DE3856480D1 - MOS-Feldeffekt-Transistor mit Leitfähigkeitsmodulation - Google Patents

MOS-Feldeffekt-Transistor mit Leitfähigkeitsmodulation

Info

Publication number
DE3856480D1
DE3856480D1 DE3856480T DE3856480T DE3856480D1 DE 3856480 D1 DE3856480 D1 DE 3856480D1 DE 3856480 T DE3856480 T DE 3856480T DE 3856480 T DE3856480 T DE 3856480T DE 3856480 D1 DE3856480 D1 DE 3856480D1
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
mos field
conductivity modulation
modulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3856480T
Other languages
English (en)
Other versions
DE3856480T2 (de
Inventor
Akio Nakagawa
Yoshihiro Yamaguchi
Kiminori Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3856480D1 publication Critical patent/DE3856480D1/de
Application granted granted Critical
Publication of DE3856480T2 publication Critical patent/DE3856480T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE3856480T 1987-02-26 1988-02-24 MOS-Feldeffekt-Transistor mit Leitfähigkeitsmodulation Expired - Lifetime DE3856480T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4130987 1987-02-26
JP11074387 1987-05-08
JP62304634A JPH0821713B2 (ja) 1987-02-26 1987-12-03 導電変調型ｍｏｓｆｅｔ

Publications (2)

Publication Number Publication Date
DE3856480D1 true DE3856480D1 (de) 2001-08-23
DE3856480T2 DE3856480T2 (de) 2002-04-18

Family

ID=27290772

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3856480T Expired - Lifetime DE3856480T2 (de) 1987-02-26 1988-02-24 MOS-Feldeffekt-Transistor mit Leitfähigkeitsmodulation

Country Status (4)

Country Link
US (1) US4980743A (de)
EP (1) EP0280535B1 (de)
JP (1) JPH0821713B2 (de)
DE (1) DE3856480T2 (de)

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DE68929359T2 (de) * 1988-09-22 2002-08-22 Koninkl Philips Electronics Nv Laterale bipolare Transistoranordnungen mit isolierter Steuerelektrode mit geteilter Anode
GB8901342D0 (en) * 1989-01-21 1989-03-15 Lucas Ind Plc Semiconductor device
US5017992A (en) * 1989-03-29 1991-05-21 Asea Brown Boveri Ltd. High blocking-capacity semiconductor component
EP0394859A1 (de) * 1989-04-28 1990-10-31 Asea Brown Boveri Ag Bidirektionals, abschaltbares Halbeiterbauelement
JP2876625B2 (ja) * 1989-06-07 1999-03-31 日本電気株式会社 導電変調型電界効果トランジスタ
JPH03104169A (ja) * 1989-09-18 1991-05-01 Mitsubishi Electric Corp 半導体装置
US5194394A (en) * 1989-10-23 1993-03-16 Mitsubishi Denki Kabushiki Kaisha Thyristor and method of manufacturing the same
JPH0795596B2 (ja) * 1989-10-23 1995-10-11 三菱電機株式会社 サイリスタ及びその製造方法
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JPH0795597B2 (ja) * 1990-08-18 1995-10-11 三菱電機株式会社 サイリスタおよびその製造方法
EP1202352B1 (de) * 1991-01-31 2008-08-06 Kabushiki Kaisha Toshiba Halbleiterbauelement mit hoher Durchbruchspannung
US5155563A (en) * 1991-03-18 1992-10-13 Motorola, Inc. Semiconductor device having low source inductance
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JP3203814B2 (ja) * 1992-10-19 2001-08-27 富士電機株式会社 半導体装置
DE4244272A1 (de) * 1992-12-28 1994-06-30 Daimler Benz Ag Feldeffektgesteuertes Halbleiterbauelement
JP3182262B2 (ja) * 1993-07-12 2001-07-03 株式会社東芝 半導体装置
EP0690509A1 (de) * 1994-06-30 1996-01-03 Texas Instruments Incorporated Substratanschluss für eine Gate-Array-Basiszelle und Verfahren zu ihrer Herstellung
US5548133A (en) * 1994-09-19 1996-08-20 International Rectifier Corporation IGBT with increased ruggedness
US5731603A (en) * 1995-08-24 1998-03-24 Kabushiki Kaisha Toshiba Lateral IGBT
JP4357127B2 (ja) 2000-03-03 2009-11-04 株式会社東芝 半導体装置
JP4712301B2 (ja) * 2001-05-25 2011-06-29 三菱電機株式会社 電力用半導体装置
JP4566470B2 (ja) * 2001-07-17 2010-10-20 三菱電機株式会社 絶縁ゲート型バイポーラトランジスタ
JP4802306B2 (ja) * 2003-12-01 2011-10-26 オンセミコンダクター・トレーディング・リミテッド 半導体装置
JP5087818B2 (ja) * 2005-03-25 2012-12-05 日亜化学工業株式会社 電界効果トランジスタ
JP5245157B2 (ja) * 2008-06-03 2013-07-24 独立行政法人産業技術総合研究所 半導体双方向スイッチング装置
JP6491201B2 (ja) 2013-06-24 2019-03-27 アイディール パワー インコーポレイテッド 双方向バイポーラトランジスタを有するシステム、回路、素子、及び方法
US9799731B2 (en) 2013-06-24 2017-10-24 Ideal Power, Inc. Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors
US9742385B2 (en) 2013-06-24 2017-08-22 Ideal Power, Inc. Bidirectional semiconductor switch with passive turnoff
US11637016B2 (en) 2013-12-11 2023-04-25 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US9355853B2 (en) 2013-12-11 2016-05-31 Ideal Power Inc. Systems and methods for bidirectional device fabrication
WO2016073957A1 (en) 2014-11-06 2016-05-12 Ideal Power Inc. Circuits, methods, and systems with optimized operation of double-base bipolar junction transistors
JP2016171231A (ja) * 2015-03-13 2016-09-23 株式会社東芝 半導体装置および半導体パッケージ
JP7027287B2 (ja) * 2018-09-19 2022-03-01 株式会社東芝 半導体装置
JP7210342B2 (ja) 2019-03-18 2023-01-23 株式会社東芝 半導体装置
JP7246983B2 (ja) * 2019-03-20 2023-03-28 株式会社東芝 半導体装置
US11322609B2 (en) * 2019-11-29 2022-05-03 Taiwan Semiconductor Manufacturing Company Ltd. High voltage device
JP7297709B2 (ja) 2020-03-19 2023-06-26 株式会社東芝 半導体装置及び半導体回路
JP7387562B2 (ja) 2020-09-10 2023-11-28 株式会社東芝 半導体素子および半導体装置
JP7330155B2 (ja) 2020-09-16 2023-08-21 株式会社東芝 半導体装置及び半導体回路
JP7330154B2 (ja) 2020-09-16 2023-08-21 株式会社東芝 半導体装置及び半導体回路
JP7444027B2 (ja) 2020-11-06 2024-03-06 三菱電機株式会社 半導体装置
JP7407757B2 (ja) 2021-03-17 2024-01-04 株式会社東芝 半導体装置
JPWO2022210052A1 (de) * 2021-03-31 2022-10-06

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Also Published As

Publication number Publication date
EP0280535A3 (de) 1990-10-10
EP0280535A2 (de) 1988-08-31
US4980743A (en) 1990-12-25
JPH0821713B2 (ja) 1996-03-04
JPS6457674A (en) 1989-03-03
DE3856480T2 (de) 2002-04-18
EP0280535B1 (de) 2001-07-18

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