DE3889649D1 - Ätzverfahren und -gerät. - Google Patents

Ätzverfahren und -gerät.

Info

Publication number
DE3889649D1
DE3889649D1 DE3889649T DE3889649T DE3889649D1 DE 3889649 D1 DE3889649 D1 DE 3889649D1 DE 3889649 T DE3889649 T DE 3889649T DE 3889649 T DE3889649 T DE 3889649T DE 3889649 D1 DE3889649 D1 DE 3889649D1
Authority
DE
Germany
Prior art keywords
etching process
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3889649T
Other languages
English (en)
Other versions
DE3889649T2 (de
Inventor
Takao Horiuchi
Izumi Arai
Yoshifumi Tahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62333613A external-priority patent/JP2673526B2/ja
Priority claimed from JP63014195A external-priority patent/JPH07111965B2/ja
Priority claimed from JP63014197A external-priority patent/JPH01189126A/ja
Priority claimed from JP63014196A external-priority patent/JP2594448B2/ja
Priority claimed from JP2979288A external-priority patent/JPH0691042B2/ja
Priority claimed from JP63053280A external-priority patent/JPH01227438A/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE3889649D1 publication Critical patent/DE3889649D1/de
Publication of DE3889649T2 publication Critical patent/DE3889649T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
DE3889649T 1987-12-25 1988-12-23 Ätzverfahren und -gerät. Expired - Fee Related DE3889649T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP62333613A JP2673526B2 (ja) 1987-12-25 1987-12-25 エッチング装置
JP63014195A JPH07111965B2 (ja) 1988-01-25 1988-01-25 エッチング装置
JP63014197A JPH01189126A (ja) 1988-01-25 1988-01-25 エッチング装置
JP63014196A JP2594448B2 (ja) 1988-01-25 1988-01-25 被処理体のエッチング方法
JP2979288A JPH0691042B2 (ja) 1988-02-09 1988-02-09 エッチング装置
JP63053280A JPH01227438A (ja) 1988-03-07 1988-03-07 半導体基板用載置台

Publications (2)

Publication Number Publication Date
DE3889649D1 true DE3889649D1 (de) 1994-06-23
DE3889649T2 DE3889649T2 (de) 1994-09-29

Family

ID=27548499

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3889649T Expired - Fee Related DE3889649T2 (de) 1987-12-25 1988-12-23 Ätzverfahren und -gerät.

Country Status (4)

Country Link
US (1) US4931135A (de)
EP (1) EP0323620B1 (de)
KR (1) KR970003885B1 (de)
DE (1) DE3889649T2 (de)

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* Cited by examiner, † Cited by third party
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US4931135A (en) 1990-06-05
EP0323620B1 (de) 1994-05-18
DE3889649T2 (de) 1994-09-29
KR890011046A (ko) 1989-08-12
KR970003885B1 (ko) 1997-03-22
EP0323620A2 (de) 1989-07-12

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