ES2123703T3 - Proceso de fabricacion de circuitos integrados fotonicos. - Google Patents

Proceso de fabricacion de circuitos integrados fotonicos.

Info

Publication number
ES2123703T3
ES2123703T3 ES94200395T ES94200395T ES2123703T3 ES 2123703 T3 ES2123703 T3 ES 2123703T3 ES 94200395 T ES94200395 T ES 94200395T ES 94200395 T ES94200395 T ES 94200395T ES 2123703 T3 ES2123703 T3 ES 2123703T3
Authority
ES
Spain
Prior art keywords
attack
acid
masking layer
area
masking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES94200395T
Other languages
English (en)
Inventor
Thomas Lawson Koch
Uziel Koren
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of ES2123703T3 publication Critical patent/ES2123703T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/124—Geodesic lenses or integrated gratings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking

Abstract

SE PRESENTA UN PROCESO PARA ATACAR AL ACIDO MODELOS ONDULADOS, PARA DISPOSITIVOS DE RETROALIMENTACION DISTRIBUIDA (DFB) O REFLECTORES DE BRAGG DISTRIBUIDOS (DBR). UNA CAPA DE ENMASCARAMIENTO SE DEPOSITA SOBRE EL AREA ADYACENTE AL AREA CUANDO SE REQUIERE LA ONDULACION. UNA ENMASCARAMIENTO DIBUJADA DE ONDULACION SE FORMA SOBRE LA CAPA DE ENMASCARAMIENTO ASI COMO SOBRE EL AREA DONDE SE REQUIERE LA ONDULACION Y SE LLEVA A CABO EL ATAQUE AL ACIDO PARA FORMAR ONDULACIONES (62) EN LA CAPA DE ENMASCARAMIENTO ASI COMO LAS ONDULACIONES DESEADA (61). LA CAPA DE ENMASCARAMIENTO PUEDE SER RETIRADA. EL MATERIAL DE LA CAPA DE ENMASCARAMIENTO SE ELIGE PARA ATACAR AL ACIDO A LA MISMA VELOCIDAD, Y ASI PARA AGOTAR LA CONCENTRACION DEL DECAPANTE ATAQUE A ACIDO POR LA MISMA CANTIDAD, CUANDO EL MATERIAL EN EL QUE SE REQUIERES LAS ONDULACIONES. ASI SE EVITAN CONCENTRACIONES MAYORES DE DECAPANTE CERCA DEL BORDE DE LA CAPA DE ENMASCARAMIENTO, Y EVITAR UN SOBREATAQUE AL ACIDO CONSECUENTE.
ES94200395T 1988-08-26 1989-08-21 Proceso de fabricacion de circuitos integrados fotonicos. Expired - Lifetime ES2123703T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/237,251 US5147825A (en) 1988-08-26 1988-08-26 Photonic-integrated-circuit fabrication process

Publications (1)

Publication Number Publication Date
ES2123703T3 true ES2123703T3 (es) 1999-01-16

Family

ID=22892932

Family Applications (1)

Application Number Title Priority Date Filing Date
ES94200395T Expired - Lifetime ES2123703T3 (es) 1988-08-26 1989-08-21 Proceso de fabricacion de circuitos integrados fotonicos.

Country Status (7)

Country Link
US (2) US5147825A (es)
EP (2) EP0604407B1 (es)
JP (1) JPH0652820B2 (es)
KR (1) KR0142207B1 (es)
CA (1) CA1326391C (es)
DE (1) DE68928847T2 (es)
ES (1) ES2123703T3 (es)

