KR910010637A - 에칭방법 및 에칭장치 - Google Patents

에칭방법 및 에칭장치

Info

Publication number
KR910010637A
KR910010637A KR1019900018277A KR900018277A KR910010637A KR 910010637 A KR910010637 A KR 910010637A KR 1019900018277 A KR1019900018277 A KR 1019900018277A KR 900018277 A KR900018277 A KR 900018277A KR 910010637 A KR910010637 A KR 910010637A
Authority
KR
South Korea
Prior art keywords
etching
etching method
etching device
Prior art date
Application number
KR1019900018277A
Other languages
English (en)
Other versions
KR0176703B1 (ko
Inventor
도시하루 야나기다
Original Assignee
소니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17865810&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR910010637(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 소니 가부시기가이샤 filed Critical 소니 가부시기가이샤
Publication of KR910010637A publication Critical patent/KR910010637A/ko
Application granted granted Critical
Publication of KR0176703B1 publication Critical patent/KR0176703B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
KR1019900018277A 1989-11-17 1990-11-13 에칭방법 및 에칭장치 KR0176703B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP89-298914 1989-11-17
JP1298914A JP3033104B2 (ja) 1989-11-17 1989-11-17 エッチング方法

Publications (2)

Publication Number Publication Date
KR910010637A true KR910010637A (ko) 1991-06-29
KR0176703B1 KR0176703B1 (ko) 1999-04-15

Family

ID=17865810

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900018277A KR0176703B1 (ko) 1989-11-17 1990-11-13 에칭방법 및 에칭장치

Country Status (4)

Country Link
US (2) US5160398A (ko)
EP (1) EP0429251A3 (ko)
JP (1) JP3033104B2 (ko)
KR (1) KR0176703B1 (ko)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5376211A (en) * 1990-09-29 1994-12-27 Tokyo Electron Limited Magnetron plasma processing apparatus and processing method
DE4118973C2 (de) * 1991-06-08 1999-02-04 Fraunhofer Ges Forschung Vorrichtung zur plasmaunterstützten Bearbeitung von Substraten und Verwendung dieser Vorrichtung
JP3146561B2 (ja) * 1991-06-24 2001-03-19 株式会社デンソー 半導体装置の製造方法
JPH06232099A (ja) * 1992-09-10 1994-08-19 Mitsubishi Electric Corp 半導体装置の製造方法，半導体装置の製造装置，半導体レーザの製造方法，量子細線構造の製造方法，及び結晶成長方法
US5433786A (en) * 1993-08-27 1995-07-18 The Dow Chemical Company Apparatus for plasma enhanced chemical vapor deposition comprising shower head electrode with magnet disposed therein
US5557172A (en) * 1993-12-21 1996-09-17 Sumitomo Heavy Industries, Ltd. Plasma beam generating method and apparatus which can generate a high-power plasma beam
WO1996016437A1 (en) 1994-11-18 1996-05-30 Advanced Micro Devices, Inc. Silicon nitride etch process with critical dimension gain
US5728261A (en) * 1995-05-26 1998-03-17 University Of Houston Magnetically enhanced radio frequency reactive ion etching method and apparatus
US5626716A (en) * 1995-09-29 1997-05-06 Lam Research Corporation Plasma etching of semiconductors
TW303480B (en) 1996-01-24 1997-04-21 Applied Materials Inc Magnetically confined plasma reactor for processing a semiconductor wafer
US5993598A (en) * 1996-07-30 1999-11-30 The Dow Chemical Company Magnetron
US5900284A (en) * 1996-07-30 1999-05-04 The Dow Chemical Company Plasma generating device and method
US5759920A (en) * 1996-11-15 1998-06-02 International Business Machines Corporation Process for making doped polysilicon layers on sidewalls
US6303045B1 (en) * 1997-03-20 2001-10-16 Lam Research Corporation Methods and apparatus for etching a nitride layer in a variable-gap plasma processing chamber
US6393685B1 (en) 1997-06-10 2002-05-28 The Regents Of The University Of California Microjoinery methods and devices
US6055929A (en) * 1997-09-24 2000-05-02 The Dow Chemical Company Magnetron
US6645353B2 (en) * 1997-12-31 2003-11-11 Intel Corporation Approach to optimizing an ILD argon sputter process
US6066566A (en) * 1998-01-28 2000-05-23 International Business Machines Corporation High selectivity collar oxide etch processes
US6133153A (en) * 1998-03-30 2000-10-17 Lam Research Corporation Self-aligned contacts for semiconductor device
JPH11307512A (ja) * 1998-04-23 1999-11-05 Sony Corp エッチング方法
JP4066214B2 (ja) * 1998-07-24 2008-03-26 財団法人国際科学振興財団 プラズマプロセス装置
US6417013B1 (en) 1999-01-29 2002-07-09 Plasma-Therm, Inc. Morphed processing of semiconductor devices
JP2000336112A (ja) 1999-06-01 2000-12-05 Idemitsu Petrochem Co Ltd 有機ケイ素化合物、オレフィン重合体製造用触媒およびオレフィン重合体の製造方法
US6270634B1 (en) * 1999-10-29 2001-08-07 Applied Materials, Inc. Method for plasma etching at a high etch rate
US20010047838A1 (en) * 2000-03-28 2001-12-06 Segal Vladimir M. Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions
US6863835B1 (en) 2000-04-25 2005-03-08 James D. Carducci Magnetic barrier for plasma in chamber exhaust
US6803318B1 (en) * 2000-09-14 2004-10-12 Cypress Semiconductor Corp. Method of forming self aligned contacts
US6559062B1 (en) 2000-11-15 2003-05-06 Agere Systems, Inc. Method for avoiding notching in a semiconductor interconnect during a metal etching step
KR100403616B1 (ko) * 2001-01-03 2003-10-30 삼성전자주식회사 플라즈마 장치에 의한 플라즈마 처리 공정의 시뮬레이션방법
US7297577B2 (en) * 2004-12-30 2007-11-20 Sony Corporation SOI SRAM device structure with increased W and full depletion
JP5065726B2 (ja) * 2007-03-26 2012-11-07 株式会社アルバック ドライエッチング方法
US10460968B2 (en) 2013-12-02 2019-10-29 Applied Materials, Inc. Electrostatic chuck with variable pixelated magnetic field

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US806381A (en) * 1905-08-15 1905-12-05 John Franklin Weller Furnace-door frame and means of cooling.
FR2082505A5 (ko) * 1970-03-18 1971-12-10 Radiotechnique Compelec
JPS5368171A (en) * 1976-11-30 1978-06-17 Hitachi Ltd Method and apparatus for plasma treatment
JPS5744749A (en) * 1980-08-27 1982-03-13 Honda Motor Co Ltd Controlling device of secondary air in suction air sistem of internal combustion engine
JPS57149734A (en) * 1981-03-12 1982-09-16 Anelva Corp Plasma applying working device
JPS6011109A (ja) * 1983-07-01 1985-01-21 Nippon Steel Corp 電磁超音波測定装置
JPS6189635A (ja) * 1984-10-09 1986-05-07 Toshiba Corp 微細加工方法
JPS61190944A (ja) * 1985-02-20 1986-08-25 Hitachi Chiyou Lsi Eng Kk ドライエツチング装置
US4631248A (en) * 1985-06-21 1986-12-23 Lsi Logic Corporation Method for forming an electrical contact in an integrated circuit
US4657619A (en) * 1985-11-29 1987-04-14 Donnell Kevin P O Diverter magnet arrangement for plasma processing system
DE3615519A1 (de) * 1986-05-07 1987-11-12 Siemens Ag Verfahren zum erzeugen von kontaktloechern mit abgeschraegten flanken in zwischenoxidschichten
US4842707A (en) * 1986-06-23 1989-06-27 Oki Electric Industry Co., Ltd. Dry process apparatus
JPS6381928A (ja) * 1986-09-26 1988-04-12 Hitachi Ltd ドライエツチング装置
JPS63192229A (ja) * 1987-02-03 1988-08-09 Sumitomo Metal Ind Ltd プラズマプロセス装置
EP0282820A1 (de) * 1987-03-13 1988-09-21 Siemens Aktiengesellschaft Verfahren zum Erzeugen von Kontaktlöchern mit abgeschrägten Flanken in Zwischenoxidschichten

Also Published As

Publication number Publication date
KR0176703B1 (ko) 1999-04-15
EP0429251A3 (en) 1992-04-15
JP3033104B2 (ja) 2000-04-17
US5314575A (en) 1994-05-24
JPH03159235A (ja) 1991-07-09
US5160398A (en) 1992-11-03
EP0429251A2 (en) 1991-05-29

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