DE69517140D1 - Halbleiterbauelement mit Bipolartransistor mit isolierter Gateelektrode und dessen Herstellungsverfahren - Google Patents

Halbleiterbauelement mit Bipolartransistor mit isolierter Gateelektrode und dessen Herstellungsverfahren

Info

Publication number
DE69517140D1
DE69517140D1 DE69517140T DE69517140T DE69517140D1 DE 69517140 D1 DE69517140 D1 DE 69517140D1 DE 69517140 T DE69517140 T DE 69517140T DE 69517140 T DE69517140 T DE 69517140T DE 69517140 D1 DE69517140 D1 DE 69517140D1
Authority
DE
Germany
Prior art keywords
gate electrode
production process
bipolar transistor
insulated gate
semiconductor component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69517140T
Other languages
English (en)
Other versions
DE69517140T2 (de
Inventor
Kiyoto Watabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69517140D1 publication Critical patent/DE69517140D1/de
Publication of DE69517140T2 publication Critical patent/DE69517140T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7394—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69517140T 1994-12-21 1995-12-06 Halbleiterbauelement mit Bipolartransistor mit isolierter Gateelektrode und dessen Herstellungsverfahren Expired - Fee Related DE69517140T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31878594 1994-12-21
JP7121842A JPH08227999A (ja) 1994-12-21 1995-05-19 絶縁ゲート型バイポーラトランジスタ及びその製造方法並びに半導体集積回路及びその製造方法

Publications (2)

Publication Number Publication Date
DE69517140D1 true DE69517140D1 (de) 2000-06-29
DE69517140T2 DE69517140T2 (de) 2001-02-01

Family

ID=26459110

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69517140T Expired - Fee Related DE69517140T2 (de) 1994-12-21 1995-12-06 Halbleiterbauelement mit Bipolartransistor mit isolierter Gateelektrode und dessen Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5654561A (de)
EP (1) EP0718892B1 (de)
JP (1) JPH08227999A (de)
DE (1) DE69517140T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0817274B1 (de) * 1996-07-05 2004-02-11 STMicroelectronics S.r.l. Asymmetrische MOS-Technologie-Leistungsanordnung
US6271061B1 (en) 1997-12-03 2001-08-07 Stmicroelectronics S.R.L. Fabrication of insulated gate bipolar devices
EP1142026B1 (de) * 1998-12-04 2007-11-14 Infineon Technologies AG Leistungshalbleiterschalter
US6023090A (en) * 1998-12-07 2000-02-08 Philips Electronics North America, Corporation Lateral thin-film Silicon-On-Insulator (SOI) device having multiple zones in the drift region
SE9901575L (sv) * 1999-05-03 2000-11-04 Eklund Klas Haakan Halvledarelement
JP2001085463A (ja) * 1999-09-09 2001-03-30 Rohm Co Ltd 半導体チップおよびそれを用いた半導体装置
US6191453B1 (en) * 1999-12-13 2001-02-20 Philips Electronics North America Corporation Lateral insulated-gate bipolar transistor (LIGBT) device in silicon-on-insulator (SOI) technology
JP3647802B2 (ja) 2001-01-25 2005-05-18 株式会社東芝 横型半導体装置
JP3783156B2 (ja) * 2001-10-17 2006-06-07 株式会社日立製作所 半導体装置
JP5135666B2 (ja) * 2005-04-14 2013-02-06 株式会社日立製作所 電力変換装置
CN1988156B (zh) * 2005-12-21 2010-05-19 三菱电机株式会社 半导体装置
JP2007194575A (ja) * 2005-12-21 2007-08-02 Mitsubishi Electric Corp 半導体装置
JP2007207862A (ja) * 2006-01-31 2007-08-16 Mitsubishi Electric Corp 半導体装置
JP2006287250A (ja) * 2006-05-29 2006-10-19 Rohm Co Ltd 二重拡散型ｍｏｓｆｅｔおよびこれを用いた半導体装置
JP5036234B2 (ja) * 2006-07-07 2012-09-26 三菱電機株式会社 半導体装置
US7531888B2 (en) * 2006-11-30 2009-05-12 Fairchild Semiconductor Corporation Integrated latch-up free insulated gate bipolar transistor
JP2008147318A (ja) * 2006-12-08 2008-06-26 Matsushita Electric Ind Co Ltd 高耐圧半導体装置及びその製造方法
KR100847306B1 (ko) * 2007-02-14 2008-07-21 삼성전자주식회사 반도체 장치 및 이의 제조 방법
JP2010092978A (ja) * 2008-10-06 2010-04-22 Nec Electronics Corp 絶縁ゲートバイポーラトランジスタ
JP5407398B2 (ja) * 2009-02-12 2014-02-05 富士電機株式会社 半導体装置
JP5124533B2 (ja) * 2009-06-30 2013-01-23 株式会社日立製作所 半導体装置、それを用いたプラズマディスプレイ駆動用半導体集積回路装置、及びプラズマディスプレイ装置
KR101534106B1 (ko) * 2011-07-05 2015-07-06 미쓰비시덴키 가부시키가이샤 반도체장치
JP6001309B2 (ja) * 2012-04-17 2016-10-05 エスアイアイ・セミコンダクタ株式会社 半導体装置
CN104882476B (zh) * 2015-05-25 2018-09-25 上海先进半导体制造股份有限公司 横向igbt及其制作方法
CN108321195B (zh) * 2018-02-05 2020-05-22 电子科技大学 一种具有阳极夹断槽的短路阳极soi ligbt
CN110034176B (zh) * 2019-04-22 2022-02-11 东南大学 解决反向恢复失效的逆导型横向绝缘栅双极型晶体管

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4618872A (en) * 1983-12-05 1986-10-21 General Electric Company Integrated power switching semiconductor devices including IGT and MOSFET structures
US4672407A (en) * 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
US4963951A (en) * 1985-11-29 1990-10-16 General Electric Company Lateral insulated gate bipolar transistors with improved latch-up immunity
US5512774A (en) * 1988-02-08 1996-04-30 Kabushiki Kaisha Toshiba Dielectrically isolated substrate and semiconductor device using the same
JPH04320377A (ja) * 1991-04-19 1992-11-11 Fuji Electric Co Ltd 絶縁ゲート型バイポーラトランジスタ
JP2918399B2 (ja) * 1992-08-05 1999-07-12 三菱電機株式会社 半導体装置およびその製造方法
JPH06112494A (ja) * 1992-09-29 1994-04-22 Fuji Electric Co Ltd 絶縁ゲート型バイポーラトランジスタ
JP3203814B2 (ja) * 1992-10-19 2001-08-27 富士電機株式会社 半導体装置

Also Published As

Publication number Publication date
JPH08227999A (ja) 1996-09-03
US5654561A (en) 1997-08-05
EP0718892A2 (de) 1996-06-26
EP0718892B1 (de) 2000-05-24
EP0718892A3 (de) 1996-12-04
DE69517140T2 (de) 2001-02-01

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee