DE3579453D1 - Monolithische integration von lichtemittierenden elementen und steuerelektronik. - Google Patents

Monolithische integration von lichtemittierenden elementen und steuerelektronik.

Info

Publication number
DE3579453D1
DE3579453D1 DE8585200627T DE3579453T DE3579453D1 DE 3579453 D1 DE3579453 D1 DE 3579453D1 DE 8585200627 T DE8585200627 T DE 8585200627T DE 3579453 T DE3579453 T DE 3579453T DE 3579453 D1 DE3579453 D1 DE 3579453D1
Authority
DE
Germany
Prior art keywords
light
emitting elements
control electronics
monolithic integration
monolithic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585200627T
Other languages
English (en)
Inventor
Marc Marie Deschler
Meino Heyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agfa Gevaert NV
Original Assignee
Agfa Gevaert NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agfa Gevaert NV filed Critical Agfa Gevaert NV
Application granted granted Critical
Publication of DE3579453D1 publication Critical patent/DE3579453D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
DE8585200627T 1985-04-23 1985-04-23 Monolithische integration von lichtemittierenden elementen und steuerelektronik. Expired - Fee Related DE3579453D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP85200627A EP0199852B1 (de) 1985-04-23 1985-04-23 Monolithische Integration von Lichtemittierenden Elementen und Steuerelektronik

Publications (1)

Publication Number Publication Date
DE3579453D1 true DE3579453D1 (de) 1990-10-04

Family

ID=8194013

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585200627T Expired - Fee Related DE3579453D1 (de) 1985-04-23 1985-04-23 Monolithische integration von lichtemittierenden elementen und steuerelektronik.

Country Status (4)

Country Link
US (1) US4777516A (de)
EP (1) EP0199852B1 (de)
JP (1) JP2524702B2 (de)
DE (1) DE3579453D1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0282653B1 (de) * 1987-03-18 1995-11-15 Agfa-Gevaert N.V. Monolithische Integration einer Matrix von lichtemittierenden Elementen und Steuerelektronik
EP0293185B1 (de) * 1987-05-26 1994-02-02 Kabushiki Kaisha Toshiba Halbleiterlaservorrichtung und Verfahren zu ihrer Herstellung
CA1301897C (en) * 1988-02-29 1992-05-26 Goro Sasaki Method for producing an opto-electronic integrated circuit
GB8829035D0 (en) * 1988-12-13 1989-07-05 Emi Plc Thorn Thermal imaging device
US4940672A (en) * 1989-03-17 1990-07-10 Kopin Corporation Method of making monolithic integrated III-V type laser devices and silicon devices on silicon
DE3931262A1 (de) * 1989-09-19 1991-03-28 Siemens Ag Monolithisch integrierte led-anordnung in zeilenform
KR920009898B1 (ko) * 1989-12-30 1992-11-05 재단법인 한국전자통신연구소 수신용 광전집적회로 및 그 제조방법
US4995049A (en) * 1990-05-29 1991-02-19 Eastman Kodak Company Optoelectronic integrated circuit
DE4303225C2 (de) * 1993-02-04 1996-08-14 Siemens Nixdorf Inf Syst Optischer Zeichengenerator für einen elektrografischen Drucker
US5610095A (en) * 1994-08-31 1997-03-11 Lucent Technologies Inc. Monolithically integrated circuits having dielectrically isolated, electrically controlled optical devices and process for fabricating the same
US5994727A (en) * 1997-09-30 1999-11-30 Samsung Electronics Co., Ltd. High performance gaas field effect transistor structure
JP4843251B2 (ja) * 2004-06-04 2011-12-21 シャープ株式会社 半導体レーザ素子、光ディスク装置および光伝送システム
KR101138946B1 (ko) * 2005-02-04 2012-04-25 서울옵토디바이스주식회사 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는방법
US20080121866A1 (en) * 2006-11-27 2008-05-29 Ping Yuan Avalanche photodiode detector
KR20080081837A (ko) * 2007-03-05 2008-09-10 서울반도체 주식회사 발광 장치
US8110835B2 (en) * 2007-04-19 2012-02-07 Luminus Devices, Inc. Switching device integrated with light emitting device
US8362703B2 (en) * 2007-12-20 2013-01-29 Luminus Devices, Inc. Light-emitting devices
DE102008049777A1 (de) * 2008-05-23 2009-11-26 Osram Opto Semiconductors Gmbh Optoelektronisches Modul
CN102076148A (zh) 2009-11-09 2011-05-25 东芝照明技术株式会社 Led点灯装置以及照明装置
TWI484626B (zh) * 2012-02-21 2015-05-11 Formosa Epitaxy Inc 半導體發光元件及具有此半導體發光元件的發光裝置
CN103107179B (zh) * 2012-02-21 2017-04-26 晶元光电股份有限公司 一种发光组件及具有此发光组件的发光装置
JP5990957B2 (ja) * 2012-03-21 2016-09-14 カシオ計算機株式会社 発光素子、光源装置及び投影装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55117295A (en) * 1979-03-02 1980-09-09 Hitachi Ltd Semiconductor light emitting element and fabricating the same
JPS5779684A (en) * 1980-11-05 1982-05-18 Ricoh Co Ltd Light emitting diode device
DE3276289D1 (en) * 1982-02-19 1987-06-11 Agfa Gevaert Nv Recording apparatus
JPS5951586A (ja) * 1982-09-17 1984-03-26 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS5954271A (ja) * 1982-09-21 1984-03-29 Agency Of Ind Science & Technol 半導体集積回路装置
JPS59100577A (ja) * 1982-11-30 1984-06-09 Fujitsu Ltd 半導体装置
JPS59219139A (ja) * 1983-05-27 1984-12-10 Toyoda Mach Works Ltd センタレス研削盤における心高制御装置
US4608696A (en) * 1983-06-08 1986-08-26 Trw Inc. Integrated laser and field effect transistor
JPS601846A (ja) * 1983-06-18 1985-01-08 Toshiba Corp 多層配線構造の半導体装置とその製造方法
JPS60253283A (ja) * 1984-05-29 1985-12-13 Toshiba Corp 半導体発光素子

Also Published As

Publication number Publication date
EP0199852A1 (de) 1986-11-05
EP0199852B1 (de) 1990-08-29
US4777516A (en) 1988-10-11
JP2524702B2 (ja) 1996-08-14
JPS61276259A (ja) 1986-12-06

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Legal Events

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8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee