DE69034157D1 - Bipolartransistor mit isolierter Gate-Elektrode und Verfahren zur Herstellung - Google Patents

Bipolartransistor mit isolierter Gate-Elektrode und Verfahren zur Herstellung

Info

Publication number
DE69034157D1
DE69034157D1 DE69034157T DE69034157T DE69034157D1 DE 69034157 D1 DE69034157 D1 DE 69034157D1 DE 69034157 T DE69034157 T DE 69034157T DE 69034157 T DE69034157 T DE 69034157T DE 69034157 D1 DE69034157 D1 DE 69034157D1
Authority
DE
Germany
Prior art keywords
manufacturing
bipolar transistor
insulated gate
gate bipolar
insulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69034157T
Other languages
English (en)
Other versions
DE69034157T2 (de
Inventor
Hiroyasu Hagino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69034157D1 publication Critical patent/DE69034157D1/de
Publication of DE69034157T2 publication Critical patent/DE69034157T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69034157T 1989-05-26 1990-05-23 Bipolartransistor mit isolierter Gate-Elektrode und Verfahren zur Herstellung Expired - Lifetime DE69034157T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1133202A JPH02312280A (ja) 1989-05-26 1989-05-26 絶縁ゲート型バイポーラトランジスタ
JP13320289 1989-05-26

Publications (2)

Publication Number Publication Date
DE69034157D1 true DE69034157D1 (de) 2004-09-30
DE69034157T2 DE69034157T2 (de) 2005-09-08

Family

ID=15099119

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69025990T Expired - Fee Related DE69025990T2 (de) 1989-05-26 1990-05-23 Bipolarer Transistor mit isolierter Steuerelektrode und Verfahren zu dessen Herstellung
DE69034157T Expired - Lifetime DE69034157T2 (de) 1989-05-26 1990-05-23 Bipolartransistor mit isolierter Gate-Elektrode und Verfahren zur Herstellung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69025990T Expired - Fee Related DE69025990T2 (de) 1989-05-26 1990-05-23 Bipolarer Transistor mit isolierter Steuerelektrode und Verfahren zu dessen Herstellung

Country Status (4)

Country Link
US (3) US5023691A (de)
EP (2) EP0690512B1 (de)
JP (1) JPH02312280A (de)
DE (2) DE69025990T2 (de)

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JP5283326B2 (ja) * 2006-10-27 2013-09-04 三菱電機株式会社 半導体装置およびその製造方法
JP2012089565A (ja) * 2010-10-15 2012-05-10 Honda Motor Co Ltd 半導体装置
JP5568036B2 (ja) * 2011-03-09 2014-08-06 トヨタ自動車株式会社 Ｉｇｂｔ
JP5609939B2 (ja) * 2011-09-27 2014-10-22 株式会社デンソー 半導体装置
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Also Published As

Publication number Publication date
DE69025990D1 (de) 1996-04-25
EP0405138A2 (de) 1991-01-02
EP0690512B1 (de) 2004-08-25
US5391898A (en) 1995-02-21
DE69034157T2 (de) 2005-09-08
US5170239A (en) 1992-12-08
EP0405138A3 (en) 1991-11-27
EP0690512A1 (de) 1996-01-03
JPH02312280A (ja) 1990-12-27
US5023691A (en) 1991-06-11
DE69025990T2 (de) 1996-11-28
EP0405138B1 (de) 1996-03-20

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