DE3485924D1 - Verfahren zur herstellung einer halbleiterlaservorrichtung. - Google Patents

Verfahren zur herstellung einer halbleiterlaservorrichtung.

Info

Publication number
DE3485924D1
DE3485924D1 DE8484113950T DE3485924T DE3485924D1 DE 3485924 D1 DE3485924 D1 DE 3485924D1 DE 8484113950 T DE8484113950 T DE 8484113950T DE 3485924 T DE3485924 T DE 3485924T DE 3485924 D1 DE3485924 D1 DE 3485924D1
Authority
DE
Germany
Prior art keywords
producing
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484113950T
Other languages
English (en)
Other versions
DE3485924T2 (de
Inventor
Toshiro Hayakawa
Takahiro Suyama
Saburo Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3485924D1 publication Critical patent/DE3485924D1/de
Publication of DE3485924T2 publication Critical patent/DE3485924T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8484113950T 1983-11-18 1984-11-17 Verfahren zur herstellung einer halbleiterlaservorrichtung. Expired - Lifetime DE3485924T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58218276A JPS60110188A (ja) 1983-11-18 1983-11-18 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
DE3485924D1 true DE3485924D1 (de) 1992-10-22
DE3485924T2 DE3485924T2 (de) 1993-04-01

Family

ID=16717324

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484113950T Expired - Lifetime DE3485924T2 (de) 1983-11-18 1984-11-17 Verfahren zur herstellung einer halbleiterlaservorrichtung.

Country Status (4)

