DE3486006D1 - Verfahren zur herstellung von halbleiterlasern. - Google Patents

Verfahren zur herstellung von halbleiterlasern.

Info

Publication number
DE3486006D1
DE3486006D1 DE8484305876T DE3486006T DE3486006D1 DE 3486006 D1 DE3486006 D1 DE 3486006D1 DE 8484305876 T DE8484305876 T DE 8484305876T DE 3486006 T DE3486006 T DE 3486006T DE 3486006 D1 DE3486006 D1 DE 3486006D1
Authority
DE
Germany
Prior art keywords
semiconductor lasers
producing semiconductor
producing
lasers
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8484305876T
Other languages
English (en)
Other versions
DE3486006T2 (de
Inventor
Toshiro Hayakawa
Nobuyuki Miyauchi
Seiki Yano
Takahiro Suyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE3486006D1 publication Critical patent/DE3486006D1/de
Application granted granted Critical
Publication of DE3486006T2 publication Critical patent/DE3486006T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nanotechnology (AREA)
  • Geometry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE8484305876T 1983-08-30 1984-08-29 Verfahren zur herstellung von halbleiterlasern. Expired - Fee Related DE3486006T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58160681A JPS6050983A (ja) 1983-08-30 1983-08-30 半導体レ−ザ素子の製造方法

Publications (2)

Publication Number Publication Date
DE3486006D1 true DE3486006D1 (de) 1993-01-28
DE3486006T2 DE3486006T2 (de) 1993-04-15

Family

ID=15720162

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484305876T Expired - Fee Related DE3486006T2 (de) 1983-08-30 1984-08-29 Verfahren zur herstellung von halbleiterlasern.

Country Status (4)

Country Link
US (1) US4569721A (de)
EP (1) EP0136097B1 (de)
JP (1) JPS6050983A (de)
DE (1) DE3486006T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8301331A (nl) * 1983-04-15 1984-11-01 Philips Nv Halfgeleiderinrichting voor het opwekken of versterken van electromagnetische straling en werkwijze ter vervaardiging daarvan.
DE3579929D1 (de) * 1984-03-27 1990-11-08 Matsushita Electric Ind Co Ltd Halbleiterlaser und verfahren zu dessen fabrikation.
US4783425A (en) * 1985-11-06 1988-11-08 Hitachi, Ltd. Fabrication process of semiconductor lasers
JPS62118055A (ja) * 1985-11-16 1987-05-29 Mitsubishi Heavy Ind Ltd 可変噴口燃料噴射弁
US4804639A (en) * 1986-04-18 1989-02-14 Bell Communications Research, Inc. Method of making a DH laser with strained layers by MBE
US4788159A (en) * 1986-09-18 1988-11-29 Eastman Kodak Company Process for forming a positive index waveguide
JPS63198320A (ja) * 1987-02-13 1988-08-17 Mitsubishi Electric Corp 結晶成長方法
JPS63284878A (ja) * 1987-04-30 1988-11-22 シーメンス、アクチエンゲゼルシヤフト 埋込み活性層をもつレーザダイオードの製造方法
JPS63299186A (ja) * 1987-05-29 1988-12-06 Hitachi Ltd 発光素子
DE3732822A1 (de) * 1987-09-29 1989-04-06 Siemens Ag Laserdiode mit indexfuehrung, insbesondere laserdioden-array mit wellenleiterstruktur
JP2655415B2 (ja) * 1988-04-14 1997-09-17 石川島播磨重工業株式会社 燃料噴射装置
US5202285A (en) * 1990-04-26 1993-04-13 Fujitsu Limited Semiconductor laser having double heterostructure and method of producing same
US5255281A (en) * 1990-04-26 1993-10-19 Fujitsu Limited Semiconductor laser having double heterostructure
EP0454476A3 (en) * 1990-04-26 1992-04-01 Fujitsu Limited Semiconductor laser having double heterostructure and method of producing the same
JP2737477B2 (ja) * 1991-09-27 1998-04-08 日本電気株式会社 半導体レーザの製造方法
JP3242967B2 (ja) * 1992-01-31 2001-12-25 株式会社東芝 半導体発光素子
JPH065976A (ja) * 1992-06-24 1994-01-14 Fujitsu Ltd 半導体レーザ装置の製造方法
US5384151A (en) * 1993-08-11 1995-01-24 Northwestern University InGaAsP/GaAs diode laser
JP2956869B2 (ja) * 1993-08-30 1999-10-04 富士通株式会社 半導体レーザおよびその製造方法
JP2822868B2 (ja) * 1993-12-10 1998-11-11 日本電気株式会社 半導体レーザの製造方法
US20230216278A1 (en) * 2022-01-05 2023-07-06 Modulight Oy Method for fabricating semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4149175A (en) * 1975-06-20 1979-04-10 Matsushita Electric Industrial Co., Ltd. Solidstate light-emitting device
US4425650A (en) * 1980-04-15 1984-01-10 Nippon Electric Co., Ltd. Buried heterostructure laser diode
JPS5762586A (en) * 1980-10-02 1982-04-15 Nec Corp Semiconductor laser
US4347611A (en) * 1980-11-06 1982-08-31 Xerox Corporation Large optical cavity (LOC) mesa laser
DE3105786A1 (de) * 1981-02-17 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Herstellung von lumineszenz- oder laserdioden mit intern begrenzter leuchtflaeche
JPS5864085A (ja) * 1981-10-13 1983-04-16 Nec Corp 半導体レ−ザおよびその製造方法

Also Published As

Publication number Publication date
EP0136097A2 (de) 1985-04-03
DE3486006T2 (de) 1993-04-15
JPS6050983A (ja) 1985-03-22
US4569721A (en) 1986-02-11
EP0136097A3 (en) 1987-04-29
EP0136097B1 (de) 1992-12-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee