KR890011046A - 에칭방법 및 그 장치 - Google Patents

에칭방법 및 그 장치 Download PDF

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Publication number
KR890011046A
KR890011046A KR1019880016865A KR880016865A KR890011046A KR 890011046 A KR890011046 A KR 890011046A KR 1019880016865 A KR1019880016865 A KR 1019880016865A KR 880016865 A KR880016865 A KR 880016865A KR 890011046 A KR890011046 A KR 890011046A
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South Korea
Prior art keywords
electrodes
etching apparatus
electrode
processed
etching
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KR1019880016865A
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English (en)
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KR970003885B1 (ko
Inventor
타카오 호리우치
이즈미 아라이
요시후미 다하라
Original Assignee
고다가 토시오
도오교오 에레구토론 가부시끼 가이샤
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Publication date
Priority claimed from JP62333613A external-priority patent/JP2673526B2/ja
Priority claimed from JP63014197A external-priority patent/JPH01189126A/ja
Priority claimed from JP63014196A external-priority patent/JP2594448B2/ja
Priority claimed from JP63014195A external-priority patent/JPH07111965B2/ja
Priority claimed from JP2979288A external-priority patent/JPH0691042B2/ja
Priority claimed from JP63053280A external-priority patent/JPH01227438A/ja
Application filed by 고다가 토시오, 도오교오 에레구토론 가부시끼 가이샤 filed Critical 고다가 토시오
Publication of KR890011046A publication Critical patent/KR890011046A/ko
Application granted granted Critical
Publication of KR970003885B1 publication Critical patent/KR970003885B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

내용 없음

Description

에칭방법 및 그 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는, 본 발명의 제1실시예의 에칭장치의 구성을 나타낸 단면도.
제 2 도는, 제 1도의 에칭장치의 얹어 놓는 면의 곡면 상태를 나타낸 단면도.
제 3 도는, 제 2도의 곡면 상태를 Z방향와 얹어 놓는대의 중심에서의 거리와의 관계로 나타낸 특성도.

Claims (16)

  1. 진공용기(1) 내에 소정간격으로 대향하여 배치된 전극(4),(11)의 한 쪽에 얹어 놓여지는 피처리체를 이 전극(4),(11)의 표면에 밀어 누르는 수단에 의하여 밀어 누르고, 이들의 전극(4),(11) 사이에 전력을 인가하여, 처리가스를 플라즈마화하고, 이 플라즈마화한 가스에 의하여 상기 피처리체를 에칭하는 장치에 있어서, 상기 피처리체를 얹어 놓는 상기 전극(4),(11)의 얹어 놓는 면을, 이 피처리체가 동일 분포 하중에 의하여 변형된 곡면과 동일의 곡면으로 이루어지는 블록형상으로 한 것을 특징으로 하는 에칭장치.
  2. 제 1 항에 있어서, 밀어 누르는 수단으로, 밀어누르는 힘을 소망의 압력으로 자유롭게 가변하여 얻는 압력 조정수단(82)을 형성하고 에칭장치.
  3. 제 1 항에 있어서, 전극 주변의 도전성 부재를 절연 피복하고있는 에칭장치.
  4. 제 3 항에 있어서, 전극은 하부전극(11)인 에칭전극.
  5. 제 1 항에 있어서, 적어도 한쪽의 전극의 적어도 플라즈마화한 염소계 가스에 접촉하는 면을, 절연 저항이 900㏁ 이상의 절연층으로 형성하고 있는 에칭장치.
  6. 제 1 항에 있어서, 피처리체를 보호지지하는 전극(4),(11)의 피처리계 보호지지부터 임피이던스를 균일하게 설정하고 있는 에칭장치.
  7. 제 6 항에 있어서, 임피이던스를 균일하게 하는 수단이, 피처리체와 이 피처리체를 보호지지하는 전극(4),(11) 사이에 형성한 합성 고분자 필름(21)인 에칭장치.
  8. 제 7 항에 있어서, 합성 고분자 필름(21)이, 내열성 폴리이미드계 수지인 에칭장치.
  9. 제 7 항에 있어서, 합성 고분자 필름(21)은, 피처리체를 보호지지하는 전극 (4),(11)에 내열성 아크릴 수지계인 점착제로서 접착되어 있는 에칭장치.
  10. 제 1 항에 있어서, 대향하는 전극(4),(11)의 중심부에 있어서의 간격이 0.7Cm 이상 1.5Cm 이하인 에칭장치.
  11. 제 1 항에 있어서, 피처리체가, 반도체 기판(12)인 에칭장치.
  12. 진공용기(1) 내에, 피처리체가 동일 분포 하중을 받았을때에 변형하는 곡면과 동일의 곡면과 동일의 곡면으로 이루어지는 볼록형상의 얹어 놓는면을 갖는 전극(4),(11)을 형성하고, 이 얹어 놓는 면위에 상기 피처리체를 밀어누르는 수단으로 밀착하여 얹어 놓고, 상기 전극(4),(11)과 대향하여 소정의 간격으로 대향 전극을 배치한 후에, 상기 진공용기(1)에 소정의 처리가스를 도입하고, 이어서, 상기 전극(4),(11)과 상기 대향 전극사이에 소정의 전력을 인가하여 상기 처리가스를 플라즈마화하고, 그후에, 플라즈마화 한 이 처리가스에 의하여 상기 피처리체에 에칭 처리를 실시하는 것을 특징으로 에칭방법.
  13. 제12항에 있어서, 피처리체를 보호지지하는 전극(4),(11)의 피처리체 보호지지부의 임피이던스가 균일하게 설정되어 있는 에칭방법.
  14. 제12항에 있어서, 전극(4),(11)과 이것에 대향하는 대향전극의 각각의 중심부에 있어서의 대향간격이 0.7Cm 이상 1.5Cm이하인 에칭방법.
  15. 제12항에 있어서, 처리가스가, 아르곤, 프레온, 4염화탄소, 3염화분소중의 어느 것인가의 에칭방법.
  16. 제12항에 있어서, 피처리체가 반도체 기판(12)인 에칭방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880016865A 1987-12-25 1988-12-17 에칭 방법 및 그 장치 KR970003885B1 (ko)

Applications Claiming Priority (18)

Application Number Priority Date Filing Date Title
JP62-333613 1987-12-25
JP62333613A JP2673526B2 (ja) 1987-12-25 1987-12-25 エッチング装置
JP333613 1987-12-25
JP63014197A JPH01189126A (ja) 1988-01-25 1988-01-25 エッチング装置
JP63014196A JP2594448B2 (ja) 1988-01-25 1988-01-25 被処理体のエッチング方法
JP14196 1988-01-25
JP63014195A JPH07111965B2 (ja) 1988-01-25 1988-01-25 エッチング装置
JP14195 1988-01-25
JP62-14197 1988-01-25
JP14197 1988-01-25
JP62-14196 1988-01-25
JP62-14195 1988-01-25
JP62-29792 1988-02-09
JP29792 1988-02-09
JP2979288A JPH0691042B2 (ja) 1988-02-09 1988-02-09 エッチング装置
JP62-53280 1988-03-07
JP53280 1988-03-07
JP63053280A JPH01227438A (ja) 1988-03-07 1988-03-07 半導体基板用載置台

Publications (2)

Publication Number Publication Date
KR890011046A true KR890011046A (ko) 1989-08-12
KR970003885B1 KR970003885B1 (ko) 1997-03-22

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Country Status (4)

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US (1) US4931135A (ko)
EP (1) EP0323620B1 (ko)
KR (1) KR970003885B1 (ko)
DE (1) DE3889649T2 (ko)

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