DE3485089D1 - Verfahren zur herstellung von halbleitervorrichtungen. - Google Patents

Verfahren zur herstellung von halbleitervorrichtungen.

Info

Publication number
DE3485089D1
DE3485089D1 DE8484902820T DE3485089T DE3485089D1 DE 3485089 D1 DE3485089 D1 DE 3485089D1 DE 8484902820 T DE8484902820 T DE 8484902820T DE 3485089 T DE3485089 T DE 3485089T DE 3485089 D1 DE3485089 D1 DE 3485089D1
Authority
DE
Germany
Prior art keywords
semiconductor devices
producing semiconductor
producing
devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484902820T
Other languages
English (en)
Inventor
Akio Kayanuma
Minoru Nakamura
Katsuaki Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE3485089D1 publication Critical patent/DE3485089D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3215—Doping the layers
    • H01L21/32155—Doping polycristalline - or amorphous silicon layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/924—To facilitate selective etching
DE8484902820T 1983-07-19 1984-07-19 Verfahren zur herstellung von halbleitervorrichtungen. Expired - Lifetime DE3485089D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58132349A JPS6024059A (ja) 1983-07-19 1983-07-19 半導体装置の製造方法
PCT/JP1984/000367 WO1985000695A1 (en) 1983-07-19 1984-07-19 Method of manufacturing semiconductor devices

Publications (1)

Publication Number Publication Date
DE3485089D1 true DE3485089D1 (de) 1991-10-24

Family

ID=15079271

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484902820T Expired - Lifetime DE3485089D1 (de) 1983-07-19 1984-07-19 Verfahren zur herstellung von halbleitervorrichtungen.

Country Status (6)

Country Link
US (1) US4584055A (de)
EP (1) EP0149683B1 (de)
JP (1) JPS6024059A (de)
KR (1) KR930000229B1 (de)
DE (1) DE3485089D1 (de)
WO (1) WO1985000695A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR890004973B1 (ko) * 1985-04-10 1989-12-02 후지쓰 가부시기 가이샤 자기정합된 바이폴라트랜지스터의 제조방법
EP0265489B1 (de) * 1986-04-23 1991-01-16 AT&T Corp. Verfahren zur herstellung von halbleiterbauelementen
DE3615519A1 (de) * 1986-05-07 1987-11-12 Siemens Ag Verfahren zum erzeugen von kontaktloechern mit abgeschraegten flanken in zwischenoxidschichten
GB2214870B (en) * 1988-02-20 1991-09-11 Stc Plc Plasma etching process
US4818334A (en) * 1988-03-15 1989-04-04 General Electric Company Method of etching a layer including polysilicon
US4968634A (en) * 1988-05-20 1990-11-06 Siemens Aktiengesellschaft Fabrication process for photodiodes responsive to blue light
US4978418A (en) * 1988-08-18 1990-12-18 The United States Of America As Represented By The United States Department Of Energy Controlled ion implant damage profile for etching
US5092957A (en) * 1989-11-24 1992-03-03 The United States Of America As Represented By The United States Department Of Energy Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching
NL9100062A (nl) * 1991-01-14 1992-08-03 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
KR920017269A (ko) * 1991-02-21 1992-09-26 김광호 다결정실리콘 재충전(refill)법을 이용한 Laterally Graded Emitter(LGE)구조의 바이폴라 트랜지스터 제조방법
KR950019922A (ko) * 1993-12-28 1995-07-24 김주용 다결정실리콘 습식식각용액
US6171966B1 (en) * 1996-08-15 2001-01-09 Applied Materials, Inc. Delineation pattern for epitaxial depositions
US6121158A (en) * 1997-08-13 2000-09-19 Sony Corporation Method for hardening a photoresist material formed on a substrate
US6100162A (en) 1999-05-14 2000-08-08 Micron Technology, Inc. Method of forming a circuitry isolation region within a semiconductive wafer
JP2002009040A (ja) * 2000-06-22 2002-01-11 Mitsubishi Electric Corp 半導体装置の製造方法および半導体装置
EP1378947A1 (de) * 2002-07-01 2004-01-07 Interuniversitair Microelektronica Centrum Vzw Ätzpaste für Halbleiter und Verwendung einer Ätzpaste zum lokalisierten Ätzen von Halbleitersubstraten
KR20130106151A (ko) * 2012-03-19 2013-09-27 에스케이하이닉스 주식회사 고종횡비 캐패시터 제조 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3738880A (en) * 1971-06-23 1973-06-12 Rca Corp Method of making a semiconductor device
JPS5546066B2 (de) * 1973-05-24 1980-11-21
JPS5010973A (de) * 1973-05-28 1975-02-04
JPS5459084A (en) * 1977-10-19 1979-05-12 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
JPS5727057A (en) * 1980-07-25 1982-02-13 Nec Corp Semiconductor device
JPS57122571A (en) * 1981-01-22 1982-07-30 Toshiba Corp Manufacture of semiconductor device
US4433470A (en) * 1981-05-19 1984-02-28 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing semiconductor device utilizing selective etching and diffusion
FR2508704B1 (fr) * 1981-06-26 1985-06-07 Thomson Csf Procede de fabrication de transistors bipolaires integres de tres petites dimensions
US4522682A (en) * 1982-06-21 1985-06-11 Rockwell International Corporation Method for producing PNP type lateral transistor separated from substrate by O.D.E. for minimal interference therefrom

Also Published As

Publication number Publication date
KR850000789A (ko) 1985-03-09
EP0149683A1 (de) 1985-07-31
KR930000229B1 (ko) 1993-01-14
US4584055A (en) 1986-04-22
EP0149683B1 (de) 1991-09-18
WO1985000695A1 (en) 1985-02-14
JPS6024059A (ja) 1985-02-06
EP0149683A4 (de) 1988-04-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee