layer
DE3815569A1 (de) * 1987-05-07 1988-12-29 Intel Corp Verfahren zum selektiven abscheiden eines leitenden materials bei der herstellung integrierter schaltungen
US4824803A (en) * 1987-06-22 1989-04-25 Standard Microsystems Corporation Multilayer metallization method for integrated circuits
US4839311A (en) * 1987-08-14 1989-06-13 National Semiconductor Corporation Etch back detection
JPS6480024A (en) * 1987-09-22 1989-03-24 Toshiba Corp Semiconductor device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015205028A1 (de) * 2014-12-19 2016-06-23 Volkswagen Aktiengesellschaft Elektrische Maschine und Kontaktanordnung dafür

Also Published As

Publication number Publication date
DE69023541D1 (de) 1995-12-21
EP0397462B1 (de) 1995-11-15
EP0397462A3 (de) 1991-04-17
EP0397462A2 (de) 1990-11-14
JPH02308552A (ja) 1990-12-21
US4943539A (en) 1990-07-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee