DE68918306D1 - Verfahren zum Herstellen einer integrierten optoelektronischen Schaltung. - Google Patents
Verfahren zum Herstellen einer integrierten optoelektronischen Schaltung.Info
- Publication number
- DE68918306D1 DE68918306D1 DE68918306T DE68918306T DE68918306D1 DE 68918306 D1 DE68918306 D1 DE 68918306D1 DE 68918306 T DE68918306 T DE 68918306T DE 68918306 T DE68918306 T DE 68918306T DE 68918306 D1 DE68918306 D1 DE 68918306D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- optoelectronic circuit
- integrated optoelectronic
- integrated
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000005693 optoelectronics Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/119—Phosphides of gallium or indium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/12—Photocathodes-Cs coated and solar cell
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Junction Field-Effect Transistors (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63046901A JPH0644614B2 (ja) | 1988-02-29 | 1988-02-29 | 光電子集積回路の製造方法 |
JP63046902A JPH0644615B2 (ja) | 1988-02-29 | 1988-02-29 | 光電子集積回路の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68918306D1 true DE68918306D1 (de) | 1994-10-27 |
DE68918306T2 DE68918306T2 (de) | 1995-05-18 |
Family
ID=26387051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68918306T Expired - Fee Related DE68918306T2 (de) | 1988-02-29 | 1989-02-28 | Verfahren zum Herstellen einer integrierten optoelektronischen Schaltung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4996163A (de) |
EP (1) | EP0331103B1 (de) |
KR (1) | KR920003445B1 (de) |
CA (1) | CA1301897C (de) |
DE (1) | DE68918306T2 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0392480B1 (de) * | 1989-04-12 | 1997-03-12 | Sumitomo Electric Industries, Ltd. | Herstellungsverfahren einer integrierten Halbleiterschaltung |
JPH03236276A (ja) * | 1990-02-14 | 1991-10-22 | Ricoh Co Ltd | 光機能素子 |
US5187110A (en) * | 1990-10-05 | 1993-02-16 | Allied-Signal Inc. | Field effect transistor-bipolar transistor darlington pair |
JPH04184973A (ja) * | 1990-11-19 | 1992-07-01 | Mitsubishi Electric Corp | 長波長光送信oeic |
JP3086748B2 (ja) * | 1991-07-26 | 2000-09-11 | 株式会社東芝 | 高電子移動度トランジスタ |
KR970003902B1 (ko) * | 1992-03-17 | 1997-03-22 | 가부시키가이샤 도시바 | 화합물반도체 집적회로 및 그 제조방법 |
JPH06163829A (ja) * | 1992-07-31 | 1994-06-10 | Texas Instr Inc <Ti> | 集積回路とその製法 |
DE69502770T2 (de) * | 1994-05-12 | 1999-02-04 | Hitachi Europ Ltd | Integrierte optoelektronische Schaltung |
US5589404A (en) * | 1994-08-01 | 1996-12-31 | Lucent Technologies Inc. | Monolithically integrated VLSI optoelectronic circuits and a method of fabricating the same |
DE69522075T2 (de) | 1994-11-02 | 2002-01-03 | Trw Inc | Verfahren zum Herstellen von multifunktionellen, monolithisch-integrierten Schaltungsanordnungen |
US5535231A (en) * | 1994-11-08 | 1996-07-09 | Samsung Electronics Co., Ltd. | Optoelectronic circuit including heterojunction bipolar transistor laser and photodetector |
US5848088A (en) * | 1995-07-11 | 1998-12-08 | Seiko Epson Corporation | Surface emission type semiconductor for laser with optical detector, method of manufacturing thereof, and sensor using the same |
US5621227A (en) * | 1995-07-18 | 1997-04-15 | Discovery Semiconductors, Inc. | Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy |
US6037602A (en) * | 1998-02-13 | 2000-03-14 | C.P. Clare Corporation | Photovoltaic generator circuit and method of making same |
US6228673B1 (en) * | 1999-05-13 | 2001-05-08 | Hughes Electronics Corporation | Method of fabricating a surface coupled InGaAs photodetector |
JP2002033507A (ja) * | 2000-07-18 | 2002-01-31 | Nippon Sheet Glass Co Ltd | 受光素子および光分波器 |
US6580139B1 (en) | 2000-07-20 | 2003-06-17 | Emcore Corporation | Monolithically integrated sensing device and method of manufacture |
JP2005129696A (ja) * | 2003-10-23 | 2005-05-19 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
CN111969001A (zh) * | 2019-05-20 | 2020-11-20 | 刁鸿浩 | GaN基的单件集成的无机LED显示器 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4352116A (en) * | 1978-07-21 | 1982-09-28 | California Institute Of Technology | Solid state electro-optical devices on a semi-insulating substrate |
JPS5670681A (en) * | 1979-11-14 | 1981-06-12 | Hitachi Ltd | Semiconductor luminous element |
JPS5844769A (ja) * | 1981-09-10 | 1983-03-15 | Fujitsu Ltd | 半導体装置 |
JPS5951585A (ja) * | 1982-09-17 | 1984-03-26 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
US4608696A (en) * | 1983-06-08 | 1986-08-26 | Trw Inc. | Integrated laser and field effect transistor |
GB2145279B (en) * | 1983-08-18 | 1987-10-21 | Standard Telephones Cables Ltd | Photodetector integrated circuit |
JPS60193393A (ja) * | 1984-03-15 | 1985-10-01 | Matsushita Electric Ind Co Ltd | 光集積回路装置 |
US4719498A (en) * | 1984-05-18 | 1988-01-12 | Fujitsu Limited | Optoelectronic integrated circuit |
US4551394A (en) * | 1984-11-26 | 1985-11-05 | Honeywell Inc. | Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs |
GB2168528B (en) * | 1984-12-15 | 1988-07-13 | Stc Plc | Photo detector integrated circuit |
DE3579453D1 (de) * | 1985-04-23 | 1990-10-04 | Agfa Gevaert Nv | Monolithische integration von lichtemittierenden elementen und steuerelektronik. |
JPS61270883A (ja) * | 1985-05-25 | 1986-12-01 | Fujitsu Ltd | 光半導体装置 |
FR2595007B1 (fr) * | 1986-02-25 | 1988-05-13 | Thomson Csf | Tete de detection optique realisee en optique integree et procede de realisation |
JPS6356955A (ja) * | 1986-08-27 | 1988-03-11 | Fujitsu Ltd | 光・電子集積回路装置 |
CA1274900A (en) * | 1987-01-05 | 1990-10-02 | Nec Corporation | Field-effect transistor and the same associated with an optical semiconductor device |
-
1989
- 1989-02-22 CA CA000591787A patent/CA1301897C/en not_active Expired - Fee Related
- 1989-02-22 US US07/313,507 patent/US4996163A/en not_active Expired - Lifetime
- 1989-02-28 DE DE68918306T patent/DE68918306T2/de not_active Expired - Fee Related
- 1989-02-28 KR KR1019890002426A patent/KR920003445B1/ko not_active IP Right Cessation
- 1989-02-28 EP EP89103486A patent/EP0331103B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE68918306T2 (de) | 1995-05-18 |
KR920003445B1 (ko) | 1992-05-01 |
CA1301897C (en) | 1992-05-26 |
EP0331103A2 (de) | 1989-09-06 |
EP0331103B1 (de) | 1994-09-21 |
US4996163A (en) | 1991-02-26 |
KR890013782A (ko) | 1989-09-26 |
EP0331103A3 (en) | 1990-12-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: FIENER, J., PAT.-ANW., 87719 MINDELHEIM |
|
8339 | Ceased/non-payment of the annual fee |