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US5147825A (en) * 1988-08-26 1992-09-15 Bell Telephone Laboratories, Inc. Photonic-integrated-circuit fabrication process
FR2656432B1 (fr) * 1989-12-22 1992-03-20 Thomson Csf Procede de realisation d'un dispositif optoelectronique amplificateur, dispositif obtenu par ce procede et applications a des dispositifs optoelectroniques divers.
EP0454902A3 (en) * 1990-05-03 1992-03-18 Siemens Aktiengesellschaft Monolithically integrated circuit with dfb laser diode, optical switch and waveguide connections
US5206920A (en) * 1991-02-01 1993-04-27 Siemens Aktiengesellschaft Integrated optical arrangement for demultiplexing a plurality of different wavelength channels and the method of manufacture
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BE1006207A3 (nl) * 1992-09-24 1994-06-07 Imec Inter Uni Micro Electr Geintegreerd afstembaar optisch filter.
US5523256A (en) * 1993-07-21 1996-06-04 Matsushita Electric Industrial Co., Ltd. Method for producing a semiconductor laser
JP3285426B2 (ja) * 1993-08-04 2002-05-27 株式会社日立製作所 半導体光集積素子及びその製造方法
JP2682421B2 (ja) * 1993-12-28 1997-11-26 日本電気株式会社 半導体光集積回路の製造方法
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US5418183A (en) * 1994-09-19 1995-05-23 At&T Corp. Method for a reflective digitally tunable laser
EP0717482A1 (en) 1994-12-14 1996-06-19 AT&T Corp. Semiconductor interferometric optical wavelength conversion device
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FR2736473B1 (fr) * 1995-07-06 1997-09-12 Boumedienne Mersali Dispositif laser a structure enterree pour circuit photonique integre et procede de fabrication
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JP3298619B2 (ja) 1998-06-10 2002-07-02 日本電気株式会社 半導体レーザの製造方法
KR100424774B1 (ko) * 1998-07-22 2004-05-17 삼성전자주식회사 선택영역회절격자형성과선택영역성장을위한마스크및이를이용한반도체소자의제조방법
US6368890B1 (en) * 1999-05-05 2002-04-09 Mitel Semiconductor Ab Top contact VCSEL with monitor
US6782025B2 (en) * 2000-01-20 2004-08-24 Trumpf Photonics, Inc. High power distributed feedback ridge waveguide laser
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US6526193B1 (en) 2000-11-17 2003-02-25 National Research Council Of Canada Digital optical switch
JP2002164608A (ja) * 2000-11-27 2002-06-07 Mitsubishi Electric Corp 光半導体装置およびその製造方法
US7751658B2 (en) * 2001-10-09 2010-07-06 Infinera Corporation Monolithic transmitter photonic integrated circuit (TxPIC) having tunable modulated sources with feedback system for source power level or wavelength tuning
US7672546B2 (en) * 2001-10-09 2010-03-02 Infinera Corporation Optical transport network having a plurality of monolithic photonic integrated circuit semiconductor chips
EP1436870A2 (en) * 2001-10-09 2004-07-14 Infinera Corporation TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TxPIC) AND OPTICAL TRANSPORT NETWORKS EMPLOYING TxPICs
GB0124217D0 (en) * 2001-10-09 2001-11-28 Denselight Semiconductors Pte Two-section distributed bragg reflector laser
US20080044128A1 (en) * 2001-10-09 2008-02-21 Infinera Corporation TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TxPICs) AND OPTICAL TRANSPORT NETWORK SYSTEM EMPLOYING TxPICs
US20030099420A1 (en) * 2001-11-13 2003-05-29 Achintya Bhowmik Electro-optic modulator
US7006719B2 (en) * 2002-03-08 2006-02-28 Infinera Corporation In-wafer testing of integrated optical components in photonic integrated circuits (PICs)
US7747114B2 (en) * 2002-10-08 2010-06-29 Infinera Corporation Tilted combiners/decombiners and photonic integrated circuits (PICs) employing the same
US6841795B2 (en) * 2002-10-25 2005-01-11 The University Of Connecticut Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
KR100519921B1 (ko) * 2002-12-17 2005-10-10 한국전자통신연구원 초고주파 펄스 광원소자
US6974969B2 (en) 2003-01-13 2005-12-13 The University Of Connecticut P-type quantum-well-base bipolar transistor device employing interdigitated base and emitter formed with a capping layer
JP2004241697A (ja) * 2003-02-07 2004-08-26 Renesas Technology Corp 半導体ウェハの製造管理装置
US7333731B2 (en) * 2004-04-26 2008-02-19 The University Of Connecticut Multifunctional optoelectronic thyristor and integrated circuit and optical transceiver employing same
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CN101625440B (zh) * 2008-07-09 2010-12-08 中国科学院半导体研究所 借助保护层的取样光栅的制作方法
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KR20120070836A (ko) * 2010-12-22 2012-07-02 한국전자통신연구원 다파장 광 발생 장치
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US9048618B2 (en) * 2013-03-12 2015-06-02 Finisar Corporation Short gain cavity distributed bragg reflector laser
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JP7431250B2 (ja) 2019-04-11 2024-02-14 アプライド マテリアルズ インコーポレイテッド マルチ深度光学デバイスのパターニング
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Also Published As

Publication number Publication date
US5288659A (en) 1994-02-22
DE68928847D1 (de) 1998-12-10
EP0604407B1 (en) 1998-11-04
DE68928847T2 (de) 1999-05-12
EP0604407A3 (en) 1995-02-22
JPH0652820B2 (ja) 1994-07-06
EP0604407A2 (en) 1994-06-29
JPH02244691A (ja) 1990-09-28
KR900004023A (ko) 1990-03-27
US5147825A (en) 1992-09-15
EP0356190A3 (en) 1991-03-20
CA1326391C (en) 1994-01-25
KR0142207B1 (ko) 1998-08-17
EP0356190A2 (en) 1990-02-28

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