Country Link
US (1) US4567060A (de)
EP (1) EP0142845B1 (de)
JP (1) JPS60110188A (de)
DE (1) DE3485924T2 (de)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60192380A (ja) * 1984-03-13 1985-09-30 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS6224679A (ja) * 1984-12-21 1987-02-02 Rohm Co Ltd 半導体レ−ザおよびその製造方法
US4647320A (en) * 1985-05-22 1987-03-03 Trw Inc. Method of making a surface emitting light emitting diode
DE3682959D1 (de) * 1985-06-21 1992-01-30 Matsushita Electric Ind Co Ltd Bipolarer transistor mit heterouebergang und verfahren zu seiner herstellung.
JPS6249656A (ja) * 1985-08-29 1987-03-04 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタおよびその製造方法
JPS6249662A (ja) * 1985-08-29 1987-03-04 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタおよびその製造方法
JPS6247158A (ja) * 1985-08-26 1987-02-28 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタおよびその製造方法
JPS6249660A (ja) * 1985-08-29 1987-03-04 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタおよびその製造方法
JPS6249659A (ja) * 1985-08-29 1987-03-04 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタおよびその製造方法
JPS6249661A (ja) * 1985-08-29 1987-03-04 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタおよびその製造方法
JPS6249658A (ja) * 1985-08-29 1987-03-04 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタおよびその製造方法
JPS6249657A (ja) * 1985-08-29 1987-03-04 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタおよびその製造方法
US4783425A (en) * 1985-11-06 1988-11-08 Hitachi, Ltd. Fabrication process of semiconductor lasers
JPS62141796A (ja) * 1985-12-17 1987-06-25 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPS62202584A (ja) * 1986-02-28 1987-09-07 Mitsubishi Electric Corp 半導体レ−ザ装置の製造方法
US4839307A (en) * 1986-05-14 1989-06-13 Omron Tateisi Electronics Co. Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement
US4788159A (en) * 1986-09-18 1988-11-29 Eastman Kodak Company Process for forming a positive index waveguide
JPS63140591A (ja) * 1986-12-02 1988-06-13 Mitsubishi Electric Corp 半導体レ−ザ装置の製造方法
JPS63166285A (ja) * 1986-12-26 1988-07-09 Toshiba Corp 半導体発光装置の製造方法
JPS63198320A (ja) * 1987-02-13 1988-08-17 Mitsubishi Electric Corp 結晶成長方法
JP2569036B2 (ja) * 1987-02-18 1997-01-08 株式会社日立製作所 半導体レ−ザ装置
DE3884881T2 (de) * 1987-08-04 1994-02-10 Sharp Kk Halbleiterlaservorrichtung.
JP2558744B2 (ja) * 1987-10-08 1996-11-27 シャープ株式会社 半導体レーザ素子及びその製造方法
CA2008379C (en) * 1989-01-24 1993-08-31 Hajime Sakiyama Semiconductor lasers
US5058120A (en) * 1990-02-28 1991-10-15 Kabushiki Kaisha Toshiba Visible light emitting semiconductor laser with inverse mesa-shaped groove section
JP2547464B2 (ja) * 1990-04-13 1996-10-23 シャープ株式会社 半導体レーザ素子の製造方法
JPH0461292A (ja) * 1990-06-28 1992-02-27 Mitsubishi Electric Corp 半導体レーザ
JPH04116993A (ja) * 1990-09-07 1992-04-17 Matsushita Electric Ind Co Ltd 半導体レーザ及びその製造方法
JPH0513881A (ja) * 1990-11-28 1993-01-22 Matsushita Electric Ind Co Ltd 半導体レーザの製造方法
US5386429A (en) * 1992-03-31 1995-01-31 Matsushita Electric Industrial Co., Ltd. Low operating current and low noise semiconductor laser device for optical disk memories
KR970001896B1 (ko) * 1992-05-27 1997-02-18 엘지전자 주식회사 반도체 레이저 다이오드의 구조 및 그 제조방법
JPH0669585A (ja) * 1992-08-12 1994-03-11 Fujitsu Ltd 面発光半導体レーザ及びその製造方法
JPH0750445A (ja) * 1993-06-02 1995-02-21 Rohm Co Ltd 半導体レーザの製法
JPH07183618A (ja) * 1993-12-22 1995-07-21 Ricoh Co Ltd 半導体レーザ装置、半導体レーザ装置製造方法並びに集積型半導体レーザ装置
US5751752A (en) * 1994-09-14 1998-05-12 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US5974069A (en) 1994-09-16 1999-10-26 Rohm Co., Ltd Semiconductor laser and manufacturing method thereof
JPH0888439A (ja) * 1994-09-16 1996-04-02 Rohm Co Ltd 半導体レーザおよびその製法
JP3432910B2 (ja) * 1994-09-28 2003-08-04 ローム株式会社 半導体レーザ
JPH08222815A (ja) * 1994-12-13 1996-08-30 Mitsubishi Electric Corp 半導体レーザ装置の製造方法、及び半導体レーザ装置
JP2939167B2 (ja) * 1995-10-24 1999-08-25 シャープ株式会社 半導体レーザ素子
JPH08264906A (ja) * 1996-01-22 1996-10-11 Rohm Co Ltd 半導体レーザおよびその製造方法
JP3434706B2 (ja) 1998-05-21 2003-08-11 富士写真フイルム株式会社 半導体レーザおよびその製造方法
JP4462657B2 (ja) * 1998-06-04 2010-05-12 ソニー株式会社 半導体発光素子およびその製造方法
US6400743B1 (en) * 1999-08-05 2002-06-04 Fuji Photo Film Co., Ltd. High-power semiconductor laser device having current confinement structure and index-guided structure
JP4804623B2 (ja) * 1999-12-10 2011-11-02 古河電気工業株式会社 半導体レーザ素子
US7817691B2 (en) 2006-05-19 2010-10-19 Nec Corporation Light emitting device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147985A (en) * 1975-06-13 1976-12-18 Fujitsu Ltd Method of manufacturing a semiconductor light emission device
JPS609356B2 (ja) * 1975-08-28 1985-03-09 富士通株式会社 半導体発光装置の製法
US4269635A (en) * 1977-12-28 1981-05-26 Bell Telephone Laboratories, Incorporated Strip buried heterostructure laser
US4355396A (en) * 1979-11-23 1982-10-19 Rca Corporation Semiconductor laser diode and method of making the same
US4371968A (en) * 1981-07-01 1983-02-01 The United States Of America As Represented By The Secretary Of The Army Monolithic injection laser arrays formed by crystal regrowth techniques
GB2105099B (en) * 1981-07-02 1985-06-12 Standard Telephones Cables Ltd Injection laser

Also Published As

Publication number Publication date
EP0142845A2 (de) 1985-05-29
US4567060A (en) 1986-01-28
EP0142845A3 (en) 1987-05-27
DE3485924T2 (de) 1993-04-01
JPS60110188A (ja) 1985-06-15
EP0142845B1 (de) 1992-09-16
JPH0118590B2 (de) 1989-04-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition