JP6641958B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP6641958B2 JP6641958B2 JP2015242058A JP2015242058A JP6641958B2 JP 6641958 B2 JP6641958 B2 JP 6641958B2 JP 2015242058 A JP2015242058 A JP 2015242058A JP 2015242058 A JP2015242058 A JP 2015242058A JP 6641958 B2 JP6641958 B2 JP 6641958B2
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- 239000004065 semiconductor Substances 0.000 title claims description 102
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 238000009792 diffusion process Methods 0.000 claims description 242
- 239000012535 impurity Substances 0.000 claims description 223
- 239000000758 substrate Substances 0.000 claims description 39
- 239000003990 capacitor Substances 0.000 claims description 35
- 239000010410 layer Substances 0.000 description 127
- 230000005669 field effect Effects 0.000 description 18
- 230000015556 catabolic process Effects 0.000 description 15
- 238000000034 method Methods 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 210000000746 body region Anatomy 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- -1 phosphorus ions Chemical class 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
<半導体装置>
本発明の一実施形態に係る半導体装置は、複数の異なる種類の回路素子を混載しているが、以下においては、それらの回路素子の例について、図1〜図4を参照しながら説明する。なお、図1〜図4に示した複数の異なる種類の回路素子は、同一の下地基板10上に配置される。
次に、本発明の一実施形態に係る半導体装置の製造方法について説明する。本発明の一実施形態に係る半導体装置の製造方法は、複数の異なる種類の回路素子を混載した半導体装置を製造することが可能であるが、以下においては、それらの回路素子の製造工程について、図5A〜図8Bを参照しながら説明する。なお、図5A〜図8Bに示した複数の異なる種類の回路素子の製造工程は、同一の下地基板10上で行われる。
Claims (4)
- 半導体層と、
前記半導体層の第1の領域に配置された第1導電型のウエルと、
前記ウエルに配置された第1導電型の第1の不純物拡散領域と、
前記半導体層の第2の領域に配置された第1導電型の第2の不純物拡散領域と、
前記第2の不純物拡散領域上に配置された絶縁膜と、
前記絶縁膜上に配置された電極と、
少なくとも前記第1の不純物拡散領域上に配置された第2導電型の第3の不純物拡散領域と、
前記半導体層に配置され、前記ウエルを平面視で囲む第1導電型の第4の不純物拡散領域と、
を備え、
前記第1導電型のウエル、前記第1の不純物拡散領域及び前記第4の不純物拡散領域をカソード又はアノード領域とし、前記第3の不純物拡散領域をアノード又はカソード領域として、バーチカル型のツェナーダイオードが構成され、
前記第2の不純物拡散領域を第1の電極とし、前記電極を第2の電極として、キャパシターが構成される半導体装置。 - 前記半導体層において前記第2の不純物拡散領域を囲むように配置された少なくとも1つのウエルをさらに備える、請求項1記載の半導体装置。
- 前記半導体層が配置された第2導電型の半導体基板と、
前記半導体基板に配置された第1導電型の埋め込み拡散層と、
前記半導体層に配置され、前記埋め込み拡散層上に位置する前記第4の不純物拡散領域と、
をさらに備える、請求項1又は2記載の半導体装置。 - 半導体層の第1の領域を平面視で囲む第1導電型の第4の不純物拡散領域を形成する工程と、
前記第1の領域に第1導電型のウエルを形成する工程と、
前記ウエルに第1導電型の第1の不純物拡散領域を形成し、同時に、前記半導体層の第2の領域に第1導電型の第2の不純物拡散領域を形成する工程と、
前記第2の不純物拡散領域に絶縁膜を形成する工程と、
前記絶縁膜上に電極を形成する工程と、
少なくとも前記第1の不純物拡散領域上に第2導電型の第3の不純物拡散領域を形成する工程と、
を備え、
前記第1導電型のウエル、前記第1の不純物拡散領域及び前記第4の不純物拡散領域をカソード又はアノード領域とし、前記第3の不純物拡散領域をアノード又はカソード領域として、バーチカル型のツェナーダイオードが構成され、
前記第2の不純物拡散領域を第1の電極とし、前記電極を第2の電極として、キャパシターが構成される半導体装置の製造方法。
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CN201611115520.2A CN106952967B (zh) | 2015-12-11 | 2016-12-07 | 半导体装置及其制造方法 |
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