KR910010721A - 반도체 기억장치 및 그 제조방법 - Google Patents

반도체 기억장치 및 그 제조방법

Info

Publication number
KR910010721A
KR910010721A KR1019900019456A KR900019456A KR910010721A KR 910010721 A KR910010721 A KR 910010721A KR 1019900019456 A KR1019900019456 A KR 1019900019456A KR 900019456 A KR900019456 A KR 900019456A KR 910010721 A KR910010721 A KR 910010721A
Authority
KR
South Korea
Prior art keywords
manufacturing
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
KR1019900019456A
Other languages
English (en)
Other versions
KR970011054B1 (ko
Inventor
가츠히코 히에다
Original Assignee
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바
Publication of KR910010721A publication Critical patent/KR910010721A/ko
Application granted granted Critical
Publication of KR970011054B1 publication Critical patent/KR970011054B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
KR1019900019456A 1989-11-29 1990-11-29 반도체 기억장치 및 그 제조방법 KR970011054B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP01-309697 1989-11-29
JP1309697A JPH03171663A (ja) 1989-11-29 1989-11-29 半導体記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
KR910010721A true KR910010721A (ko) 1991-06-29
KR970011054B1 KR970011054B1 (ko) 1997-07-05

Family

ID=17996196

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900019456A KR970011054B1 (ko) 1989-11-29 1990-11-29 반도체 기억장치 및 그 제조방법

Country Status (4)

Country Link
US (1) US5119155A (ko)
JP (1) JPH03171663A (ko)
KR (1) KR970011054B1 (ko)
DE (1) DE4038114C2 (ko)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05175452A (ja) * 1991-12-25 1993-07-13 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
US5468979A (en) * 1992-04-30 1995-11-21 Nippon Steel Corporation Semiconductor device having trench type capacitors formed completely within an insulating layer
JP3439493B2 (ja) * 1992-12-01 2003-08-25 沖電気工業株式会社 半導体記憶装置の製造方法
EP0606758B1 (en) * 1992-12-30 2000-09-06 Samsung Electronics Co., Ltd. Method of producing an SOI transistor DRAM
US5384953A (en) * 1993-07-21 1995-01-31 International Business Machines Corporation Structure and a method for repairing electrical lines
US5442584A (en) * 1993-09-14 1995-08-15 Goldstar Electron Co., Ltd. Semiconductor memory device and method for fabricating the same dynamic random access memory device construction
US5831312A (en) * 1996-04-09 1998-11-03 United Microelectronics Corporation Electrostic discharge protection device comprising a plurality of trenches
US5770875A (en) * 1996-09-16 1998-06-23 International Business Machines Corporation Large value capacitor for SOI
US5914510A (en) * 1996-12-13 1999-06-22 Kabushiki Kaisha Toshiba Semiconductor memory device and method of manufacturing the same
US5998821A (en) * 1997-05-21 1999-12-07 Kabushiki Kaisha Toshiba Dynamic ram structure having a trench capacitor
DE19813169A1 (de) * 1998-03-25 1999-10-07 Siemens Ag Halbleiterspeicher mit streifenförmiger Zellplatte
JP2000068479A (ja) * 1998-08-26 2000-03-03 Hitachi Ltd 半導体集積回路装置
US6544837B1 (en) * 2000-03-17 2003-04-08 International Business Machines Corporation SOI stacked DRAM logic
JP3736740B2 (ja) * 2000-12-12 2006-01-18 シャープ株式会社 絶縁膜容量評価装置および絶縁膜容量評価方法
JP4499967B2 (ja) * 2001-09-18 2010-07-14 セイコーインスツル株式会社 半導体集積回路の製造方法
US6730540B2 (en) * 2002-04-18 2004-05-04 Tru-Si Technologies, Inc. Clock distribution networks and conductive lines in semiconductor integrated circuits
KR100584997B1 (ko) * 2003-07-18 2006-05-29 매그나칩 반도체 유한회사 트렌치 구조의 캐패시터를 구비한 아날로그 반도체 소자및 그제조 방법
JP4456027B2 (ja) * 2005-03-25 2010-04-28 Ｏｋｉセミコンダクタ株式会社 貫通導電体の製造方法
KR102142937B1 (ko) * 2013-09-25 2020-08-10 인텔 코포레이션 매립 수직 커패시터들을 형성하는 방법들 및 그에 의해 형성되는 구조들
US10199372B2 (en) * 2017-06-23 2019-02-05 Infineon Technologies Ag Monolithically integrated chip including active electrical components and passive electrical components with chip edge stabilization structures

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4593453A (en) * 1982-06-01 1986-06-10 Rockwell International Corporation Two-level transistor structures and method utilizing minimal area therefor
JPH0666436B2 (ja) * 1983-04-15 1994-08-24 株式会社日立製作所 半導体集積回路装置
JPS61207055A (ja) * 1985-03-11 1986-09-13 Nec Corp 半導体記憶装置
JPS61280651A (ja) * 1985-05-24 1986-12-11 Fujitsu Ltd 半導体記憶装置
US4777147A (en) * 1987-01-28 1988-10-11 Texas Instruments Incorporated Forming a split-level CMOS device
JPH0665559A (ja) * 1992-08-20 1994-03-08 Kao Corp 帯電防止材料
JPH06235668A (ja) * 1993-02-12 1994-08-23 Mazda Motor Corp トルク検出装置および回転速度検出装置

Also Published As

Publication number Publication date
DE4038114A1 (de) 1991-06-13
US5119155A (en) 1992-06-02
JPH03171663A (ja) 1991-07-25
DE4038114C2 (de) 1999-03-18
KR970011054B1 (ko) 1997-07-05

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