DE69427913D1 - Bipolarer Hochfrequenztransistor und Verfahren zur Herstellung - Google Patents

Bipolarer Hochfrequenztransistor und Verfahren zur Herstellung

Info

Publication number
DE69427913D1
DE69427913D1 DE69427913T DE69427913T DE69427913D1 DE 69427913 D1 DE69427913 D1 DE 69427913D1 DE 69427913 T DE69427913 T DE 69427913T DE 69427913 T DE69427913 T DE 69427913T DE 69427913 D1 DE69427913 D1 DE 69427913D1
Authority
DE
Germany
Prior art keywords
manufacturing
high frequency
bipolar transistor
frequency bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69427913T
Other languages
English (en)
Other versions
DE69427913T2 (de
Inventor
Raffaele Zambrano
Giuseppe Fallico
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Application granted granted Critical
Publication of DE69427913D1 publication Critical patent/DE69427913D1/de
Publication of DE69427913T2 publication Critical patent/DE69427913T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
DE69427913T 1994-10-28 1994-10-28 Bipolarer Hochfrequenztransistor und Verfahren zur Herstellung Expired - Fee Related DE69427913T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94830512A EP0709894B1 (de) 1994-10-28 1994-10-28 Bipolarer Hochfrequenztransistor und Verfahren zur Herstellung

Publications (2)

Publication Number Publication Date
DE69427913D1 true DE69427913D1 (de) 2001-09-13
DE69427913T2 DE69427913T2 (de) 2002-04-04

Family

ID=8218562

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69427913T Expired - Fee Related DE69427913T2 (de) 1994-10-28 1994-10-28 Bipolarer Hochfrequenztransistor und Verfahren zur Herstellung

Country Status (4)

Country Link
US (2) US5986323A (de)
EP (1) EP0709894B1 (de)
JP (1) JP2816122B2 (de)
DE (1) DE69427913T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614422A (en) * 1995-03-17 1997-03-25 Harris Corporation Process for doping two levels of a double poly bipolar transistor after formation of second poly layer
KR100215841B1 (ko) * 1997-04-10 1999-08-16 구본준 바이폴라소자 제조방법
US6130136A (en) * 1997-11-20 2000-10-10 Texas Instruments Incorporated Bipolar transistor with L-shaped base-emitter spacer
IT1301729B1 (it) * 1998-06-16 2000-07-07 St Microelectronics Srl Processo per il drogaggio selettivo di una fetta di materialesemiconduttore mediante impiantazione ionica.
US5869380A (en) * 1998-07-06 1999-02-09 Industrial Technology Research Institute Method for forming a bipolar junction transistor
DE19842106A1 (de) 1998-09-08 2000-03-09 Inst Halbleiterphysik Gmbh Vertikaler Bipolartransistor und Verfahren zu seiner Herstellung
JP2000252294A (ja) * 1999-03-01 2000-09-14 Nec Corp 半導体装置及びその製造方法
US6492237B2 (en) * 2001-02-12 2002-12-10 Maxim Integrated Products, Inc. Method of forming an NPN device
KR100456005B1 (ko) * 2001-12-24 2004-11-08 주식회사 케이이씨 접합형 바이폴라 트랜지스터의 구조 및 그의 전극 제조방법
US6767798B2 (en) * 2002-04-09 2004-07-27 Maxim Integrated Products, Inc. Method of forming self-aligned NPN transistor with raised extrinsic base
US6965133B2 (en) * 2004-03-13 2005-11-15 International Business Machines Corporation Method of base formation in a BiCMOS process
US6911681B1 (en) 2004-04-14 2005-06-28 International Business Machines Corporation Method of base formation in a BiCMOS process
DE102004053394B4 (de) * 2004-11-05 2010-08-19 Atmel Automotive Gmbh Halbleiteranordnung und Verfahren zur Herstellung einer Halbleiteranordnung
US8389372B2 (en) 2010-11-22 2013-03-05 International Business Machines Corporation Heterojunction bipolar transistors with reduced base resistance
CN108172615A (zh) * 2017-12-25 2018-06-15 深圳市晶特智造科技有限公司 高频三极管及其制作方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4495512A (en) * 1982-06-07 1985-01-22 International Business Machines Corporation Self-aligned bipolar transistor with inverted polycide base contact
US4567058A (en) * 1984-07-27 1986-01-28 Fairchild Camera & Instrument Corporation Method for controlling lateral diffusion of silicon in a self-aligned TiSi2 process
DE3580206D1 (de) * 1984-07-31 1990-11-29 Toshiba Kawasaki Kk Bipolarer transistor und verfahren zu seiner herstellung.
US5198372A (en) * 1986-01-30 1993-03-30 Texas Instruments Incorporated Method for making a shallow junction bipolar transistor and transistor formed thereby
GB8610314D0 (en) * 1986-04-28 1986-06-04 British Telecomm Bipolar transistor
DE68928787T2 (de) * 1988-04-11 1998-12-24 Synergy Semiconductor Corp Verfahren zur Herstellung eines Bipolartransistors
US5283201A (en) * 1988-05-17 1994-02-01 Advanced Power Technology, Inc. High density power device fabrication process
US5006476A (en) * 1988-09-07 1991-04-09 North American Philips Corp., Signetics Division Transistor manufacturing process using three-step base doping
US5177582A (en) * 1989-09-22 1993-01-05 Siemens Aktiengesellschaft CMOS-compatible bipolar transistor with reduced collector/substrate capacitance and process for producing the same
JP3127455B2 (ja) * 1990-08-31 2001-01-22 ソニー株式会社 半導体装置の製法
JPH04373133A (ja) * 1991-06-24 1992-12-25 Hitachi Ltd 半導体装置
US5320972A (en) * 1993-01-07 1994-06-14 Northern Telecom Limited Method of forming a bipolar transistor
US5643806A (en) * 1993-02-28 1997-07-01 Sony Corporation Manufacturing method for making bipolar device
JPH07335773A (ja) * 1994-06-10 1995-12-22 Hitachi Ltd 半導体集積回路装置の製造方法
US5583368A (en) * 1994-08-11 1996-12-10 International Business Machines Corporation Stacked devices
US5593905A (en) * 1995-02-23 1997-01-14 Texas Instruments Incorporated Method of forming stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link

Also Published As

Publication number Publication date
JP2816122B2 (ja) 1998-10-27
EP0709894B1 (de) 2001-08-08
DE69427913T2 (de) 2002-04-04
JPH08274109A (ja) 1996-10-18
US5986323A (en) 1999-11-16
EP0709894A1 (de) 1996-05-01
US5804486A (en) 1998-09-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee