DE3850828D1 - Inverter mit bipolarem Transistor und komplementären MOS-Transistoren. - Google Patents

Inverter mit bipolarem Transistor und komplementären MOS-Transistoren.

Info

Publication number
DE3850828D1
DE3850828D1 DE3850828T DE3850828T DE3850828D1 DE 3850828 D1 DE3850828 D1 DE 3850828D1 DE 3850828 T DE3850828 T DE 3850828T DE 3850828 T DE3850828 T DE 3850828T DE 3850828 D1 DE3850828 D1 DE 3850828D1
Authority
DE
Germany
Prior art keywords
inverter
bipolar transistor
mos transistors
complementary mos
complementary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3850828T
Other languages
English (en)
Inventor
Atsuo Koshizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3850828D1 publication Critical patent/DE3850828D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0826—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
DE3850828T 1987-09-11 1988-09-09 Inverter mit bipolarem Transistor und komplementären MOS-Transistoren. Expired - Lifetime DE3850828D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62228733A JPS6471325A (en) 1987-09-11 1987-09-11 Bipolar cmos inverter

Publications (1)

Publication Number Publication Date
DE3850828D1 true DE3850828D1 (de) 1994-09-01

Family

ID=16880960

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3850828T Expired - Lifetime DE3850828D1 (de) 1987-09-11 1988-09-09 Inverter mit bipolarem Transistor und komplementären MOS-Transistoren.

Country Status (5)

Country Link
US (1) US4882534A (de)
EP (1) EP0307323B1 (de)
JP (1) JPS6471325A (de)
KR (1) KR910006513B1 (de)
DE (1) DE3850828D1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2783579B2 (ja) * 1989-03-01 1998-08-06 株式会社東芝 半導体装置
JPH02291165A (ja) * 1989-04-29 1990-11-30 Nec Corp バイ・ｃｍｏｓ半導体装置
US4952823A (en) * 1989-05-03 1990-08-28 Advanced Micro Devices, Inc. Bicmos decoder
US5155387A (en) * 1989-12-28 1992-10-13 North American Philips Corp. Circuit suitable for differential multiplexers and logic gates utilizing bipolar and field-effect transistors
JP2953005B2 (ja) * 1990-09-14 1999-09-27 日本電気株式会社 Ｂｉ―ＣＭＯＳ回路
US5103160A (en) * 1991-04-25 1992-04-07 Hughes Aircraft Company Shunt regulator with tunnel oxide reference
JPH05167427A (ja) * 1991-12-13 1993-07-02 Toshiba Corp レベルシフト回路
FR2686469B1 (fr) * 1992-01-20 1994-04-08 Matra Mhs Etage de sortie ttl-cmos pour circuit integre.
US5341042A (en) * 1992-08-10 1994-08-23 International Business Machines Corporation Low voltage, cascoded NTL based BiCMOS circuit
SG48335A1 (en) * 1993-04-19 1998-04-17 Koninkl Philips Electronics Nv Bicmos output driver circuit
JPH07288463A (ja) * 1994-04-18 1995-10-31 Nec Corp ＢｉＣＭＯＳ半導体集積回路
US5929666A (en) * 1994-06-03 1999-07-27 Lucent Technologies Inc. Bootstrap circuit
JP3208296B2 (ja) * 1995-09-12 2001-09-10 シャープ株式会社 多値電圧出力回路および液晶駆動回路
JP5614593B2 (ja) * 2008-03-27 2014-10-29 アギア システムズ エルエルシーＡｇｅｒｅ Ｓｙｓｔｅｍｓ ＬＬＣ 高電圧耐性の入出力インターフェイス回路
CN108370250B (zh) * 2015-10-02 2022-10-11 索尼公司 半导体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3631528A (en) * 1970-08-14 1971-12-28 Robert S Green Low-power consumption complementary driver and complementary bipolar buffer circuits
EP0058958B1 (de) * 1981-02-25 1986-10-29 Kabushiki Kaisha Toshiba Komplementäre MOSFET-Logikschaltung
JPS60125015A (ja) * 1983-12-12 1985-07-04 Hitachi Ltd インバ−タ回路
JPH07107973B2 (ja) * 1984-03-26 1995-11-15 株式会社日立製作所 スイツチング回路
JPS61274512A (ja) * 1985-05-30 1986-12-04 Oki Electric Ind Co Ltd 出力バツフア回路
DE3688222T2 (de) * 1985-07-22 1993-11-04 Hitachi Ltd Halbleitereinrichtung mit bipolarem transistor und isolierschicht-feldeffekttransistor.
JPS62254460A (ja) * 1986-04-26 1987-11-06 Toshiba Corp Ｂｉ−ＣＭＯＳ論理回路

Also Published As

Publication number Publication date
EP0307323A2 (de) 1989-03-15
JPS6471325A (en) 1989-03-16
KR890005995A (ko) 1989-05-18
EP0307323B1 (de) 1994-07-27
KR910006513B1 (ko) 1991-08-27
US4882534A (en) 1989-11-21
EP0307323A3 (en) 1989-10-18

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Legal Events

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